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Technische Information / Technical Information

IGBT-Module
IGBT-Modules BSM25GP120

Elektrische Eigenschaften / Electrical properties

Höchstzulässige Werte / Maximum rated values
Diode Gleichrichter/ Diode Rectifier
Periodische Rückw. Spitzensperrspannung
VRRM 1600 V
repetitive peak reverse voltage
Durchlaßstrom Grenzeffektivwert
I FRMSM 40 A
RMS forward current per chip
Dauergleichstrom
TC = 80°C Id 25 A
DC forward current
Stoßstrom Grenzwert tP = 10 ms, Tvj = 25°C I FSM 300 A
surge forward current tP = 10 ms, Tvj = 150°C 230 A
2 2
Grenzlastintegral tP = 10 ms, Tvj = 25°C I t 450 As
2 2
I t - value tP = 10 ms, Tvj = 150°C 260 As

Transistor Wechselrichter/ Transistor Inverter

Kollektor-Emitter-Sperrspannung
VCES 1200 V
collector-emitter voltage
Kollektor-Dauergleichstrom Tc = 80 °C I C,nom. 25 A
DC-collector current TC = 25 °C IC 45 A
Periodischer Kollektor Spitzenstrom
tP = 1 ms, TC = 80 °C I CRM 50 A
repetitive peak collector current
Gesamt-Verlustleistung
TC = 25°C Ptot 230 W
total power dissipation
Gate-Emitter-Spitzenspannung DataSheet4U.com ee
gate-emitter peak voltage
VGES +/- 20V V DataSh

Diode Wechselrichter/ Diode Inverter

Dauergleichstrom
Tc = 80 °C IF 25 A
DC forward current
Periodischer Spitzenstrom
tP = 1 ms I FRM 50 A
repetitive peak forw. current
Grenzlastintegral
VR = 0V, tp = 10ms, Tvj = 125°C I 2t 125 A2s
I 2t - value

Transistor Brems-Chopper/ Transistor Brake-Chopper

Kollektor-Emitter-Sperrspannung
VCES 1200 V
collector-emitter voltage
Kollektor-Dauergleichstrom TC = 80 °C I C,nom. 12,5 A
DC-collector current TC = 25 °C IC 20 A
Periodischer Kollektor Spitzenstrom
tP = 1 ms, TC = 80°C I CRM 25 A
repetitive peak collector current
Gesamt-Verlustleistung
TC = 25°C Ptot 100 W
total power dissipation
Gate-Emitter-Spitzenspannung
VGES +/- 20V V
gate-emitter peak voltage

Diode Brems-Chopper/ Diode Brake-Chopper

Dauergleichstrom
Tc = 80 °C IF 10 A
DC forward current
Periodischer Spitzenstrom
tP = 1 ms I FRM 20 A
repetitive peak forw. current

prepared by: Andreas Schulz date of publication:29.03.2001

approved by: Robert Severin revision: 5

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Technische Information / Technical Information

IGBT-Module
IGBT-Modules BSM25GP120

Modul Isolation/ Module Isolation

Isolations-Prüfspannung RMS, f = 50 Hz, t = 1 min.
VISOL 2,5 kV
insulation test voltage NTC connected to Baseplate

Elektrische Eigenschaften / Electrical properties

Charakteristische Werte / Characteristic values
Diode Gleichrichter/ Diode Rectifier min. typ. max.
Durchlaßspannung
Tvj = 150°C, IF = 25 A VF - 1,05 1,1 V
forward voltage
Schleusenspannung
Tvj = 150°C V(TO) - - 0,8 V
threshold voltage
Ersatzwiderstand
Tvj = 150°C rT - - 10,5 mΩ
slope resistance
Sperrstrom
Tvj = 150°C, VR = 1600 V IR - 2 - mA
reverse current
Modul Leitungswiderstand, Anschlüsse-Chip
TC = 25°C RAA'+CC' - 8 - mΩ
lead resistance, terminals-chip

Transistor Wechselrichter/ Transistor Inverter min. typ. max.

