SHINDENGEN

Schottky Rectifiers (SBD) Dual

OUTLINE DIMENSIONS
S60SC4M Case : MTO-3P
Unit : mm

40V 30A

FEATURES
● Tj150℃
● PRRSM avalanche guaranteed
● Small θ jc
● High current capacity

APPLICATION
● Switching power supply
● DC/DC converter
● Home Appliances, Office Equipment
● Telecommunication

RATINGS
●Absolute Maximum Ratings (If not specified Tc=25℃)
Item Symbol Conditions Ratings Unit
Storage Temperature Tstg -40∼150 ℃
Operating Junction Temperature Tj 150 ℃
Maximum Reverse Voltage VRM 40 V
Repetitive Peak Surge Reverse Voltage VRRSM Pulse width 0.5ms, duty 1/40 45 V
Average Rectified Forward Current IO 50Hz sine wave, R-load, Rating for each diode Io/2, Tc=126℃ 60 A
Peak Surge Forward Current IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=125℃ 500 A
Repetitive Peak Surge Reverse Power P RRSM Pulse width 10μs, Rating of per diode, Tj=25℃ 1000 W
Mounting Torque TOR (Recommended torque：0.5N･m) 0.8 N･m

●Electrical Characteristics (If not specified Tc=25℃)

Item Symbol Conditions Ratings Unit
Forward Voltage VF IF =30A, Pulse measurement, Rating of per diode Max.0.55 V
Reverse Current IR VR=VRM, Pulse measurement, Rating of per diode Max.25 mA
Junction Capacitance Cj f=1MHz, VR=10V, Rating of per diode Typ.1000 pF
Thermal Resistance θjc junction to case Max.0.5 ℃/W

Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd

 S60SC4M Forward Voltage
1000

100
Forward Current IF [A]

Tc=150°C [MAX]
Tc=150°C [TYP]

Tc=25°C [MAX]
Tc=25°C [TYP]
10

Pulse measurement per diode

1
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6

Forward Voltage VF [V]

 S60SC4M Junction Capacitance

10000
f=1MHz
Tc=25°C
TYP
per diode

1000

Junction Capacitance Cj [pF]

100

0.1 1 10

Reverse Voltage VR [V]

 S60SC4M Reverse Current
10000

Tc=150°C [MAX]
1000

Tc=150°C [TYP]
Reverse Current IR [mA]

100 Tc=125°C [TYP]

Tc=100°C [TYP]

10
Tc=75°C [TYP]

Pulse measurement per diode

0.1
0 5 10 15 20 25 30 35 40

Reverse Voltage VR [V]

 S60SC4M Reverse Power Dissipation
80
DC
D=0.05
70
0.1
Reverse Power Dissipation PR [W]

60 0.2

0.3
50

40
0.5

30

20
SIN
0.8
10

0
0 10 20 30 40 50

Reverse Voltage VR [V]

Tj = 150°C 0
VR

tp
D=tp /T
T
 S60SC4M Forward Power Dissipation
60

DC
50 D=0.8
Forward Power Dissipation PF [W]

0.5
SIN
40 0.3
0.2
0.1
30 0.05

20

10

0
0 20 40 60 80 100

Average Rectified Forward Current IO [A]

Tj = 150°C
IO
0
tp
D=tp /T
T
 S60SC4M Derating Curve
120
Average Rectified Forward Current IO [A]

DC
100

D=0.8
80

0.5
SIN
60
0.3

0.2
40
0.1

0.05
20

0
0 20 40 60 80 100 120 140 160

Case Temperature Tc [°C]

VR = 20V
IO
0
0
VR

tp
D=tp /T
T
 S60SC4M Peak Surge Forward Capability
800

IFSM
10ms 10ms
700
1 cycle
non-repetitive,
sine wave,
600 Tj=125°C before
surge current is applied
Peak Surge Forward Current IFSM [A]

500

400

300

200

100

0
1 2 5 10 20 50 100

Number of Cycles [cycles]

 SBD Repetitive Surge Reverse Power Derating Curve
120

100
PRRSM Derating [%]

80

60

40

20

0
0 50 100 150

Junction Temperature Tj [°C]

IRP

IR VR
VRP
0.5IRP

0
tp

PRRSM = IRP × VRP

 SBD Repetitive Surge Reverse Power Capability
10
PRRSM(t p) / PRRSM(t p=10µs) Ratio

0.1
1 10 100

Pulse Width t p [µs]

IRP

IR VR
VRP
0.5IRP

0
tp

PRRSM = IRP × VRP