DATA SHEET

PHOTOCOUPLER
PS2501-1,-2,-4, PS2501L-1,-2,-4
HIGH ISOLATION VOLTAGE
SINGLE TRANSISTOR TYPE
−NEPOC
TM
Series−
MULTI PHOTOCOUPLER SERIES

DESCRIPTION
The PS2501-1, -2, -4 and PS2501L-1, -2, -4 are optically coupled isolators containing a GaAs light emitting diode
and an NPN silicon phototransistor.
The PS2501-1, -2, -4 are in a plastic DIP (Dual In-line Package) and the PS2501L-1, -2, -4 are lead bending type
(Gull-wing) for surface mount.

FEATURES
• High isolation voltage (BV = 5 000 Vr.m.s.)
• High collector to emitter voltage (VCEO = 80 V)
• High-speed switching (tr = 3 µs TYP., tf = 5 µs TYP.)
• Ordering number of taping product: PS2501L-1-E3, E4, F3, F4, PS2501L-2-E3, E4
• UL approved: File No. E72422 (S)

APPLICATIONS
• Power supply
• Telephone/FAX.
• FA/OA equipment
• Programmable logic controller

The information in this document is subject to change without notice.

Document No. P10025EJ7V0DS00 (7th edition) The mark • shows major revised points.
Date Published April 1998 NS CP(K)
Printed in Japan © 1988
 PS2501-1,-2,-4,PS2501L-1,-2,-4

PACKAGE DIMENSIONS (in millimeters)

DIP Type

PS2501-1 (New Package) PS2501-4 (New Package)

TOP VIEW TOP VIEW
4 3 16 15 14 13 1211 10 9

4.6 ± 0.35 20.3 MAX.

1 2 1 2 3 4 5 6 7 8
1. Anode 1, 3, 5, 7. Anode
2. Cathode 2, 4, 6, 8. Cathode

6.5
6.5

3. Emitter 9,11,13,15. Emitter

4. Collector 10,12,14,16. Collector

7.62 7.62

MAX.
MAX.

MIN. MAX.
MIN. MAX.

3.8
3.8

2.8 4.55
2.8 4.55

0.65
0.65

1.25±0.15 1.25±0.15 0.50 ± 0.10

0.50 ± 0.10 0 to 15˚ 0 to 15˚
0.25 M
0.25 M
2.54 2.54

PS2501-1 TOP VIEW PS2501-2 TOP VIEW

4 3 8 7 6 5

5.1 MAX. 10.2 MAX.

1 2 1 2 3 4
1. Anode 1, 3. Anode
2. Cathode 2, 4. Cathode
6.5
6.5

3. Emitter 5, 7. Emitter
4. Collector 6, 8. Collector
7.62 7.62
MAX.
MAX.

MIN. MAX.
MIN. MAX.

3.8
3.8

2.8 4.55
2.8 4.55

0.65
0.65

1.25±0.15 1.25±0.15 0.50 ± 0.10

0.50 ± 0.10 0 to 15˚ 0.25 M 0 to 15˚
0.25 M
2.54 2.54

PS2501-4 TOP VIEW

16 15 14 13 12 11 10 9
20.3 MAX.

1 2 3 4 5 6 7 8
6.5

1, 3, 5, 7. Anode
2, 4, 6, 8. Cathode
9,11,13,15. Emitter
7.62 10,12,14,16. Collector
MAX.
MIN. MAX.
3.8
2.8 4.55

0.65

1.25±0.15 0.50 ± 0.10

0.25 M 0 to 15˚

2.54

Caution New package 1-ch, 4-ch only

2
 PS2501-1,-2,-4,PS2501L-1,-2,-4

Lead Bending Type

PS2501L-1 (New Package) PS2501L-4 (New Package)

TOP VIEW TOP VIEW
4 3 16 15 14 13 1211 10 9

4.6 ± 0.35 20.3 MAX.

