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Design a NMOS transistor with it's drain connected to voltage source V DD in steps
of 0.1 volt from 0 volt to 5 volt for each value of gate to source voltage V GS and
vary VGS from 0 volt to 5 volt in steps of 1 volt. Vary the gate to source voltage
VDS and vary VDS from 0 volt to 5 volt in steps of 1 volt.
Circuit Diagram:
Circuit Diagram
Prob: 2
In figure 1 plot the drain current ID as a function of bulk voltage VBB as VBB
is varied from -5 volts to 0 volts. Ashume default level 1 MOS model parameter
for TSPICE.
ID
+
(1.2 V) 2V
VBB _
Circuit Diagram in Tanner Spice
•
Prob:4
Design a resistive load nMOS inverter of which the load resistance is 5 KOHM.
Observe it's voltage transfer charasteristics. Apply a bit stream of 10101101 to the
input where each bit has a duration of 20 nSec. A rise time and fall time of 0.01
nSec. Observe the transient output response. Repeat the process for an active
PMOS load inverter, a current source load inverter and a push pull inverter.
Compare and comment on your observations with different inverters. Asshume that
the on voltage is +5 volt and off voltage is 0 volt.
In the above output with respect to the pulse (bottommost) it is clear that the
resistive and current source inverter circuit consumes current in on state, whereas
the push pull circuit does not consumes any current in no load state. The no load
current drawn in the resistive inverter circuit is less(0.95 mA peak) than the
current source inverter circuit (6.3 mA peak). So, it can be concluded that the push
pull inverter is the best among all.
Prob:5
Using CMOS logic design a CMOS 2 input (1) NAND gate (2) NOR Gate (3)
XOR Gate. In each case Name the inputs as A and B. Apply a bit stream of
A=10101101 and B=10110001 and observe the output of the gate. Take the
duration of each bit as 20 nano second. Take rise time and fall time as 0.1 nano
second.
XOR Output Waveform (Top) with two input sequence(Medium & Bottom)