Small Signal BJT Models (5/21/00) Page 1

1.4 - SMALL SIGNAL MODEL OF THE BJT

INTRODUCTION
Objective
The objective of this presentation is:
1.) Concept of the small signal model
2.) The small signal model for the BJT
Outline
• Transconductance small signal model
• Input resistance, output resistance of the common emitter model
• Extensions of the small signal BJT model
• BJT frequency response

ECE 4430 - Analog Integrated Circuits and Systems  P.E. Allen, 2000
 Small Signal BJT Models (5/21/00) Page 2

TRANSCONDUCTANCE SMALL SIGNAL MODEL

Categorization of Electrical Models

Time Dependence

Time Independent Time Dependent

Linear Small-signal, midband Small-signal frequency

response - poles and
R in, A v, R out zeros
Linearity
(.TF) (.AC)

Nonlinear DC operating point Large-signal transient

iD = f(v D ,v G ,v S ,v B ) response - Slew rate
(.OP) (.TRAN)

Based on the simulation capabilities of SPICE.

ECE 4430 - Analog Integrated Circuits and Systems  P.E. Allen, 2000
 Small Signal BJT Models (5/21/00) Page 3

What is a Small Signal Model?

• A small signal model is a linear model which is independent of amplitude. It may or may not have time
dependence (i.e. capacitors).
• The small signal model for a nonlinear component such as a BJT is a linear model about some nominal
operating point. The deviations from the operating point are small enough that it approximates the
nonlinear component over a limited range of amplitudes.
Illustration of the pn diode:
iD iD
Small Signal
id Model

+ id
vD iD ID vd ID
-

vD
VD Time
vD

vd
Time

Fig.1.4-1

ECE 4430 - Analog Integrated Circuits and Systems  P.E. Allen, 2000
 Small Signal BJT Models (5/21/00) Page 4

BJT, Common-Emitter, Forward-Active Region

Effect of a small-signal input voltage applied to a BJT.

,,,,,,,,,,
Carrier
Emitter Concentration
iC = IC + ic
∆Qh

,,,,,,,
,,,,,,
,,,
Depletion
iB = IB + ib Region Collector
Depletion

,,,,,,,
,,,
vi Region
VCC np(0) = npo exp VBE+vbe
Vt ∆Qe

, ,,,
VBE IC+ic
np(0) = npo exp VBE
Vt
IC x
Emitter WB Collector
Base Fig.1.4-2

vi ⇒ ib ⇒ ic

ECE 4430 - Analog Integrated Circuits and Systems  P.E. Allen, 2000
 Small Signal BJT Models (5/21/00) Page 5

Transconductance of the Small Signal BJT Model

The small signal transconductance is defined as
diC | ∆ iC ic ic
gm ≡ dv Q = ∆ v =v =v ⇒ ic = g m v i
BE BE be i
The large signal model for iC is
vBE  d v B E IS V BE IC
iC = IS exp ⇒ gm =  |
I S exp V  = V exp V = V
Vt  dvBE t Q t t t

IC
∴ gm = V
t

Another way to develop the small signal transconductance

 V BE +vi  V BE  vi   vi   vi 1  vi  2 1  vi  3 
iC = IS exp V  = IS exp V  expV  = IC expV  ≈ IC1 + V + 2 V  + 6 V  + · · ·
 t   t   t  t  t  t  t 
But
iC = IC + ic
v i IC  v i  2 IC  v i  3 IC
∴ ic ≈ IC V + 2  V  + 6  V  + ··· ≈ V vi = gm vi
t  t  t t

ECE 4430 - Analog Integrated Circuits and Systems  P.E. Allen, 2000
 Small Signal BJT Models (5/21/00) Page 6

INPUT AND OUTPUT RESISTANCE SMALL SIGNAL MODEL

Input Resistance of the Small Signal BJT Model
In the forward-active region, we can write that
iC
iB = β
F
Small changes in iB and iC can be related as

d  iC 
∆ iB = di β ∆iC
C  F
The small signal current gain, βo, can be written as
∆ iC 1 ic
βo = ∆ i = =i
B d  iC  b
diC βF
Therefore, we define the small signal input resistance as
v i βovi βo
rπ ≡ i = i =g
b c m

βo
rπ = g
m

ECE 4430 - Analog Integrated Circuits and Systems  P.E. Allen, 2000
 Small Signal BJT Models (5/21/00) Page 7

