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B 04/00
ST333C..C SERIES
INVERTER GRADE THYRISTORS Hockey Puk Version
Features
Metal case with ceramic insulator
International standard case TO-200AB (E-PUK)
All diffused design 720A
Center amplifying gate
Guaranteed high dV/dt
Guaranteed high dI/dt
High surge current capability
Low thermal impedance
High speed performance
Typical Applications
Inverters
Choppers
Induction heating
All types of force-commutated converters
case style TO-200AB (E-PUK)
IT(AV) 720 A
@ T hs 55 °C
IT(RMS) 1435 A
@ T hs 25 °C
@ 60Hz 11500 A
tq range 10 to 30 µs
TJ - 40 to 125 °C
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ST333C..C Series
Bulletin I25170 rev. B 04/00
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage VDRM /VRRM , maximum VRSM , maximum I DRM/I RRM max.
Type number Code repetitive peak voltage non-repetitive peak voltage @ TJ = TJ max.
V V mA
04 400 500
ST333C..C 50
08 800 900
On-state Conduction
Parameter ST333C..C Units Conditions
IT(AV) Max. average on-state current 720 (350) A 180° conduction, half sine wave
@ Heatsink temperature 55 (75) °C double side (single side) cooled
IT(RMS) Max. RMS on-state current 1435 DC @ 25°C heatsink temperature double side cooled
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ST333C..C Series
Bulletin I25170 rev. B 04/00
On-state Conduction
Parameter ST333C..C Units Conditions
V TM Max. peak on-state voltage 1.96 ITM= 1810A, T J = TJ max, tp = 10ms sine wave pulse
V T(TO)1 Low level value of threshold
0.91 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
voltage V
V T(TO)2 High level value of threshold
0.93 (I > π x IT(AV)), TJ = TJ max.
voltage
rt 1 Low level value of forward
0.58 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
slope resistance
mΩ
r High level value of forward
t2 0.58 (I > π x IT(AV)), TJ = TJ max.
slope resistance
IH Maximum holding current 600 T J = 25°C, I T > 30A
mA
IL Typical latching current 1000 T J = 25°C, VA = 12V, Ra = 6Ω, I G = 1A
Switching
Parameter ST333C..C Units Conditions
di/dt Max. non-repetitive rate of rise TJ = TJ max, VDRM = rated VDRM
1000 A/µs
of turned-on current ITM = 2 x di/dt
TJ= 25°C, VDM = rated VDRM, ITM = 50A DC, tp= 1µs
t Typical delay time 1.1
d Resistive load, Gate pulse: 10V, 5Ω source
µs
Min Max TJ = TJ max, ITM = 550A, commutating di/dt = 40A/µs
tq Max. turn-off time 10 30 VR = 50V, tp = 500µs, dv/dt: see table in device code
Blocking
Parameter ST333C..C Units Conditions
dv/dt Maximum critical rate of rise of TJ = TJ max. linear to 80% VDRM, higher value
500 V/µs
off-state voltage available on request
IRRM Max. peak reverse and off-state
50 mA T J = TJ max, rated V DRM/V RRM applied
IDRM leakage current
Triggering
Parameter ST333C..C Units Conditions
PGM Maximum peak gate power 60
W T J = TJ max., f = 50Hz, d% = 50
PG(AV) Maximum average gate power 10
IGM Max. peak positive gate current 10 A TJ = TJ max, tp ≤ 5ms
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ST333C..C Series
Bulletin I25170 rev. B 04/00
∆RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Device Code
ST 33 3 C 08 C H K 1
1 2 3 4 5 6 7 8 9 10
1 - Thyristor
2 - Essential part number
3 - 3 = Fast turn off
4 - C = Ceramic Puk
5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table)
6 - C = Puk Case TO-200AB (E-PUK) dv/dt - tq combinations available
7 - Reapplied dv/dt code (for tq test condition) dv/dt (V/µs) 20 50 100 200 400
8 - tq code 10 CN DN EN -- --
12 CM DM EM FM * --
9 - 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads) 15 CL DL EL FL * HL
tq (µs)
1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads) 18 CP DP EP FP HP
20 CK DK EK FK HK
2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads) 25 -- -- -- FJ HJ
30 -- -- -- -- HH
3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads)
10 - Critical dv/dt: *Standard part number.
All other types available only on request.
None = 500V/µsec (Standard value)
L = 1000V/µsec (Special selection)
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ST333C..C Series
Bulletin I25170 rev. B 04/00
Outline Table
ANODE TO GATE
CREEPAGE DISTANCE: 11.18 (0.44) MIN.
STRIKE DISTANCE: 7.62 (0.30) MIN.
