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16.08.18 R.S.
Application:
Light Barrier / Interrupter for a distance of up to 4 cm
With this relatively small distance small dome lens versions could be used.
The detector could be just a phototransistor.

Depending on the mechanical requirement either top view or side view components could be needed:

+
Powerful small Dome Lens
Even more powerful small Dome Lens
Again more powerful small Dome Lens
VSMB2948SL uses a smaller chip than VSMB2943SLX01
and should only be used up to 500mA peak current
 Optoelectronics

VSMY2853SL
 Optoelectronics

Application if speed is critical:

detector should be a photodiode instead of phototransistor

A photodiode shows typical 100 ns rise- / fall times.

A phototransistor comes here with about 10 µs and this also only for low load resistor and
high collector current.

BUT, please see also: http://www.vishay.com/docs/80085/measurem.pdf

There especially figures 25 and 26 explaining about emitters wavelength, reverse bias, and
load resistor influencing the timings
 Optoelectronics

VEMD2523SLX01, VEMD2023SLX01

VEMD2523SLX01

VEMD2023SLX01

VEMD2023SLX01
 Optoelectronics

A photodiode shows typical very low Reverse Dark Current and

also a good temperature behavior.
This allows a reliable signal detection down to very low irradiance values.
Optoelectronics

+ VC = 3.3V
IF = 100mA
RE

UF = 1.2V
A photodiode may be operated down to irradiances as low as
0.01 mW/cm2
Also the reverse dark current needs to seen.
For TEMD7000X01 it is <=3nA (at 25°C).

Ira = 0.03 … 3µA (with Ee = 0.01..1mW/cm2 )

Optoelectronics

More photodiode circuitries please find also here:

https://www.vishay.com/docs/80085/measurem.pdf

10MΩ

No separat C needed

+3.3V
-
Uo
+

Uo = ID x RF

With an Ira of just 30 nA [@0.01 mW/cm2 ] a very sensitve

and noise free amplification stage is needed
How to calculate ?

taken from:
http://irtel.uni-mannheim.de/lehre/seminar-psychophysik/artikel/Alex_Ryer_Light_Measurement_Handbook.pdf
Calculating the needed emitter current.
Here for VSMB20x0X01 and VEMT20x0X01
Distance: d should be >20mm
+ for this calculation

With the so-called inverse square rule: Ie = Ee x d2

and the known maximum distance (d) as well as minimum needed/wanted irradiance (Ee) the minimum intensity (Ie) can be calculated.

To be safe against disturbing light sources the irradiance reaching the detector should not be chosen too low,
Ee = 0.5 mW/cm2 should be sufficient.

VSMB20x0X01 is defined with Ie >= 20 mW/sr[@100mA]

and VEMT20x0X01 is defined with Ic >= 3 mA[@1mW/cm2].

A load resistor is chosen that Ic =1.5mA will lead to required output voltage, typ.
what is chosen here to Uo >=4.0V with a supply voltage of 5V. 3
1.5
min.
The needed intensity for the VSMB20x0X01 is then:
Ie = Ee x d2 = 0.5 mW/cm2 x (4cm)2 = 8 mW/sr .

To ensure this, the needed emitter current should be 40mA

0.5
Calculating the needed emitter current.
Here for VSMB20x0X01 and VEMT20x0X01

+ VC = 5V

IF = 40mA + VC = 5V
RE
RE = (5V-1.2V)/40mA = 95Ω

UF = 1.2V
optional

VSMB20x0X01 driven with 40mA

will ensure an output voltage higher than 4V with a distance of RL
4cm between emitter and detector also with calculating with 2.7kΩ
both min values: for emitter as well as detector.

RL = 4V/1.5mA = 2.66kΩ  2.7kΩ

Calculating the needed emitter current.
Here for VSMB2943SLX01 and VEMT2023SLX01
Distance: d should be >20mm
for this calculation

With the so-called inverse square rule: Ie = Ee x d2

and the known maximum distance (d) as well as minimum needed/wanted irradiance (Ee) the minimum intensity (Ie) can be calculated.

