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Spintronics
1. Introduction:
Conventional electronic devices rely on the transport of electrical charge carriers –electrons in a
semiconductor such as silicon. Now, however, physicists are trying to exploit the ‘spin’ of the
electron rather than its charge to create a remarkable new generation of ‘spintronic’ devices
which will be smaller, more versatile and more robust than those currently making up silicon
chips and circuit elements.
Imagine a data storage device of the size of an atom working at a speed of light. Imagine a
computer memory thousands of times denser and faster than today’s memories and also imagine
a scanner technique which can detect cancer cells even though they are less in number. The
above-mentioned things can be made possible with the help of an exploding science –
“Spintronics”.
Spintronics is a technology which deals with spin dependent properties of an electron instead of
or in addition to its charge dependent properties. Conventional electronics devices rely on the
transport of electric charge carries-electrons. But there is other dimensions of an electron other
than its charge and mass i.e. spin. This dimension can be exploited to create a remarkable
generation of spintronic devices. It is believed that in the near future spintronics could be more
revolutionary than any other technology.
As there is rapid progress in the miniaturization of semiconductor electronic devices leads to a
chip features smaller than 100 nanometers in size, device engineers and physicists are inevitable
faced with a looming presence of a quantum property of an electron known as spin, which is
closely related to magnetism. Devices that rely on an electron spin to perform their functions
form the foundations of spintronics.
Information-processing technology has thus far relied on purely charge based devices ranging
from the now quantum, vacuum tube today’s million transistor microchips. Those conventional
electronic devices move electronic charges around, ignoring the spin that tags along that side on
each electron.
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2. Basic Principle:
The basic principle involved is the usage of spin of the electron in addition to mass and charge of
electron. Electrons like all fundamental particles have a property called spin which can be
orientated in one direction or the other – called ‘spin-up’ or ‘spin-down’ –like a top spinning
anticlockwise or clockwise. Spin is the root cause of magnetism and is a kind of intrinsic angular
momentum that a particle cannot gain or lose. The two possible spin states naturally represent
‘0’and ‘1’in logical operations. Spin is the characteristics that makes the electron a tiny magnet
complete with north and south poles .The orientation of the tiny magnet ‘s north-south poles
depends on the particle’s axis of spin.
Fundamentals of spin:
1. In addition to their mass, electrons have an intrinsic quantity of angular momentum
called spin, almost of if they were tiny spinning balls.
2. Associated with the spin is magnetic field like that of a tiny bar magnet lined up with
the spin axis
.
Fig.1. Electron spinning
3. Scientists represent the spin with a vector. For a sphere spinning “west to east”, the
vector points “north” or “up”. It points “south” or “down” for the spin from “east to west”.
4. In a magnetic field, electrons with “spin up” and “spin down” have different energies.
5. In an ordinary electronic circuit the spins are oriented at random and have no effect
on current flow.
6. Spintronic devices create spin-polarized currents and use the spin to control current
flow.
Imagine a small electronically charged sphere spinning rapidly. The circulating charges in the
sphere amount to tiny loops of electric current which creates a magnetic field. A spinning sphere
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in an external magnetic field changes its total energy according to how its spin vector is aligned
with the spin. In some ways, an electron is just like a spinning sphere of charge, an electron has a
quantity of angular momentum (spin) an associated magnetism. In an ambient magnetic field and
the spin changing this magnetic field can change orientation. Its energy is dependent on how its
spin vector is oriented. The bottom line is that the spin along with mass and charge is defining
characteristics of an electron. In an ordinary electric current, the spin points at random and plays
no role in determining the resistance of a wire or the amplification of a transistor circuit.
Spintronic devices in contrast rely on the differences in the transport of spin-up and spin-down
electrons.
The magneto resistant devices can sense the changes in the magnetic field only to a small extent,
which is appropriate to the existing memory devices. When we reduce the size and increase data
storage density, we reduce the bits, so our sensor also has to be small and maintain very, very
high sensitivity. The thought gave rise to the powerful effect called “Giant Magnetoresistance”
(GMR). GMR is a quantum mechanical magnetoresistance effect observed in thin film structures
composed of alternating ferromagnetic and non magnetic layers. The 2007 Nobel Prize in
physics was awarded to Albert Fert and Peter Grünberg for the discovery of GMR.
Giant magnetoresistance (GMR) came into picture in 1988, which lead the rise of spintronics. It
results from subtle electron-spin effects in ultra-thin ‘multilayer’ of magnetic materials, which
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cause huge changes in their electrical resistance when a magnetic field is applied. GMR is 200
times stronger than ordinary magnetoresistance. It was soon realized that read heads
incorporating GMR materials would be able to sense much smaller magnetic fields, allowing the
storage capacity of a hard disk to increase from 1 to 20 gigabits.