Output Resistance of the Small Signal BJT Model

In the forward-active region, we can write that the small signal output conductance, go (ro = 1/go) is
diC | ∆ iC ic
go ≡ dv Q = ∆v =v ⇒ ic = govce
CE CE ce
The large signal model for iC , including the influence of vCE, is
 v C E vBE
iC = IS  1 +  exp
 VA  Vt
diC |  1 
VBE IC
go ≡
dvCE Q = IS V A  exp V t ≈ V A

VA
∴ ro =
IC

ECE 4430 - Analog Integrated Circuits and Systems  P.E. Allen, 2000
 Small Signal BJT Models (5/21/00) Page 8

Simple Small Signal BJT Model

Implementing the above relationships, ic = gmvi, ic = govce, and vi = rπib, into a schematic model gives,

C ib ic C
B C
+ +
B vi rπ gmvi ro vce B
- -
E E
E E
Fig. 1.4-3
Note that the small signal model is the same for either a npn or a pnp BJT.
Example:
Find the small signal input resistance, Rin, the output resistance, Rout, and the voltage gain of the
common emitter BJT if the BJT is unloaded (RL = ∞), vout/vin, the dc collector current is 1mA, the Early
voltage is 100V, and βο at room temperature.
IC 1mA 1 βo
gm =
V t 26mV 26 mhos or Siemans
= = R in = rπ = g = 100·26 = 2.6kΩ
m
V A 100V vout
R out = ro = I = 1mA = 100kΩ vin = -gm ro = - 26mS·100kΩ = -2600V/V
C

ECE 4430 - Analog Integrated Circuits and Systems  P.E. Allen, 2000
 Small Signal BJT Models (5/21/00) Page 9

EXTENSIONS OF THE SMALL SIGNAL BJT MODEL

Collector-Base Resistance of the Small Signal BJT Model
Recall the influence of V on the base width:

,, ,,,
Carrier Collector depletion
Concentration region widens due to a
change in vCE, ∆VCE

,, ,,,
Initial
Depletion

,, ,,,
Region
np(0) = npo exp vBE
Vt

,, ,,,
iC

iC+∆iC
x
Emitter WB Collector
Base Fig.1.3-6
∆WB
We noted that an increase in vCE causes and increase in the depletion width and a decrease in the total
minority-carrier charge stored in the base and therefore a decrease in the base recombination current, iB1.
This influence is modeled by a collector-base resistor, rµ, defined as
∆vCE ∆ vCE ∆ i C ∆ iC
r µ = ∆i = ∆i ∆i = r o ∆i ≈ βoro (lower limit if base current is all recombination current)
Β1 C Β1 Β1
In general, rµ ≥ 10 βoro for the npn BJT and about 2-5 βoro for the lateral pnp BJT.

ECE 4430 - Analog Integrated Circuits and Systems  P.E. Allen, 2000
 Small Signal BJT Models (5/21/00) Page 10

Base-Charging Capacitance of the Small Signal BJT Model

Consider changes in base-carrier concentrations once again.

,,,,,,,,,,
Carrier
Emitter Concentration
iC = IC + ic
∆Qh

,,,,,,,
,,,,,,
,,,
Depletion
iB = IB + ib Region Collector
Depletion

,,,,,,,
,,,
vi Region
VCC np(0) = npo exp VBE+vbe
Vt ∆Qe

, ,,,
VBE IC+ic
np(0) = npo exp VBE
Vt
IC x
Emitter WB Collector
Base Fig.1.4-2

The ∆vBE change causes a change in the minority carriers, ∆Qe = qe, which must be equal to the change in
majority carriers, ∆Qh = qh. This charge can be related to the voltage across the base, vi, as
qh = C bvi
where Cb is the base-charging capacitor and is given as
qh τ F i c IC
Cb = v = v = τF g m = τF V
i i t
W B2
The base transit time τF is defined as
2Dn

ECE 4430 - Analog Integrated Circuits and Systems  P.E. Allen, 2000
 Small Signal BJT Models (5/21/00) Page 11

Parasitic Elements of the BJT Small Signal Model

Typical cross-section of the npn BJT:
Collector Base Emitter
n+ emitter
n+ p+ rex
p- isolation Cje p- isolation
rb Cje
Ccs Cµ Ccs
rc3 Cµ p base

n collector rc1
rc2
n+ buried layer

p- substrate

p+ p p- ni n- n n+ Metal Fig.1.4-4

Cje = base-emitter depletion capacitance (forward biased)

Cµ0
Cµ = = collector-base depletion capacitance (reverse biased)
 v C Bm
1 -
 ψ0 
Resistances are all bulk ohmic resistances. Of importance are rb, rc, and rex. Also, rb is a function of IC.

