NPN 2N3773, PNP 2N6609 Complementary Silicon Power Transistors

NPN 2N3773*, PNP 2N6609
Preferred Device
Complementary Silicon
Power Transistors
The 2N3773 and 2N6609 are PowerBase power transistors
designed for high power audio, disk head positioners and other linear
applications. These devices can also be used in power switching
circuits such as relay or solenoid drivers, DC−DC converters or http://onsemi.com
inverters.
Features 16 A COMPLEMENTARY
• Pb−Free Packages are Available** POWER TRANSISTORS
• High Safe Operating Area (100% Tested) 150 W @ 100 V 140 V, 150 W
• Completely Characterized for Linear Operation
• High DC Current Gain and Low Saturation Voltage MARKING
hFE = 15 (Min) @ 8.0 A, 4.0 V DIAGRAM
VCE(sat) = 1.4 V (Max) @ IC = 8.0 A, IB = 0.8 A
• For Low Distortion Complementary Designs
2Nxxxx
MAXIMUM RATINGS (Note 1) MEX
AYYWW
Rating Symbol Value Unit TO−204
Collector − Emitter Voltage VCEO 140 Vdc CASE 1−07
Collector − Emitter Voltage VCEX 160 Vdc

Collector − Base Voltage VCBO 160 Vdc xxxx = 3773 or 6609
A = Assembly Location
Emitter − Base Voltage VEBO 7 Vdc YY = Year
Collector Current IC Adc WW = Work Week
− Continuous 16
− Peak (Note 2) 30
ORDERING INFORMATION
Base Current IB Adc
See detailed ordering and shipping information in the package
− Continuous 4 dimensions section on page 2 of this data sheet.
− Peak (Note 2) 15
Total Power Dissipation @ TA = 25°C PD 150 W
*Preferred devices are recommended choices for future
Derate above 25°C 0.855 W/°C
use and best overall value.
Operating and Storage Junction TJ, Tstg −65 to +200 °C
Temperature Range
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. Indicates JEDEC Registered Data.
2. Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, RJC 1.17 °C/W
Junction−to−Case
**For additional information on our Pb−Free strategy and soldering details,

please download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
 Semiconductor Components Industries, LLC, 2004 1 Publication Order Number:

July, 2004 − Rev. 10 2N3773/D
NPN 2N3773*, PNP 2N6609
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ Characteristic Symbol Min Max Unit
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎ
OFF CHARACTERISTICS (Note 3)
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
Collector−Emitter Breakdown Voltage (Note 4) VCEO(sus) 140 − Vdc
(IC = 0.2 Adc, IB = 0)
ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎ
Collector−Emitter Sustaining Voltage (Note 4)
ÎÎÎ
ÎÎÎ
(IC = 0.1 Adc, VBE(off) = 1.5 Vdc, RBE = 100 Ohms)
VCEX(sus) 160 − Vdc
ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎ
Collector−Emitter Sustaining Voltage
ÎÎÎ
ÎÎÎ
(IC = 0.2 Adc, RBE = 100 Ohms)
VCER(sus) 150 − Vdc
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
Collector Cutoff Current (Note 4) ICEO − 10 mAdc
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
(VCE = 120 Vdc, IB = 0)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
Collector Cutoff Current (Note 4) ICEX mAdc
(VCE = 140 Vdc, VBE(off) = 1.5 Vdc) − 2
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
(VCE = 140 Vdc, VBE(off) = 1.5 Vdc, TC = 150C) − 10
ÎÎÎÎ
Collector Cutoff Current
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ
(VCB = 140 Vdc, IE = 0) ÎÎÎ
ÎÎÎ
ÎÎÎ
ICBO − 2 mAdc
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
Emitter Cutoff Current (Note 4) IEBO − 5 mAdc
(VBE = 7 Vdc, IC = 0)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ON CHARACTERISTICS (Note 3)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
DC Current Gain hFE −
(IC = 8 Adc, VCE = 4 Vdc) (Note 4)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
15 60
(IC = 16 Adc, VCE = 4 Vdc) 5 −
ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎ
Collector−Emitter Saturation Voltage
ÎÎÎ
ÎÎÎ
(IC = 8 Adc, IB = 800 mAdc) (Note 4)
VCE(sat)
− 1.4
Vdc
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
(IC = 16 Adc, IB = 3.2 Adc) − 4
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
Base−Emitter On Voltage (Note 4) VBE(on) — 2.2 Vdc
(IC = 8 Adc, VCE = 4 Vdc)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
Magnitude of Common−Emitter |hfe| 4 − −
Small−Signal, Short−Circuit, Forward Current Transfer Ratio
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
(IC = 1 A, f = 50 kHz)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
Small−Signal Current Gain (Note 4)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
(IC = 1 Adc, VCE = 4 Vdc, f = 1 kHz)
hfe 40 − −
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
SECOND BREAKDOWN CHARACTERISTICS
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
Second Breakdown Collector Current with Base Forward Biased IS/b 1.5 − Adc
t = 1 s (non−repetitive), VCE = 100 V, See Figure 12
3. Pulse Test: Pulse Width = 300 s, Duty Cycle 2%.
4. Indicates JEDEC Registered Data.
ORDERING INFORMATION
Device Package Shipping†
2N3773 TO−204 100 Unit / Tray
2N3773G TO−204 100 Unit / Tray
(Pb−Free)
2N6609 TO−204 100 Unit / Tray

