Chapter

C apte 6

FET Biasing

October 4, 2006 Chapter 6 FET Biasing 1

INTRODUCTION

The general relationships that can be applied to the dc analysis of all FET amplifiers
are
and

For JFETs and depletion-type MOSFETs, Shockley’s equation is applied to relate the
i
input
t and
d output
t t quantities:
titi

F enhancement-type
For h tt MOSFETs,
MOSFET the
th following
f ll i equation
ti iis applicable:
li bl

It is particularly important to realize that all of the equations above are for the
device only!. They do not change with each network configuration so long as the
g
device is in active region.

October 4, 2006 Chapter 6 FET Biasing 2

(A) FIXED-BIAS CONFIGURATION

Vi&Vo:input & output ac levels

C1&C2: the coupling capacitors
For dc analysis; (open for dc analysis &
low impedance (essentially
short circuit) for ac analysis.
The zero-volt drop across RG permits replacing RG by a short-circuit equivalent, as
g in the network redrawn for the dc analysis.
appearing y

October 4, 2006 Chapter 6 FET Biasing 3

 The fact that the negative terminal of the battery is
connected directlyy to the defined positive
p p
potential of
VGS clearly reveals that the polarity of VGS is directly
opposite to that of VGG.
KVL in the clockwise direction will result in

Since VGG is a fixed dc supply, the voltage VGS is

fixed in magnitude, resulting in the notation “fixed-
bias configuration”
configuration .
The resulting level of drain current ID is now controlled
by Shockley’s equation.

Since VGS is fixed quantity, its magnitude and sign can simply be substituted into Shockley’s
equation
ti and d th
the resulting
lti llevell off ID calculated.
l l t d H Here, a mathematical
th ti l solution
l ti tto a FET
configuration is quite direct.

October 4, 2006 Chapter 6 FET Biasing 4

 On the other hand, graphical analysis would require a plot of Shockley’s equation.
Recall that choosing VGS=VP/2 will result in a drain current of IDSS/4 when plotting the
equation.

IDSS/2

O.3VP

The fixed level of VGS has been

In this analysis, four points defined by IDSS, superimposed as a vertical line at
VP and intersection will be sufficient for p
plotting
g VGS = -VGG.
the curve. The quiescent level of ID is determined
by drawing a horizontal line from the
Q-point to the vertical ID axis.

October 4, 2006 Chapter 6 FET Biasing 5

 Once the network is constructed and operating,
the dc levels off ID and VGS that will be
measured by the meters are the quiescent values.

The drain-to-source
Th d i t voltage,V
lt VDS off the
th output
t t
section can be determined by applying KVL;

Recall
eca tthat
at ssingle-subscript
g e subsc pt voltages
o tages refer
e e to
the voltage at a point with respect to ground.

Using double-subscript notation:

October 4, 2006 Chapter 6 FET Biasing 6

Example (1): Determine the following.

Solution:
Mathematical Approach
pp

October 4, 2006 Chapter 6 FET Biasing 7

 Graphical Approach:

The resulting Shockley curve and the

vertical line at VGS = -2V are provided
in the figure.
It is certainly difficult to read beyond the
second place without significantly
increasing the size of the figure, but a
solution of 55.6mA
6mA from the graph is quite
IDSS/2= 5mA
acceptable.
(a)

0.3VP

The results clearly confirm the fact that the mathematical and graphical approaches generate
solutions that are quite close.

October 4, 2006 Chapter 6 FET Biasing 8

(B) SELF-BIAS CONFIGURATION
The self-bias configuration eliminates the need for two dc supplies as required for fixed-bias
configuration. The controlling gate-to-source voltage, VGS is now determined by the voltage
across a resistor RS introduced in the source leg of the configuration.

For the dc analysis, the capacitors can again be replaced

by “open circuits” and the resistor RG replaced by a short-
circuit equivalent since IG = 0A.
0A

October 4, 2006 Chapter 6 FET Biasing 9

The current through RS is the source current IS, but IS = ID and

For the indicated loop, we find that

Note that VGS is a function of the output current ID and not fixed in magnitude as occurred
for the fixed-bias configuration.