GMR has triggered the rise of a new field of electronics called spintronics which has been used
extensively in the read heads of modern hard drives and magnetic sensors. A hard disk storing
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binary information can use the difference in resistance between parallel and antiparallel layer
alignments as a method of storing 1s and 0s.
A high GMR is preferred for optimal data storage density. Current perpendicular-to-plane
(CPP) Spin valve GMR currently yields the highest GMR. Research continues with older
current-in-plane configuration and in the tunnelling magnetoresistance (TMR) spin valves which
enable disk drive densities exceeding 1 Terabyte per square inch.
Hard disk drive manufacturers have investigated magnetic sensors based on the colossal
magnetoresistance effect (CMR) and the giant planar Hall effect. In the lab, such sensors have
demonstrated sensitivity which is orders of magnitude stronger than GMR. In principle, this
could lead to orders of magnitude improvement in hard drive data density. As of 2003, only
GMR has been exploited in commercial disk read-and-write heads because researchers have not
demonstrated the CMR or giant planar hall effects at temperatures above 150K.
Magnetocoupler is a device that uses giant magnetoresistance (GMR) to couple two electrical
circuits galvanicly isolated and works from AC down to DC.
Detecting DNA or protein binding to capture molecules in a surface layer by measuring the stray
field from superparamagnetic label particles.
4. Spintronic Devices:
Spintronic devices are those devices which use the Spintronic technology. Spintronic-devices
combine the advantages of magnetic materials and semiconductors. They are expected to be non-
volatile, versatile, fast and capable of simultaneous data storage and processing, while at the
same time consuming less energy. Spintronic-devices are playing an increasingly significant role
in high-density data storage, microelectronics, sensors, quantum computing and bio-medical
applications, etc.
Some of the Spintronic devices are
• Magnetoresistive Random Access Memory(MRAM)
• Spin Transistor
• Quantum Computer
• Spintronic Scanner
4.1 MRAM (Magnetoresistive Random access Memory)
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An important spintronic device, which is supposed to be one of the first spintronic devices that
have been invented, is MRAM.
Unlike conventional random-access, MRAMs do not lose stored information once the power is
turned off...A MRAM computer uses power, the four page e mail will be right there for you.
Today pc use SRAM and DRAM both known as volatile memory. They can store information
only if we have power. DRAM is a series of
Capacitors, a charged capacitor represents 1 where as an uncharged capacitor represents 0. To
retain 1 you must constantly feed the capacitor with power because the charge you put into the
capacitor is constantly leaking out.
MRAM is based on integration of magnetic tunnel junction (MJT). Magnetic tunnel junction is a
three-layered device having a thin insulating layer between two metallic ferromagnets. Current
flows through the device by the process of quantum tunneling; a small number of electrons
manage to jump through the barrier even though they are forbidden to be in the insulator. The
tunneling current is obstructed when the two ferromagnetic layers have opposite orientations and
is allowed when their orientations are the same. MRAM stores bits as magnetic polarities rather
than electric charges. When a big polarity points in one direction it holds1, when its polarity
points in other direction it holds 0. These bits need electricity to change the direction but not to
maintain them. MRAM is non volatile so, when you turn your computer off all the bits retain
their 1`s and 0`s.
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Vgg
InAlAs
InGaAs
Hence the net spin polarization is reduced. In order to solve this problem an electric field is
applied perpendicularly to the plane of the film by depositing a gate electrode on the top to
reduce the spin-orbit coupling effect as illustrated in Figure 4. By controlling the gate voltage
and polarity can the current in the collector can be modulated there by mimicking the MOSFET
of the conventional electronics. Here again the problem of conductivity mismatch between the
source and the transmitting layer is an important issue. The interesting thing would be if a
Heusler alloy is used as the spin source and a semimetallic Heusler alloy as the transmitting
layer, the problem of conductivity mismatch may be solved. For example from the Slater-Pauling
curve Mt = Zt - 24, Heusler alloys with Mt >>0 can act as spin sources and alloys with Mt ~ 0
can act as semimetals. Since both the constituents are of same structure the possibility of
conductivity mismatch may be less.
Traditional transistors use on-and-off charge currents to create bits—the binary zeroes and ones
of computer information. “Quantum spin field effect” transistor will use up-and-down spin states
to generate the same binary data. One can think of electron spin as an arrow; it can point upward
or downward; “spin-up and spin-down can be thought of as a digital system, representing the
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binary 0 and 1. The quantum transistor employs also called “spin-flip” mechanism to flip an up-
spin to a downspin, or change the binary state from 0 to 1.
