Don Honorio Ventura State

University
College of Engineering and Architecture
Electronics Engineering Department
Villa de Bacolor, Pampanga

NAME OF STUDENT: Baroso, John Lloyd T.

STUDENT NUMBER: 2019999003 DATE PERFORMED: October 28,2020
COURSE CODE: ELECS 1 Lab DATE SUBMITTED: October 28,2020
COURSE TITLE: Electronics Devices and Circuits YEAR AND SECTION: 2D
LAB. INSTRUCTOR: Engr. Christian N. Pineda GRADE:

LABORATORY EXPERIMENT NO. 1B

DIODE CHARACTERISTICS

Objective: To study and verify the functionality of a) PN junction diode in forward bias
b) PN junction diode in reverse bias
Biasing of PN junction Diode:
Forward bias operation
The P-N junction supports uni-directional current flow. If +ve terminal of the input supply is
connected to P- side and –ve terminal is connected the n side, then diode is said to be forward
biased condition. In this condition the height of the potential barrier at the junction is lowered
by an amount equal to given forward biasing voltage. Both the holes from p-side and electrons
from n-side cross the junction simultaneously thereby decreasing the depleted region. This
constitutes a forward current (majority carrier movement – diffusion current). Assuming
current flowing through the diode to be very large, the diode can be approximated as short-
circuited switch. Diode offers a very small resistance called forward resistance (few ohms)
Reverse bias operation
If negative terminal of the input supply is connected to p-side and –ve terminal is connected to
n-side then the diode is said to be reverse biased. In this condition an amount equal to reverse
biasing voltage increases the height of the potential barrier at the junction. Both the holes on P-
side and electrons on N-side tend to move away from the junction there by increasing the
depleted region. However the process cannot continue indefinitely, thus a small current called
reverse saturation current continues to flow in the diode. This current is negligible; the diode
can be approximated as an open circuited switch it offers a very high resistance called reverse
resistance(few Kiloohms).
Static Resistance: The opposition offered by a diode to the direct current flowing forward bias
condition is known as its DC forward resistance or Static Resistance. It is measured by taking the
ratio of DC voltage across the diode to the DC current flowing through it at an operating point.

Dynamic Resistance: The opposition offered by a diode to the changing current flow I
forward bias condition is known as its AC Forward Resistance. It is measured by a ratio of change
in voltage across the diode to the resulting change in current through it for an operating point P.
Average Resistance: Same as dynamic resistance but measured between extremities.
Diode current equation
The volt-ampere characteristics of a diode explained by the
following equations:

Where I = current flowing in the diode,I0 = reverse saturation current

V = voltage applied to the diode,
VT = volt- equivalent of temperature = k T/q = T/ 11,600 = 26mV
(@ room temp) =1 (for Ge) and 2 (for Si)

Circuit Diagram:

1 kohm 1 kohm
V
V

A A

Fig. 1: Forward Bias Condition Fig. 2: Reverse Bias Condition

Procedure: (a) Forward Bias Condition:

1. Connect the circuit as shown in Fig.1 (PN Junction diode with milli-ammeter in series
with the diode).
2. Initially vary Regulated Power Supply (RPS) voltage Vs in steps of 0.1 V. Once
the current starts increasing vary Vs in steps of 0.02V and note down the
corresponding readings Vf and If.
3. Tabulate different forward currents obtained for different forward voltages.
4. Plot the V-I characteristics and calculate the resistance levels

(b) Reverse Bias Condition:

1. Connect the circuit as shown in Fig.2 (Point contact diode in series with micro
ammeter).
2. Vary Vs in the Regulated Power Supply (RPS) gradually in steps of 1V from 0V to 12V
and note down the corresponding readings Vr and Ir.3. Tabulate different reverse
currents obtained for different reverse voltages.
4. Plot the V-I characteristics and calculate the resistance levels