To be safe against disturbing light sources the irradiance reaching the detector should not be chosen too low,
Ee = 0.5 mW/cm2 should be sufficient.

VSMB2043SLX01 is defined with Ie >= 10 mW/sr[@100mA]

and VEMT2023SLX01 is defined with Ic >= 1.3 mA[@1mW/cm2].

A load resistor is chosen that Ic =0.65mA will lead to required output voltage,
what is chosen here to Uo >=4.0V with a supply voltage of 5V.

VEMT2023SLX01 delivers an Ic >= 1.3 mA[@1mW/cm2], so,

typ.
Ic >= 0.65 mA[@0.5mW/cm2]. 1.3

The needed intensity for the VSMB2043SLX01 is then: 0.65

min.
Ie = Ee x d2 = 0.5 mW/cm2 x (4cm)2 = 8 mW/sr .

To ensure this, the needed emitter current should be 80mA

0.5
Calculating the needed emitter current.
Here for VSMB2943SLX01 and VEMT2023SLX01

+ VC = 5V

IF = 80mA + VC = 5V
RE
RE = (5V-1.3V)/80mA = 46Ω

UF = 1.3V
optional

VSMB2043SLX01 driven with 80mA

will ensure an output voltage higher than 4V with a distance of
4cm between emitter and detector also with calculating with
both min values: for emitter as well as detector.
RL
6.2kΩ
A drive current of 80mA is quite high, so maybe the irradiance
could be chosen lower (e.g. if there is no direct impact of
disturbing light sources). That would allow for lower output
current. With a more highohmic load resistor again the needed
output voltage would be available (see next page) RL = 4V/0.65mA = 6.15kΩ  6.2kΩ
Calculating the needed emitter current.
Here for VSMB2943SLX01 and VEMT2023SLX01

Now Ee = 0.25 mW/cm2 is chosen.

+ VC = 5V
A load resistor is chosen now that Ic =0.325mA will lead + VC = 5V
to required output voltage, IF = 40mA
what is chosen here to Uo >=4.0V. RE
RE = (5V-1.2V)/40mA = 95Ω

VEMT2023SLX01 delivers an Ic >= 1.3 mA[@1mW/cm2], so,

UF = 1.2V
Ic >= 0.325 mA[@0.25mW/cm2].

The needed intensity for the VSMB2043SLX01 is then: optional

Ie = Ee x d2 = 0.25 mW/cm2 x (4cm)2 = 4 mW/sr .

To ensure this, the needed emitter current should be 40mA

RL
6.2kΩ

typ.
0.675
0.325
min.
RL = 4V/0.325mA = 12.3kΩ  12kΩ
0.25
Needing a bit higher distance of operation ?
VSMY2850.GX01 and VEMT….. will offer !

VSMY2850.GX01 More than double compared to VSMB20x0X01 …

…. and VEMT`s sensitivity at 850nm fits here perfect

Surface Emitter also

available as Side Looker:

VSMY2853SL
Calculating the needed emitter current.
Here for VSMY2850.G and VEMT20x0X01
Distance: d should be >20mm
for this calculation

With the so-called inverse square rule: Ie = Ee x d2

and the known maximum distance (d) as well as minimum needed/wanted irradiance (Ee) the minimum intensity (Ie) can be calculated.

To be safe against disturbing light sources the irradiance reaching the detector should not be chosen too low,
Ee = 0.5 mW/cm2 should be sufficient.

VSMY2850.G is defined with Ie >= 50 mW/sr[@100mA]

and VEMT20x0X01 is defined with Ic >= 3 mA[@1mW/cm2].

A load resistor is chosen that Ic =1.5mA will lead to required output voltage, typ.
what is chosen here to Uo >=4.0V with a supply voltage of 5V. 3
1.5
min.
The needed intensity for the VSMY2850 is then:
Ie = Ee x d2 = 0.5 mW/cm2 x (4cm)2 = 8 mW/sr .

To ensure this, the needed emitter current should be 16mA

0.5
What about 5cm distance?
Here for VSMY2850.G and VEMT20x0X01
Reflective sensor:
Light needs double the way to travel
AND: the reflectivity of the object needs to be seen !
+

With the so-called inverse square rule: Ie = Ee x d2

and the known maximum distance (d) as well as minimum needed/wanted irradiance (Ee) the minimum intensity (Ie) can be calculated.

