Philips Semiconductors Linear Products Product specification

Dual general-purpose operational amplifier NE/SA/SE4558

DESCRIPTION PIN CONFIGURATIONS

The 4558 is a dual operational amplifier that is internally D and N Packages
compensated. Excellent channel separation allows the use of a dual
device in a single amp application, providing the highest packaging AOUT 1 8 V+
density. The NE/SA/SE4558 is a pin-for-pin replacement for the
RC/RM/RV4558. AIN– 2 A 7 BOUT
–+
AIN+ 3 B 6 BIN–
+–
FEATURES V– 4 BIN+
5
• 2MHz unity gain bandwidth guaranteed
• Supply voltage ±22V for SE4558 and ±18V for NE4558
• Short-circuit protection
• No frequency compensation required
• No latch-up
• Large common-mode and differential voltage ranges
• Low power consumption

ORDERING INFORMATION
DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #
8-Pin Plastic Small Outline (SO) Package 0 to +70°C NE4558D 0174C
8-Pin Plastic Dual In-Line Package (DIP) 0 to +70°C NE4558N 0404B
8-Pin Plastic Dual In-Line Package (DIP) -40 to +85°C SA4558N 0404B
8-Pin Plastic Dual In-Line Package (DIP) -40 to +85°C SA4558D 0404B
8-Pin Plastic Dual In-Line Package (DIP) -55 to +125°C SE4558N 0404B

EQUIVALENT SCHEMATIC
8 v+

–
2(6) OUYPUT 1(7)
INPUTS
3(5)
+

4 V–

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Philips Semiconductors Linear Products Product specification

Dual general-purpose operational amplifier NE/SA/SE4558

ABSOLUTE MAXIMUM RATINGS

SYMBOL PARAMETER RATING UNIT
VCC Supply voltage
SE4558 ±22 V
NE4558, SA4558 ±18 V
PD MAX Maximum power dissipation,
TA=25°C (Still air)1
N package 1160 mW
D package 780 mW
Differential input voltage ±30 V
VIN Input voltage2 ±15 V
TSTG Storage temperature range -65 to +150 °C
TA Operating ambient temperature range
SE4558 -55 to +125 °C
SA4558 -40 to +85 °C
NE4558 0 to +70 °C
TSOLD Lead soldering temperature (10sec max) 300 °C
Output short-circuit duration3 Indefinite
NOTES:
1. Derate above 25°C at the following rates:
N package at 9.3mW/°C
D package at 6.2mW/°C
2. For supply voltages less than ±15V, the absolute maximum input voltage is equal to the supply voltage.
3. Short-circuit may be to ground on one amp only. Rating applies to +125°C case temperature or +75°C ambient temperature for NE4558 and
to +85°C ambient temperature for SA4558.

DC ELECTRICAL CHARACTERISTICS
VCC=+15V, TA= 25°C unless otherwise specified.
SE4558 SA/NE4558
SYMBOL PARAMETER TEST CONDITIONS UNIT
Min Typ Max Min Typ Max
VOS Input offset voltage RS≤10kΩ 1.0 5.0 2.0 6.0 mV
∆VOS/∆T Over temp. 4 4 µV/°C
IOS Input offset current 50 200 30 200 nA
∆IOS/∆T Over temp. 20 20 pA/°C
IBIAS Input bias current 40 500 200 500 nA
∆IB/∆T Over temp. 40 40 pA/°C
RIN Input resistance 0.3 1.0 0.3 1.0 MΩ
RL≥2kΩ 50,00 300,0 20,00 300,0
AV Large-signal voltage gain V/V
VOUT=±10V 0 00 0 00
RL≥10kΩ ±12 ±14 ±12 ±14 V
Output voltage swing
RL≥2kΩ ±10 ±13 ±10 ±13 V
VIN Input voltage range ±12 ±13 ±12 ±13 V
CMRR Common-mode rejection ratio RS≤10kΩ 70 100 70 100 dB
PSRR Power supply rejection ratio RS≤10kΩ 10 150 10 150 µV/V
ISC Short-circuit current 5 25 60 5 25 60 mA
Power consumption (all amplifiers) RL=∞ 120 170 120 170 mW

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Philips Semiconductors Linear Products Product specification

Dual general-purpose operational amplifier NE/SA/SE4558

DC ELECTRICAL CHARACTERISTICS (Continued)

SE4558 SA/NE4558
SYMBOL PARAMETER TEST CONDITIONS UNIT
Min Typ Max Min Typ Max
VIN=20mV
Transient response (unity gain) RL=2kΩ
tR CL≤100pF
Rise time 100 100 ns
Overshoot 15.0 15.0 %
SR Slew rate (unity gain) RL≥2kΩ 1.0 1.0 V/µs
f=10kHz
Channel separation (gain=100) 90 90 dB
RS=1kΩ
GBW Unity gain bandwidth (gain=1) 2.0 3.0 2.0 3.0 MHz
De-
θM Phase margin 45 45
gree
nV/√H
VNOISE Input noise voltage f=1kΩ 25 25
z
NOTE: The following specifications apply over operating temperature range.
VOS Input offset voltage RS≤10kΩ 6.0 7.5 mV
IOS Input offset current 500 300/5001 nA
800/1500
IBIAS Input bias current 1500 1 nA

RL≥2kΩ
AV Large-signal voltage gain 25,000 15,000 V/V
VOUT=±10V
Output voltage swing RL≥2kΩ ±10 ±10 V
TA=HIGH 105 150 115 150 mW
PC Power consumption
TA=LOW 125 200 120 200 mW
NOTES:
1. SA4558 only.