Tabular column:
Forward bias (Germanium) Reverse bias (Germanium)
VD(volts) ID ( mA) Resistance VD(volts) ID ( µA) Resistance
(ohm) (ohm)
0.116 0.00424 27358.49 1 0.05 20,000,000
0.132 0.00797 16562.10 2 0.05 40,000,000
0.146 0.0138 10579 3 0.05 60,000,000
0.158 0.0218 7247.71 4 0.05 80,000,000
 0.160 0.032 5250 5 0.05 100,000,000
0.176 0.0438 4018.26 6 0.05 120,000,000
0.183 0.0569 3216.17 7 0.05 140,000,000
0.189 0.711 2658.23 8 0.05 160,000,000
0.194 0.0862 2250.58 9 0.05 180,000,000
0.198 0.102 1941.18 10 0.05 200,000,000

Forward bias (Silicon) Reverse bias (Silicon)

VD(volts) ID ( mA) Resistance VD(volts) ID ( µA) Resistance
(ohm) (ohm)
10.120 0 ∞ 1 0 ∞
0.140 0 ∞ 2 0 ∞
0.160 0 ∞ 3 0 ∞
0.180 0 ∞ 4 0 ∞
0.20 0 ∞ 5 0 ∞
0.220 0 ∞ 6 0 ∞
0.240 0 ∞ 7 0 ∞
0.260 0.000000198 1313131313 8 0 ∞
0.280 0.000000428 654205607.5 9 0 ∞
0.30 0.000000924 324675324.7 10 0 ∞

Graph for Voltage Drop in (V) for Forward-Biased Germanium Diode

0.25

0.2 0.2
0.19 0.19
0.18
0.18
0.17
VOLTAGE DROP (V)

0.16
0.15 0.15
0.13
0.12
0.1

0.05

0
0.12 0.14 0.16 0.18 0.2 0.22 0.24 0.26 0.28 0.3

CONTROLLED VOLTAGE SOURCE VALUE (V)

 Graph for Current Drop in (mA) for Forward-Biased Germanium
0.12

0.1 0.1

0.09
0.08
Current Drop (mA)

0.07

0.06
0.06

0.04
0.04
0.03

0.02 0.02
0.01
0.01
0
0
0.12 0.14 0.16 0.18 0.2 0.22 0.24 0.26 0.28 0.3

Controlled Voltage Source Value (V)

Graph for Resistance in (Ohms) for Forward-Biased Germanium Diode

30000

27358.49

25000

20000
Resistance (ohms)

16562.1
15000

10579.71
10000

7247.71
5000 5250
4018.26
3216.23 2658.23 2250.58 1941.18
0
0.12 0.13 0.15 0.16 0.17 0.18 0.18 0.19 0.19 0.2

Voltage Drop Value (V)

 Graph for Voltage Drop in (V) Reverse-Biased Germanium Diode
12

10 10

8 8
VOLTAGE DROP (V)

6 6

4 4

2 2

0
1 2 3 4 5 6 7 8 9 10

Controlled Voltage Source Value (V)

Graph for Current Drop in (V) Reverse-Biased Germanium Diode

0.06

0.05
0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05
Current Drop (mA)

0.04

0.03

0.02

0.01

0
1 2 3 4 5 6 7 8 9 10
Controlled Voltage Source Value (V)
 Graph for Resistance in (Ohms) for Reverse-Biased Germanium Diode
250000000

200000000 200000000
180000000
RESISTANCE (OHMS)

160000000
150000000
140000000
120000000
100000000 100000000
80000000
60000000
50000000
40000000
20000000
0
1 2 3 4 5 6 7 8 9 10

Voltage Drop Value (V)

Graph for Voltage Drop (V) for Forward-Biased Silicon Diode

0.35

0.3 0.3
0.28
0.26
0.25
0.24
0.22
voltade drop (v)

0.2 0.2
0.18
0.16
0.15
0.14
0.12
0.1

0.05

0
0.12 0.14 0.16 0.18 0.2 0.22 0.24 0.26 0.28 0.3

Controlled Voltage Source Value (V)

 Graph for Current Drop in (mA) for Forward-Biased Silicon Diode
700000000
654205607.5
600000000
Current Drop (milliAmpere)

