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Abstract. Theoretical description of spin waves in the p-d Zener model of a dilute magnetic semiconductor in Ref. [1]
allowed us to discover new effects resulting from spatial inversion asymmetries. In this paper, we focus on thin layers
and bulk crystals of (Ga,Mn)As, as described by the spds? tight-binding computational scheme. We demonstrate how
the Dzyaloshinskii-Moriya interaction in thin layers leads to the formation of a zero-temperature spin cycloid and the
accompanying uniaxial anisotropy of in-plane diagonal ([110]/[11̄0]) directions. We also investigate the exchange stiffness
with its anisotropic part, which accounts for the elliptical polarization of longitudinal spin waves—kinetically, their Lorentz
contraction in the direction of motion. Additionally, a model for the spin-wave contribution to magnetization and Curie
temperature is proposed. Our theory is applied and compared to relevant experimental data gathered during the recent years.
Keywords: spin waves, spin-wave stiffness, exchange interaction, Dzyaloshinskii-Moriya interaction, uniaxial anisotropy, dilute magnetic
semiconductors
PACS: 75.50.Pp, 75.30.Ds, 75.30.Gw
Dilute magnetic semiconductors, like (Ga,Mn)As, are frustration can be observed in samples grown in the [001]
a remarkable class of materials combining magnetic direction, with the easy axis z̃ along an in-plane diago-
and semiconductor properties, with potential applica- nal direction. Then, a spatial spin modulation with the
tions for spintronics. The magnetic order in these sys- period λ = 2π /qmin occurs perpendicularly to z̃, which
tems results from the hole-mediated exchange interac- accounts for the uniaxial in-plane anisotropy of diagonal
tions between spins localized on transition metal impuri- ([110]/[11̄0]) directions. It could be measured by mag-
ties, as described by the p-d Zener model [2]. Thanks to netic force microscopy or neutron scattering. The exper-
these strong interactions, we can replace the atomic pic- imental confirmation of this finding would suggest that
ture with a continuous theory, where they are described thin (Ga,Mn)As films could be considered topological
by a single exchange stiffness parameter A. The low- insulators that can support the quantum spin-Hall effect.
lying nonuniform modes of the system magnetization are The minimum shift of the spin-wave dispersion van-
called spin waves, excited at energy cost given by the ishes in the bulk limit, which can be usually described by
spin-wave stiffness tensor D = 2A/nS (where n is the an isotropic spin-wave stiffness constant D. We express
concentration of localized spins S). it as a dimensionless parameter
The theory of spin waves in dilute magnetic semi-
conductors, allowing for the space inversion symmetry 4(S + 1)kF2 D
Dnor = , (1)
breaking, was derived in our recent paper [1] (cf. [3]). kB TC
Here, we apply it to the p-d Zener model of (Ga,Mn)As.
The band structure is described by the spds? tight- where kF = (3π 2 p)1/3 , p is the hole concentration and
binding computational scheme, accounting for the bulk TC is the Curie temperature. It is approximately 11 over
inversion asymmetry in bulk crystals [4] and, addition- a wide range of Mn and hole concentrations. We compare
ally, the asymmetry of the structure in thin films. Spin po- the obtained theoretical values with available experimen-
larization of individual moments localized on Mn atoms tal data determined from the temperature dependence of
is replaced by a molecular field, which produces a spin- magnetization [5], lamellar domain width [6] and from
splitting of the bands, ∆. spin-wave resonance measurements (e.g. [7]). We obtain
The new prominent feature of the spin-wave disper- only partial agreement, which reemphasizes the role of
sion in (Ga,Mn)As thin films, which distinguishes it surface depletion and pining in dynamics of magnetiza-
from the case of a bulk system, is its minimum shift tion precession in real samples.
to a non-zero ~qmin value (Fig. 1). It is a hallmark of Apart from the spin-wave stiffness and the related
the Dzyaloshinskii-Moriya interaction, which favours a exchange stiffness constants, which arise from the
cycloidal spin arrangement in zinc blende crystals and isotropic part of the exchange interaction, we ana-
reveals itself in the presence of the structure inversion lyze the anisotropic stiffness tensor T induced by the
asymmetry. For further symmetry reasons, the strongest the spin-orbit coupling. It describes the dependence
of exchange energy on the crystalline orientation of
FIGURE 1. Spin-wave dispersion in a thin layer (two monolayers) of (Ga,Mn)As with the minimum shift ~qmin =
(0.43, −0.43) nm−1 and the emerging spin cycloid with the period λ = 10 nm.