The mathematical solution could be obtained simply by substituting the above equation into
Shockley’s equation as shown below;

October 4, 2006 Chapter 6 FET Biasing 10

 Graphical Approach:

First, the transfer characteristics are defined using 4 points technique.

Then, a straight line has to be defined on the same graph by identifying two points.
Point (1); The most obvious condition to apply is ID = 0 A since it results in
VGS = -IDRS =(0 A) RS = 0 V. Therefore, the first point is ID = 0A and VGS = 0V.

October 4, 2006 Chapter 6 FET Biasing 11

Point (2): For example, we choose a level of ID equal to one-half the saturation level.

The straight line is drawn using the above two points and the quescient point obtained at the
intersection of the straight line plot and the device characteristic curve.
The qquescient values of ID and VGS can then be determined and used to find the other
quantities of interest.
The level of VDS can be determined by applying KVL to the output circuit.

In addition;

October 4, 2006 Chapter 6 FET Biasing 12

Example (2): Determine the following.
Using 4 points
technique

Define 2 points
bias line

Basic equation;

Example:

October 4, 2006 Chapter 6 FET Biasing 13

 ( )
(a)

October 4, 2006 Chapter 6 FET Biasing 14

(C) VOLTAGE-DIVIDER BIASING

The voltage-divider
Th lt di id bibias arrangementt applied
li d tto BJT ttransistor
i t amplifiers
lifi iis also
l applied
li d
To FET amplifiers.
The basic construction is exactly the
same but the dc analysis of each is
quite difference.
IG = 0A for FET amplifiers, but the
magnitude of IB for common-emitter
BJT amplifiers can affect the dc levels
of current and voltage in both the
input and output circuits.
Recall that IB provided the link between
input and output circuits for the BJT
voltage-divider configuration while
VGS will do the same for the FET
configuration.

The network
Th t k can b
be redrawn
d as shown
h iin th
the nextt slide
lid ffor th
the d
dc analysis.
l i N Note
t th
thatt allll th
the
capacitors, including the bypass capacitor CS, have been replaced by an “open-circuit”
equivalent. In addition, the source VDD was separated into two equivalent sources to permit
p
a further separation of the input
p and output
p regions
g of the network.

October 4, 2006 Chapter 6 FET Biasing 15

 KCL requires that IR1 = IR2 and the series
equivalent circuit appearing to the left of the
figure can be used to find the level of VG.

The voltage VG, equal to the voltage across R2,

g the voltage-divider
can be found using g rule as
follows:

KVL in the clockwise direction to the indicated

loop will result in

and substituting we have

The procedure for plotting the above equation is not a difficult one and will proceed in the next
slide.

October 4, 2006 Chapter 6 FET Biasing 16

Since any straight line requires two points to be defined, first we can use the fact that
y
anywhere on the horizontal axis,, the current ID = 0 mA. Therefore,, select ID to be 0 mA,,
we are stating that we are somewhere on the horizontal axis.
The exact location can be determined by substituting ID = 0 mA into the previous equation
and finding the resulting value of VGS as follows:

Point No.1

The result specifies that whenever we plot the above equation, if we choose ID = 0 mA, the
value of VGS for the plot will be VG volts.

For the other point, let us employ the fact that at any point on the vertical axis VGS = 0 V
and solve for the resultingg value of ID:

Point No.2

October 4, 2006 Chapter 6 FET Biasing 17

The two points defined in the previous slide permit the drawing of a straight line. The
intersection of the straight line with the transfer curve in the region to the left of the vertical
axis will define the operating point and the corresponding levels of ID and VGS.

October 4, 2006 Chapter 6 FET Biasing 18

Since the intersection on the vertical axis is determined by ID = VG/RS and VG is fixed by
g values of RS will reduce the level of the ID intersection as
the input network, increasing
shown in the figure.

It is fairly obvious that:

Increasing values of RS result in

lower quiescent values of ID and
g
more negative values of VGS.

