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PD- 91380B

IRLL2705
HEXFET® Power MOSFET
l Surface Mount
l Dynamic dv/dt Rating D
VDSS = 55V
l Logic-Level Gate Drive
l Fast Switching
RDS(on) = 0.04Ω
l Ease of Paralleling
G
l Advanced Process Technology
l Ultra Low On-Resistance
ID = 3.8A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.

The SOT-223 package is designed for surface-mount


using vapor phase, infra red, or wave soldering techniques.
Its unique package design allows for easy automatic pick- S O T -22 3
and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1.0W is possible in a typical surface mount application
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V** 5.2
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V* 3.8
A
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V* 3.0
IDM Pulsed Drain Current  30
PD @TA = 25°C Power Dissipation (PCB Mount)** 2.1 W
PD @TA = 25°C Power Dissipation (PCB Mount)* 1.0 W
Linear Derating Factor (PCB Mount)* 8.3 mW/°C
VGS Gate-to-Source Voltage ± 16 V
EAS Single Pulse Avalanche Energy‚ 110 mJ
IAR Avalanche Current 3.8 A
EAR Repetitive Avalanche Energy 0.10 mJ
dv/dt Peak Diode Recovery dv/dt ƒ 7.5 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Typ. Max. Units
RθJA Junction-to-Amb. (PCB Mount, steady state)* 93 120
°C/W
RθJA Junction-to-Amb. (PCB Mount, steady state)** 48 60
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
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IRLL2705
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V V GS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.061 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.040 VGS = 10V, ID = 3.8A „
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.051 Ω VGS = 5.0V, ID = 3.8A „
––– ––– 0.065 VGS = 4.0V, ID = 1.9A „
VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V VDS = V GS, ID = 250µA
gfs Forward Transconductance 5.1 ––– ––– S V DS = 25V, ID = 1.9A
––– ––– 25 µA VDS = 55V, VGS = 0V
IDSS Drain-to-Source Leakage Current
––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 16V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V
Qg Total Gate Charge ––– 32 48 ID = 3.8A
Qgs Gate-to-Source Charge ––– 3.5 5.3 nC VDS = 44V
Qgd Gate-to-Drain ("Miller") Charge ––– 9.7 14 VGS = 10V, See Fig. 6 and 9 „
td(on) Turn-On Delay Time ––– 6.2 ––– VDD = 28V
tr Rise Time ––– 12 ––– ID = 3.8A
ns
td(off) Turn-Off Delay Time ––– 35 ––– RG = 6.2Ω
tf Fall Time ––– 22 ––– RD = 7.1Ω, See Fig. 10 „
Ciss Input Capacitance ––– 870 ––– VGS = 0V
Coss Output Capacitance ––– 220 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 92 ––– ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics


Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol
––– ––– 0.91
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse
––– ––– 30
(Body Diode)  p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 3.8A, VGS = 0V „
trr Reverse Recovery Time ––– 58 88 ns TJ = 25°C, I F = 3.8A
Qrr Reverse RecoveryCharge ––– 140 210 nC di/dt = 100A/µs „
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
 Repetitive rating; pulse width limited by ƒ ISD ≤ 3.8A, di/dt ≤ 220A/µs, VDD ≤ V(BR)DSS,
max. junction temperature. ( See fig. 11 ) TJ ≤ 150°C
‚ VDD = 25V, starting TJ = 25°C, L = 15mH „ Pulse width ≤ 300µs; duty cycle ≤ 2%.
RG = 25Ω, I AS = 3.8A. (See Figure 12)

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IRLL2705

100 100
VGS VGS
TOP 15V TOP 15V
10V 10V
7.0V 7.0V
5.5V 5.5V
4.5V 4.5V
I D , D rain-to-Source C urrent (A)

I D, D rain-to-S ource C u rrent (A)


4.0V 4.0V
3.5V 3.5V
BOTTOM 3.0V BOTTOM 3.0V

10 10

3 .0V
3 .0 V

2 0µ s P U L S E W ID T H 2 0µ s P U L S E W ID TH
TJ = 25 °C A TJ = 15 0°C
1 1 A
0.1 1 10 100 0.1 1 10 100
V DS , D rain-to-S ource V oltage (V ) V D S , D rain-to-S ource V oltage (V )

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

100 2.0
I D = 3.8 A
R D S (on) , D ra in-to -S o urc e O n R e s is ta nc e
I D , D rain-to-So urce C urren t (A )

1.5
TJ = 2 5 °C

TJ = 1 50 °C
(N o rm alize d)

10 1.0

0.5

V DS = 25V
2 0 µ s P UL S E W ID TH V G S = 1 0V
1 0.0 A
A
3.0 3.5 4.0 4.5 5.0 -60 -40 -20 0 20 40 60 80 100 120 140 160

V G S , G ate-to -So urce Voltag e (V) T J , J unc tion T em perature (°C )

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance


Vs. Temperature
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IRLL2705

1400 20
V GS = 0V , f = 1M H z I D = 3.8 A
C is s = C g s + C g d , Cd s S H O R T E D V D S = 4 4V

V G S , G ate-to-Source V oltage (V )
1200 C rs s = C gd V D S = 2 8V
C iss C o ss = C d s + C gd 16
C , Capacitance (pF)

1000

12
800

C oss
600
8

400

C rss 4
200
F O R TE S T C IR C U IT
S E E F IG U R E 9
0 A 0 A
1 10 100 0 10 20 30 40 50
V D S , D rain-to-S ourc e V oltage (V ) Q G , T otal G ate C harge (nC )

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.


