Spec. No.

: C800S6R
Issued Date : 2010.03.29
CYStech Electronics Corp. Revised Date : 2013.03.28
Page No. : 1/7

ESD protected Dual N-CHANNEL MOSFET

MTDK5S6R
BVDSS 30V
ID 250mA
VGS=4V, ID=10mA 1.3Ω
RDSON(TYP)
VGS=2.5V, ID=1mA 2.7Ω

Description
• Low voltage drive(2.5V drive) makes this device ideal for portable equipment.
• The MOSFET elements are independent, eliminating mutual interference.
• Mounting cost and area can be cut in half.
• High speed switching
• ESD protected device
• Pb-free lead plating & halogen-free package

Symbol Outline
MTDK5S6R SOT-363

Tr1 Tr 2

The following characteristics apply to both Tr1 and Tr2

Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Drain-Source Voltage BVDSS 30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current ID ±250 mA
Pulsed Drain Current (Ta=25°C) IDM ±800 *1 mA
Total Power Dissipation PD 200 *2 mW
ESD susceptibility 1550 *3 V
Operating Junction and Storage Temperature Range Tj ; Tstg -55~+150 °C
Thermal Resistance, Junction-to-Ambient Rth,ja 625 °C/W
Note : *1. Pulse Width ≤ 10μs, Duty cycle ≤1%
*2. With each pin mounted on the recommended lands.
*3. Human body model, 1.5kΩ in series with 100pF

MTDK5S6R CYStek Product Specification

 Spec. No. : C800S6R
Issued Date : 2010.03.29
CYStech Electronics Corp. Revised Date : 2013.03.28
Page No. : 2/7

Thermal Data
Parameter Symbol Value Unit
625 (total)
Thermal Resistance, Channel-to-ambient, max *Rth,ch-a °C/W
800 (per element)
Note : With each pin mounted on the recommended lands.

Electrical Characteristics (Ta=25°C)

Symbol Min. Typ. Max. Unit Test Conditions

Static
BVDSS 30 - - V VGS=0, ID=100μA
VGS(th) 0.8 1.2 1.5 V VDS=3V, ID=100μA
IGSS - - ±5 μA VGS=±20V, VDS=0
IDSS - - 100 nA VDS=30V, VGS=0
- 1.3 3 VGS=4V, ID=10mA
RDS(ON) Ω
- 2.7 5 VGS=2.5V, ID=1mA
GFS 20 70 - mS VDS=3V, ID=10mA
Dynamic
Ciss - 31.5 -
Coss - 7.3 - pF VDS=5V, VGS=0, f=1MHz
Crss - 5.5 -
td(on) - 11 -
tr - 6 - VDD≒5V, ID=10mA, VGS=5V, RL=500Ω,
ns
td(off) - 42 - RG=10Ω
tf - 16 -
Qg - 0.66 -
Qgs - 0.05 - nC ID=10mA, VDS=15V, VGS=4V
Qgd - 0.25 -
Source-Drain Diode
*VSD - 0.8 1.2 V VGS=0V, IS=100mA
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

Ordering Information
Device Package Shipping
SOT-363
MTDK5S6R-0-T1-G 3000 pcs / Tape & Reel
(Pb-free lead plating & halogen-free package)

MTDK5S6R CYStek Product Specification

 Spec. No. : C800S6R
Issued Date : 2010.03.29
CYStech Electronics Corp. Revised Date : 2013.03.28
Page No. : 3/7

Typical Characteristics
Typical Output Characteristics Typical Transfer Characteristics
1.2 1.2
VDS=5V
1.0 4V 1
ID, Drain Current(A)

ID, Drain Current(A)

0.8 0.8
3.5V
0.6 0.6

0.4 3V 0.4

0.2 2.5V 0.2

VGS=2V
0.0 0
0 1 2 3 4 5 6 0 1 2 3 4 5
VDS , Drain-Source Voltage(V) VGS , Gate-Source Voltage(V)

Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage
1000 1.2
R DS(on), Static Drain-Source On-State

Tj=25°C
VSD, Source-Drain Voltage(V)

1
100
Resistance(Ω)

0.8
VGS=1.8V Tj=125°C
0.6
10 VGS=2.5V
VGS=4.5V 0.4

1 0.2
0.001 0.01 0.1 1 0 0.2 0.4 0.6 0.8 1
ID, Drain Current(A) IDR , Reverse Drain Current(A)

Static Drain-Source On-State Resistance vs Gate-Source Drain-Source On-State Resistance vs Junction Tempearture
Voltage
7 2
R DS(ON), Normalized Static Drain-
R DS(ON), Static Drain-Source On-

6 ID=10mA VGS=4V, ID=10mA

Source On-State Resistance

1.6
State Resistance(Ω)

4
1.2
3

2 0.8

0 0.4
0 1 2 3 4 -60 -20 20 60 100 140 180
VGS, Gate-Source Voltage(V) Tj, Junction Temperature(°C)

MTDK5S6R CYStek Product Specification

 Spec. No. : C800S6R
Issued Date : 2010.03.29
CYStech Electronics Corp. Revised Date : 2013.03.28
Page No. : 4/7

Typical Characteristics(Cont.)