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifi-
cations Brochure, BRD8011/D.
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2
NPN 2N3773*, PNP 2N6609
NPN PNP
300 300
200 150°C 200 150°C
25°C
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN

100 100
−55 °C −55 °C
70 25°C 70
50 50
30 VCE = 4 V 30 VCE = 4 V
20 20
10 10
7.0 7.0
5.0 5.0
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
Figure 1. DC Current Gain Figure 2. DC Current Gain

VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)

2.0 2.0
IC = 4 A IC = 4 A
1.6 1.6 IC = 16 A
1.2 1.2
IC = 8 A
IC = 8 A
IC = 16 A
0.8 0.8
0.4 0.4
TC = 25°C TC = 25°C
0 0
0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0
IB, BASE CURRENT (AMPS) IB, BASE CURRENT (AMPS)
Figure 3. Collector Saturation Region Figure 4. Collector Saturation Region
2.0 2.0
IC/IB = 10 IC/IB = 10
1.6 1.6
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
1.2 1.2 VBE(sat)

VBE(sat)
0.8 25°C 0.8 25°C
150°C 150°C
150°C
0.4 150°C 0.4 25°C
VCE(sat) 25°C
VCE(sat)
0
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
Figure 5. “On” Voltage Figure 6. “On” Voltage
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3
NPN 2N3773*, PNP 2N6609
30
20 10 s
40 s
IC, COLLECTOR CURRENT (AMP)

10
100 s
5.0 dc 200 s
3.0 1.0 ms
2.0
100 ms
1.0
0.5
500 ms
0.3 BONDING WIRE LIMIT
0.2 THERMAL LIMIT
@ TC = 25°C, SINGLE PULSE
0.1
SECOND BREAKDOWN LIMIT
0.05
0.03
3.0 5.0 7.0 10 20 30 50 70 100 200 300
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 7. Forward Bias Safe Operating Area
There are two limitations on the power handling ability of The data of Figure 7 is based on TJ(pk) = 200C; TC is
a transistor: average junction temperature and second variable depending on conditions. Second breakdown pulse
breakdown. Safe operating area curves indicate IC − VCE limits are valid for duty cycles to 10% provided TJ(pk)
limits of the transistor that must be observed for reliable < 200C. At high case temperatures, thermal limitations
operation: i.e., the transistor must not be subjected to greater will reduce the power that can be handled to values less than
dissipation than the curves indicate. the limitations imposed by second breakdown.
100
POWER DERATING FACTOR (%)
80
60
THERMAL
40 DERATING
20
0
0 40 80 120 160 200
TC, CASE TEMPERATURE (°C)
Figure 8. Power Derating
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4
NPN 2N3773*, PNP 2N6609
PACKAGE DIMENSIONS
TO−204 (TO−3)
CASE 1−07
ISSUE Z
NOTES:
A 1. DIMENSIONING AND TOLERANCING PER ANSI
N Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C 3. ALL RULES AND NOTES ASSOCIATED WITH
−T− SEATING REFERENCED TO−204AA OUTLINE SHALL APPLY.
PLANE
E INCHES MILLIMETERS
D 2 PL K DIM MIN MAX MIN MAX
A 1.550 REF 39.37 REF
0.13 (0.005) M T Q M Y M B −−− 1.050 −−− 26.67
C 0.250 0.335 6.35 8.51
U D 0.038 0.043 0.97 1.09
L −Y−
V E 0.055 0.070 1.40 1.77
G 0.430 BSC 10.92 BSC
2 H 0.215 BSC 5.46 BSC
G B K 0.440 0.480 11.18 12.19
H 1 L 0.665 BSC 16.89 BSC
N −−− 0.830 −−− 21.08
Q 0.151 0.165 3.84 4.19
−Q− U 1.187 BSC 30.15 BSC
V 0.131 0.188 3.33 4.77
0.13 (0.005) M T Y M
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
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5
NPN 2N3773*, PNP 2N6609
PowerBase is a registered trademark of Semiconductor Components Industries, LLC (SCILLC).
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: http://onsemi.com
Literature Distribution Center for ON Semiconductor USA/Canada
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Order Literature: http://www.onsemi.com/litorder
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Email: orderlit@onsemi.com Phone: 81−3−5773−3850 local Sales Representative.
http://onsemi.com 2N3773/D
6
This datasheet has been download from:
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Datasheets for electronics components.

NPN 2N3773, PNP 2N6609 Complementary Silicon Power Transistors

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NPN 2N3773*, PNP 2N6609

Collector − Emitter Voltage VCEX 160 Vdc

**For additional information on our Pb−Free strategy and soldering details,

 Semiconductor Components Industries, LLC, 2004 1 Publication Order Number:

2N6609 TO−204 100 Unit / Tray

hFE , DC CURRENT GAIN

Figure 1. DC Current Gain Figure 2. DC Current Gain

VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)

Figure 3. Collector Saturation Region Figure 4. Collector Saturation Region

1.2 1.2 VBE(sat)

Figure 5. “On” Voltage Figure 6. “On” Voltage

IC, COLLECTOR CURRENT (AMP)

Figure 7. Forward Bias Safe Operating Area

Figure 8. Power Derating

PowerBase is a registered trademark of Semiconductor Components Industries, LLC (SCILLC).

PUBLICATION ORDERING INFORMATION

Datasheets for electronics components.

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