Drain-to-Source Voltage Gate-to-Source Voltage

100 100
O P E R A T IO N IN T H IS A R E A L IM ITE D
B Y R D S (o n)
I S D , Reverse D rain C urrent (A)

10µ s
I D , D rain Current (A )

10
TJ = 1 50 °C 100µ s

10
TJ = 25 °C 1m s

1
10m s

T A = 25 °C
T J = 15 0°C
V G S = 0V S ing le P u lse
1 A 0.1 A
0.4 0.6 0.8 1.0 1.2 1.4 0.1 1 10 100
V S D , S ourc e-to-D rain V oltage (V ) V D S , D rain-to-S ource V oltage (V )

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area


Forward Voltage
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IRLL2705

RD
QG VDS

VGS
10V QGS QGD D.U.T.
RG
+
- VDD
VG
10V
Pulse Width ≤ 1 µs
Charge Duty Factor ≤ 0.1 %

Fig 9a. Basic Gate Charge Waveform Fig 10a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
VDS
50KΩ 90%
12V .2µF
.3µF

+
V
D.U.T. - DS
10%
VGS VGS
3mA td(on) tr t d(off) tf

IG ID
Current Sampling Resistors

Fig 9b. Gate Charge Test Circuit Fig 10b. Switching Time Waveforms
1000
Therm al R esponse (Z thJA )

100
D = 0 .5 0

0 .2 0

10 0 .1 0
0 .0 5

0 .0 2
0 .0 1
1 PD M

t
1
S IN G L E P U L S E t2
0.1
(T H E R M A L R E S P O N S E )
N o te s:
1 . D u ty fa c to r D = t / t
1 2
2. P e a k TJ = P D M x Z th J A + T A
0.01 A
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 10000

t 1 , R e c ta n g u la r P u ls e D u ra tio n (s e c )

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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IRLL2705

250
ID

E A S , S ingle P ulse A valanche E nergy (m J)


TO P 1.7 A
3.0A
1 5V
200 B O TTO M 3 .8 A

L D R IV E R
VD S 150

RG D .U .T +
- VD D 100
IA S A
20V
tp 0 .01 Ω
50

Fig 12a. Unclamped Inductive Test Circuit


V D D = 25 V
0 A
25 50 75 100 125 150
V (B R )D SS S tarting T J , J unc tion T em perature (°C )
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current

IAS

Fig 12b. Unclamped Inductive Waveforms

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IRLL2705

Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations


D.U.T
• Low Stray Inductance
• Ground Plane
ƒ
• Low Leakage Inductance
Current Transformer
-

+
‚
„
- +
-


RG • dv/dt controlled by RG +
• Driver same type as D.U.T. VDD
-
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test

Driver Gate Drive


P.W.
Period D=
P.W. Period

VGS=10V *

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD

Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices


Fig 13. For N-Channel HEXFETS

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IRLL2705
Package Outline
SOT-223 (TO-261AA) Outline

Part Marking Information


SOT-223 E X A M P L E : T H IS IS A N IR FL 0 14

W A FER
P A R T NU M B E R LO T CO D E
F L0 14
XXXXXX
IN TE RN A TIO NA L 31 4
RE CT IF IE R D A TE CO D E (Y W W )
LO G O Y = LA S T D IG IT O F TH E Y E A R
TOP W W = W E EK B O TT O M

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IRLL2705
Tape & Reel Information
SOT-223 Outline

4 .1 0 (.1 6 1) 0 .3 5 (.0 1 3 )
3 .9 0 (.1 5 4) 1 .8 5 (.0 7 2 )
2 .0 5 (.0 8 0 ) 1 .6 5 (.0 6 5 ) 0 .2 5 (.0 1 0 )

TR 1 .9 5 (.0 7 7 )

7 .5 5 (.2 9 7 )
7 .4 5 (.2 9 4 )
1 6 .3 0 (.6 4 1 )
7 .6 0 (.2 9 9 ) 1 5 .7 0 (.6 1 9 )
7 .4 0 (.2 9 2 )

1 .6 0 (.0 6 2 )
1 .5 0 (.0 5 9 )
TYP .
F E E D D IR E C T IO N
7 .1 0 (.2 79 ) 2 .3 0 (.0 9 0 )
6 .9 0 (.2 72 ) 2 .1 0 (.0 8 3 )
1 2 .1 0 (.4 7 5 )
1 1 .9 0 (.4 6 9 )

NOTES :
1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
2 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 41 .
3 . E A C H O 3 3 0 .0 0 (1 3 .0 0 ) R E E L C O N T A IN S 2,50 0 D E V IC E S .

1 3 .2 0 (.5 1 9 ) 1 5.40 (.6 0 7 )


1 2 .8 0 (.5 0 4 ) 1 1.90 (.4 6 9 )

330.0 0 5 0.0 0 (1 .9 6 9 )
(13.000) M IN .
M AX.

1 8 .4 0 (.7 2 4 )
N O T ES :
M AX .
1 . O U T LIN E C O M F O R M S T O E IA -4 1 8 -1 .
2 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .. 1 4 .4 0 (.5 6 6 ) 4
3 . D IM E N S IO N M E A S U R E D @ H U B . 1 2 .4 0 (.4 8 8 )
4 . IN C L U D E S F L A N G E D IS T O R T IO N @ O U T E R E D G E . 3

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http://www.irf.com/ Data and specifications subject to change without notice. 1/99
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