DJM 5103

BASIC POWER ELECTRONIC

CHAPTER 1

SEMICONDUCTOR
COMPONENTS
PN NUR SYAMIMI RUSLI
 INTRODUCTION
POWER ELECTRONICS

At the end of this chapter, student should be able to:

 Explain semiconductor components and their characteristic
 DEFINITION

Power electronics refers to control and conversion of electrical

power by power semiconductor devices wherein this devices
operate as switches.

Combine electric power ,

electronic and control system.

 Basic block diagram of power

electronics system
 HISTORY
• The first Power Electronic Device developed was the Mercury Arc
Rectifier (electromagnetic switch during the year 1900)
- Used in industrial motor, electrical locomotive
• Development of semiconductor & invention of transistor in 1947
resulted application of semiconductor in development of power
semiconductor device.
APPLICATION : COMMERCIAL
• Heating & air conditioning
• Lighting
• Refrigeration
• Computer and office equipment
APPLICATION : INDUSTRIAL
• Pump & compressor
• Furnace
• Welding equipment
APPLICATION : DOMESTIC
• Light dimmer
• Cooking equipment
• Freezer
Application examples
Static Application: DC Power Supply

AC voltage
DIODE FILTER DC-DC
LOAD
RECTIFIER CONVERTER

AC LINE
VOLTAGE V
(1F or 3 F) control
(derived from
feedback circuit)
Application examples
Power semiconductor devices
(Power switches)
• Power switches: work-horses of PE systems.
I
• Operates in two states: Vswitch= 0 POWER SWITCH
Vin
• Fully on. i.e. switch closed.
• Conducting state
SWITCH ON (fully closed)

• Fully off , i.e. switch opened. I=0

• Blocking state Vswitch= Vin

Vin

• Power switch never operates in linear mode.

SWITCH OFF (fully opened)
•
Power SEMICONDUCTOR DEVICE
1. Power semiconductor device : act as a power switches
2. Power switches- works in 2 states only
i. Fully ON (Conducting)
ii. Fully OFF (Blocking)
3. Three groups of power conductor device
i. Diode – Uncontrolled switches
ii. Power Transistor - semi control switch
iii. Power Thyristor - fully control switch
 Semiconductor Component
- Uncontrolled Switch-
Power Diode

A diode is an electrical device allowing current to

flow in one direction only from anode to cathode
TYPES OF DIODES
LED

ZENER DIODE

PHOTO DIODE
DIODE CHARACTERISTIC

Diode operation:

(a)Current flow is permitted (anode to cathode); the diode

is forward biased.
(b) Current flow is prohibited (cathode to anode); the diode
is reversed biased.
 DIODE CHARACTERISTIC
• A power diode is a 2 terminal PN- junction device
• Free electrons on the n-side and free holes on the p-side move
across the junction
• When a free electron meets a free hole it can ‘drop into it’
• This means the hole and electron cancel each other and varnish
• Movement between hole and electron cause a diode to conduct.
DIODE CHARACTERISTIC
DIODE CHARACTERISTIC

The diode characteristic can be divided into 3 regions:

1. Forward biased : Vd> 0

2. Reverse biased : Vd < 0
3. Breakdown region : Vd < -Vbr
DIODE CHARACTERISTIC
• The v-I characteristics can be expressed by an equation known as
‘Schockley diode equation’.

• ID = IS(𝑒 𝑉𝑑/𝑛𝑉𝑇 - 1)

• Where:
• Id = current through the diode, A
• Vd = Diode voltage (forward voltage)
• IS = Leakage current (or reverse saturation) typically
• 10−6 to 10−15 A.

• n = emission coefficient (between 1 and 2)

• VT = Thermal Voltage
n = emission coefficient (between 1 and 2)
VT = Thermal Voltage
 Exercise
The forward voltage drop of a power diode is Vd = 1.2V at Id =
300A. Assuming that n = 2 and Vt = 25.7mV, find the reverse
saturation current Is.

Id = Is(𝑒 𝑉𝑑/𝑛𝑉𝑡 - 1)

𝐼𝑑
Is =
(𝑒 𝑉𝑑/𝑛𝑉𝑡 − 1)
300
=
(𝑒 1.2/2(25.7𝑚) −1)
= 0.02µA #
Diode types Standard diode Fast recovery diode Schottky diode
Recovery time Relative high typically 25µs Low Almost zero
Normally less than 5µs
Rating Voltage : 50V – 5kV Voltage: 50V – 3kV Voltage : limited to 100V
Current : from <1A to several Current : from <1A to few Current: 1A- 300A
thousands of Amp hundreds of Amp.
Application For low input frequency up to Used where the speed of Mostly used in low voltage,
1kHz applications: critical important: high current dc power
• Rectifier -DC to DC converter supplies.
• Converter line commutated -DC to AC converter • Also in low current
converter power supplies for
increase efficiency
Generally manufactured by • For voltage rating • A schottky diode has
diffusion above 400V, they are aluminium-silicon junction
generally made by & the silicon is generally
diffusion & the n-type.
recovery time is • When a schottky diode is
controlled by platinum forward biased , free
or gold diffusion electrons on the n side
• For voltage rating gain enough energy and
below 400V, epitaxial travel to the metal side
diode provides very cause a forward current.
fast recovery time. • Since the metal does not
Epitaxial diodes have a have any holes, there is no
very narrow base charge storage and no
width resulting in fast reverse recovery time -
recovery time of as almost zero.
low as 50 µs • Therefore, its can switch
off faster than ordinary pn
junction diode.
 Power transistor
(Controllable switch)