1 2 1 2 3 4 5 6 7 8
1. Anode 1, 3, 5, 7. Anode
2. Cathode 2, 4, 6, 8. Cathode
3. Emitter 9,11,13,15. Emitter

6.5
6.5

4. Collector 10,12,14,16. Collector

0.05 to 0.2
7.62 0.05 to 0.2 7.62

MAX.
MAX.

3.8
3.8

0.90 ± 0.25 0.90 ± 0.25

1.25±0.15 1.25±0.15
9.60 ± 0.4 9.60 ± 0.4
0.25 M 0.25 M
2.54 2.54

PS2501L-1 PS2501L-2
TOP VIEW TOP VIEW
4 3 8 7 6 5

5.1 MAX. 10.2 MAX.

1 2 1 2 3 4
1. Anode 1, 3. Anode
2. Cathode 2, 4. Cathode
3. Emitter 5, 7. Emitter
6.5

6.5

4. Collector 6, 8. Collector
0.05 to 0.2

0.05 to 0.2
7.62 7.62
MAX.

MAX.
3.8

3.8

0.90 ± 0.25 0.90 ± 0.25

1.25±0.15 1.25±0.15
9.60 ± 0.4 9.60 ± 0.4
0.25 M 0.25 M
2.54 2.54

PS2501L-4 TOP VIEW

16 15 14 13 12 11 10 9

20.3 MAX.
1 2 3 4 5 6 7 8
1, 3, 5, 7. Anode
2, 4, 6, 8. Cathode
9,11,13,15. Emitter
6.5

10,12,14,16. Collector
0.05 to 0.2

7.62
MAX.
3.8

0.90 ± 0.25
1.25±0.15
9.60 ± 0.4
0.25 M
2.54

Caution New package 1-ch, 4-ch only

3
 PS2501-1,-2,-4,PS2501L-1,-2,-4

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified)

Ratings

Parameter Symbol PS2501-1, PS2501-2,-4 Unit

PS2501L-1 PS2501L-2,-4

Diode Reverse Voltage VR 6 V

Forward Current (DC) IF 80 mA

Power Dissipation Derating ∆PD/°C 1.5 1.2 mW/°C

Power Dissipation PD 150 120 mW/ch

*1
Peak Forward Current IFP 1 A

Transistor Collector to Emitter Voltage VCEO 80 V

Emitter to Collector Voltage VECO 7 V

Collector Current IC 50 mA/ch

Power Dissipation Derating ∆PC/°C 1.5 1.2 mW/°C

Power Dissipation PC 150 120 mW/ch

*2
Isolation Voltage BV 5 000 Vr.m.s.

Operating Ambient Temperature TA −55 to +100 °C

Storage Temperature Tstg −55 to +150 °C

*1 PW = 100 µs, Duty Cycle = 1 %

*2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output

4
 PS2501-1,-2,-4,PS2501L-1,-2,-4

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

Parameter Symbol Conditions MIN. TYP. MAX. Unit

Diode Forward Voltage VF IF = 10 mA 1.17 1.4 V

Reverse Current IR VR = 5 V 5 µA

Terminal Capacitance Ct V = 0 V, f = 1.0 MHz 50 pF

Transistor Collector to Emitter Dark ICEO VCE = 80 V, IF = 0 mA 100 nA

Current

Coupled Current Transfer Ratio CTR IF = 5 mA, VCE = 5 V 80 300 600 %

*1
(IC/IF)

Collector Saturation VCE (sat) IF = 10 mA, IC = 2 mA 0.3 V

Voltage

Isolation Resistance RI-O VI-O = 1.0 kVDC 10

11
Ω

Isolation Capacitance CI-O V = 0 V, f = 1.0 MHz 0.5 pF

*2
Rise Time tr VCC = 10 V, IC = 2 mA, RL = 100 Ω 3 µs
*2
Fall Time tf 5

*1 CTR rank ( * : only PS2501-1, PS2501L-1) *2 Test circuit for switching time
K* : 300 to 600 (%)
IF
L* : 200 to 400 (%) Pulse Input VCC
M* : 80 to 240 (%)
PW = 100 µs
D* : 100 to 300 (%) Duty Cycle = 1/10
H* : 80 to 160 (%)
VOUT
W* : 130 to 260 (%) 50 Ω RL = 100 Ω
Q* : 100 to 200 (%)
N : 80 to 600 (%)

