DECEMBER 24, 2020

Diode & Zener diode

Characteristics
BY
Yacine Khalid Waleed
Yahya Waleed Qassim

University of Mosul
 ‫جامعة الموصل‬
‫كلية الهندسة‬
‫قسم الكهرباء‬

‫دراسة خواص ثنائي الوصلة‬

‫\‬

‫التقرير مقدم كجزء من متطلبات مادة مختبر‬

‫( الهندسة الهربائية ‪) 1‬‬

‫للمستوى الثاني ‪ /‬الكترونيك و اتصاالت‬

‫في قسم الهندسة الكهربائية‬

‫التقرير مقدم من‬

‫ياسين خالد وليد‬
‫يحيى وليد قاسم‬

‫باشراف االساتذة‬
‫أ ‪ .‬احمد عبد الجبار اسماعيل‬
‫أ ‪.‬كهالن حسان حميد‬

‫‪Page | 1‬‬ ‫‪Diode & Zener diode Characteristics‬‬

 Part 1: Diode characteristics
Introductions

• Purpose
1. Study and drawing of diode characteristics for forward and reverse bias.
2. Finding the static & dynamic resistance for diode.

• Theory
Diode is a two-terminal semiconductor device formed by two doped regions of silicon separated
by a pn junction, and the electrical symbol of diode is shown in fig(). Diode is made from a
small piece of semiconductor material, usually silicon, in which half is doped as a p region and
half is doped as an n region with a pn junction and depletion region in between. The p region is
called the anode and is connected to a conductive terminal. The n region is called the cathode
and is connected to a second conductive terminal. The basic diode structure and schematic
symbol are shown in Figure

Figure 1.1 Basic structure of diode

Figure 1.0 the diode symbol

A diode is a two-lead semiconductor device that acts as a one- way gate to electric current flow.
When a diode’s anode lead is made more positive in voltage than its cathode lead—a condition
referred to as forward biasing—current is permitted to flow through the device. However, if the
polarities are reversed (the anode is made more negative in voltage than the cathode)—a
condition referred to as reversed biasing—the diode acts to block current flow. [1]

Figure 1.2 Figure 1.3

Forward Reverse
biasing biasing
voltage voltage

• Hypothesis
The diode is assumed to allow current to flow in forward bias only after the depletion region
voltage has overcome and in reverse bias that does not allow current to flow until it has reached
breakdown.

Page | 2 Diode & Zener diode Characteristics

Materials and Methods

• Required Parts and Equipment's

1. Variable dc voltage source. 4. Ammeter.
2. Resistor with 470 Ω. 5. Voltmeter.
3. Diode.

• Procedure
1. Using the Avometer, check the diodes and determine their suitability for work.
2. Connect the circuit shown in Figure (l), the power supply is set to zero volts.
3. Measure and record the diode current values for different values of the diode voltage
reading from 0.2 to 0.7 at an interval of 0.05, as shown in the table.
4. Invert the connection of the source voltages as in the figure and Measure and record the
diode current values for different values of the diode voltage reading from 0.2 to 0.7 at an
interval of 0.05, as shown in the table.

Figure 1.4 Diode in forward bias

Figure 1.5 Diode in reverse bias

Page | 3 Diode & Zener diode Characteristics

Results in laboratory

• Diode in forward bias

VD (V) ID (A) V-I of diode in foward bias

0.2 0.05 µA 0.04

0.25 0.25 µA 0.035

0.03
0.3 0.9 µA

ID (mA)
0.025
0.35 3.45 µA 0.02
0.4 12.6 µA 0.015
0.01
0.45 45.1 µA
0.005
0.5 139.5 µA 0
0.55 0.305 mA 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7 0.75

0.6 1.250 mA VD (V)

0.65 3.5 mA
Graph 1
0.7 10.40 mA
0.75 35.5 mA
Table 1

• Diode in reverse bias

V-I of diode in reverse bias

0
-30 -25 -20 -15 -10 -5 0
-5E-07
VD (V) ID (µA)
-0.000001
-5 -0.5 µA
ID (mA)

-10 -1.02 µA • -1.5E-06

-15 -1.5 µA -0.000002

-20 -2.04 µA -2.5E-06

-25 -2.54 µA
-0.000003
Table 1.1 VD (V)
Graph 1.1

Page | 4 Diode Characteristics

Results in Multisim

• Diode in forward bias

VD (V) ID (A) V-I of diode in foward bias
0.2 1.5 µA 0.07
0.25 4.1 µA 0.06
0.3 10 µA 0.05

