, LJnc.

20 STERN AVE. TELEPHONE: (973) 376-2922

SPRINGFIELD, NEW JERSEY 07081 (212)227-6005
U.S.A. FAX: (973) 376-8960

2N3375
2N3632/2N3733
RF & MICROWAVE TRANSISTORS
VHF-UHF CLASS C WIDE BAND

FREQUENCY 130 TO 400MHz

VOLTAGE 28V
POWER OUT 2.5TO13.5W
HIGH POWER GAIN
HIGH EFFICIENCY
CLASS C TRANSISTORS
COMMON EMITTER

TO 60

PIN CONNECTION

BRANDING
2N3373
2N3632
2N3733

DESCRIPTION
3W2NM7S-OI This line of silicon epitaxial NPN planar high fre-
quency transistors employs a rnuW emitter electrode
design. This feature together with a heavily diffused
1 Hiliittor 3 collector
base matrix located between the individual emitters
2 bast results In high RF current handling capability, high
power gain, low base resistance and low output ca-
pacitance. These transistors are intended for Class
A, B, or C amplifier, oscillator or frequency multiplier
circuits and are specifically designed for operation
in the VHF-UHF region.

Device Package
2N3375 TO 60
2N3632 TO 80
2N3733 TO 60

NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
not.ce information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of eoino to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use NJ
Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
 2N3375/2N3632/2N3733

ABSOLUTE MAXIMUM RATINGS (Te.,» - 25°C)

Symbol Paramotar 2N3375 2N3632 2N3733 Unit
VCBO Collector to BaM Voltage as 65 65 V
VCEO Coeector to Emitter Voltage 40 40 40 V
VflO EmltMrtoBaMVottagt 4.0 4.0 4.0 V
Ic (m«i) Contlnuoue Collector Currant 14 3.0 3.0 A
PO Total Dlaatpatlon at 25'C Stud 11.6 23.0 23.0 V
T| Junction Temperature 200 200 200 °c
T,M Storage Temperature - 6S tO 150 -6510150 -65 to 150 "C

1 2N3375 2N3632 | 2N3733

Aihu.ci | Junction-case Thermal R«l«ance 15.0 7.6
1 7-

ELECTRICAL CHARACTBRISTICS = 25°C)

STATIC
2N337S 2N3632 2N3733
Symbol Taat Condltkn* Unit
Mlrt. T»P Max. Uln. Typ. Max. Mln. Typ. Max.
BV«o lc - 0.5mA VBB-O 65 66 65 V
BVceo lc -200mA IB.0 40 40 40 V
BV6Bo It -0.25mA | c .O 4 (I6 -0.1mA; 4 4 V
ICEO Vca-30V U-0 0.1 0.25 0.25 mA
H« VCf -5V lc - 250mA 10 5 (Ic- 10
)A)

DYNAMIC
2N337I 2N3C32 2N3733
Symba Taat Conditions UnH
Mln. Typ. Max. Mln. TV?
Mai. Mln. Typ. Max.
Po F» 17SMHZ V ce .28V 13.5 W
»
ClaeaC
Po F - 400MHz VCc - 28V 3 10 W
Qc F- 175MH> V CC -28V 5.8 dB
Op F - 400MHz Vnc - 28V 48 4.0 OB
1C F. 175MHz V C c-2BV 70 %
in f . 400MHz VCR . 28V 40 46 %
COB F.1MHZ V c t .30V 10 20 20 pF