To be safe against disturbing light sources the irradiance reaching the detector should not be chosen too low,
Ee = 0.5 mW/cm2 should be sufficient.

VSMY2850.G is defined with Ie >= 50 mW/sr[@100mA]

and VEMT20x0X01 is defined with Ic >= 3 mA[@1mW/cm2].

A load resistor is chosen that Ic =1.5mA will lead to required output voltage, typ.
what is chosen here to Uo >=4.0V with a supply voltage of 5V.
50
The needed intensity for the VSMY2850 is then: min.
Ie = Ee x d2 = 0.5 mW/cm2 x (10cm)2 = 50 mW/sr .

To ensure this, the needed emitter current should be 100mA

What about 10cm distance?
Here for VSMY2850.G and VEMT20x0X01
Reflective sensor:
Light needs double the way to travel
AND: the reflectivity of the object needs to be seen !
+

With the so-called inverse square rule: Ie = Ee x d2

and the known maximum distance (d) as well as minimum needed/wanted irradiance (Ee) the minimum intensity (Ie) can be calculated.

To be safe against disturbing light sources the irradiance reaching the detector should not be chosen too low,
Ee = 0.5 mW/cm2 should be sufficient.

VSMY2850.G is defined with Ie >= 50 mW/sr[@100mA] typ.

and VEMT20x0X01 is defined with Ic >= 3 mA[@1mW/cm2]. 400
200
A load resistor is chosen that Ic =1.5mA will lead to required output voltage,
what is chosen here to Uo >=4.0V with a supply voltage of 5V.

The needed intensity for the VSMY2850 is then: min.

Ie = Ee x d2 = 0.5 mW/cm2 x (20cm)2 = 200 mW/sr .

To ensure this, the needed emitter current should be 400mA !

This surely is only possible with pulsing the emitter !

What about 10cm distance?
Here for VSMY2850.G and VEMD20x0X01
Reflective sensor:
Light needs double the way to travel
AND: the reflectivity of the object needs to be seen !
+

With the so-called inverse square rule: Ie = Ee x d2

and the known maximum distance (d) as well as minimum needed/wanted irradiance (Ee) the minimum intensity (Ie) can be calculated.

To be safe against disturbing light sources the irradiance reaching the detector should not be chosen too low,
Ee = 0.1 mW/cm2 should be sufficient.

VSMY2850.G is defined with Ie >= 50 mW/sr[@100mA]

and VEMD20x0X01 is defined with Ic >= 8.5 μA[@1mW/cm2],
so, Ic >= 850 nA[@0.1mW/cm2].

typ.

The needed intensity for the VSMY2850 is then: 40

Ie = Ee x d2 = 0.1 mW/cm2 x (20cm)2 = 40 mW/sr . 20
min.
To ensure this, the needed emitter current should be 40mA !

This surely is possible also with DC operation of the emitter !

Even 50cm distance needed?
Here Emitter AND photodetector need to be much stronger

Here also Ee = 0.1 mW/cm2 should be wanted what will lead typical to 0.9mA, but min. >=0.3mA.

TSAL6102 is defined with Ie >= 150 mW/sr[@100mA]

and BPV11F is defined with Ic >= 3 mA[@1mW/cm2],
so, Ic >= 0.3 mA[@0.1mW/cm2].

typ.
220
The needed intensity for the TSAL6102 is then: 150 min.
Ie = Ee x d2 = 0.1 mW/cm2 x (50cm)2 = 250 mW/sr .

To ensure this, the needed emitter current needs to be higher than 100mA !

Pulsed operation mode is needed to allow for peak currents of >100mA!

Pulsing with tp/T = 0.5 already allows for 200mA and this would be enough
More than 50cm distance with small dome lens?

Here also Ee = 0.1 mW/cm2 should be wanted what will lead typical to 12µA, but min. >=8.5µA.