Kollektor-Emitter Sättigungsspannung VGE = 15V, Tvj = 25°C, IC = 25 A VCE sat - 2,1 2,55 V
collector-emitter saturation voltage VGE = 15V, Tvj = 125°C, IC = 25 A - 2,45 - V
m
et4U.co
Gate-Schwellenspannung
VCE = VDataSheet4U.com
GE, Tvj = 25°C, IC = 1 mA VGE(TO) 4,5 5,5 6,5 V ee
gate threshold voltage DataSh
Eingangskapazität f = 1MHz, Tvj = 25°C
Cies - 1,5 - nF
input capacitance VCE = 25 V, VGE = 0 V
Kollektor-Emitter Reststrom VGE = 0V, Tvj = 25°C, VCE = 1200 V I CES - 1,5 500 µA
collector-emitter cut-off current VGE = 0V, Tvj =125°C, VCE = 1200 V - 2,0 - mA
Gate-Emitter Reststrom
VCE = 0V, VGE =20V, Tvj =25°C I GES - - 300 nA
gate-emitter leakage current
Einschaltverzögerungszeit (ind. Last) I C = INenn, VCC = 600 V
turn on delay time (inductive load) VGE = ±15V, Tvj = 25°C, RG = 27 Ohm td,on - 45 - ns
VGE = ±15V, Tvj = 125°C, RG = 27 Ohm - 45 - ns
Anstiegszeit (induktive Last) I C = INenn, VCC = 600 V
rise time (inductive load) VGE = ±15V, Tvj = 25°C, RG = 27 Ohm tr - 45 - ns
VGE = ±15V, Tvj = 125°C, RG = 27 Ohm - 45 - ns
Abschaltverzögerungszeit (ind. Last) I C = INenn, VCC = 600 V
turn off delay time (inductive load) VGE = ±15V, Tvj = 25°C, RG = 27 Ohm td,off - 290 - ns
VGE = ±15V, Tvj = 125°C, RG = 27 Ohm - 340 - ns
Fallzeit (induktive Last) I C = INenn, VCC = 600 V
fall time (inductive load) VGE = ±15V, Tvj = 25°C, RG = 27 Ohm tf - 60 - ns
VGE = ±15V, Tvj = 125°C, RG = 27 Ohm - 80 - ns
Einschaltverlustenergie pro Puls I C = INenn, VCC = 600 V
turn-on energy loss per pulse VGE = ±15V, Tvj = 125°C, RG = 27 Ohm Eon - 3,2 - mWs
LS = 75 nH
Abschaltverlustenergie pro Puls I C = INenn, VCC = 600 V
turn-off energy loss per pulse VGE = ±15V, Tvj = 125°C, RG = 27 Ohm Eoff - 3,2 - mWs
LS = 75 nH
Kurzschlußverhalten tP ≤ 10µs, VGE ≤ 15V, RG = 27 Ohm
SC Data Tvj≤125°C, VCC = 720 V I SC - 160 - A
dI/dt = 2000 A/µs

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Technische Information / Technical Information

IGBT-Module
IGBT-Modules BSM25GP120

Elektrische Eigenschaften / Electrical properties

Charakteristische Werte / Characteristic values
min. typ. max.
Modulinduktivität
LσCE - - 100 nH
stray inductance module
Modul Leitungswiderstand, Anschlüsse-Chip
TC = 25°C RCC'+EE' - 11 - mΩ
lead resistance, terminals-chip

Diode Wechselrichter/ Diode Inverter min. typ. max.

Durchlaßspannung VGE = 0V, Tvj = 25°C, IF = 25 A VF - 2,05 2,5 V
forward voltage VGE = 0V, Tvj = 125°C, IF = 25 A - 1,9 - V
Rückstromspitze I F=INenn, - diF/dt = 1000A/µs
peak reverse recovery current VGE = -10V, Tvj = 25°C, VR = 600 V I RM - 30 - A
VGE = -10V, Tvj = 125°C, VR = 600 V - 35 - A
Sperrverzögerungsladung I F=INenn, - diF/dt = 1000A/µs
recovered charge VGE = -10V, Tvj = 25°C, VR = 600 V Qr - 2,1 - µAs
VGE = -10V, Tvj = 125°C, VR = 600 V - 4,5 - µAs
Abschaltenergie pro Puls I F=INenn, - diF/dt = 1000A/µs
reverse recovery energy VGE = -10V, Tvj = 25°C, VR = 600 V ERQ - 0,75 - mWs
VGE = -10V, Tvj = 125°C, VR = 600 V - 1,6 - mWs

Transistor Brems-Chopper/ Transistor Brake-Chopper min. typ. max.

