CM100TJ-24F

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Trench Gate Design
Six IGBTMOD™
100 Amperes/1200 Volts

A
D
E U
F G H
NOT NOT
CONNECTED CONNECTED
19 17

18 16 15

20 14

B J Tc
M K
N
S
21 13 Tc

L L
T
Description:
Powerex IGBTMOD™ Modules
1 2 3 4 5 6 7 8 9 10 11 12
are designed for use in switching
P R
Q
applications. Each module consists
of six IGBT Transistors in a three
Y
X phase bridge configuration, with
each transistor having a reverse-
V W connected super-fast recovery
C free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
21 13
offering simplified system assembly
1 5 9 and thermal management.
2 6 10
Features:
□ Low Drive Power
3 7 11
□ Low VCE(sat)
4 8 12 □ Discrete Super-Fast Recovery
20 14 Free-Wheel Diode
□ Isolated Baseplate for Easy
19 17 15
Heat Sinking
Outline Drawing and Circuit Diagram Applications:
□ AC Motor Control
Dimensions Inches Millimeters Dimensions Inches Millimeters □ UPS
A 4.78 121.5 M 0.15 3.81 □ Battery Powered Supplies
B 2.42 61.5 N 0.75 19.05 Ordering Information:
C 0.67 17.0 P 0.15 3.81 Example: Select the complete
D 4.33±0.01 110.0±0.25 Q 3.00 76.2 module number you desire from
E 3.00 76.2 R 0.60 15.24 the table - i.e. CM100TJ-24F is a
F 0.75 19.05 S 0.45 1.15
1200V (VCES), 100 Ampere Six-
IGBT IGBTMOD™ Power Module.
G 0.60 15.24 T 0.04 1.0
H 0.15 3.81 U 0.22 Dia. 5.5 Dia. Current Rating VCES
Type Amperes Volts (x 50)
J 2.26 57.5 V 0.12 3.0
CM 100 24
K 1.97±0.01 50.0±0.25 W 0.81 20.5
L 1.07 27.0 X 3.72 94.5
Y 4.62 118.11

1
 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272

CM100TJ-24F
Trench Gate Design Six IGBTMOD™
100 Amperes/1200 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM100TJ-24F Units
Junction Temperature Tj -40 to 150 °C
Storage Temperature Tstg -40 to 125 °C
Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts
Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts
Collector Current (Tc = 25°C) IC 100 Amperes
Peak Collector Current (Tj ≤ 150°C) ICM 200* Amperes
Emitter Current (Tc = 25°C)** IE 100 Amperes
Peak Emitter Current** IEM 200* Amperes
Maximum Collector Dissipation (Tj < 150°C) (Tc = 25°C) Pc 390 Watts
Mounting Torque, M5 Mounting – 31 in-lb
Weight – 300 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Volts

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1 mA
Gate Leakage Current IGES VGE = VGES, VCE = 0V – – 20 µA
Gate-Emitter Threshold Voltage VGE(th) IC = 10mA, VCE = 10V 5 6 7 Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 100A, VGE = 15V, Tj = 25°C – 1.8 2.4 Volts
IC = 100A, VGE = 15V, Tj = 125°C – 1.9 – Volts
Total Gate Charge QG VCC = 600V, IC = 100A, VGE = 15V – 1100 – nC
Emitter-Collector Voltage** VEC IE = 100A, VGE = 0V – – 3.3 Volts
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

2
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272

CM100TJ-24F
Trench Gate Design Six IGBTMOD™
100 Amperes/1200 Volts

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance Cies – – 39 nf
Output Capacitance Coes VCE = 10V, VGE = 0V, f = 1MHz – – 1.7 nf
Reverse Transfer Capacitance Cres – – 1.6 nf
Inductive Turn-on Delay Time td(on) VCC = 600V, – – 100 ns
Load Rise Time tr IC = 100A, – – 50 ns
Switch Turn-off Delay Time td(off) VGE1 = VGE2 = 15V, – – 400 ns
Times Fall Time tf RG = 3.1⍀, – – 300 ns
Diode Reverse Recovery Time** trr Inductive Load – – 150 ns
Diode Reverse Recovery Charge** Qrr Switching Operation – 4.1 – µC

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT 1/6 Module, Tc Reference – – 0.32 °C/W
Point per Outline Drawing
Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/6 Module, Tc Reference – – 0.36 °C/W
Point per Outline drawing
Thermal Resistance, Junction to Case Rth(j-c)'Q Per IGBT 1/6 Module, – 0.18 – °C/W
Tc Reference Point Under Chip
Thermal Resistance, Junction to Case Rth(j-c)'D Per FWDi 1/6 Module, Tc Reference – 0.20 – °C/W
Tc Reference Point Under Chip
Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied – 0.13 – °C/W
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

3
 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272

CM100TJ-24F
Trench Gate Design Six IGBTMOD™
100 Amperes/1200 Volts

COLLECTOR-EMITTER COLLECTOR-EMITTER
OUTPUT CHARACTERISTICS SATURATION VOLTAGE CHARACTERISTICS SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL) (TYPICAL) (TYPICAL)
200 3.0 5
15
Tj = 25oC 11 VGE = 15V Tj = 25°C

SATURATION VOLTAGE, VCE(sat), (VOLTS)

SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)

VGE = 20V 10 Tj = 25°C

160 2.5
9.5 Tj = 125°C 4

COLLECTOR-EMITTER
COLLECTOR-EMITTER
9
2.0
120 3
1.5 IC = 200A
8.5 IC = 100A
80 2
1.0
IC = 40A
40 8 1
0.5

0 0 0
0 1 2 3 4 0 40 80 120 160 200 0 4 8 12 16 20
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS)

FREE-WHEEL DIODE HALF-BRIDGE

FORWARD CHARACTERISTICS CAPACITANCE VS. VCE SWITCHING CHARACTERISTICS
(TYPICAL) (TYPICAL) (TYPICAL)
103 102 103
Tj = 25°C VGE = 0V
tf
Cies
CAPACITANCE, Cies, Coes, Cres, (nF)
EMITTER CURRENT, IE, (AMPERES)

td(off)

102 101 SWITCHING TIME, (ns) 102

td(on)

tr

101 100 Coes 101 VCC = 600V

VGE = ±15V
Cres RG = 3.1 Ω
Tj = 125°C
Inductive Load
100 10-1 100
0 1.0 2.0 3.0 4.0 10-1 100 101 102 101 102 103
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES)

TRANSIENT THERMAL
REVERSE RECOVERY CHARACTERISTICS IMPEDANCE CHARACTERISTICS
(TYPICAL) GATE CHARGE, VGE (IGBT & FWDi)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)

10-3 10-2 10-1 100 101

103 102 20 101
REVERSE RECOVERY CURRENT, Irr, (AMPERES)

VCC = 600V IC = 100A Rth(j-c) = 0.32°C/W (IGBT)

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

VGE = ±15V Under Chip = 0.18°C/W

REVERSE RECOVERY TIME, trr, (ns)

Zth = Rth • (NORMALIZED VALUE)

RG = 3.1 Ω 16 Rth(j-c) = 0.36°C/W (FWDi)

Tj = 25°C 100
Inductive Load
12 VCC = 600V
VCC = 400V
102 Irr 101 10-1 10-1

trr 8

10-2 10-2
4 Per Unit Base
Single Pulse
TC = 25°C
101 100 0 10-3 10-3
100 101 102 0 500 1000 1500 10-5 10-4 10-3
EMITTER CURRENT, IE, (AMPERES) GATE CHARGE, QG, (nC)
TIME, (s)