VSMY2850.G is defined with Ie >= 50 mW/sr[@100mA]

and VEMD20x0X01 is defined with Ic >= 8.5 μA[@1mW/cm2],
so, Ic >= 850 nA[@0.1mW/cm2].
typ.
12

The needed intensity for the VSMY2850 is then:

Ie = Ee x d2 = 0.1 mW/cm2 x (50cm)2 = 250 mW/sr .

To ensure this, the needed emitter current needs to be 250mA (typ.) !

0.85
With Min. value it needs to be driven with 500mA !
min.
Here only short pulses (tp) <=1ms are allowed and repetition rate (T)
needs to be low enough, >=20ms, so, tp/T <= 0.05
Application requires a Transmissive Sensor ?

5V
 5V

d = 10mm
3.6V

6.4mA

1.4V

With If = 6.4mA just >= 1.3 mW/sr is possible

With Ie >= 1 mW/sr Ic >= 1.3mA is possible, typ. 2.7mA

5V

With Ic >= 1.3mA and RL = 10k URL >= 13V, means:

also 3.9k is sufficient: URL >= 1.3mA x 3.9k >= 5V,
even 3.6k will result in >=4.7V
Distance just 10mm!
Here for VSMY2853 and VEMT2023X01
With the so-called inverse square rule: Ie = Ee x d2
and the known maximum distance (d) as well as minimum needed/wanted irradiance (Ee) the minimum intensity (Ie) can be calculated.

To be safe against disturbing light sources the irradiance reaching the detector should not be chosen too low,
here Ee = 1 mW/cm2 should be sufficient.

The needed intensity for the VSMY2853 is then:

Ie = Ee x d2 = 1 mW/cm2 x (1cm)2 = 1 mW/sr .

VSMY2853 is defined with Ie >= 20 mW/sr[@100mA] , so,

for Ie >= 1 mW/sr  If >= 5mA.

VEMT2023X01 is defined with Ic >= 1.3 mA[@1mW/cm2].

typ.
2.7 typ.
2
1.3

min. min.
 5V

3.6k

3.6V

6.4mA

1.4V typ.
0.5

min.

If now the barrier does not cover the light path fully,
let`s say just reduction to less than 1/5 (20%), so, Ee = 0.2 mW/cm2 still available,
this can only lead to <= 0.5mA and with RL = 3k6 URL <= 1.8V
Application requires a Reflective Sensor ?
A light barrier in-between is
recommended capacitor

Reveres Gullwing may also need

a light barrier in-between

SMD capacitor

A light barrier in-between is

recommended
Light barrier could be just the
often needed Decoupling-C
How to calculate ?

Also here for reflective sensors same Inverse Square law can be used,
but this is only correct for distance from light source to reflective medium.

The way back to the detector may show higher losses than squared!

In addition there will be losses due to the diffuse reflectance

and possible reflection losses of the object
How to calculate ?

The forward current defining resistor should be defined so, that depending on the distance to the detector,
there -at the receiver side- an irradiance Ee of >= 0.5 mW/cm2 appears.

With IR light reaching the detector

Uc should be <=0.5V

UR8 = 3.9V R10 = 4.5V / 0.1mA = 45k

Uf = 1.1V

R8 = 820R

If = 5mA

If also speed could be critical this resistor should be lower (collector current higher, Ic>=1mA)
R10 = 4.5V / 1mA = 4.5k.

Surely then also the emitter current needs to be higher: If = 10mA

Calculating the needed emitter current.
Here for VSMB2020X01 and TEMT7100X01
Distance: d should be >5mm
+ for this calculation

With the so-called inverse square rule: Ie = Ee x d2

and the known maximum distance (d) as well as minimum needed/wanted irradiance (Ee) the minimum intensity (Ie) can be calculated.

To be safe against disturbing light sources the irradiance reaching the detector should not be chosen too low,
Ee = 0.5 mW/cm2 should be sufficient.

VSMB20x0X01 is defined with Ie >= 20 mW/sr[@100mA]

and TEMT7100X01 is defined with Ic >= 0.45 mA[@1mW/cm2].

