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1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
2N7000 in SOT54 (TO-92 variant).
2. Features
■ TrenchMOS™ technology
■ Very fast switching
■ Logic level compatible.
3. Applications
■ Relay driver
■ High speed line driver
c
■ Logic level translator.
c
4. Pinning information
Table 1: Pinning - SOT54, simplified outline and symbol
Pin Description Simplified outline Symbol
1 drain (d)
d
2 gate (g)
3 source (s)
g
03ab40
3 21 03ab30
s
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) Tj = 25 to 150 °C − 60 V
VDGR drain-gate voltage (DC) Tj = 25 to 150 °C; RGS = 20 kΩ − 60 V
VGS gate-source voltage (DC) − ±30 V
VGSM peak gate-source voltage tp ≤ 50 µs; pulsed; duty cycle = 25% − ±40 V
ID drain current (DC) Tamb = 25 °C; VGS = 10 V; − 300 mA
Figure 2 and 3
Tamb = 100 °C; VGS = 10 V; Figure 2 − 190 mA
IDM peak drain current Tamb = 25 °C; pulsed; tp ≤ 10 µs; − 1.3 A
Figure 3
Ptot total power dissipation Tamb = 25 °C; Figure 1 − 0.83 W
Tstg storage temperature −55 +150 °C
Tj operating junction temperature −55 +150 °C
Source-drain diode
IS source (diode forward) current (DC) Tamb = 25 °C − 300 mA
ISM peak source (diode forward) current Tamb = 25 °C; pulsed; tp ≤ 10 µs − 1.3 A
9397 750 07153 © Philips Electronics N.V. 2000. All rights reserved.
03aa11 03aa19
120 120
Pder (%) Ider (%)
100 100
80 80
60 60
40 40
20 20
0 0
0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175
T (oC) Tamb (oC)
amb
Fig 1. Normalized total power dissipation as a Fig 2. Normalized continuous drain current as a
function of ambient temperature. function of ambient temperature.
03aa02
10
Tamb = 25oC
ID (A)
tp = 10 µs
1 RDSon = VDS/ ID
100 µs
tp 1 ms
0.1
P δ= 10 ms
T
100 ms
D.C.
tp t
T
0.01
1 10 100
VDS (V)
9397 750 07153 © Philips Electronics N.V. 2000. All rights reserved.
7. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter Conditions Value Unit
Rth(j-a) thermal resistance from junction to ambient vertical in still air; 150 K/W
lead length ≤ 5 mm; Figure 4
03aa00
1000
Zth(j-a)
(K/W)
100 δ = 0.5
0.2
0.1
10
0.02 0.05 tp
P δ=
T
1 single pulse
tp t
T
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10 100
tp (s)
9397 750 07153 © Philips Electronics N.V. 2000. All rights reserved.
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source breakdown ID = 10 µA; VGS = 0 V
voltage Tj = 25 °C 60 75 − V
Tj = −55 °C 55 − − V
VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS;
Figure 9
Tj = 25 °C 1 2 − V
Tj = 150 °C 0.6 − − V
Tj = −55 °C − − 3.5 V
IDSS drain-source leakage current VDS = 48 V; VGS = 0 V
Tj = 25 °C − 0.01 1.0 µA
Tj = 150 °C − − 10 µA
IGSS gate-source leakage current VGS = ±15 V; VDS = 0 V − 10 100 nA
RDSon drain-source on-state VGS = 10 V; ID = 500 mA;
resistance Figure 7 and 8
Tj = 25 °C − 2.8 5 Ω
Tj = 150 °C − − 9.25 Ω
VGS = 4.5 V; ID = 75 mA;
Figure 7 and 8
Tj = 25 °C − 3.8 5.3 Ω
Dynamic characteristics
gfs forward transconductance VDS = 10 V; ID = 200 mA; 100 300 − mS
Figure 11
Ciss input capacitance VGS = 0 V; VDS = 10 V; − 25 40 pF
Coss output capacitance f = 1 MHz; Figure 12 − 18 30 pF
Crss reverse transfer capacitance − 7.5 10 pF
ton turn-on time VDD = 50 V; RD = 250 Ω; − 3 10 ns
toff turn-off time VGS = 10 V; RG = 50 Ω; − 12 15 ns
RGS = 50 Ω
Source-drain diode
VSD source-drain (diode forward) IS = 300 mA; VGS = 0 V; − 0.85 1.5 V
voltage Figure 13
trr reverse recovery time IS = 300 mA; − 30 − ns
Qr recovered charge dIS/dt = −100 A/µs; − 30 − nC
VGS = 0 V; VDS = 25 V
9397 750 07153 © Philips Electronics N.V. 2000. All rights reserved.
