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DISCRETE SEMICONDUCTORS

DATA SHEET

M3D176

1N4148; 1N4446; 1N4448


High-speed diodes
Product specification 1996 Sep 03
Supersedes data of April 1996
File under Discrete Semiconductors, SC01
Philips Semiconductors Product specification

High-speed diodes 1N4148; 1N4446; 1N4448

FEATURES DESCRIPTION
• Hermetically sealed leaded glass The 1N4148, 1N4446, 1N4448 are high-speed switching diodes fabricated in
SOD27 (DO-35) package planar technology, and encapsulated in hermetically sealed leaded glass
• High switching speed: max. 4 ns SOD27 (DO-35) packages.
• General application
• Continuous reverse voltage:
max. 75 V
• Repetitive peak reverse voltage: k
handbook, halfpage a
max. 75 V
• Repetitive peak forward current: MAM246

max. 450 mA.


The diodes are type branded.

APPLICATIONS
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
• High-speed switching.

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRRM repetitive peak reverse voltage − 75 V
VR continuous reverse voltage − 75 V
IF continuous forward current see Fig.2; note 1 − 200 mA
IFRM repetitive peak forward current − 450 mA
IFSM non-repetitive peak forward current square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs − 4 A
t = 1 ms − 1 A
t=1s − 0.5 A
Ptot total power dissipation Tamb = 25 °C; note 1 − 500 mW
Tstg storage temperature −65 +200 °C
Tj junction temperature − 200 °C

Note
1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.

1996 Sep 03 2
Philips Semiconductors Product specification

High-speed diodes 1N4148; 1N4446; 1N4448

ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT


VF forward voltage see Fig.3
1N4148 IF = 10 mA − 1.0 V
1N4446 IF = 20 mA − 1.0 V
1N4448 IF = 5 mA 0.62 0.72 V
IF = 100 mA − 1.0 V
IR reverse current VR = 20 V; see Fig.5 25 nA
VR = 20 V; Tj = 150 °C; see Fig.5 − 50 µA
IR reverse current; 1N4448 VR = 20 V; Tj = 100 °C; see Fig.5 − 3 µA
Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 4 pF
trr reverse recovery time when switched from IF = 10 mA to 4 ns
IR = 60 mA; RL = 100 Ω;
measured at IR = 1 mA; see Fig.7
Vfr forward recovery voltage when switched from IF = 50 mA; − 2.5 V
tr = 20 ns; see Fig.8

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT


Rth j-tp thermal resistance from junction to tie-point lead length 10 mm 240 K/W
Rth j-a thermal resistance from junction to ambient lead length 10 mm; note 1 350 K/W
Note
1. Device mounted on a printed circuit-board without metallization pad.

1996 Sep 03 3
Philips Semiconductors Product specification

High-speed diodes 1N4148; 1N4446; 1N4448

GRAPHICAL DATA

MBG451 MBG464
300 600
handbook, halfpage handbook, halfpage

IF IF
(mA) (mA)

200 400

(1) (2) (3)

100 200

0 0
0 100 Tamb (oC) 200 0 1 VF (V) 2

(1) Tj = 175 °C; typical values.


Device mounted on an FR4 printed-circuit board; lead length 10 mm. (2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Fig.2 Maximum permissible continuous forward
current as a function of ambient Fig.3 Forward current as a function of forward
temperature. voltage.

MBG704
102
handbook, full pagewidth

IFSM
(A)

10

10−1
1 10 102 103 tp (µs) 104

Based on square wave currents.


Tj = 25 °C prior to surge.

Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.

1996 Sep 03 4
Philips Semiconductors Product specification

High-speed diodes 1N4148; 1N4446; 1N4448

MGD290 MGD004
103
handbook, halfpage 1.2
IR handbook, halfpage
Cd
(µA)
2 (pF)
10
1.0

(1) (2)
10

0.8
1

0.6
10−1

10−2 0.4
0 100 200 0 10 20
Tj (oC) VR (V)

(1) VR = 75 V; typical values.


(2) VR = 20 V; typical values.
f = 1 MHz; Tj = 25 °C.

Fig.5 Reverse current as a function of junction Fig.6 Diode capacitance as a function of reverse
temperature. voltage; typical values.

1996 Sep 03 5
Philips Semiconductors Product specification

High-speed diodes 1N4148; 1N4446; 1N4448

handbook, full pagewidth


tr tp
t
D.U.T. 10%
RS = 50 Ω IF IF t rr
SAMPLING t
OSCILLOSCOPE
V = VR I F x R S R i = 50 Ω

90% (1)
VR
MGA881

input signal output signal

(1) IR = 1 mA.

Fig.7 Reverse recovery voltage test circuit and waveforms.

I 1 kΩ 450 Ω
I V
90%

R S = 50 Ω OSCILLOSCOPE V fr
D.U.T.
R i = 50 Ω

10%
MGA882 t t
tr tp

input output
signal signal

Fig.8 Forward recovery voltage test circuit and waveforms.

1996 Sep 03 6
Philips Semiconductors Product specification

High-speed diodes 1N4148; 1N4446; 1N4448

PACKAGE OUTLINE

andbook, full pagewidth 0.56


max

1.85 4.25 MLA428 - 1


max 25.4 min max 25.4 min

Dimensions in mm.

Fig.9 SOD27 (DO-35).

DEFINITIONS

Data Sheet Status


Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS


These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale

1996 Sep 03 7