Beruflich Dokumente
Kultur Dokumente
ENMA465
14 May 2003
Nicole Harrison
Bryan Sadowski
Anne Samuel
Kunal Thaker
Presentation Outline
• ALD Theory and Processes
• Applications
– Focus on ALD applications in gate
dielectrics
• Equipment
• Comparisons to other Processes
• Current and Future Development
• Questions
What is ALD?
• ALD (Atomic layer deposition) previously
known by the name ALE (Atomic layer
Epitaxy) was originated by T.Suntola in
Finland.
• Deposition method by which precursor
gases or vapors are alternately pulsed on
to the substrate surface.
• Precursor gases introduced on to the
substrate surface will chemisorb or surface
reaction takes place at the surface.
ALD
• Surface reactions on ALD are all self-
limiting.
• Self-limiting characteristics of the process
steps is the foundation of ALD.
• Two fundamental self-limiting mechanisms
in ALD: CS-ALD and RS-ALD.
• CS-ALD: Chemisorption Saturation process
followed by exchange reaction.
• RS-ALD: Sequential surface chemical
reaction.
CS-ALD Process
• Substrate is exposed to the first
molecular precursor. The first molecular
precursor is retained on the surface by
chemisorption.
• The surface now looks like initial surface (AN) and surface is now
ready for reaction (A). The repetition of ABAB…sequence will
deposit films.
– Consistency
Mecha
nism
– Conformality
– Uniformity
ALD
Mode
Equipment
• Research into more efficient equipment design continues
– PEALD/ ALD reactor developed by Genitech
Corporation
• less contamination
• low pressures
– typically less than 10-6 torr
• Film thickness can be as low as 1nm
• produces amorphous films
• lower deposition temperatures
– as low as 180oC for HfO2
Comparison Continued
• slow deposition rates
because have to form
monolayer in two steps
– HfO2: dep. rate of
0.1nm/s @ 300oC
• Growth rate
– increases, reaches
a max, and
decreases slightly
as temperature is
increased
– increases with
number of cycles