Kollektor-Emitter Sättigungsspannung VGE = 15V, Tvj = 25°C, IC = 12,5 A VCE sat - 2,7 3,15 V
m
et4U.co DataSheet4U.com ee
collector-emitter saturation voltage VGE = 15V, Tvj = 125°C, IC = 12,5 A - 3,1 - V
DataSh
Gate-Schwellenspannung
VCE = VGE, Tvj = 25°C, IC = 0,35mA VGE(TO) 4,5 5,5 6,5 V
gate threshold voltage
Eingangskapazität f = 1MHz, Tvj = 25°C
Cies - 0,6 - nF
input capacitance VCE = 25 V, VGE = 0 V
Kollektor-Emitter Reststrom VGE = 0V, Tvj = 25°C, VCE = 1200 V I CES - 0,5 500 µA
collector-emitter cut-off current VGE = 0V, Tvj = 125°C, VCE = 1200 V - 0,8 - mA
Gate-Emitter Reststrom
VCE = 0V, VGE = 20V, Tvj = 25°C I GES - - 300 nA
gate-emitter leakage current

Diode Brems-Chopper/ Diode Brake-Chopper min. typ. max.

Durchlaßspannung Tvj = 25°C, IF = 12,5 A VF - 2,35 2,65 V
forward voltage Tvj = 125°C, IF = 12,5 A - 2,3 - V

NTC-Widerstand/ NTC-Thermistor min. typ. max.

Nennwiderstand
rated resistance TC = 25°C R25 - 5 - kΩ

Abweichung von R100

deviation of R100 TC = 100°C, R100 = 493 Ω ∆R/R -5 5 %

Verlustleistung TC = 25°C P25 20 mW

power dissipation
B-Wert R2 = R1 exp [B(1/T2 - 1/T1)] B25/50 3375 K
B-value

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Technische Information / Technical Information

IGBT-Module
IGBT-Modules BSM25GP120

Thermische Eigenschaften / Thermal properties

min. typ. max.
Innerer Wärmewiderstand Gleichr. Diode/ Rectif. Diode RthJC - - 1 K/W
thermal resistance, junction to case Trans. Wechsr./ Trans. Inverter - - 0,55 K/W
Diode Wechsr./ Diode Inverter - - 1,2 K/W
Trans. Bremse/ Trans. Brake - - 1,2 K/W
Diode Bremse/ Diode Brake - - 2,3 K/W
Übergangs-Wärmewiderstand Gleichr. Diode/ Rectif. Diode λPaste=1W/m*K RthCK - 0,08 - K/W
thermal resistance, case to heatsink Trans. Wechsr./ Trans. Inverter λgrease=1W/m*K - 0,04 - K/W
Diode Wechsr./ Diode Inverter - 0,08 - K/W
Höchstzulässige Sperrschichttemperatur
Tvj - - 150 °C
maximum junction temperature
Betriebstemperatur
Top -40 - 125 °C
operation temperature
Lagertemperatur
Tstg -40 - 125 °C
storage temperature

Mechanische Eigenschaften / Mechanical properties

Innere Isolation
Al2O3
internal insulation
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et4U.co DataSheet4U.com ee
DataSh
CTI
225
comperative tracking index
Anzugsdrehmoment f. mech. Befestigung M 3 Nm
mounting torque ±10%
Gewicht
G 180 g
weight

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Technische Information / Technical Information

IGBT-Module
IGBT-Modules BSM25GP120

Ausgangskennlinienfeld Wechselr. (typisch) IC = f (VCE)

Output characteristic Inverter (typical) VGE = 15 V

50

45

40
Tj = 25°C
35 Tj = 125°C

30
IC [A]

25

20

15

10

0
0 0,5 1 1,5 2 2,5 3 3,5 4 4,5 5

m
et4U.co DataSheet4U.com ee
V [V]CE DataSh

Ausgangskennlinienfeld Wechselr. (typisch) IC = f (VCE)

Output characteristic Inverter (typical) Tvj = 125°C

50

45 VGE = 17V
VGE = 15V
40
VGE = 13V
35 VGE = 11V
VGE = 9V
30
IC [A]

25

20

15

10

0
0 0,5 1 1,5 2 2,5 3 3,5 4 4,5 5

VCE [V]

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Technische Information / Technical Information

IGBT-Module
IGBT-Modules BSM25GP120

Übertragungscharakteristik Wechselr. (typisch) IC = f (VGE)