500000000

400000000

300000000

200000000

100000000

00 0 0 0 0 0 0 0 0
0.12 0.14 0.16 0.18 0.2 0.22 0.24 0.26 0.28 0.3

Controlled Voltage Source Value (V)

Graph for Resistance in (Ohms) for Forward-Biased Silicon Diode

1400000000

1313131313

1200000000

1000000000
RESISTANCE (OHMS)

800000000

654205607.5
600000000

400000000

324675324.7

200000000

00 0 0 0 0 0 0
0.12 0.14 0.16 0.18 0.2 0.22 0.24 0.26 0.28 0.3

Voltage Drop Value (V)

 Graph for Voltage Drop (V) for Reverse-Biased Silicon Diode
12

10 10
9
8 8
voltade drop (v)

7
6 6
5
4 4
3
2 2
1
0
1 2 3 4 5 6 7 8 9 10

Controlled Voltage Source Value (V)

Graph for Current Drop (V) for Reverse-Biased Silicon Diode

1

0.9

0.8

0.7
Current Drop (milliAmpere)

0.6

0.5

0.4

0.3

0.2

0.1

00 0 0 0 0 0 0 0 0 0 0
1 2 3 4 5 6 7 8 9 10

Controlled Voltage Value (V)

 Graph for Resistance in (Ohms) for Reverse - Biased Silicon Diode
1

0.9

0.8

0.7
Resiatnce Value (Ohms)

0.6

0.5

0.4

0.3

0.2

0.1

00 0 0 0 0 0 0 0 0 0 0 0
1 2 3 4 5 6 7 8 9 10 ∞

Voltage Drop (V)

Ideal Characteristics

Forward Characteristics Reverse Characteristics

When a diode is connected in a Forward When a diode is connected in a Reverse
Bias condition, a negative voltage is applied to the Bias condition, a positive voltage is applied to the
N-type material and a positive voltage is applied N-type material and a negative voltage is applied
to the P-type material. If this external voltage to the P-type material.
becomes greater than the value of the potential
The positive voltage applied to the N-type
barrier, approx. 0.7 volts for silicon and 0.3 volts
material attracts electrons towards the positive
for germanium, the potential barriers opposition
electrode and away from the junction, while the
will be overcome and current will start to flow.
holes in the P-type end are also attracted away
This is because the negative voltage pushes or from the junction towards the negative electrode.
repels electrons towards the junction giving them
The net result is that the depletion layer grows
the energy to cross over and combine with the
wider due to a lack of electrons and holes and
holes being pushed in the opposite direction
presents a high impedance path, almost an
towards the junction by the positive voltage. This
insulator and a high potential barrier is created
results in a characteristics curve of zero current
across the junction thus preventing current from
flowing up to this voltage point, called the “knee”
flowing through the semiconductor material.
on the static curves and then a high current flow
through the diode with little increase in the
external voltage. Current flows from cathode to anode
Current flows from anode to cathode.
Calculations from Graph:
a) Forward Bias of PN Junction Diode:
Cut-in Voltage V =

Static forward Resistance

Dynamic Forward Resistance

Average Resistance ravg

= / pt to pt

b) Reverse Bias of Point contact diode:

Similarly find static and dynamic resistances

Result: Volt-Ampere Characteristics of P-N Diode are studied.

Application of Diode;
From my observation, the vastness of application of diodes is not only as a voltage-regulator
wherein it requires a certain amount of voltage for the current to spike. Widely used in modern
technology especially on sensitive devices, but also from the findings during the experiments. Also, it
is use for light emission – most commonly known use is the LED or light emitting diode wherein, it uses
the principle of doing emitting various frequencies or colors. And lastly as a power converter, as a
rectification of AC power to DC power. Using diodes, different types of rectifier circuits can be created,
the most basic of which are half wave, full wave center tapped, and full bridge rectifiers. These are
extremely important in electronics power supplies --- for example, a laptop’s charger --- where an AC
current, which comes from the mains power supply, must be converted to a DC current which can
then be stored.

Outcomes: Students are able to

1. Analyze the characteristics of PN diode.

2. Calculate the resistance in forward bias and reverse bias.