A load resistor is chosen that Ic =0.1mA will lead to required output voltage,
what is chosen here to Uo <=0.5V with a supply voltage of 5V. typ.
0.225
0.112
The needed intensity for the VSMB20x0X01 is then: min.
Ie = Ee x d2 = 0.5 mW/cm2 x (1cm)2 = 0.5 mW/sr .

To ensure this, the needed emitter current should be >=2.5mA

0.5
Calculating the needed emitter current.
Here for VSMB2020X01 and TEMT7100X01
Distance: d should be >5mm
+ for this calculation

If speed could be critical collector current should be >=1mA

TEMT7100X01should receive Ee >=2 mW/cm2.

Then the needed intensity for the VSMB20x0X01 would be:

Ie = Ee x d2 = 2 mW/cm2 x (1cm)2 = 2 mW/sr .

To ensure this, the needed emitter current should be >=10mA min.

>2
Calculating the needed emitter current.
Here for VSMB2020X01 and TEMT7100X01
Distance: d should be >5mm
+ for this calculation

+ VC = 5V

IF = 5mA + VC = 5V
RE
RE = (5V-1.1V)/5mA <= 780Ω

UF = 1.1V
optional

VSMB20x0X01 driven with 5mA

will ensure an output voltage higher than 4.5V with a distance RL
of 0.5cm between emitter and detector also with calculating 47kΩ
with both min values: for emitter as well as detector.

RL = 4.5V/0.1mA = 45kΩ  47kΩ

Reflective Sensor with single components
and as small as possible ?
A light barrier in-between is
e.g.: recommended

VSMB1940X01
VSMY1850X01 TEMT7100X01

Light barrier could be just the

often needed Decoupling-C,
here a small 0805 or even
smaller could be enough
Reflective Sensor with 0805 components
and Decoupling-C as light-barrier in-between

VSMB1940X01 TEMT7100X01

…. small 0603 X7R / X5R decoupling-C

Reflective Sensor with 0805 components
and Decoupling-C as light-barrier in-between

VSMB1940X01 TEMT7100X01

Kodak Gray card in d = 5mm distance

Uo = Io x RL = 3.3V/0.325mA = 12.3kΩ  12kΩ

RL = 2.7kΩ

Uo = Io x RL
= 0.4mA x 2.7kΩ
= 1.08V
UF = 1.3V

IF = 40mA

RE = (3.3V-1.3V)/40mA = 51Ω
Reflective Sensor with VSMB1940X01 and TEMT7100X01
and Decoupling-C as light-barrier in-between

VSMB1940X01 TEMT7100X01

Test set-up:

VSMB1940X01 and TEMT7100X01

assembled in 2mm distance from each other.
Kodak Gray card in d = 3mm distance
( small plastic light barrier in-between)

Connected and driven as explained before.

About 400mV crosstalk due to ambient light

Glass cover
disturbance and in-sufficient light barrier. in d = 1mm
distance

Covering the sensor with a glass ( ≈1mm thick)

leads now to a voltage of about 1V.

Kodak Gray card put above that glass is

recognized with >= 2V. Crosstalk

[ 2.04798V limitation due to capability of used

A/D converter IC ]
Reflective Sensor for high operating temperatures with
VSMY1940ITX01 and TEMT7100ITX01

VSMY1940ITX01 TEMT7100ITX01

With these components an operation up to 105°C is possible.

Surely the forward current needs to be reduced to just <=15mA to allow for this high operating temperature of 105°C as just 5K are remaining to reach junction
temperature and this is reached with 1.3V x 15mA x 250K/W
Estimation of degradation with such high temperatures
for VSMY1940ITX01

VSMY1940ITX01 Continuous operation at a defined ambient temperature and defined current would result in:

Operation with different ambient temperatures and defined current would result in:

Operation with just 1% of total time at 105°C and defined current would result in:
taken from: AN optical sensors reflective 81449
http://www.vishay.com/docs/81449/81449.pdf

Skin : 35 … 45 %
Avoiding crosstalk and influence from cover
To reduce not only the crosstalk from emitter to detector
but lower also the influence of small changes what
might happen to the cover (e.g. dust, moisture) total
separation of the IR window above the optical
components would help.

