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  • Triac bt136b - 600e Mini J

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    Eduardo Arriagada Martinez
    9 Ansichten6 Seiten
    electronic switch mini junior

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    triac bt136b -600e mini j

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    electronic switch mini junior

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    9 Ansichten6 Seiten

    Triac bt136b - 600e Mini J

    Hochgeladen von

    Eduardo Arriagada Martinez
    electronic switch mini junior

    Copyright:

    © All Rights Reserved
    Als PDF herunterladen oder online auf Scribd lesen
    Markieren Sie unangemessene Inhalte
    von 6
    216r2024 PDR js viewor Philips Semiconductors Product specification Triacs BT136B series E sensitive gate GENERAL DESCRIPTION QUICK REFERENCE DATA Glass_passivated, sensitive gate [ SYMBOL] PARAMETER triacsinaplasticenvelope suitable for. | |————|——| surface mounting, intended for use in BT136B- | 500E | 600E | 800E general purpose bidirectional | Vorw Repetitive peak off-state ‘500 | 600 | 800 | v Switching ‘and phase control voltages applications, where high sensitivity is | Inq) | RMS on-state current a}a]lala required in all four quadrants. ks Non-repetitive peak on-state | 25 | 25 | 25 | A current PINNING - SOT404 PIN CONFIGURATION SYMBOL PIN DESCRIPTION —— a = 1 |main terminal 1 + 2 |main terminal 2 72 << a =a . 3 gate + b terminal 2 mb_|main terminal U é LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). ‘SYMBOL [PARAMETER CONDITIONS: MIN, MAX UNIT 500 | -600 | -800 Voen | Repetitive peak offstate - | 500' | 600" | ‘00 | v voltages hhyess) [RMS on-state currant | full sine wave; Ta. < 107°C - 4 A KS Non-repeiitive peak full sine wave: T/= 25 °C prior to on-state current surge 0 ms - 25 A 18.7 ms : 27 A rt Pt for fusing 10 ms - 34 As dhidt Repetitive rate of rise of |ln.=8 A: lo = 0.2 A on-state current after |dlyldt = 0.2 Alz triggering TaeGe | - 50 Aas Tae |: 50 Ass a 50 Ales T2G+ |: 10 Aas low Peak gate current 2 2 ‘A Vou oak gate voltage = 5 Vv Pou Peak gate power : 5 w Pen [Average gate power over any 20 ms period 0s w Tes Storage temperature 150 ic T Operating junction 2 125 c temperature 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on.state. The rate of rise of current should nat exceed 3 Als. March 1997 1 Rev 1.000 hitps:iptalldatasheet comidatasheet-pdtview/896288/PHILIPSIBT1368-500E html 46 216r2024 Philips Semiconductors PDR js viewor Product specification Triacs sensitive gate BT136B series E THERMAL RESISTANCES SYMBOL [PARAMETER CONDITIONS min. | TYP. [ MAX. | UNIT Raine | Thermal resistance full cycle - | - | 30 | kw junction to mounting base | half cycle : 37 | Kiw Raia hermal resistance minimum footprint, FR4 board > | 55 | = | kw junction to ambient STATIC CHARACTERISTICS 1,225 °C unless otherwise stated ‘SYMBOL [PARAMETER ‘CONDITIONS MIN. | TYP. UNIT ler Gate trigger current Vo=12ViIr=0.1A qarg+ | - | 25 | 10 | ma Tad | > | 40 | 10 | ma m6 | - | 50 | 10 | ma race | 2 | tt | 25 | ma k Latching current Vp=12Vi lor = 0.1.8 - | 30] 15 | ma 10 | 20 | ma 25 | 15 | ma 40 | 20 | ma by Holding current 22 | 15 | ma Vy On-state voltage 14 | 1.70] Vv Ver Gate trigger voltage o7 | is |v 04] - | ov b Off-state leakage current o4 | os | ma DYNAMIC CHARACTERISTICS 7,225 °C unless otherwise stated ‘SYMBOL [PARAMETER ‘CONDITIONS MIN. | TYP. UNIT Voldt [Critical rate of rise of [Voy = 67% Voruinen - [50 | - | ves off-state voltage ‘exponential waveform: gate open circuit ty Gate controlled turn-on In = 6 A; Vo = Voss fo = 0.1 A - [2]. fas time dloidt = 5 Alcs March 1997 2 Rev 1.000 hitps:iptalldatasheet comidatasheet-pdtview/896288/PHILIPSIBT1368-500E html 216 216r2024 PDR js viewor Philips Semiconductors Product specification Triacs BT136B series E sensitive gate : Ney rs sore 6h j 07 ‘ MI = : \ A | | ‘ Ts \ ee 0 i rau) TH Fig.1. Maximum on-state dissipation, Pyy versus rms Fig.4. Maximum permissible rms current rus; ‘on-state current, Iyss, where a = conduction angle. versus mounting base temperature Tay co TSWUA 9 USDA 129 ‘ Sata EA ‘arg usin 3 Fig.2. Maximum permissible non-repetitive peak Fig.5. Maximum permissible repetitive rms on-state ‘on-state current Ira, versus pulse width t,, for Current Iriqysy, Versus Surge duration, for sinusoidal ‘sinusoidal Currents, fs 20ms. (Blitents, f= 50 Hz; Tra 107°C. so TOMA wom, oI I) 16 ETS 25| ir 4 a Z| x i 12 ‘5 1 5 as ‘ ier feces at ie me “ ° are “ we Fig.3. Maximum permissible non-repetitive peak Fig.6. Normalised gate trigger voltage onsstate current Ir, versus number of cycles, for Vax TW Vex25'°C), versus junction temperature sinusoidal currents, f= 50 Hz. March 1997 3 Rev 1.000 hitps:iptalldatasheet comidatasheet-pdtview/896288/PHILIPSIBT1368-500E html 216r2024 PDR js viewor Product specification Triacs BT136B series E oo ° 100 70 he Fig.7. Normalised gate trigger current lox le25°C), versus junction temperature T, Fig.10. Typical and maximum on-state characteristic. we Fig.9. Normatised holding current qT !4{25°C), Versus junction temperature T. tp imino ope eileen , as oe — ol [ i “be ete Fig.8. Normalised latching current I,(T,y (25°C), Fig.11. Transient thermal impedance Zp ni, VErSUS versus junction temperature pulse width t, oa vom avo et . 0 I 60 o 0. 700) 750 ‘y ae 700, 150, we Fig. 12. Typical, entical rate of rise of off-state voltage,

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