Zowie Technology Corporation

High Voltage Transistor

PNP Silicon
COLLECTOR
3 3

BASE

MMBT5401 1
2
1

2
SOT-23 EMITTER

MAXIMUM RATINGS
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO -150 Vdc
Collector-Base Voltage VCBO -160 Vdc
Emitter-Base Voltage VEBO -5.0 Vdc
Collector Current-Continuous IC -500 mAdc

THERMAL CHARACTERISTICS
Characteristic Symbol Max. Unit
(1) o
Total Device Dissipation FR-5 Board TA=25 C 225 mW
o PD
Derate above 25 C 1.8 mW / oC
o
Thermal Resistance Junction to Ambient R JA 556 C/W
(2) o
Total Device Dissipation Alumina Substrate, TA=25 C 300 mW
o PD
Derate above 25 C 2.4 mW / oC
o
Thermal Resistance Junction to Ambient R JA 417 C/W
o
Junction and Storage Temperature TJ,TSTG -55 to +150 C

DEVICE MARKING
MMBT5401=2L

o
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)
Characteristic Symbol Min. Max. Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdowe Voltage

V(BR)CEO -150 - Vdc
( IC = 1.0mAdc, IB = 0 )

Collector-Base Breakdowe Voltage

V(BR)CBO -160 - Vdc
( IC = -100 uAdc, IE = 0 )

Emitter-Base Breakdowe Voltage

V(BR)EBO -5.0 - Vdc
( IE = -10 uAdc, IC = 0 )

Collector Cutoff Current

( VCE= -120 Vdc, IE = 0 ) ICES - -50 nAdc
o
( VCE= -120 Vdc, IE = 0, TA = 100 C ) - -50 uAdc

(1) FR-5=1.0 x 0.75 x 0.062in.

(2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.

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o
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Continued)
Characteristic Symbol Min. Max. Unit

ON CHARACTERISTICS

DC Current Gain
( IC= -1.0 mAdc, VCE= -5.0 Vdc ) 50 -
HFE -
( IC= -10 mAdc, VCE= -5.0 Vdc ) 60 240
( IC= -50 mAdc, VCE= -5.0 Vdc ) 50 -

Collector-Emitter Saturation Voltage

( IC= -10 mAdc, IB= -1.0 mAdc ) VCE(sat) - -0.2 Vdc
( IC= -50 mAdc, IB= -5.0 mAdc ) - -0.5

Base-Emitter Saturation Voltage

( IC= -10 mAdc, IB= -1.0 mAdc ) VBE(sat) - -1.0 Vdc
( IC= -50 mAdc, IB= -5.0 mAdc ) - -1.0

SMALL-SIGNAL CHARACTERISTIC

Current-Gain-Bandwidth Product
fT 100 300 MHZ
( IC= -10 mAdc, VCE= -10 Vdc, f=100 MHZ )

Output Capacitance
Ccb - 6.0 pF
( VCB= -10 Vdc, IE=0, f=1.0 MHZ )

Small-Signal Current Gain hfe 40 200 -

( VCE= -10 Vdc, IC= -1.0 mAdc, f=1.0 MHZ )

Noise Figure
NF - 8.0 dB
( VCE= -5.0 Vdc, IC= -200 uAdc, RS= 10 ohms, f=1.0 kHZ )

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200
hFE, NORMALIZED CURRENT GAIN

150
o
TJ = 125 C

100
o
TJ = 25 C
70

50

o
TJ = 55 C
30
VCE = -1.0 V
VCE = -5.0 V
20
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain

1.0
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

0.9 o
TJ= 25 C
0.8
IC = 1.0mA IC = 10mA IC = 30mA IC = 100mA
0.7

0.6

0.5

0.4

0.3

0.2

0.1

0
0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50

IB, BASE CURRENT ( mA )

Figure 2. Collector Saturation Region

3
10

VCE = 30 V IC = ICES
2
10
IC, COLLECTOR CURRENT (uA)

1
10
o
TJ = 125 C
0
10
o
TJ = 75 C
-1
10

-2 REVERSE FORWARD
10 o
TJ = 25 C

-3
10
0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7

VBE, BASE - EMITTER VOLTAGE (VOLTS)

Figure 18. Temperature Coefficients

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1.0

TEMPERATURE COEFFICIENTS (mV / C)

o 2.5 o o
TJ= 25 C TJ= -55 C to 135 C

o
0.9 2.0
0.8 1.5
V, VOLTAGE ( VOLTS )

0.7 1.0
VBE(SAT) @ IC/IB = 10
0.6 0.5
VC for VCE(sat)
0.5 0
0.4 -0.5
0.3 -1.0
0.2 -1.5
VCE(SAT) @ IC/IB = 10 VB for VBE(sat)
0.1 -2.0

V,
0 -2.5
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
IC, COLLECTOR CURRENT ( mA ) IC, COLLECTOR CURRENT ( mA )
Figure 4. " On " Voltages Figure 5. Temperature Coefficients

100
o
TJ= 25 C
70
VBB VCC
+ 8.8V -30 V 50
C, CAPACITANCE ( pF )

10.2V 30
100 3.0 k RC 20 Cibo
Vin

Vout 10
10 uS 0.25 uF RB
7.0
INPUT PULSE
5.0
5.1 k Cobo
tr, tf 10 nS Vin 100 1N914 3.0
DUTY CYCLE = 1.0% 2.0

1.0
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20

VALUES SHOWN ARE FOR IC @ 10 mA VR, REVERSE VOLTAGE ( VOLTS )

Figure 6. Switching Time Test Circuit Figure 7. Capacitances

1000
2000 IC/IB = 10
700 o tf @ VCC = 120 V
TJ= 25 C
500 1000
IC/IB = 10 700
300 TJ= 25 C
o
tr @ VCC = 120 V 500
200 tf @ VCC = 30 V
t, TIME ( nS )

tr @ VCC = 30 V 300
t, TIME ( nS )

100 200 tf @ VCC = 120 V

70
50 100
30 70
td @ VBE(off) = 1.0 V 50
20 VCC = 120 V
30
10 20
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200
IC, COLLECTOR CURRENT ( mA ) IC, COLLECTOR CURRENT ( mA )
Figure 8. Turn - On Time Figure 9. Turn - Off Time

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