One proposed design of a spin FET (spintronic field-effect transistor) has a source and a drain,
separated by a narrow semi conducting channel, the same as in a conventional FET.
In the spin FET, both the source and the drain are ferromagnetic. The source sends spin-
polarized electrons in to the channel, and this spin current flow easily if it reaches the drain
unaltered (top). A voltage applied to the gate electrode produces an electric field in the channel,
which causes the spins of fast-moving electrons to process, or rotate (bottom). The drain impedes
the spin current according to how far the spins have been rotated. Flipping spins in this way takes
much less energy and is much faster than the conventional FET process of pushing charges out
of the channel with a larger electric filed.
One advantage over regular transistors is that these spin states can be detected and altered
without necessarily requiring the application of an electric current. This allows for detection
hardware that are much smaller but even more sensitive than today's devices, which rely on
noisy amplifiers to detect the minute charges used on today's data storage devices. The potential
end result is devices that can store more data in less space and consume less power, using less
costly materials. The increased sensitivity of spin transistors is also being researched in creating
more sensitive automotive sensors, a move being encouraged by a push for more
environmentally-friendly vehicles
A second advantage of a spin transistor is that the spin of an electron is semi-permanent and can
be used as means of creating cost-effective non volatile solid state storage that does not require
the constant application of current to sustain. It is one of the technologies being explored for
Magnetic Random Access Memory (MRAM)
Spin transistors are often used in computers for data processing. They can also be used to
produce a computer's random access memory and are being tested for use in magnetic RAM.
This memory is superfast and information stored on it is held in place after the computer is
powered off, much like a hard disk.
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Electronic Devices Spintronic devices
1. Based on properties of charge of the electron 1. Based on intrinsic property spin of electron
Although quantum computing is still in its infancy, experiments have been carried out in which
quantum computational operations were executed on a very small number of qubits (quantum
bits). Both practical and theoretical research continues, and many national government and
military funding agencies support quantum computing research to develop
quantum computers for both civilian and national security purposes, such as cryptanalysis.
If large-scale quantum computers can be built, they will be able to solve certain problems much
faster than any current classical computers. All problems solvable with a quantum computer can
also be solved using a traditional computer given enough time and resources.
In a quantum computer, the fundamental unit of information (called a quantum bit or qubit), is
not binary but rather more quaternary in name. This qubit property arises as a direct consequence
of its adherence to the laws of quantum mechanics. A qubit can exist not only in a state
corresponding to the logical state 0 or 1 as in a classical bit, but also in states corresponding to a
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blend or superposition of these classical states. In other words, a qubit can exist as a zero, a one
or simultaneously as both 0 and 1, with a numerical coefficient representing the probability for
each state.
Each electron spin can represent a bit; for instance, a 1 for spin up and 0 for spin down. With
conventional computers, engineers go to great lengths to ensure that bits remain in stable, well-
defined states. A quantum computer, in contrast, lies on encoding information within quantum
bits, or qubits, each of which can exist in a superposition of 0 and 1. By having a large number of
qubits in superposition of alternative states, a quantum computer intrinsically contains a massive
parallelism. Unfortunately, in most physical systems, interactions with the surrounding
environment rapidly disrupt these superposition states. A typical disruption would effectively
change a superposition of 0 and 1 randomly into either a 0 or a 1, as process called decoherence.
State-of-the-art qubits based on the charge of electrons in a semiconductor remain coherent for a
few picoseconds at best and only at temperatures too low for practical applications. The rapid
decoherence occurs because the electric force between charges is strong and long range.
Spintronic Qubits
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1. In a conventional computer every bit has a definite value of 0 or 1. A series of eight bits
can represent any number from 0 to 255, but only one number at a time.
2. Electron spins restricted to spin up and spin down could be used as bits.
3. Quantum bits, or qubits, can also exist as super positions of 0 and 1, in effect being both
numbers at once. Eight qubits can represent every number from 0 to 255 simultaneously.
4. Electron spins are natural qubits; tilted electrons is a coherent superposition of spin up
and spin down and is less fragile than other quantum electronic states.
5. Qubits are extremely delicate: stray interactions with their surroundings degrade the
superposition extremely quickly, typically converting them in to random ordinary bits.