Separate IR windows

Separate chambers
Avoiding crosstalk and influence from cover
To reduce not only the crosstalk from emitter to detector
but lower also the influence of small changes what
might happen to the cover (e.g. dust, moisture) total
separation of the IR window above the optical
components would help.

Separate IR windows

Separate chambers

1.75mm
PLCC-2 devices instead of Dome Lens

VSMB3940X01 and VEMT3700FX01

1.75mm
Avoiding crosstalk and influence from cover
To reduce not only the crosstalk from emitter to detector
but lower also the influence of small changes what
might happen to the cover (e.g. dust, moisture) total
separation of the IR window above the optical
components would help.

2mm cover glass

2mm
1mm gap

1.75mm 1mm
PLCC-2 devices instead of Dome Lens
Avoiding crosstalk and influence from cover
To reduce not only the crosstalk from emitter to detector
but lower also the influence of small changes what
might happen to the cover (e.g. dust, moisture) total
separation of the IR window above the optical
components would help.

2mm cover glass

2mm
1mm gap

1.75mm 1mm
PLCC-2 devices instead of Dome Lens
Avoiding crosstalk and influence from cover
To reduce not only the crosstalk from emitter to detector
but lower also the influence of small changes what
might happen to the cover (e.g. dust, moisture) total
separation of the IR window above the optical
components would help.

2mm cover glass

2mm
1.9mm gap

1.9mm

0.85mm
0805 devices instead of Dome Lens
VCNT2020
Technology
• Integrated emitter and photodetector in single package

Advantages
• Package: 2.5 mm x 2.0 mm x 0.8 mm
• Detection range: 0.2 mm to 6 mm
• Emitting wavelength: 940 nm
• Output: Phototransistor
• Excellent internal crosstalk suppression
• Operating temperature: -40 °C to +110°C
• Wettable flanks

0.8mm
Smallest possible reflective sensor

Target Applications
• Optical encoder, optical switch, object detection
• Vending machines, ATM machine – to control card
feeder movement and dispensing motor
• Automotive sensor
VCNT2020 Doubling the forward
current will lead to
enhance distance √2

Min. CTR is
IC/IF = 0.5mA/20mA= 0.025 = 2.5%.
VCNT2020
Simple application circuitry
+ Vc may be up to 20V
Sensing distance should be 5mm!
Object is good reflective, >90%. + VC = 5V
According Fig.9 just about 5% of the collector current will be present
than that seen at 1mm! RE

UF = 1.2V ..1.4V
Min. CTR is IC/IF = 0.5mA/20mA= 0.025.
To get sufficient collector current the forward current
needs to be high enough, IF = 40mA here chosen.
IC is then >= 0.025 x 40mA >= 1mA. optional

Wished output voltage should be >=4.6V

RE = (5V-1.3V)/40mA = 92.5Ω  82Ω

RL
RL = 4.6V/1mA = 4.6kΩ  4.7kΩ

VCNT2020 needs just 2 additional resistors, for defining the emitter current and the output voltage
VCNT2020
9V 9V

Several VCNT2020 within an application detecting fill UO1

height of a clear glass cylinder

UO2

UO3

UO4

RE = (9V- 4 x 1.5V)/100mA = 30Ω  33Ω

Short pulses allow for higher peak currents resulting in higher intensities
and with that in higher detection distances
Disturbance from ambient light sources
From light sources with strong infrared content there will come additional disturbances,
e.g.: sunlight, incandescent light, not from fluorescent or LED light, as there is no IR content.
The amount of loading the detector will be same for all detector components!

It is about same reduced with this so-called daylight filter what is available on many of our detectors,
as also on TEMT7100X01, VEMT3700F, …..
But this epoxy filter behaves also different depending on mixture and thickness it is added to the component.

TEMT7100 VEMT3700F

VEMT3700F shows peak sensitivity at 940nm and a very strong filter

Disturbance from ambient light sources
To improve ambient light surpressing further more an AC coupled amplifier may be added behind the phototransistor.
This surely needs then also the wanted emitter signal pulsed.
The load resistor needs to be chosen so, that the most worse ambient light condition cannot lead to saturation.

RE
5V
5V

+5V

+ Uo

Ui
RL