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Compandor
The NE570 is a versatile low cost dual gain control circuit in which
either channel may be used as a dynamic range compressor or
expandor. Each channel has a full−wave rectifier to detect the average
value of the signal, a linerarized temperature−compensated variable
gain cell, and an operational amplifier.
The NE570 is well suited for use in cellular radio and radio http://onsemi.com
communications systems, modems, telephone, and satellite
broadcast/receive audio systems. MARKING
DIAGRAM
Features
• Complete Compressor and Expandor in One IC 16
• Temperature Compensated
• Greater than 110 dB Dynamic Range 1 NE570D
• Operates Down to 6.0 VDC AWLYYWWG
• System Levels Adjustable with External Components SOIC−16 WB
• Distortion may be Trimmed Out D SUFFIX
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• Pb−Free Packages are Available* CASE 751G
Plastic Small Outline Package;
16 Leads; Body Width 7.5 mm
Applications
• Cellular Radio
• Telephone Trunk Comandor A = Assembly Location
• High Level Limiter WL = Wafer Lot
YY = Year
• Low Level Expandor − Noise Gate WW = Work Week
• Dynamic Noise Reduction Systems G = Pb−Free Package
• Voltage−Controlled Amplifier
• Dynamic Filters PIN CONNECTIONS
MAXIMUM RATINGS
RECT_CAP_1 1 16 RECT_CAP_2
Rating Symbol Value Unit
RECT_IN_1 2 15 RECT_IN_2
Maximum Operating Voltage VCC 24 VDC DG_CELL_IN_1 3 14 DG_CELL_IN_2
Operating Ambient Temperature Range TA 0 to +70 °C GND 4 13 VCC
Operating Junction Temperature TJ 150 °C INV_IN_1 5 12 INV_IN_2
Power Dissipation PD 400 mW RES_R3_1 6 11 RES_R3_2
Thermal Resistance, Junction−to−Ambient RqJA 105 °C/W OUTPUT_1 7 10 OUTPUT_2
Stresses exceeding Maximum Ratings may damage the device. Maximum THD_TRIM_1 8 9 THD_TRIM_2
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the (Top View)
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
THD TRIM R3 INVERTER IN See detailed ordering and shipping information in the package
R3 dimensions section on page 9 of this data sheet.
R2 20 kW VARIABLE 20 kW
DG CELL IN −
GAIN
OUTPUT
VREF
R4 +
30 kW 1.8 V
R1 10 kW
RECT IN RECTIFIER
RECT CAP
Figure 1. Block Diagram
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
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NE570
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NE570
VCC = 15 V
0.1 mF 10 mF
13
6, 11
20 kW
3, 14 20 kW
V1 DG − 7, 10
VO
2.2 mF +
VREF
2, 15 10 kW 30 kW
V2
2.2 mF
4 1, 16 5, 12 8, 9
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NE570
BASIC CIRCUIT HOOK−UP AND OPERATION Figure 7 shows the hook−up for a compressor. This is
Figure 5 shows the block diagram of one half of the chip, essentially an expander placed in the feedback loop of the op
(there are two identical channels on the IC). The full−wave amp. The DG cell is set−up to provide AC feedback only, so
averaging rectifier provides a gain control current, IG, for the a separate DC feedback loop is provided by the two RDC and
variable gain (DG) cell. The output of the DG cell is a current CDC. The values of RDC will determine the DC bias at the
which is fed to the summing node of the operational output of the op amp. The output will bias to:
ǒ1 ) R ǓV
amplifier. Resistors are provided to establish circuit gain and ) R DC2
DC1
set the output DC bias. V OUT DC + REF
R4
THD_TRIM R3
8, 9 6, 11
INV. IN
5, 12
V OUT DC + 1 ) ǒ R DC TOT
30 kW
Ǔ
1.8 V
R2 R3
20 kW 20 kW The output of the expander will bias up to:
DG_CELL_IN
ǒ 1 ) RR Ǔ V
DG − 7, 10
3, 14
IG R4 VREF + OUTPUT V OUT DC + 3
REF
R1 30 kW 1.8 V 4
10 kW
R3 GAIN = ǒ2 RR31VRIN2(avg.)