25.3 (0.99)
14.1 / 15.1
(0.56 / 0.59)
4.75 (0.19)
130 1 30
ST333C..C Series ST 3 3 3 C ..C S e rie s
120 (Single Side Cooled) 1 20
(Sin g le S id e C o o le d )
110 R th J- hs (DC) = 0.09 K/W 1 10 R th J-hs ( D C ) = 0 .0 9 K / W
100 1 00
90 90
80 C o nd uc tio n A ng le 80 Co nd uc tio n P e rio d
70 70
60 60
50 30° 50
30°
40 60° 40 6 0°
90° 90°
30 120° 30 12 0°
180° 1 80° DC
20 20
0 100 200 300 400 500 600 0 10 0 2 00 30 0 40 0 5 00 6 0 0 70 0 80 0 9 00
Average On -state Current (A) A v e ra g e O n -st a te C u rre n t (A )
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
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ST333C..C Series
Bulletin I25170 rev. B 04/00
130 130
ST 3 3 3 C ..C S e r ie s ST333C..C Series
120 (D o ub le Sid e C o o le d ) 120 ( Double Side Cooled )
110 R thJ-h s (D C ) = 0 .0 4 K /W 110 R th J-hs (DC) = 0.04 K/W
100 100
90 90
80
80 C o ndu ctio n Pe riod
70 C o nd uctio n A ng le
70
60
60 30°
50 30° 60°
40 60 ° 50 90°
90 °
30 40 120°
120° 30 180°
20
180° DC
10 20
0 2 00 4 00 60 0 800 1 00 0 0 200 400 600 800 1000 1200 1400 1600
2 2 00 26 0 0
M a x im um A v e r a g e O n - st a t e Po w e r L o ss (W )
2 0 00 24 0 0 DC
1 80°
22 0 0 180°
1 8 00 1 20°
20 0 0 120°
90°
1 6 00 90°
60° 18 0 0 60°
1 4 00 30° R M S Lim it 16 0 0 30° R M S L im it
1 2 00 14 0 0
1 0 00 12 0 0
8 00 10 0 0
C o ndu ctio n A ng le 800 C o ndu ctio n Pe rio d
6 00
600
4 00 S T3 3 3 C ..C Se rie s
ST 3 3 3 C ..C S e r ie s 400
2 00 TJ = 1 2 5 °C 200 T J = 1 2 5 °C
0 0
0 20 0 400 60 0 80 0 1 00 0 0 20 0 4 0 0 6 0 0 8 0 0 1 0 00 1 2 00 14 0 0 1 60 0
A v e ra g e O n -st a t e C u rre n t (A ) A v e ra g e O n -st a t e C u rre n t (A )
Fig. 5 - On-state Power Loss Characteristics Fig. 6 - On-state Power Loss Characteristics
10000 12000
Peak Half Sine Wave O n-state Curren t (A)
Peak Half Sine W ave O n-state Current (A)
At An y Rated L oad Con dition And W ith Maxim um Non Repetitive Surge Current
9500 Rated VRR M Applied Following Surge. V ersus Pulse Train Duration. C ontrol
In itial TJ = 125°C 11000
9000 O f Con duction May Not Be M ain tained.
@ 60 Hz 0.0083 s Initial TJ = 125°C
8500 10000
@ 50 Hz 0.0100 s No Voltage Reapplied
8000 9000 Rated VRR M Reapplied
7500
8000
7000
6500 7000
6000 6000
5500
ST333C..C Series 5000 ST333C..C Series
5000
4500 4000
1 10 100 0.01 0.1 1
N um b e r O f E q ual A m plitud e Half C yc le C urrent Pulse s (N ) Pulse T rain Duration (s)
Fig. 7 - Maximum Non-repetitive Surge Current Fig. 8 - Maximum Non-repetitive Surge Current
Single and Double Side Cooled Single and Double Side Cooled
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ST333C..C Series
Bulletin I25170 rev. B 04/00
10000 0 .1
S T3 3 3 C ..C Se r ie s
T = 25°C
1000 J 0 .0 1 S te a d y St a t e V a lu e
T = 125°C R th J-hs = 0 .0 9 K /W
J
(S in gle Sid e C o o le d )
R thJ-h s = 0 .0 4 K /W
(D o u b le S id e C o o le d )
ST333C..C Series (D C O p e ra t io n )
100 0 .0 0 1
0.5 1 1.5 2 2. 5 3 3. 5 4 4.5 5 5.5 6 6.5 0 .0 0 1 0 .0 1 0. 1 1 10
Instan tan eous O n-state V oltage (V) Sq u a re W a v e P u ls e D ur at io n (s)
Fig. 9 - On-state Voltage Drop Characteristics Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
320 180
Maximum Reverse Recovery Charge - Q rr (µC)
I TM = 50 0 A I T M = 5 00 A
300