5
 PS2501-1,-2,-4,PS2501L-1,-2,-4

TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified)

DIODE POWER DISSIPATION vs. TRANSISTOR POWER DISSIPATION

AMBIENT TEMPERATURE vs. AMBIENT TEMPERATURE
150 150

Transistor Power Dissipation PC (mW)

Diode Power Dissipation PD (mW)

PS2501-1 PS2501-1
PS2501L-1 PS2501L-1
100 100
PS2501-2 PS2501-2
PS2501L-2 1.5 mW/˚C PS2501L-2 1.5 mW/˚C
PS2501-4 PS2501-4
PS2501L-4 PS2501L-4
50 50
1.2 mW/˚C 1.2 mW/˚C

0 25 50 75 100 125 150 0 25 50 75 100 125 150

Ambient Temperature TA (˚C) Ambient Temperature TA (˚C)

FORWARD CURRENT vs. COLLECTOR CURRENT vs.

FORWARD VOLTAGE COLLECTOR TO EMITTER VOLTAGE
100 70
50
TA = +100 ˚C 60
+60 ˚C
Forward Current IF (mA)

Collector Current IC (mA)

+25 ˚C
10 50

5 40
0 ˚C mA
50 mA A
–25 ˚C 30 20 m
1 –55 ˚C 10
0.5 20 IF = 5 mA

10
0.1

0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0 2 4 6 8 10

Forward Voltage VF (V) Collector to Emitter Voltage VCE (V)

COLLECTOR TO EMITTER DARK COLLECTOR CURRENT vs.

CURRENT vs. AMBIENT TEMPERATURE COLLECTOR SATURATION VOLTAGE
40
Collector to Emitter Dark Current ICEO (nA)

50 mA
10 000 20 mA
VCE = 80 V 10 mA
Collector Current IC (mA)

40 V 10
24 V 5 mA
1 000 10 V 5
5V 2 mA

100
IF = 1 mA
1

10 0.5

1
0.1
– 50 –25 0 25 50 75 100 0 0.2 0.4 0.6 0.8 1.0
Ambient Temperature TA (˚C) Collector Saturation Voltage VCE(sat) (V)

6
 PS2501-1,-2,-4,PS2501L-1,-2,-4

NORMALIZED CURRENT TRANSFER CURRENT TRANSFER RATIO vs.

RATIO vs. AMBIENT TEMPERATURE FORWARD CURRENT
1.2
,,,,,,,,,,,,,,,,,,,,,,,, 450
Normalized Current Transfer Ratio CTR

,,,,,,,,,,,,,,,,,,,,,,,,
1.0,,,,,,,,,,,,,,,,,,,,,,,,
400

Current Transfer Ratio CTR (%)

,,,,,,,,,,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,,,,,,,,,,
350
0.8,,,,,,,,,,,,,,,,,,,,,,,, 300
,,,,,,,,,,,,,,,,,,,,,,,,
0.6
,,,,,,,,,,,,,,,,,,,,,,,, 250

200
0.4 150
Normalized to 1.0 100
0.2 at TA = 25 ˚C,
IF = 5 mA, VCE = 5 V 50
0 0
–50 –25 0 25 50 75 100 0.05 0.1 0.5 1 5 10 50
Ambient Temperature TA (˚C) Forward Current IF (mA)

SWITCHING TIME vs. SWITCHING TIME vs.