IB
Ǔ 12
IB = 140 mA
*CIN1 R2
DG − * EXTERNAL COMPONENTS
VOUT
R4 VREF + Figure 7. Basic Compressor
VIN
*CIN2 R1
*CRECT
NOTES: 2
2 R3 VIN (Avg.)
GAIN =
R1 R2 IB
IB = 140 mA
* EXTERNAL COMPONENTS
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NE570
CIRCUIT DETAILS−RECTIFIER respectively. ICs such as this have typical NPN β’s of 200
Figure 8 shows the concept behind the full−wave and PNP β’s of 40. The α’s of 0.995 and 0.975 will produce
averaging rectifier. The input current to the summing node errors of 0.5% on negative swings and 2.5% on positive
of the op amp, VIN/R1, is supplied by the output of the op swings. The 1.5% average of these errors yields a mere
amp. If we can mirror the op amp output current into a 0.13 dB gain error.
unipolar current, we will have an ideal rectifier. The output At very low input signal levels the bias current of Q2,
current is averaged by R5, CR, which set the averaging time (typically 50 nA), will become significant as it must be
constant, and then mirrored with a gain of 2 to become IG, supplied by Q5. Another low level error can be caused by DC
the gain control current. coupling into the rectifier. If an offset voltage exists between
Figure 9 shows the rectifier circuit in more detail. The op the VIN input pin and the base of Q2, an error current of
amp is a one−stage op amp, biased so that only one output VOS/R1 will be generated. A mere 1.0 mV of offset will
device is on at a time. The non−inverting input, (the base of cause an input current of 100 nA, which will produce twice
Q1), which is shown grounded, is actually tied to the internal the error of the input bias current. For highest accuracy, the
1.8 V VREF. The inverting input is tied to the op amp output, rectifier should be coupled capacitively. At high input levels
(the emitters of Q5 and Q6), and the input summing resistor the β of the PNP Q6 will begin to suffer, and there will be an
R1. The single diode between the bases of Q5 and Q6 assures increasing error until the circuit saturates. Saturation can be
that only one device is on at a time. To detect the output avoided by limiting the current into the rectifier input to
current of the op amp, we simply use the collector currents of 250 mA. If necessary, an external resistor may be placed in
the output devices Q5 and Q6. Q6 will conduct when the series with R1 to limit the current to this value. Figure 10
input swings positive and Q5 conducts when the input shows the rectifier accuracy versus input level at a frequency
swings negative. The collector currents will be in error by the of 1.0 kHz.
α of Q5 or Q6 on negative or positive signal swings,
V+
V+ Q3 Q7
I = VIN/R1
Q4
R1
− Q5
VIN
R1
+ D1 10 kW
Q1 Q2 VIN
R5
10 kW R5
CR IG 10 kW
Q6 Q8
Q9
I1 I2
CR
NOTE: V−
IG = 2 VIN avg
R1
+1
ERROR GAIN dB
−1
−40 −20 0
RECTIFIER INPUT dBm
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NE570
At very high frequencies, the response of the rectifier will The op amp maintains the base and collector of Q1 at
fall off. The roll−off will be more pronounced at lower input ground potential (VREF) by controlling the base of Q2. The
levels due to the increasing amount of gain required to switch input current IIN (= VIN/R2) is thus forced to flow through
between Q5 or Q6 conducting. The rectifier frequency Q1 along with the current I1, so IC1 = I1 + IIN. Since I2 has
response for input levels of 0 dBm, −20 dBm, and −40 dBm been set at twice the value of I1, the current through Q2 is:
is shown in Figure 11. The response at all three levels is flat I2 * (I1 ) IIN) + I1 * IIN + IC2.
to well above the audio range.
The op amp has thus forced a linear current swing between
Q1 and Q2 by providing the proper drive to the base of Q2.
This drive signal will be linear for small signals, but very
non−linear for large signals, since it is compensating for the
GAIN ERROR (dB)
INPUT = 0 dBm
non−linearity of the differential pair, Q1 and Q2, under large
0 −20 dBm signal conditions.
