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3-pronged appraoch:
1. Clean Factories
2. Wafer Cleaning
3. Gettering
From Intel
Cleaning
1. Clean Factories
From Middleman
Cleaning
Wafers Cleaning
solution
Cleaning
Cleaning
H HH HH HH H
O O O O O O O O O O O O
Si Si Si Si Si O Si Si O Si Si O Si Si O Si
O O O O O O O O
Si Si Si Si
Si O Si O Si O Si Si O Si O Si O Si
Si Si Si Si
Si O Si O Si O Si Si O Si O Si O Si
Cleaning
•Absorbed gas
•Particles
•Nonpolar organics
•Polar Organics
Water •Water
Silicon Oxide •Oxide
Silicon Wafer
Cleaning
Cl-
K+ F-
K+
Na+
Cleaning
Chemical Bonds
Ionic 6-11
Covalent 0.6-7
Metallic 1-3.5
Physical Forces
H bonds <0.5
dipole-dipole <0.2
Despersion <0.4
Cleaning
of these steps.
H2O / NH4OH /H2O2 H2O Rinse H2O / HCl /H2O2
• Sulfuric Clean(Piranha) (5:1:1)
80oC
Room Temp (6:1:1)
80oC
Hydrogen
peroxide C C C
(H2O2)
Organic Impurity H O H
O
Cleaning
DI Water Rinse
H2SO4 H2O Rinse H2O : HF H2O Rinse
• Recipe: H2O* / Room Temperature H2O2
125oC
Room Temp (10 : 1)
Room Temp
earlier wet clean. H2O Rinse H2O : HF H2O Rinse Alcohol (IPA)
Room Temp (100 : 1) Room Temp Dry
Room Temp Room Temp
• Action:
• Dissolves chemicals and reaction products
• A DI water rinse may also be used to stop the action of
cleaning chemicals.
Cleaning
• Now we need to remove this poor quality oxide before we can grow
high quality gate oxide.
• This removal is done in the (10:1) Oxide Etch. A high concentration
of HF is used because we have a lot of oxide.
N-Si N-Si
P-Si
Cleaning
Cleaning
• Removes: Particulates
• Action:
This works in two ways
1) By repulsion of like charges
• Both the particle and the wafer get negatively charged when
dipped in the solution. The particle is repelled from the surface.
Negatively
- - -
charged particle
- -
Negatively moves away
charged - - - - - - - - -- - - - - - - - -
surface Cleaning
Cu 2+ + 2e - ¤ Cu 0.34
3+ -
Fe + 3e ¤ Fe - 0.17
2+ -
Ni + 2e ¤ Ni - 0.25
3+ -
Cr + 3e ¤ Cr - 0.71
Oxidized
Form
Substrate
Cleaning
+ -
H 2O2 + 2H + 2e ¤ 2H 2O 1.77
Form
2+ -
Cu + 2e ¤ Cu 0.34
Fe 3+ + 3e - ¤ Fe - 0.17
2+ -
Ni + 2e ¤ Ni - 0.25
3+ -
Cr + 3e ¤ Cr - 0.71
Oxidized
Form
SC-2 Clean
• Recipe: H2O / HCl / H2O2 80oC
(6:1:1)
Cleaning
Removes: water from wafers H2O / NH4OH /H2O2 H2O Rinse H2O / HCl /H2O2
(5:1:1) Room Temp (6:1:1)
•The alcohol evaporates more easily than water. It leaves a dry surface
Drop of
water
3. Gettering
Metals:
Traps on back
or in bulk
Alkali ions:
Dielectric layer
on topside SiO2 Precipitates
Cleaning
Damage induced
Prof. Milo Koretsky
Chemical Engineering Dept .