ID (mA)
0.35 28 µA 0.04
0.4 74 µA 0.03
0.45 192 µA 0.02
0.5 505 µA 0.01
0.55 1 mA 0
0.6 3 mA 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7 0.75

0.65 9 mA VD (V)
0.7 23 mA
Graph 1.2
0.75 60 mA
Table 1.2

• Diode in reverse bias

V-I of diode in reverse bias

0
-30 -25 -20 -15 -10 -5 0
VD (V) ID (µA)
-1E-08
-5 -0.03 µA
-2E-08
ID (mA)

-10 -0.041µA
-3E-08
-15 -0.047µA
-20 -0.051 µA -4E-08

-25 -0.056 µA -5E-08

Table 1.3 -6E-08

VD (V)

Graph 1.3

Page | 5 Diode Characteristics

 Part 2: Zener diode characteristics
Introductions

• Purpose
3. Study and drawing of Zener diode characteristics for forward and reverse bias.
4. Finding the resistance for Zener diode at breakdown.

• Theory
Zener diode is a silicon pn junction device that is designed for operation in the reverse
breakdown region. The breakdown voltage of a Zener diode is set by carefully controlling the
doping level during manufacture.
A zener diode acts like a two- way gate to current flow. In the forward direction,
it’s easy to push open; only about 0.6 V—just like a standard diode. In the reverse
direction, it’s harder to push open; it requires a voltage equal to the zener’s breakdown
voltage VZ. This breakdown voltage can be anywhere between 1.8 and 200 V, depending
on the model (1N5225B =3.0 V, 1N4733A =5.1 V, 1N4739A =9.1 V, etc.). Power
ratings vary from around 0.25 to 50 W. [2]

Figure 2 The reverse- bias direction is the standard configuration used in most applications, along with a series
resistor. In this configuration, the zener diode acts like a pressure release value, passing as much current as necessary to
keep the voltage across it constant, equal to VZ. In other words, it can act as a voltage regulator.

• Hypothesis
The Zener diode is assumed to allow current to flow in forward bias only after the depletion
region voltage has overcome and in reverse bias allow current to flow after the depletion region
voltage has overcome.

Page | 6 Diode Characteristics

Materials and Methods

• Required Parts and Equipment's

1. Variable dc voltage source. 4. Ammeter.
2. Resistor with 470 Ω. 5. Voltmeter.
3. Diode.

• Procedure
1. Using the Avometer, check the Zener and determine their suitability for work.
2. Connect the circuit shown in Figure (l), the power supply is set to zero volts.
3. Measure and record the diode current values for different values of the Zener voltage
reading from 0.2 to 0.7 at an interval of 0.05, as shown in the table
4. Invert the connection of the source voltages as in the figure and Measure and record the
Zener current values & Zener voltage values, the values the voltage applied to the diode
start from 0 to 2 and supplies from dc power supply and according to the table.

Figure 2.1 Zener in forward bias

Figure 2.2 Zener in reverse bias

Page | 7 Diode Characteristics

Results in laboratory

• Zener diode in forward bias

Vz (V) Iz (A) V-I of Zener diode in foward bias

0.2 0.02 µA 0.0018
0.25 0.3 µA 0.0016
0.3 0.4 µA 0.0014

0.35 0.4 µA 0.0012

IZ (mA)
0.001
0.4 0.05 µA 0.0008
0.45 0.06 µA 0.0006
0.5 0.19 µA 0.0004

0.55 0.85 µA 0.0002

0
0.6 4.8 µA 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7 0.75
0.65 36.4 µA VZ (V)
0.7 0.235 m
0.75 1.67 m Graph 2

Table 2.0

• Zener diode in reverse bias

Vs (V) Vz (V) Iz (A)

0 -0.190 0 V-I of Zener diode in reverse bias
2 -2.1 -0.9 µA 0.002
4 -3.80 -150.2 µA 0
-5 -4 -3 -2 -1 -0.002 0
6 -4.45 -3.2 mA -0.004
8 -4.67 -7.1 mA -0.006
IZ (mA)