ECE 4430 - Analog Integrated Circuits and Systems  P.E. Allen, 2000
 Small Signal BJT Models (5/21/00) Page 12

Complete Small Signal BJT Model

rµ

Cµ rc
B rb B' C
+
Cπ rπ v1 gmv1 ro Ccs
-

rex
E E
Fig. 1.4-5

The capacitance, Cπ, consists of the sum of Cje and Cb.

Cπ = Cje +Cb

ECE 4430 - Analog Integrated Circuits and Systems  P.E. Allen, 2000
 Small Signal BJT Models (5/21/00) Page 13

Example
Derive the complete small signal equivalent circuit for a BJT at IC = 1mA, V CB = 3V, and V CS = 5V.
The device parameters are Cje0 = 10fF, ne = 0.5, ψ0e = 0.9V, Cµ0 = 10fF, nc = 0.3, ψ0c = 0.5V, Ccs0 =
20fF, ns = 0.3, ψ0s = 0.65V, βo = 100, τF = 10ps, V A = 20V, rb = 300Ω, rc = 50Ω, rex = 5Ω, and rµ =
10βoro.
Solution
Because Cje is difficult to determine and usually an insignificant part of Cπ, let us approximate it as 2Cje0.
∴ Cje = 20fF
Cµ0 10fF Ccs0 20F
Cµ = = = 5.6fF and Ccs = = = 10.5fF
 V C Bne  3 0.3  V C Sns  5 0.3
 1+  1 +   1+  1 + 
 ψ0c   0.5  ψ 0s   0.65

IC 1mA
gm = Cb = τF gm = (10ps)(38mA/V) = 0.38pF
V t = 26mV = 38mA/V
∴ Cπ = Cb + Cje = 0.38pF+0.02pF = 0.4pF
βo V A 20V
rπ = rµ = 10βοro = 10·100·20kΩ = 20MΩ
gm = 100·26Ω = 2.6kΩ ro = I = 1mA = 20kΩ and
C

ECE 4430 - Analog Integrated Circuits and Systems  P.E. Allen, 2000
 Small Signal BJT Models (5/21/00) Page 14

FREQUENCY RESPONSE OF THE BJT

Transition Frequency, f T
fT is the frequency where the magnitude of the short-circuit, common-emitter current equal unity.
Circuit and model:
io Cµ
rb rc
+
ii Cπ rπ v1 gmv1 ro Ccs io
ii -

Fig.1.4-06

Assume that rc ≈ 0. As a result, ro and Ccs have no effect.

rπ Io (jω ) gm rπ βo
∴ V1 ≈ Io ≈ g m V 1 ⇒
1+ rπ(C π+C b)s Ii and = =
Ii(jω ) (C π+C b)s (C π+C b)s
1+ gm rπ gm 1+ β o gm
Io (jω ) βo
Now, β (jω ) = I (jω ) = (C π+C b)jω
i
1+ β o gm
At high frequencies,
gm gm 1 gm
β (jω ) ≈ jω (C +C ) ⇒ When | β(jω )| =1 then ω T = +C or
Cπ b
f T = 2π
Cπ+Cb
π b

ECE 4430 - Analog Integrated Circuits and Systems  P.E. Allen, 2000
 Small Signal BJT Models (5/21/00) Page 15

Illustration of the BJT Transition Frequency

β as a function of frequency:
|β(jω)|

1000
βo
100 -6dB/octave

10

1
ωT ω (log scale)
ωβ 0.1ωT
Fig.1.4-7

Note that the product of the magnitude and frequency at any point on the -6dB/octave curve is equal to ωT.
For example,
0.1 ωT x10 = ω T
In measuring ωT, the value of |β(jω)| is measured at some frequency less than ωT (say ωx) and ωT is
calculated by taking the product of |β(jωx)| and ωx to get ωT.

ECE 4430 - Analog Integrated Circuits and Systems  P.E. Allen, 2000
 Small Signal BJT Models (5/21/00) Page 16

Current Dependence of f T

1 C π Cµ Cb Cje Cµ Cje Cµ
Note that τT = ω = g + g = g + g + g = τF + g + g
Τ m m m m m m m
At low currents, the Cje and Cµ terms dominate causing τT to rise and ωT to fall.
At high currents, τT approaches τF which is the maximum value of ωT.
For further increases in collector current, ωT decreases because of high-level injection effects and the
Kirk effect.
Typical frequency dependence of fT:

fT (GHz)
10

6
4
2

0 IC
10µA 100µA 1mA 10mA Fig.1.4-8

ECE 4430 - Analog Integrated Circuits and Systems  P.E. Allen, 2000