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Philips Semiconductors Linear Products Product specification

Dual general-purpose operational amplifier NE/SA/SE4558

TYPICAL PERFORMANCE CURVES

ÇÇÇÇÇÇÇ
ÇÇÇÇÇÇÇ
Input Bias as a Input Offset Current as Common–Mode Range as
Function of Ambient as a Function of Ambient a Function of Supply

ÇÇÇÇÇÇÇ
Temperature Temperature Voltage

ÇÇÇÇÇÇÇ
100 25 –15
TA = 25oC

INPUT offset current ( µ A)

INPUT BIAS CURRENT (µ A)

VS = + 15V VS = + 15V

ÇÇÇÇÇÇÇ
20 –10
80

VOLTAGE RANGE (V)

ÇÇÇÇÇÇÇ

COMMON MODE
–5
60 15

ÇÇÇÇÇÇÇ
0
40 10

ÇÇÇÇÇÇÇ
5

ÇÇÇÇÇÇÇ
20 5
10

0 0 15
0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70 4 6 8 10 12 14 16 18

TEMPERATURE (oC) TEMPERATURE (oC) SUPPLY VOLTAGE (V)

Open–Loop Voltage Gain Open–Loop Gain as a Power Consumption as

as a Function of Function of a Function of Ambient
Frequency Temperature Temperature
120 800K 140

POWER CONSUMPTION (mV)

V = + 15V
100 VS S
= + 15V 130
VOLTAGE GAIN (dB)

600K RL = 2KΩ
80
VOLTAGE GAIN

120
60
400K 110
40
100
20
200K
90
0

–20 0K 80
1 10 100 1K 10K 100K1K 10M 0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70

FREQUENCY (Hz) TEMPERATURE (oC) TEMPERATURE (oC)

ÇÇÇÇÇÇÇ
ÇÇÇÇÇÇÇ Typical Output Voltage Output Voltage Swing Output Voltage Swing

ÇÇÇÇÇÇÇ
as a Function of as a Function of as a Function of
Supply Voltage Load Resistance) Frequency

ÇÇÇÇÇÇÇ
15 28 40

ÇÇÇÇÇÇÇ
TA = 25oC 26 36
10
OUTPUT SWING (V)

24 32
OUTPUT SWING (V)

ÇÇÇÇÇÇÇ
OUTPUT SWING (V)

PEAK TO PEAK
PEAK TO PEAK

22 28
5

ÇÇÇÇÇÇÇ
20 24
TA = 25oC
0 18 20

ÇÇÇÇÇÇÇ
16 VS = + 15V VS = + 15V
18
–5 14 TA = 25oC
12

ÇÇÇÇÇÇÇ
12 8 RL = 25KΩ
–10
10 4
RL = 2KΩ
–15 8 0
4 6 8 10 12 14 16 18 0.1 0.2 0.5 1.0 2.0 5.0 10 100 1K 10K 100K 1M
SUPPLY VOLTAGE (V) LOAD RESISTANCE (KΩ)) FREQUENCY (Hz)

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Philips Semiconductors Linear Products Product specification

Dual general-purpose operational amplifier NE/SA/SE4558

TYPICAL PERFORMANCE CURVES (Continued)

Quiescent Current as a Voltage–Follower

Function of Large–Signal Pulse
Supply Voltage Transient Response Response
6 28 10
QUIESCENT CURRENT (mA)

8 VS = + 15V
24
5 TA = 25oC 6 TA = 25oC

OUTPUT VOLTAGE
20

OUTPUT (mV)
90% 4
4 16 VS = + 15V 2
TA = 25oC
3 12 0
RS = 2KΩ –2
8 CL = 100pF
2 –4
4
10% RISE TIME –6
1
0 –8
0 –10
0 3 6 9 12 15 18 0 .25 .50 .75 1.0 1.25 0 5 10 20 30 40
SUPPLY VOLTAGE (V) TIME (µS) TIME (µS)

Input Noise Voltage as a Function Input Noise Current as a Function

of Frequency of Frequency
1000 100
NOISE CURRENT (PA√ Hz)
NOISE CURRENT (nV√ Hz)

VS = + 15V VS = + 15V
TA = 25oC T = 25oC
100 10
RS = 50Ω RS = 100K
AV = 60dB AV = 60dB

10 1

1 0.1
1 10 100 1K 10K 100K 1 10 100 1K 10K 100K

FREQUENCY (Hz) FREQUENCY (Hz)

Total Harmonic Distortion vs Distortion vs Frequency

Channel Separation Output Voltage VO = 1VRMS
TOTAL HARMONIC DISTORATION (%)

140
7
TOTAL HARMONIC DISTROTION
CHANNEL SEPARATION (dB)

120 6
VS = + 6
100 5 15V
5 V10S = +30V
RL = 2KΩ
ON (2) 1kHz (%)

80 4 AV = 40dB 4 RIAA COMPENSATION

= 1kHz
60 3 3
RS = 1KΩ
40 2 2
VS = +
20 15V 1 1
TA = 25oC
0 0 0
10 100 1K 10K 100k 1 2 3 4 5 6 7 8 9 10 0 100 1K 10K 100K
FREQUENCY (Hz) VO OUTPUT VOLTAGE (VRMS) FREQUENCY (Hz)

August 31, 1994 69