UTC 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR

POWER AMPLIFIER
APPLICATIONS

FEATURES
* Recommended for 100W High Fidelity Audio Frequency
Amplifier Output Stage.
* Complementary to UTC 2SA1943

TO-3PL

*Pb-free plating product number: 2SC5200L

ABSOLUTE MAXIMUM RATINGS (TC = 25℃)

PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO 230 V
Collector-Emitter Voltage VCEO 230 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 15 A
Base Current IB 1.5 A
Collector Power Dissipation (Tc=25℃) PC 150 W
Junction Temperature TJ 150 ℃
Storage Temperature Range Tstg -55 ~ 150 ℃

ELECTRICAL CHARACTERISTICS (Tc=25℃)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Emitter Breakdown Voltage V(BR) CEO IC= 50mA, IB=0 230 V
Collector-Emitter Saturation Voltage VCE (sat) IC= 8A, IB= 0.8A 0.40 3.0 V
Base -Emitter Voltage VBE VCE= 5V, IC= 7A 1.0 1.5 V
Collector Cut-off Current ICBO VCB = 230V, IE=0 5.0 μA
Emitter Cut-off Current IEBO VEB= 5V, IC=0 5.0 μA
DC Current Gain hFE1 VCE= 5V, IC= 1A 55 160
hFE2 VCE= 5V, IC= 7A 35 60
Transition Frequency fT VCE= 5V, IC= 1A 30 MHz
Collector Output Capacitance Cob VCB= 10V, IE=0, f=1MHz 200 pF
Note: hFE (1) Classification, R : 55 ~ 110, O : 80 ~ 160

CLASSIFICATION OF HFE1
RANK R O
Range 55 ~ 110 80 ~ 160

UTC UNISONIC TECHNOLOGIES CO. LTD 1

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UTC 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
IC - VCE IC - VBE
-20 -20
COMMON EMITTER COMMON EMITTER
TC =25℃ VCE = 5V
COLLECTOR CURRENT, IC (A)

COLLECTOR CURRENT, IC (A)

-16 800 -16
600
400
-12
300 250 -12
200
150
100 TC =100℃
-8 -8
IB = 10mA
50
40 25
-4 -4
30 -25
20
0 0
0 2 4 6 8 10 0 0.4 0.8 1.2 1.6 2.0
COLLECTOR-EMITTER VOLTAGE, V CE (V) BASE-EMITTER VOLTAGE, V BE (V)

VCE(sat) - IC hFE - IC
COLLECTOR-EMITTER SATURATION

3 300
TC =100℃
DC CURRENT GAIN, hFE
VOLTAGE, VCE(sat) (V)

1 100 25

-25
0.3 30
TC =100℃

0.1 -25 10

25
0.03 3
COMMON EMITTER COMMON EMITTER
IC / IB = 10 IC / IB = 10
0.01 1
0.01 0.1 1 10 100 0.01 0.1 1 10 100

COLLECTOR CURRENT, IC (A) COLLECTOR CURRENT, IC (A)

SAFE OPERATING AREA

50
IC MAX. (PULSED)※
30 1ms※
IC MAX.
(CONTINUOUS)
10ms※
10
COLLECTOR CURRENT, I C (A)

DC OPERATION
5
TC =25℃
3 100ms※

0.5
0.3
※SINGLE NONREPETITIVE
PULSE TC = 25℃
0.1 CURVES MUST BE
DERATED LINEARLY
0.05 WITH INCREASE IN VCEO MAX.
TEMPERATURE.
0.03
3 10 30 100 300 1000

COLLECTOR-EMITTER VOLTAGE, VCE (V)

UTC UNISONIC TECHNOLOGIES CO. LTD 2

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UTC 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.

UTC UNISONIC TECHNOLOGIES CO. LTD 3

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