AOL1428

N-Channel Enhancement Mode Field Effect Transistor

General Description Features

The AOL1428 uses advanced trench technology to
provide excellent RDS(ON), low gate charge.This device VDS (V) = 30V
is suitable for use as a high side switch in SMPS and ID = 45A (VGS = 10V)
general purpose applications. RDS(ON) <9.5mΩ (VGS = 10V)
RDS(ON) <16mΩ (VGS = 4.5V)
-RoHS Compliant
-Halogen and Antimony Free Green Device*
UIS Tested
Rg,Ciss,Coss,Crss Tested

TM
Ultra SO-8 Top View D

D
Bottom tab G
connected to
S drain S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter Symbol Maximum Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TC=25°C 49
Current B TC=100°C ID 34 A
Pulsed Drain Current IDM 120
Continuous Drain TA=25°C 11
H A
Current TA=70°C IDSM 9
C
Avalanche Current IAR 30 A
C
Repetitive avalanche energy L=0.3mH EAR 135 mJ
TC=25°C 43
B
PD W
Power Dissipation TC=100°C 21
TA=25°C 2.2
A
PDSM W
Power Dissipation TA=70°C 1.5
Junction and Storage Temperature Range TJ, TSTG -55 to 175 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
A
Maximum Junction-to-Ambient t ≤ 10s 19 25 °C/W
A RθJA
Maximum Junction-to-Ambient Steady-State 45 55 °C/W
Maximum Junction-to-Case C Steady-State RθJC 2.5 3.5 °C/W

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AOL1428

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V
VDS=24V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current uA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 0.1 µA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 1.9 2.5 V
ID(ON) On state drain current VGS=10V, VDS=5V 120 A
VGS=10V, ID=20A 7.7 9.5
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 11.0
VGS=4.5V, ID=20A 13 16.0 mΩ
gFS Forward Transconductance VDS=5V, ID=20A 40 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.74 1.0 V
IS Maximum Body-Diode Continuous Current 46 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 1000 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 340 pF
Crss Reverse Transfer Capacitance 100 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 1.3 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 18 nC
Qg(4.5V) Total Gate Charge 8.5 nC
VGS=10V, VDS=15V, ID=20A
Qgs Gate Source Charge 3.1 nC
Qgd Gate Drain Charge 4.8 nC
tD(on) Turn-On DelayTime 5.6 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=0.75Ω, 5.5 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 18.5 ns
tf Turn-Off Fall Time 5 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs 29 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs 24 nC
A: The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of T J(MAX)=175°C.
G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
H. Surface mounted on a 1 in 2 FR-4 board with 2oz. Copper.
* This device is guaranteed green after date code 8P11 (June 1 ST 2008)
Rev3: Jul 2008

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AOL1428

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

120 30
10V
VDS=5V
7V 25
90
4.5V 20
ID (A)

ID(A)
60 15 125°
4V
10
30
25°C
5
VGS=3.5V

0 0
0 1 2 3 4 5 1 1.5 2 2.5 3 3.5 4
VDS (Volts) VGS(Volts)
Figure 1: On-Region Characteristics Figure 2: Transfer Characteristics

15 1.6

VGS=4.5V
VGS=10V
Normalized On-Resistance

13 1.4
ID=20A
RDS(ON) (mΩ )

11
1.2
VGS=4.5V
9 VGS=4.5V
1
VGS=10V
7
0.8
VGS=10V
5
0 5 10 15 20 25 30 0.6
-50 -20 10 40 70 100 130 160
ID (A)
Figure 3: On-Resistance vs. Drain Current and Temperature (°C)
Gate Voltage Figure 4: On-Resistance vs. Junction Temperature

30 1.0E+01

1.0E+00
25 ID=20A 125°C
1.0E-01 25°C
RDS(ON) (mΩ )

20
IS (A)

1.0E-02
15 125°C
1.0E-03

10 1.0E-04
25°C

5 1.0E-05
2 4 6 8 10 12 14 16 18 20 0.0 0.2 0.4 0.6 0.8 1.0

VGS (Volts) VSD (Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AOL1428

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 1500

8 1200 Ciss

Capacitance (pF)
VDS=15V
VGS (Volts)

6 ID=20A 900

4 600
Coss

2 300
Crss
0
0
0 5 10 15 20 0 5 10
15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000.0
140

100.0 10µs 120

TJ(Max)=175°C
RDS(ON) 100µ
TC=25°C
limited 100
Power (W)
ID (Amps)

10.0 1m
10ms 80
1.0 0.1
DC 60
TJ(Max)=175°C
0.1 TC=25°C 40

20
0.0
0.001 0.01 0.1 1 10 100
0.01 0.1 1 10 100
VDS (Volts) Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Safe
Case (Note F)
Operating Area (Note F)

10
D=Ton/T In descending order
Zθ JA Normalized Transient

TJ,PK=TC+PDM.ZθJc.RθJc D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

RθJC=3.5°C/W
1

PD
0.1

Ton
Single Pulse T

0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AOL1428

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

60 50
ID(A), Peak Avalanche Current

TA=25°C
50

Power Dissipation (W)

40

40
30
30
20
20
10
10

0 0
0.000001 0.00001 0.0001 0.001 0.01 0 25 50 75 100 125 150 175

Time in avalanche, tA (s) TCASE (°C)

Figure 12: Single Pulse Avalanche capability Figure 13: Power De-rating (Note B)

60 140

120
Current rating ID(A)

100 TJ(Max)=150°C
40
Power (W)

TA=25°C
80

60
20
40

20

0
0
0.0001 0.001 0.01 0.1 1 10 100 1000
0 25 50 75 100 125 150 175
Pulse Width (s)
TCASE (°C)
Figure 15: Single Pulse Power Rating Junction-to-
Figure 14: Current De-rating (Note B)
Ambient (Note G)

10
In descending order
Zθ JA Normalized Transient

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

0.1

PD
D=Ton/T
0.01
TJ,PK=TA+PDM.ZθJA.RθJA Ton
Single Pulse
RθJA=55°C/W T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AOL1428

Gate Charge Test Circuit & Waveform

Vgs
Qg

+ 10V
VDC
+ Qgs Qgd
- VDC Vds
DUT -
Vgs
Ig

Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+
Vgs VDC Vdd
Rg -
10%

Vgs Vgs t d(on) tr t d(off) tf

t on t off

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds EAR= 1/2 LI AR BVDSS

Id Vds

Vgs +
Vgs VDC Vdd I AR
Rg - Id

DUT
Vgs Vgs

Diode Recovery Tes t Circuit & Waveforms

Vds + Qrr = - Idt

DUT
Vgs

Vds - L Isd IF trr

Isd dI/dt
+ IRM
Vgs Vdd
VDC
Vdd
Ig
- Vds

Alpha & Omega Semiconductor, Ltd. www.aosmd.com