While a classical three-bit state and a quantum three-qubit state are both eight-
dimensional vectors, they are manipulated quite differently for classical or quantum
computation. For computing in either case, the system must be initialized, for example into the
all-zeros string, corresponding to the vector (1, 0, 0,0,0,0, 0, and 0). In classical
randomized computation, the system evolves according to the application of stochastic matrices,
which preserve that the probabilities add up to one (i.e., preserve the L1 norm). In quantum
computation, on the other hand, allowed operations are unitary matrices, which are effectively
rotations (they preserve that the sums of the squares add up to one, the Euclidean or L2 norm).
(Exactly what unitaries can be applied depend on the physics of the quantum device.)
Consequently, since rotations can be undone by rotating backward, quantum computations
are reversible. (Technically, quantum operations can be probabilistic combinations of unitaries,
so quantum computation really does generalize classical computation. See quantum circuit for a
more precise formulation.)
Finally, upon termination of the algorithm, the result needs to be read off. In the case of a
classical computer, we sample from the probability distribution on the three-bit register to obtain
one definite three-bit string, say 000. Quantum mechanically, we measure the three-qubit state,
which is equivalent to collapsing the quantum state down to a classical distribution (with the
coefficients in the classical state being the squared magnitudes of the coefficients for the
quantum state, as described above) followed by sampling from that distribution. Note that this
destroys the original quantum state. Many algorithms will only give the correct answer with a
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certain probability; however by repeatedly initializing, running and measuring the quantum
computer, the probability of getting the correct answer can be increased.
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Rb. Free electrons diffuse under the action of an electric field through Rb vapour that has been
spin polarized in optical pumping. Through spin exchange collisions with the Rb, the free
electrons become polarized and are extracted to form a beam. To reduce the emission of
depolarizing radiation, N2 is used to quench the excited Rb atoms during the optical pumping
cycle.
4.4.2 Spin detectors:
There are many ways by which the spin of the electrons can be detected efficiently. The spin
polarization of the electron beam can be analyzed by using:
(a)Mott polarimeter
(b)Compton polarimeter
(c)Moller type polarimeter
Typical Mott polarimeters require electron energies of ~100 kV. But Mini Mott polarimeter uses
energies of ~25 keV, requiring a smaller overall design. The Mini Mott polarimeter
has three major sections: the electron transport system, the target chamber, and the detectors. The
first section the electrons enter is the transport system. An Einsel lens configuration was used
here. Two sets of four deflectors were used as the first and last lens. The electrons next enter the
target chamber. The chamber consists of a cylindrical target within a polished stainless steel
hemisphere. A common material used for the high-Z nuclei target is gold. Low-Z nuclei help
minimize unwanted scattering, so aluminum was chosen. Scattered electrons then exit the target
chamber and are collected in the detectors. Thus there are many methods for detecting the spin
polarization of electrons.
4.4.3 External Magnetic Field:
An external magnetic field is required during this experiment. The magnetic field is applied after
the surgery has undergone. First, it is applied to an unaffected part of the body and then to the
surgery undergone part of the body. It is already mentioned that the magnetic field could easily
alter the polarization of electrons.
This technique using spintronics is suggested by us to identify tumor cells after surgery.
The procedure for doing this experiment is as follows:
Optical Spin Filter:
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After surgery and the removal of the tumor, the patient is exposed to a strong magnetic field.
Now the polarized electron beam is applied over the unaffected part and spin orientation of
electrons are determined using polarimeter. Then the same polarized beam is targeted over the
affected part of the body and from the reflected beam, change in spin is determined. Based on
these two values of spin orientation, the presence of tumor cells can be detected even if they are
very few in number. Hence, we suggest this method for the detection purpose. A detailed view of
this innovative approach is given as follows.
Inference:
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If the change in the spin in the unaffected part of the body is same as that of the surgery
undergone part, i.e.
If Sx=Sy
Then,
There are no cancer cells in the surgery undergone part of the body and all the cells have
been removed by the surgery.
If the change in spin in the unaffected part is not equal to the change caused by the surgery
undergone part of the body, i.e.
If Sx not equals Sy
Then,
There are some cancer cells in the surgery undergone part of the body and the cancer cells are
not completely removed by the surgery.
5. Conclusion:
So with this paper we have proved that the new generation of computing and information
technology is on its way to revolutionize the 21st century. We believe it makes sense instead to
build on the extensive foundations of conventional electronic semiconductor technology; we
exploit the spin of the electron and create new devices and circuits, which could be more
beneficial. Spintronics, which depend on the spin of the electron, has a great potential of
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spinning this global village into an unexpected digital atomic world which has a capability of
manipulating at atomic level. This would make things smaller and cheaper and more affordable
by a common man. What ever may be the discovery or invention made will have its worth
forever only if it finds its use in common man’s life. We wish and hope spintroincs will have it’s
into common man’s life.
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