-0.008
8.5 -4.7 -7.8 mA -0.01
9 -4.7 -9 mA -0.012
-0.014
9.5 -4.7 -10 mA -0.016
10 -4.7 -11.2 mA -0.018
-0.02
11 -4.7 -13.25 mA
VZ (V)
12 -4.7 -15.3 mA
13 -4.7 -17.8 mA
Graph 2.1

Table 2.1

Page | 8 Diode Characteristics

Results in Multisim

• Zener diode in forward bias

Vz (V) Iz (A)
V-I of Zener diode in foward bias
0.2 µA
0.00014
0.25 µA
0.00012
0.3 µA
0.0001
0.35 µA

IZ (mA)
0.00008
0.4 µA
0.00006
0.45 µA
0.00004
0.5 µA
0.00002
0.55 µA
0
0.6 µA 0 2 4 6 8 10 12 14
0.65 µA VZ (V)
0.7 m
0.75 m Graph 2.2

Table 2.2

• Zener diode in reverse bias

Vs (V) Vz (V) Iz (A)

0 0 0 V-I of Zener diode in reverse bias
2 -2 -0.4 µA 0
-5 -4 -3 -2 -1 -0.002 0
4 -4 - 0.8 µA
-0.004
6 -4.6 - 3 mA -0.006
IZ (mA)

8 -4.7 -7 mA -0.008
8.5 -4.7 -8 mA -0.01

9 -4.7 - 7mA -0.012

-0.014
9.5 -4.7 -10 mA
-0.016
10 -4.7 - 11 mA
-0.018
11 -4.7 - 13 mA VZ (V)
12 -4.7 -15 mA
13 -4.7 -17 mA Graph 2.3

Table 2.3

Page | 9 Diode Characteristics

Relationship between source voltage and Zener diode voltage

• Results in laboratory

Vs (V) Vz (V)
Relationship between Vs and Vz
0 -0.1 14
2 -2.1 12
10
4 -3.8
8
6 -4.45 6

Vs(v)
8 -4.67 4
2
8.5 -4.7 0
9 -4.7 -2 1 2 3 4 5 6 7 8 9 10 11 12
-4
9.5 -4.7
-6
10 -4.7
Vz(v)
11 -4.7
Vs (V) Vz (V)
12 -4.7
13 -4.7 Graph 2.4
Table 2.4

• Results in Multisim

Vs (V) Vz (V)
Relationship between Vs and Vz
0 0
14
2 -2
12
4 -4 10
6 -4.68 8
6
Vs(v)

8 -4.7 4
8.5 -4.7 2
0
9 -4.7 -2 1 2 3 4 5 6 7 8 9 10 11 12
9.5 -4.7 -4
-6
10 -4.7
Vz(v)
11 -4.7 VS VZ
12 -4.7
13 -4.7 Graph 2.5
Table 2.5

Page | 10 Diode Characteristics

Discussion

After conducting the experiment, it was found that the diode is only biased forward when the
voltage is above 0.7 and the diode maintains its voltage 0.7, even if the voltage increases and
the diode prevents the current from passing in the case of reverse bias until it reaches the
breakdown point.
Rather, relative to the Zener diode, it is biased forward when the voltage is above 0,7, and the
diode maintains its voltage 0,7 even if the voltage increases, and in the case of reverse bias, the
Zener diode allows the current to pass only after overcoming a certain voltage specified by the
manufacturer. Which is mostly 4.7

References
[1] & [2] - Electronic devices: conventional current version / Thomas L. Floyd. — 9th ed.

& Practical Electronics for Inventors / Paul Scherz & Simon Monk. — 4th ed.

Page | 11 Diode Characteristics

Questions and answers

Q1 / Calculate the static resistance of diode at VD = 0.5V, 0.75V, -15V.

Sol

V(D)
RD =
I(D)

VD (V) 0.5 0.75 -15

ID (A) 139.5 µA 35.5 mA -1.5 µA
RD(Ω) 3.5 K Ω 21.1 Ω 10 MΩ

Q2 / Calculate the dynamic resistance of diode at VD = 0.72V.

Sol

∆V(D) 0.72v
RD = RD = RD = 20.5 Ω
∆I(D) 35.1mA

Q3 / Calculate the impedance resistance of Zener at breakdown

Sol
∆V(Z) −4.7v
RZ = RD = RD = 602.5 Ω
∆I(Z) −7.8mA

Page | 12 Diode Characteristics