Die Deprocessing / Wet Etching Recipes - Page 1 of 2: Aluminum to Pol... http://www.siliconfareast.com/etch_recipes.

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Wet Etching Recipes (Page 1 of 2)
Die Deprocessing
Material to be Etched Chemicals Ratio Comments
Wet Etching
Hazardous Chemicals H3PO4 : Water : Acetic Acid PAN Etch;
Aluminum (Al) 16:2:1:1 200 nm/min @ 25 C;
Fab Chem. Reactions : HNO3
600 nm/min @ 40 C
may be used at 25 C but
Aluminum (Al) NaOH : Water 1:1 etches faster at a higher
temperature
Aluminum (Al) H3PO4 --- must be heated to 120 C
Chromium (Cr) HCl : Water 3:1 ---
Photo Chemical
Etching Chromium (Cr) HCl:Glycerin 1:1 ---
Precision & Copper (Cu) HNO3 : Water 5:1 ---
decorative
Copper (Cu) Ammonium Persulphate --- ---
chemically etched
custom metal parts. 115 g : 65 g :
Gold (Au) KI : I : Water ---
www.photofabrication.com 100 ml

HCl : HNO3 Aqua Regia;

Gold (Au) 3:1
discard after use
Iron (Fe) HCl : Water 1:1 ---
Thin Metal Etching
Iron (Fe) HNO3 : Water 1:1 ---
SS, Copper, Brass,
NiTi, Ti, etc. for dissolving solder
Lead (Pb) Acetic Acid : H2O2 1:1
.0001"-.060" Low connections
Cost, Quick-Turn Lead (Pb) Acetic Acid : H2O2 : Water 2:2:5 ---
www.kemactech.com
Molybdenum (Mo) HCl : H2O2 1:1 ---
Molybdenum (Mo) H2SO4 : HNO3 : Water 1:1:1 ---
Nichrome H2SO4 --- use at 100 C
Metal HCl : HNO3 : Water
Nichrome 1:1:3 ---
Photoetching
Photofabrication & Nickel (Ni) HCl : HNO3 5:1 ---
chemical etching HF: HNO3
Nickel (Ni) 1:1 ---
3D metal forming
www.elcon-inc.com Aqua Regia;
Palladium (Pd) HCl : HNO3 3:1
discard after use
Platinum (Pt) HCl : HNO3 : Water 3:1:4 use at 95 C
age for 1 hour;
Platinum (Pt) HCl : HNO3 8:1
Wafers Built to use at 70 C
Order remove oxide first;
Polysilicon (Si) HNO3 : Water : HF 50:20:1
Provider of all sizes, 540 nm/min @ 25C
Custom Specs remove oxide first;
Silicon Wafers. Polysilicon (Si) HNO3 : HF 3:1 high etch rate:
Metal Layers, Oxide 4.2 micron/min
www.surfaceprocess.com Reference: Failure and Yield Analysis Handbook, Technology Associates

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Die Deprocessing / Wet Etching Recipes - Page 2 of 2: Silicon to Vana... http://www.siliconfareast.com/etch_recipes2.htm

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Wet Etching Recipes (Page 2 of 2)
Die Deprocessing
Material to be Etched Chemicals Ratio Comments
Wet Etching
Hazardous Chemicals Silicon (Si) HF : HNO3 : Water 2:2:1 ---
Fab Chem. Reactions Silicon (Si) HNO3: HF : Acetic Acid 5:3:3 ---
for dissolving the die from the
package to allow inspection of
Silicon (Si) NaOH in Water --- eutectic die attach;
16 hours @ a temperature
near boiling point
Silicon dioxide (SiO2)- Buffered HF;
Thin Metal Etching NH4F:HF 6:1
thermally grown 120 nm/min @ 25 C
SS, Copper, Brass,
NiTi, Ti, etc. Silicon dioxide (SiO2)- slower etch;
HF : Water 1:10
.0001"-.060" Low thermally grown 30 nm/min @ 25 C
Cost, Quick-Turn Silicon dioxide (SiO2)- very slow etch;
HF : Water 1:100
www.kemactech.com thermally grown 1.8 nm/min @ 25 C
Silicon dioxide (SiO2)- very rapid etch;
HF ---
thermally grown 1.8 microns/min @ 25 C

Photo Chemical Silicon dioxide (SiO2)-

HF : Water 1:10 ---
Etching CVD
Precision & Silicon dioxide (SiO2)-
decorative HF : Water 1:10 ---
Phosphorus-doped
chemically etched use at 180C;
custom metal parts. 6.5 nm/min @ 25 C;
www.photofabrication.com Silicon nitride (Si3N4) refluxing phosphoric acid --- will also etch Al rapidly;
plasma etching is preferred for
removing Si3N4
Silver (Ag) NH4OH : H2O2 1:1 rapid etch
Ceramic
Metallization Silver (Ag) HNO3 : Water 1:1 ---
Thick film Tantalum (Ta) HF : HNO3 : Water 2:2:5 ---
metallization Part
Tin (Sn) HF : HNO3 1:1 ---
assembly & brazing
www.elcon-inc.com Tin (Sn) H2SO4 --- use at 80 C
Titanium (Ti) HF : H2SO4 : Water 1:30:69 use at 70 C
Titanium-Tungsten very selective;
Free Sample H2O2 ---
(TiW) 5 nm/min @ 25 C
Processing
Tungsten (W) HF : HNO3 1:1 ---
Plasma Etching &
Cleaning Systems Vanadium (Va) HF : HNO3 : Water 1:1:1 ---
Reliable;
Reference: Failure and Yield Analysis Handbook, Technology Associates
Repeatable;
Affordable
www.PlasmaEtch.com <Back to Page 1 - Etch Recipes for Aluminum to Polysilicon (Alphabetical)>

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