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DATA SHEET
BFQ225
NPN video transistor
Product specification 1996 Sep 04
Supersedes data of 1996 July 18
File under Discrete Semiconductors, SC05
Philips Semiconductors Product specification
APPLICATIONS
• Primarily intended for cascode handbook, halfpage
output and buffer stages in high
resolution colour monitors.
DESCRIPTION
NPN silicon transistor encapsulated
in a 3-lead plastic SOT128B package.
PINNING
PIN DESCRIPTION
1 emitter 1 2 3
MGA323
2 collector
3 base
Fig.1 Simplified outline SOT128B.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter − 100 V
VCER collector-emitter voltage RBE = 100 Ω − 95 V
VEBO emitter-base voltage open collector − 3 V
IC collector current (DC) see Fig.2 − 100 mA
IC(AV) average collector current see Fig.2 − 100 mA
Ptot total power dissipation Tmb = 25 °C; see Fig.3 − 3.75 W
Tstg storage temperature −65 +175 °C
Tj junction temperature − 175 °C
1996 Sep 04 2
Philips Semiconductors Product specification
MBG486 MBG487
103 4
handbook, halfpage handbook, halfpage
Ptot
(W)
IC
(mA) 3
102 2
10 0
10 102 VCE (V) 103 0 100 Tmb (oC) 200
THERMAL CHARACTERISTICS
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
1996 Sep 04 3
Philips Semiconductors Product specification
MBG488 MBG489
60 1.2
handbook, halfpage handbook, halfpage
fT
hFE
(MHz)
40 0.8
20 0.4
0 0
0 20 40 60 80 100 10 20 50
IC (mA) 102
IC (mA)
MBG490
4
handbook, halfpage
Cre
(pF)
0
0 2 4 6 8 10
VCB (V)
f = 1 MHz.
1996 Sep 04 4
Philips Semiconductors Product specification
PACKAGE OUTLINE
10.4 max
handbook, full pagewidth
3.8 0.56 max
3.6
3.8
24.2
max
8.6
max
12.2
min
1 2 3
0.8 (3x)
0.6 0.65 max
2.54 2.54 1.6
4.6
max
10 MGA322
Dimensions in mm.
Fig.7 SOT128B.
1996 Sep 04 5
Philips Semiconductors Product specification
DEFINITIONS
1996 Sep 04 6
This datasheet has been download from:
www.datasheetcatalog.com