Transfer characteristic Inverter (typical) VCE = 20 V

50

45

40

35 Tj = 25°C
Tj = 125°C
30
IC [A]

25

20

15

10

0
0 2 4 6 8 10 12 14

m
et4U.co DataSheet4U.com ee
V [V]
GE DataSh

Durchlaßkennlinie der Freilaufdiode Wechselr. (typisch) IF = f (VF)

Forward characteristic of FWD Inverter (typical)

50

45

40

35 Tj = 25°C
Tj = 125°C
30
IF [A]

25

20

15

10

0
0 0,5 1 1,5 2 2,5 3

VF [V]

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Technische Information / Technical Information

IGBT-Module
IGBT-Modules BSM25GP120

Schaltverluste Wechselr. (typisch) Eon = f (IC), Eoff = f (IC), Erec = f (IC) VCC = 600 V
Switching losses Inverter (typical) Tj = 125°C, VGE = ±15 V, RGon = RGoff = 27 Ohm

8
Eon
7 Eoff
Erec
6
E [mWs]

0
0 10 20 30 40 50 60

m
et4U.co DataSheet4U.com ee
I [A]
C DataSh

Schaltverluste Wechselr. (typisch) Eon = f (RG), Eoff = f (RG), Erec = f (RG)

Switching losses Inverter (typical) Tj = 125°C, VGE = +-15 V , Ic = Inenn , VCC = 600 V

4,5

4 Eon
Eoff
3,5 Erec

3
E [mWs]

2,5

1,5

0,5

0
0 5 10 15 20 25 30 35 40 45 50

RG [Ω ]

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Technische Information / Technical Information

IGBT-Module
IGBT-Modules BSM25GP120

Transienter Wärmewiderstand Wechselr. ZthJC = f (t)

Transient thermal impedance Inverter

10

Zth-IGBT
Zth-FWD
ZthJC [K/W]

0,1

0,01
0,001 0,01 0,1 1 10

m
et4U.co DataSheet4U.com ee
t [s] DataSh

Sicherer Arbeitsbereich Wechselr. (RBSOA) IC = f (VCE)

Reverse bias save operating area Inverter (RBSOA) Tvj = 125°C, VGE = ±15V, RG = 27 Ohm

60

50

40
IC,Modul
IC,Chip
IC [A]

30

20

10

0
0 200 400 600 800 1000 1200 1400

VCE [V]

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Technische Information / Technical Information

IGBT-Module
IGBT-Modules BSM25GP120

Ausgangskennlinienfeld Brems-Chopper-IGBT (typisch) IC = f (VCE)

Output characteristic brake-chopper-IGBT (typical) VGE = 15 V

25

20 Tj = 25°C
Tj = 125°C

15
IC [A]

10

0
0 0,5 1 1,5 2 2,5 3 3,5 4 4,5 5

m
et4U.co DataSheet4U.com ee
V [V] CE DataSh

Durchlaßkennlinie der Brems-Chopper-Diode (typisch) IF = f (VF)

Forward characteristic of brake-chopper-FWD (typical)
25

20

Tj = 25°C

15 Tj = 125°C
IF [A]

10

0
0 0,5 1 1,5 2 2,5 3 3,5

VF [V]

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Technische Information / Technical Information

IGBT-Module
IGBT-Modules BSM25GP120

Durchlaßkennlinie der Gleichrichterdiode (typisch) IF = f (VF)

Forward characteristic of Rectifier Diode (typical)

50

45

40

35
Tj = 25°C
30 Tj = 150°C
IF [A]

25

20

15

10

0
0 0,2 0,4 0,6 0,8 1 1,2 1,4 1,6

m
et4U.co DataSheet4U.com ee
V [V]F DataSh

NTC- Temperaturkennlinie (typisch) R = f (T)

NTC- temperature characteristic (typical)

100000
Rtyp

10000
R[Ω ]

1000

100
0 20 40 60 80 100 120 140 160

TC [°C]

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Technische Information / Technical Information

IGBT-Module
IGBT-Modules BSM25GP120

Schaltplan/ Circuit diagram

21 22 8 9

20 18 16
19 17 15 NTC
1 2 3 7 4 5 6

14 13 12 11
23 24 10

Gehäuseabmessungen/ Package outlines

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Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine

Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.

This technical information specifies semiconductor devices but promises no characteristics. It is

valid in combination with the belonging technical notes.

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