• Can be turn ON & OFF by low power control signal

• Practical transistor are differ from ideal device and have
certain limitation and certain limitations.
• Example :
1. BJT,
2. IGBT,
3. MOSFET,
 CONTROL SWITCH
-POWER TRANSISTOR-
BIPOLAR JUNCTION TRANSISTOR

Semiconductor device to allow full control

over its turn on and turn off operations.

Power transistors switch ON much faster than Thyristor

They may have ON in less than 1µs and turn OFF in less than 2µs.

Therefore, power transistors can be used in applications where the

frequency is as high as 50kHz

Fail under certain high voltage and high current conditions.

 BJT
(Bipolar junction transistors)

• A transistor is a three-layer p-n-p

or n-p-n semiconductor device
having a two junction.
• This type of transistor is known as
a bipolar junction transistor BJT.
A transistor is a three-layer p-n-p or
n-p-n semiconductor device having a two junction.
BJT Bipolar junction transistors
Basic transistor circuit.
Collector characteristic curves
Collector characteristic curves for various values of IB
 INSULATED GATE BIPOLAR
TRANSISTOR (IGBT)

IGBT is a three-terminal power semiconductor

device primarily used as an electronic switch.
Combining high efficiency and fast switching.
 Application: Electric car, trains, variable speed
refrigerators, air-conditioners.
 Combination advantages BJTs and MOSFETS
 High Input Impedance (MOSFET)
 Low On-state Conduction Losses (BJT)
 But no second breakdown problem (BJT)
Operation of IGBT

 When gate terminal is kept open there

will not be any current flow due to n- layer.
 When gate terminal is kept positive potential with respect to emitter,
the negative charge is induced in n- layer due to capacitor action.
 Thus the current flows from emitter to collector through the path shown
in figure.
 When gate voltage is increased current flow through the device will
also increase.
•It shows relation between VCE & IC.
•When VCE is increased, IC also increases, even if VCE increases furthermore, the IC remains constant.- See more at: https://www.pantechsolutions.net/power-electronics/igbt-introd

Output Characteristics

 It shows relation between

VCE & IC

 When VCE is increased, IC

also increases, even if VCE
increases furthermore, the IC
remains constant.
Transfer Characteristics
METAL OXIDE SILICON FIELD EFFECT TRANSISTOR
(MOSFET)

It is a special type of field-effect transistor

(FET).
MOSFET ??????

 MOSFET is a voltage controlled device

The MOSFET have “Gate“, “Drain” and “Source” terminals.
By applying voltage at the gate, it generates an electrical field to
control the current flow through the channel between drain and
source - no current flow from the gate into the MOSFET.
Basic MOSFET Structure
SYMBOL
 V-I Characteristics

ID

+
VGS
_

VDS
 CHARACTERISTIC
 Basically low voltage device. . High voltage device are available up
to 600V but with limited current.

Switching speed very high in nanoseconds. Problem, have a

electrostatic discharge required special handling.
 THYRISTOR (SCR)
 SCR has 4 layer of alternating N and P type materials allows
current to flow through if its gate receive a trigger current.
• It has three terminals: Anode, cathode and gate.

• Control the conduction under forward bias by applying a

current into the Gate terminal

• Anode, Cathode as for a conventional pn junction diode

 A (Anode)
Ia

+
Ig Vak
_

G (Gate)

K (Cathode)

Thyristor: Symbol v-i characteristics

• If the forward breakover voltage (Vbo) is exceeded, the SCR “self-

triggers” into the conducting state.
• “Normal” conditions for thyristors to turn on:
• the device is in forward blocking state (i.e Vak is positive)
• a positive gate current (Ig) is applied at the gate
• In reverse -biased mode, the SCR behaves like a diode.
TYPES OF THYRISTORS
 GATE CONTROLLED SWITCH GCS
• Opening with a reverse-biased trigger and it is
closed by a positive trigger and opened by a
negative trigger (or by low-current drop out).

• The most obvious advantage of GCS over the

SCR is the fact that it can be turned on or off
by applying the proper pulse to the cathode
gate (without the anode gate and associated
circuitry required for the SCS).

• A second very important advantage of GCS is

improved switching characteristics.

• useful in counters, digital circuits, voltage

regulators and other applications in which a
negative trigger is available for turn-off.
POWER SWITCHES: POWER RATINGS