The key to the circuit is that this same predistorted drive
3 −40 dBm signal is applied to the gain control pair, Q3 and Q4. When
two differential pairs of transistors have the same signal
applied, their collector current ratios will be identical
regardless of the magnitude of the currents. This gives us:
I C1 I I ) I IN
10 k 1 MEG + C4 + 1
FREQUENCY (Hz) I C2 I C3 I 1 * I IN
2 3 mV
I1
140 mA 2 mv
− 1
1 mV
+ 0.34
R2
20 kW −6 0 +6
VIN Q1 Q2 Q3 Q4 INPUT LEVEL (dBm)
IIN
Figure 13. DG Cell Distortion vs. Offset Voltage
I2 ( = 2 I1 ) IG
280 mA
If the transistors are not perfectly matched, a parabolic,
NOTE:
V− non−linearity is generated, which results in second
IG IG VIN
IOUT =
I1
IIN =
I1 R2
harmonic distortion. Figure 13 gives an indication of the
magnitude of the distortion caused by a given input level and
Figure 12. Simplified DG Cell Schematic offset voltage. The distortion is linearly proportional to the
magnitude of the offset and the input level. Saturation of the
gain cell occurs at a +8.0 dBm level. At a nominal operating
level of 0 dBm, a 1.0 mV offset will yield 0.34% of second
harmonic distortion. Most circuits are somewhat better than
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NE570
this, which means our overall offsets are typically about mV. Control signal feedthrough is generated in the gain cell by
The distortion is not affected by the magnitude of the gain imperfect device matching and mismatches in the current
control current, and it does not increase as the gain is sources, I1 and I2. When no input signal is present, changing
changed. This second harmonic distortion could be IG will cause a small output signal. The distortion trim is
eliminated by making perfect transistors, but since that effective in nulling out any control signal feedthrough, but
would be difficult, we have had to resort to other methods. in general, the null for minimum feedthrough will be
A trim pin has been provided to allow trimming of the different than the null in distortion. The control signal
internal offsets to zero, which effectively eliminated second feedthrough can be trimmed independently of distortion by
harmonic distortion. Figure 14 shows the simple trim tying a current source to the DG input pin. This effectively
network required. trims I1. Figure 16 shows such a trim network.
VCC VCC
R−SELECT FOR
R
3.6 V
3.6 V
470 kW
6.2 kW
20 kW 100 kW TO PIN 3 OR 14
To THD Trim
≈200 pF
Figure 15 shows the noise performance of the DG cell. The OPERATIONAL AMPLIFIER
maximum output level before clipping occurs in the gain cell The main op amp shown in the chip block diagram is
is plotted along with the output noise in a 20 kHz bandwidth. equivalent to a 741 with a 1.0 MHz bandwidth. Figure 17
Note that the noise drops as the gain is reduced for the first shows the basic circuit. Split collectors are used in the input
20 dB of gain reduction. At high gains, the signal to noise pair to reduce gM, so that a small compensation capacitor of
ratio is 90 dB, and the total dynamic range from maximum just 10 pF may be used. The output stage, although capable
signal to minimum noise is 110 dB. of output currents in excess of 20 mA, is biased for a low
quiescent current to conserve power. When driving heavy
+20 loads, this leads to a small amount of crossover distortion.
0
I1 I2
MAXIMUM
Q6
OUTPUT (dBm)
−60 Q5
Q4
−80 Q3
NOISE IN
20 kHz BW
−100 Figure 17. Operational Amplifier
−40 −20 0
VCA GAIN (dB)
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NE570
ORDERING INFORMATION
Device Package Temperature Range Shipping †
Plastic Small Outline Package;
16 Leads; Body Width 7.5 mm
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NE570
PACKAGE DIMENSIONS
SOIC−16 WB
CASE 751G−03
ISSUE C
NOTES:
D A 1. DIMENSIONS ARE IN MILLIMETERS.
q 2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
16 9 3. DIMENSIONS D AND E DO NOT INLCUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
M
h X 45 _
M
E
EXCESS OF THE B DIMENSION AT MAXIMUM
8X
0.25
MATERIAL CONDITION.
MILLIMETERS
DIM MIN MAX
1 8 A 2.35 2.65
A1 0.10 0.25
B 0.35 0.49
16X B B C 0.23 0.32
D 10.15 10.45
0.25 M T A S B S E 7.40 7.60
e 1.27 BSC
H 10.05 10.55
h 0.25 0.75
L 0.50 0.90
0_ 7_
A
q
L
SEATING
14X e PLANE
A1
T C
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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