October 4, 2006 Chapter 6 FET Biasing 19

Once the quiescent values of IDQ and VGSQ
are determined
determined, the remaining network
analysis can be performed in the usual
manner.
That is,

October 4, 2006 Chapter 6 FET Biasing 20

Example (3): Determine the following.

October 4, 2006 Chapter 6 FET Biasing 21

Example (4): Determine the following.

October 4, 2006 Chapter 6 FET Biasing 22

DEPLETION-TYPE MOSFETs

The similarities in appearance between the transfer curves of JFETs and depletion-type
MOSFETs permit a similar analysis of each in the dc domain.

The primary difference between the two is the fact that depletion-type MOSFETs permit
operating points with positive values of VGS and levels of ID that exceed IDSS.

In fact for all the configurations discussed thus far

far, the analysis is the same if the JFET is
replaced by a depletion-type MOSFET.

The only undefined part of the analysis is how to plot Shockley’s equation for positive
values of VGS. How far into the region of positive values of VGS and values of ID greater
than IDSS does the transfer curve have to extend?.
For most situations, this required range will be fairly well defined by the MOSFET
parameters and the resulting bias line of the network.
network

October 4, 2006 Chapter 6 FET Biasing 23

Example (5): Determine the following.

October 4, 2006 Chapter 6 FET Biasing 24

Example (6): Repeat Example (5) with RS = 150 Ohm.

Example (7): Determine the following.

October 4, 2006 Chapter 6 FET Biasing 25

Example (8): Determine VDS.

October 4, 2006 Chapter 6 FET Biasing 26

 ENHANCEMENT-TYPE MOSFETs

Note: The transfer characteristics of the enhancement-type MOSFET are quite different
from those encountered for the JFET and depletion-type MOSFETs, resulting in a graphical
solution quite different from the preceding sections.

Recall that for the n-channel

enhancement-type MOSFET,
the drain current is
zero for levels of gate-to-source
voltage, VGS less than the threshold
level VGS(Th).
For levels of VGS greater than VGS(Th),
the drain current is defined by

Transfer characteristics of n-channel E-MOSFETs

October 4, 2006 Chapter 6 FET Biasing 27

Since specification sheets typically provide the threshold voltage and a level of drain current
ID(on) and its corresponding level of VGS(on).

To draw the characteristics curve, the constant k mentioned in the previous equation must be
determined from the specification sheet data by substituting ID(on) and VGS(on). into that equation.

Once k is defined, other levels of ID can be determined for chosen values of VGS.
yp y, a p
Typically, point between VGS(Th) and VGS(on) and one jjust g
greater than VGS(on) will
provide a sufficient number of points for the plotting.

October 4, 2006 Chapter 6 FET Biasing 28

(i) Feedback Biasing Arrangement

A popular biasing arrangement for enhancement-type MOSFETs is provided in the figure.

The resistor RG brings a suitably large voltage to the gate to drive the MOSFETs “ON”.
Since IG = 0 mA and VRG = 0 V, we can draw the dc equivalent network.

October 4, 2006 Chapter 6 FET Biasing 29

A direct connection now exists between drain and gate, resulting in

For the output circuit,

Then it also become

Then,
Network equation or
straight line equation

A procedure as previously described can be employed to draw a

straight line by determining the two pints that will define the plot on
the graph.

October 4, 2006 Chapter 6 FET Biasing 30

Substituting ID = 0 mA;

Substituting VGS = 0 V;

October 4, 2006 Chapter 6 FET Biasing 31

Example (9): Determine IDQ and VGSQ.

October 4, 2006 Chapter 6 FET Biasing 32

(ii) Voltage-Divider Biasing Arrangement
A second popular biasing arrangement for the enhancement-type MOSFETs
MOSFETs.

The fact that IG = 0 mA results in the following equation for VGG

as derived from the application
pp of the voltage-divider
g rule.

Applying KVL around the indicated loop will result in

For the output section;

Once IDQ and VGSQ are
known all the remaining
known,
quantities such as VDS,
VD and VS can be
determined.

October 4, 2006 Chapter 6 FET Biasing 33

Example (10): Determine IDQ , VGSQ.and VDS.

October 4, 2006 Chapter 6 FET Biasing 34