Beruflich Dokumente
Kultur Dokumente
C C
E E
C
C TO-92 B
B B
E SOT-23 SOT-223
Mark: 2A
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 40 V
V(BR)CBO Collector-Base Breakdown Voltage IC = 10 µA, IE = 0 40 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 5.0 V
IBL Base Cutoff Current VCE = 30 V, VBE = 3.0 V 50 nA
ICEX Collector Cutoff Current VCE = 30 V, VBE = 3.0 V 50 nA
ON CHARACTERISTICS
hFE DC Current Gain * IC = 0.1 mA, VCE = 1.0 V 60
IC = 1.0 mA, VCE = 1.0 V 80
IC = 10 mA, VCE = 1.0 V 100 300
IC = 50 mA, VCE = 1.0 V 60
IC = 100 mA, VCE = 1.0 V 30
VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA 0.25 V
IC = 50 mA, IB = 5.0 mA 0.4 V
VBE(sat) Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA 0.65 0.85 V
IC = 50 mA, IB = 5.0 mA 0.95 V
SWITCHING CHARACTERISTICS
td Delay Time VCC = 3.0 V, VBE = 0.5 V, 35 ns
tr Rise Time IC = 10 mA, IB1 = 1.0 mA 35 ns
ts Storage Time VCC = 3.0 V, IC = 10mA 225 ns
tf Fall Time IB1 = IB2 = 1.0 mA 75 ns
Spice Model
PNP (Is=1.41f Xti=3 Eg=1.11 Vaf=18.7 Bf=180.7 Ne=1.5 Ise=0 Ikf=80m Xtb=1.5 Br=4.977 Nc=2 Isc=0 Ikr=0
Rc=2.5 Cjc=9.728p Mjc=.5776 Vjc=.75 Fc=.5 Cje=8.063p Mje=.3677 Vje=.75 Tr=33.42n Tf=179.3p Itf=.4 Vtf=4
Xtf=6 Rb=10)
2N3906 / MMBT3906 / PZT3906
PNP General Purpose Amplifier
(continued)
Typical Characteristics
250 0.3
V CE = 1 .0V β = 10
0.25
125 °C
200
0.2
150 0.15 25 °C
25 °C
0.1
100 125°C
- 40 °C
0.05
- 40 °C
50 0
0.1 0.2 0.5 1 2 5 10 20 50 100 1 10 100 200
I C - COLLECTOR CURRE NT (mA) I C - COLLECTOR CURRENT (mA)
1
1 β = 10
- 40 °C
0.8
0.8
- 40 °C
25 °C
125 °C 0.6 25 °C
0.6
125 °C
0.4 0.4
V CE = 1V
0.2 0.2
0 0
1 10 100 200 0.1 1 10 25
I C - COLLECTOR CURRE NT (mA) I C - COLLECTOR CURRENT (mA)
100
vs Reverse Bias Voltage
V = 25V
CB 10
C obo
10
CAPACITANCE (pF)
1 6
4 C ibo
0.1
2
0.01 0
25 50 75 100 125 0.1 1 10
TA - AMBIE NT TEMP ERATURE (° C) REVERSE BIAS VOLTAGE (V)
2N3906 / MMBT3906 / PZT3906
PNP General Purpose Amplifier
(continued)
2 4
I C = 1.0 mA, R S = 200Ω I C = 100 µA
1 2
I C = 100 µA, R S = 2.0 kΩ
0 0
0.1 1 10 100 0.1 1 10 100
f - FREQUENCY (kHz) R S - SOURCE RESISTANCE ( kΩ )
ts t off
100 100
TIME (nS)
TIME (nS)
Ic
t on I
tf B1 = 10 t on
VBE(OFF) = 0.5V
10 10
tr
Ic Ic
I B1 = I B2 = t off I = I =
10 B1 B2 10
td
1 1
1 10 100 1 10 100
I C - COLLECTOR CURRENT (mA) I - COLLECTOR CURRENT (mA)
Power Dissipation vs
Ambient Temperature
1
PD - POWER DISSIPATION (W)
SOT-223
0.75
TO-92
0.5
SOT-23
0.25
0
0 25 50 75 100 125 150
TEMPERATURE (o C)
2N3906 / MMBT3906 / PZT3906
PNP General Purpose Amplifier
(continued)
100 10
VCE = 10 V
h re - VOLTAGE FEEDBACK RATIO (x10
f = 1.0 kHz
h ie - INPUT IMPEDANCE (k Ω)
10 1
1 0.1
0.1 1 10 0.1 1 10
I C - COLLECTOR CURRENT (mA) I C - COLLECTOR CURRENT (mA)
V CE = 10 V V CE = 10 V
f = 1.0 kHz f = 1.0 kHz
500
h fe - CURRENT GAIN
200
100 100
50
20
10 10
0.1 1 10 0.1 1 10
I C - COLLECTOR CURRENT (mA) I C - COLLECTOR CURRENT (mA)
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In Design product development. Specifications may change in
any manner without notice.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
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Rev. G