3 00 A 160 3 00 A
280 2 00 A 20 0 A
10 0 A 1 00 A
260 140
50 A 50 A
240
120
220
200 100
180
80
160
140 60 ST 3 3 3 C ..C S e rie s
ST333C..C Series TJ = 1 2 5 ° C
120
TJ = 125 °C 40
100
80 20
10 20 30 40 50 60 70 80 90 100 10 20 30 40 50 60 70 80 9 0 1 00
Rate O f Fall O f O n-state Current - di/dt (A/µs) R a te O f Fa ll O f Fo rw a rd C ur re n t - d i/ d t (A /µ s)
Fig. 11 - Reverse Recovered Charge Characteristics Fig. 12 - Reverse Recovery Current Characteristics
1 E4
P e a k O n -st a te C u rre n t (A )
50 0 4 00 20 0 1 00 50 Hz 4 00 20 0 1 00
50 0 50 H z
1 000 1 000
1 50 0
15 0 0
Snubb er c ircu it
25 00 Snubb er circ uit
1 E3 R s = 1 0 o hm s 2 50 0
R s = 1 0 o hm s
C s = 0 .47 µF
3 00 0 C s = 0.4 7 µF
V D = 80 % V D RM 3 00 0 V D = 80 % V D RM
50 00
ST33 3 C..C Serie s 5 00 0 ST33 3C ..C Serie s
Sin uso idal pulse Sinuso idal pulse
tp T C = 40°C tp T C = 55°C
1 E2
1 E1 1E2 1E3 1 E14E 41 E1 1E 1 1E2 1E3 1E4
P ulse B a se w id th (µ s) Pu lse B a se w id th (µ s)
Fig. 13 - Frequency Characteristics
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ST333C..C Series
Bulletin I25170 rev. B 04/00
1E4
Snubbe r circ uit
R s = 1 0 o hm s
C s = 0.4 7 µF
P e a k O n - st a t e C ur re n t (A )
V D = 80 % V D RM
40 0 2 00 10 0 50 Hz
50 Hz
100 0 50 0 10 0
40 0 2 00
15 00 10 00 50 0
20 0 0 Snubbe r circuit
1E3 1 5 00
R s = 1 0 o hm s
2 5 00 20 00
C s = 0.47 µF
3 0 00 V D = 80 % V D RM 2 50 0
3 00 0 ST33 3C. .C Se ries
ST3 33 C.. C Se ries Trapezo idal p ulse
5 00 0 Trap ezo id al p ulse T C = 55 °C
TC = 4 0°C tp
50 00 di/dt = 1 00A /µs
tp di/d t = 50 A/µs
1E2
1 E1 1E2 1E3 1 E14E 41 E1 1E 1 1 E2 1 E3 1 E4
P u lse Ba se w id t h (µ s) P u lse Ba se w id th (µs)
1 E4
Snubbe r circ uit
R s = 1 0 o hm s
C s = 0.4 7 µF
P e a k O n - st a te C u rre n t (A )
V D = 80 % V DR M
5 0 Hz
4 00 200 10 0 4 00 2 00 10 0 5 0 Hz
5 00
100 0 50 0
15 00 10 0 0
1 E3 Snubb er c ircuit
20 00 R s = 10 o hm s 1 50 0
C s = 0 .47 µ F 20 00
2 50 0
V D = 80 % V D RM 2 50 0
3 00 0
ST33 3 C..C Serie s 3 00 0 ST333 C.. C Se ries
Trape zoidal pulse Trapezo id al p ulse
50 00 T C = 40°C TC = 55 °C
tp 5 00 0 tp
d i/dt = 100 A/µs di/dt = 10 0A /µs
1 E2
1 E1 1 E2 1E3 1 E14E 4 1 E11E 1 1E 2 1 E3 1 E4
P u lse B ase w id t h (µ s) P u lse Ba se w id th (µ s)
Fig. 15 - Frequency Characteristics
1E4
20 jo ule s pe r p ulse ST3 33 C Se ries
10 Rec tang ula r pulse 2 0 jou les p er pulse
5 10
3 di/dt = 50A /µs
tp
P e a k O n - sta t e C u rre n t (A )
2 5
1 3
1E3 2
0.5
1
0 .3
0 .5
0.2
0.4
0.3
1E2
0.2
ST33 3C ..C Se ries
Sinuso idal pulse
tp
1E1
1E1 1E2 1E3 1 E14E 4 1 E11E 1 1E2 1 E3 1E4
P u lse B ase w id t h (µ s) P u lse Ba se w id t h (µ s)
Fig. 16 - Maximum On-state Energy Power Loss Characteristics
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ST333C..C Series
Bulletin I25170 rev. B 04/00
1 00
Re c t a n g ula r g a t e p u lse (1) PGM = 1 0W , tp = 20 m s
a ) R e c o m m e n d e d lo a d lin e fo r (2) PGM = 2 0W , tp = 10 m s
In st a n ta n e o u s G at e V o lt a ge ( V )
Tj=- 40 °C
Tj=25 °C
Tj=12 5 °C
1
(1) (2) (3 ) ( 4 )
VGD
IG D
D e v ic e : ST 3 3 3 C ..C Se rie s Fre q u e n c y L im ite d b y P G (A V )
0 .1
0 .0 0 1 0 .0 1 0 .1 1 10 1 00
In sta n t a n e o u s G at e C u rr e n t ( A )
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