03aa04 03aa06
1 0.8
o ID (A) VDS> ID X RDSon
ID (A) Tj = 25 C
0.7
0.8
VGS = 10 V 0.6 o
Tj = 25 C
o
0.5 150 C
0.6
4.5 V
0.4
0.4 4V
0.3
3.5 V 0.2
0.2
3V 0.1
0 0
0 0.4 0.8 1.2 1.6 2 0 1 2 3 4 5 6 7
VDS (V) V (V)
GS
03aa05 03aa28
10 2.2
RDSon (Ω) 3V o a
3.5V Tj = 25 C
9 2
8 1.8
1.6
7
1.4
6
4V
1.2
5
1
4 4.5 V
0.8
3 VGS = 10 V 0.6
2 0.4
1 0.2
0 0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 -60 -20 20 60 100 140 180
ID (A) Tj (oC)
Tj = 25 °C R DSon
a = ---------------------------
-
R DSon ( 25 °C )
Fig 7. Drain-source on-state resistance as a function Fig 8. Normalized drain source on-state resistance
of drain current; typical values. factor as a function of junction temperature.
9397 750 07153 © Philips Electronics N.V. 2000. All rights reserved.
03aa34
3 03aa37
10-1
VGS(th) (V) ID
(A)
2.5
10-2
typ
2
min typ
10-3
1.5
min 10-4
1
0.5 10-5
0 10-6
-60 -20 20 60 100 140 180
0 0.5 1 1.5 2 2.5 3
Tj (oC) VGS (V)
03aa07
0.5 03aa09
gfs (S) VDS> I D X R DSon 100
0.45
o Ciss, Coss
Tj = 25 C
0.4 Crss (pF)
0.35 o
150 C Ciss
0.3
0.25
10 Coss
0.2
0.15
0.1
Crss
0.05
0 1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.1 1 10 100
I (A) VDS (V)
D
9397 750 07153 © Philips Electronics N.V. 2000. All rights reserved.
03aa08
1
VGS= 0 V
IS (A)
0.8
0.6 o
150 C
0.4
o
Tj = 25 C
0.2
0
0 0.2 0.4 0.6 0.8 1 1.2
VSD (V)
9397 750 07153 © Philips Electronics N.V. 2000. All rights reserved.
9. Package outline
Plastic single-ended leaded (through hole) package; 3 leads SOT54
d A L
1
e1
2
D e
b1
L1
0 2.5 5 mm
scale
UNIT A b b1 c D d E e e1 L L1(1)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
9397 750 07153 © Philips Electronics N.V. 2000. All rights reserved.
9397 750 07153 © Philips Electronics N.V. 2000. All rights reserved.
[1] Please consult the most recently issued data sheet before initiating or completing a design.
9397 750 07153 © Philips Electronics N.V. 2000 All rights reserved.
For all other countries apply to: Philips Semiconductors, Internet: http://www.semiconductors.philips.com
International Marketing & Sales Communications,
Building BE, P.O. Box 218, 5600 MD EINDHOVEN,
The Netherlands, Fax. +31 40 272 4825 (SCA69)
9397 750 07153 © Philips Electronics N.V. 2000. All rights reserved.
Contents
1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
4 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
5 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
6 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
7 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
7.1 Transient thermal impedance . . . . . . . . . . . . . . 4
8 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11