LOAD RESISTANCE LOAD RESISTANCE
50 1 000
IC = 2 mA, IF = 5 mA, tf
tf
VCC = 10 V, tr VCC = 5 V,
CTR = 290 % CTR = 290 %
Switching Time t ( µ s)

10
Switching Time t ( µ s)

100 ts
td
ts

1 10

tr
td
0.1 1
10 50 100 500 1 k 5 k 10 k 100 500 1 k 5 k 10 k 50 k 100 k
Load Resistance RL (Ω) Load Resistance RL (Ω)

FREQUENCY RESPONSE LONG TERM CTR DEGRADATION

1.2
IF = 5 mA,
IF = 5 mA (TYP.)
VCE = 5 V
0 1.0
CTR (Relative Value)
Normalized Gain GV

–5 0.8
TA = 25 ˚C
–10 0.6
100 Ω
TA = 60 ˚C
–15 0.4
RL = 1 kΩ
–20 0.2
300 Ω
0
0.5 1 2 5 10 20 50 100 200 500 102 103 104 105
Frequency f (kHz) Time (Hr)

Remark The graphs indicate nominal characteristics.

7
 PS2501-1,-2,-4,PS2501L-1,-2,-4

TAPING SPECIFICATIONS (in millimeters)

Outline and Dimensions (Tape)

1.75±0.1
2.0±0.1
4.0±0.1 1.55±0.1 4.3±0.2

7.5±0.1

16.0±0.3

10.3±0.1
0.3
1.55±0.1 5.6±0.1
8.0±0.1

Tape Direction
PS2501L-1-E3 PS2501L-1-E4
PS2501L-1-F3 PS2501L-1-F4

Outline and Dimensions (Reel)

PS2501L-1-E3, E4: φ 250
PS2501L-1-F3, F4: φ 330

2.0±0.5
φ 13.0±0.5
φ 80.0±5.0

R 1.0
φ 21.0±0.8

16.4 +2.0
–0.0

Packing: PS2501L-1-E3, E4 1 000 pcs/reel

PS2501L-1-F3, F4 2 000 pcs/reel

8
 PS2501-1,-2,-4,PS2501L-1,-2,-4

Outline and Dimensions (Tape)

1.75±0.1
2.0±0.1
4.0±0.1 1.55±0.1
4.3±0.2

7.5±0.1

16.0±0.3

10.3±0.1
1.55±0.1 10.4±0.1 0.3

12.0±0.1

Tape Direction

PS2501L-2-E3 PS2501L-2-E4

Outline and Dimensions (Reel)

2.0±0.5
φ 13.0±0.5
φ 80.0±5.0
φ 330

R 1.0
φ 21.0±0.8

16.4 +2.0
–0.0

Packing: 1 000 pcs/reel

9
 PS2501-1,-2,-4,PS2501L-1,-2,-4

RECOMMENDED SOLDERING CONDITIONS

(1) Infrared reflow soldering
• Peak reflow temperature 235 °C (package surface temperature)
• Time of temperature higher than 210 °C 30 seconds or less
• Number of reflows Three
• Flux Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt % is recommended.)

Recommended Temperature Profile of Infrared Reflow

Package Surface Temperature T (˚C)

(heating)
to 10 s
235 ˚C (peak temperature)
210 ˚C
to 30 s

120 to 160 ˚C

60 to 90 s
(preheating)

Time (s)

Caution Avoid removing the residual flux with chlorine-based cleaning solvent after a reflow process.

Peak temperature 235 ˚C or below

(2) Dip soldering

• Temperature 260 °C or below (molten solder temperature)
• Time 10 seconds or less
• Number of times One
• Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of
0.2 Wt % is recommended.)

10
 PS2501-1,-2,-4,PS2501L-1,-2,-4

[MEMO]

11
 PS2501-1,-2,-4,PS2501L-1,-2,-4

CAUTION

Within this device there exists GaAs (Gallium Arsenide) material which is a
harmful substance if ingested. Please do not under any circumstances break the
hermetic seal.

NEPOC is a trademark of NEC Corporation.

No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.

M4 96. 5