Threshold Voltage vs Junction Tempearture

Capacitance vs Drain-to-Source Voltage
100 1.4

VGS(th), NormalizedThreshold Voltage

ID=250μA
Ciss 1.2
Capacitance---(pF)

1
10
C oss
0.8

0.6
Crss

1 0.4
0.1 1 10 100 -60 -20 20 60 100 140
VDS, Drain-Source Voltage(V) Tj, Junction Temperature(°C)

Forward Transfer Admittance vs Drain Current Brekdown Voltage vs Ambient Temperature

1 1.6
GFS, Forward Transfer Admittance(S)

BVDSS, Normalized Drain-Source

1.4
Breakdown Voltage

1.2

0.1 1

0.8
VDS=3V ID=250μA,
Pulsed 0.6 VGS=0V
Ta=25°C
0.01 0.4
0.001 0.01 0.1 1 -60 -20 20 60 100 140 180
ID, Drain Current(A) Tj, Junction Temperature(°C)

Power Derating Curve Maximum Drain Current vs Junction Temperature

250 0.3
ID, Maximum Drain Current(A)

0.25
PD, Power Dissipation(mW)

200
0.2
150
0.15
100
0.1

50 0.05
TA=25°C, VGS=4V, RθJA=800°C/W

0 0
0 50 100 150 200 25 50 75 100 125 150 175
TA, Ambient Temperature(℃) Tj, Junction Temperature(°C)

MTDK5S6R CYStek Product Specification

 Spec. No. : C800S6R
Issued Date : 2010.03.29
CYStech Electronics Corp. Revised Date : 2013.03.28
Page No. : 5/7

Reel Dimension

Carrier Tape Dimension

MTDK5S6R CYStek Product Specification

 Spec. No. : C800S6R
Issued Date : 2010.03.29
CYStech Electronics Corp. Revised Date : 2013.03.28
Page No. : 6/7

Recommended wave soldering condition

Product Peak Temperature Soldering Time
Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds

Recommended temperature profile for IR reflow

Profile feature Sn-Pb eutectic Assembly Pb-free Assembly

Average ramp-up rate
3°C/second max. 3°C/second max.
(Tsmax to Tp)
Preheat
−Temperature Min(TS min) 100°C 150°C
−Temperature Max(TS max) 150°C 200°C
−Time(ts min to ts max) 60-120 seconds 60-180 seconds
Time maintained above:
−Temperature (TL) 183°C 217°C
− Time (tL) 60-150 seconds 60-150 seconds
Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C
Time within 5°C of actual peak
10-30 seconds 20-40 seconds
temperature(tp)
Ramp down rate 6°C/second max. 6°C/second max.
Time 25 °C to peak temperature 6 minutes max. 8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.

MTDK5S6R CYStek Product Specification

 Spec. No. : C800S6R
Issued Date : 2010.03.29
CYStech Electronics Corp. Revised Date : 2013.03.28
Page No. : 7/7

SOT-363 Dimension

Marking:

Date Code:
Year + Month
Year : 6→2006,

K5 7→2007,…, etc
Month : 1→Jan
2→Feb, …, 9→
Sep, A→Oct, B
Device →Nov, C→Dec
Code

6-Lead SOT-363R Plastic

Surface Mounted Package
CYStek Package Code: S6R

Style:
Pin 1. Source1 (S1)
Pin 2. Gate1 (G1)
Pin 3. Drain2 (D2)
Pin 4. Source2 (S2)
Pin 5. Gate2 (G2)
Pin 6. Drain1 (D1)

Millimeters Inches Millimeters Inches

DIM DIM
Min. Max. Min. Max. Min. Max. Min. Max.
A 0.900 1.100 0.035 0.043 E1 2.150 2.450 0.085 0.096
A1 0.000 0.100 0.000 0.004 e 0.650 TYP 0.026 TYP
A2 0.900 1.000 0.035 0.039 e1 1.200 1.400 0.047 0.055
b 0.150 0.350 0.006 0.014 L 0.525 REF 0.021 REF
c 0.080 0.150 0.003 0.006 L1 0.260 0.460 0.010 0.018
D 2.000 2.200 0.079 0.087 θ 0° 8° 0° 8°
E 1.150 1.350 0.045 0.053
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
• Lead : Pure tin plated.
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0.

Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.

• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

MTDK5S6R CYStek Product Specification