$GYDQFHG 3RZHU 026)(7 IRFZ44

FEATURES
BVDSS = 60 V
♦ Avalanche Rugged Technology
♦ Rugged Gate Oxide Technology
RDS(on) = 0.024Ω
♦ Lower Input Capacitance ID = 50 A
♦ Improved Gate Charge
♦ Extended Safe Operating Area
♦ 175°C Operating Temperature
TO-220
♦ Lower Leakage Current: 10µA (Max.) @ VDS = 60V
♦ Lower RDS(ON): 0.020Ω (Typ.) 1
2
3

1.Gate 2. Drain 3. Source

Absolute Maximum Ratings

Symbol Characteristic Value Units
VDSS Drain-to-Source Voltage 60 V
Continuous Drain Current (TC=25°C) 50
ID A
Continuous Drain Current (TC=100°C) 35.4
IDM Drain Current-Pulsed (1) 200 A
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulsed Avalanche Energy (2) 857 mJ
IAR Avalanche Current (1) 50 A
EAR Repetitive Avalanche Energy (1) 12.6 mJ
dv/dt Peak Diode Recovery dv/dt (3) 5.5 V/ns
Total Power Dissipation (TC=25°C) 126 W
PD
Linear Derating Factor 0.84 W/°C
Operating Junction and
TJ , TSTG - 55 to +175
Storage Temperature Range
Maximum Lead Temp. for Soldering °C
TL 300
Purposes, 1/8 from case for 5-seconds

Thermal Resistance
Symbol Characteristic Typ. Max. Units
RθJC Junction-to-Case -- 1.19
RθCS Case-to-Sink 0.5 -- °C/W
RθJA Junction-to-Ambient -- 62.5

Rev. B

©1999 Fairchild Semiconductor Corporation

 1&+$11(/
IRFZ44 32:(5 026)(7

Electrical Characteristics (TC=25°C unless otherwise specified)

Symbol Characteristic Min. Typ. Max. Units Test Condition
BVDSS Drain-Source Breakdown Voltage 60 -- -- V VGS=0V,ID=250µA
∆BV/∆TJ Breakdown Voltage Temp. Coeff. -- 0.063 -- V/°C ID=250µA See Fig 7
VGS(th) Gate Threshold Voltage 2.0 -- 4.0 V VDS=5V,ID=250µA
Gate-Source Leakage , Forward -- -- 100 VGS=20V
IGSS nA
Gate-Source Leakage , Reverse -- -- -100 VGS=-20V
-- -- 10 VDS=60V
IDSS Drain-to-Source Leakage Current µA VDS=48V,TC=150°C
-- -- 100
Static Drain-Source
RDS(on) -- -- 0.024 Ω VGS=10V,ID=25A (4)
On-State Resistance
Ω
gfs Forward Transconductance -- 32.6 -- VDS=30V,ID=25A (4)
Ciss Input Capacitance -- 1770 2300
VGS=0V,VDS=25V,f =1MHz
Coss Output Capacitance -- 590 680 pF
See Fig 5
Crss Reverse Transfer Capacitance -- 220 255
td(on) Turn-On Delay Time -- 20 40
VDD=30V,ID=50A,
tr Rise Time -- 16 40
ns RG=9.1Ω
td(off) Turn-Off Delay Time -- 68 140
See Fig 13 (4) (5)
tf Fall Time -- 70 140
Qg Total Gate Charge -- 64 83 VDS=48V,VGS=10V,
Qgs Gate-Source Charge -- 12.3 -- nC ID=50A
Qgd Gate-Drain ( Miller ) Charge -- 23.6 -- See Fig 6 & Fig 12 (4) (5)

Source-Drain Diode Ratings and Characteristics

Symbol Characteristic Min. Typ. Max. Units Test Condition
IS Continuous Source Current -- -- 50 Integral reverse pn-diode
A
ISM Pulsed-Source Current (1) -- -- 200 in the MOSFET
VSD Diode Forward Voltage (4) -- -- 1.8 V TJ=25°C,IS=50A,VGS=0V
trr Reverse Recovery Time -- 85 -- ns TJ=25°C,IF=50A
Qrr Reverse Recovery Charge -- 0.24 -- µC diF/dt=100A/µs (4)

Notes;
(1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
(2) L=0.4mH, IAS=50A, VDD=25V, RG=27Ω, Starting TJ =25°C
(3) ISD ≤ 50A, di/dt ≤ 350A/µs, VDD ≤ BV DSS , Starting TJ =25°C
(4) Pulse Test : Pulse Width = 250µs, Duty Cycle ≤ 2%
(5) Essentially Independent of Operating Temperature
 1&+$11(/
32:(5 026)(7 IRFZ44
Fig 1. Output Characteristics Fig 2. Transfer Characteristics
VGS
Top : 15 V 102
102 10 V
8.0 V
ID , Drain Current [A] 7.0 V

ID , Drain Current [A]

6.0 V
5.5 V
5.0 V
101
Bottom : 4.5 V

175 oC
101

100 25 oC @ Notes :
1. VGS = 0 V
@ Notes : 2. VDS = 30 V
1. 250 µs Pulse Test
3. 250 µs Pulse Test
2. TC = 25 oC - 55 oC
100 -1 0 1 10-1
10 10 10 2 4 6 8 10
VDS , Drain-Source Voltage [V] VGS , Gate-Source Voltage [V]

Fig 3. On-Resistance vs. Drain Current Fig 4. Source-Drain Diode Forward Voltage
0.04

102

IDR , Reverse Drain Current [A]

Drain-Source On-Resistance

0.03 VGS = 10 V
RDS(on) , [ Ω ]

0.02
101

0.01 VGS = 20 V
@ Notes :
175 oC 1. VGS = 0 V
@ Note : TJ = 25 oC 25 oC 2. 250 µs Pulse Test

0.00 0
10
0 40 80 120 160 200 240 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0
ID , Drain Current [A] VSD , Source-Drain Voltage [V]

Fig 5. Capacitance vs. Drain-Source Voltage Fig 6. Gate Charge vs. Gate-Source Voltage
3500
Ciss= Cgs+ Cgd ( Cds= shorted )
Coss= Cds+ Cgd
Crss= Cgd 10 VDS = 12 V
2800
C iss
VGS , Gate-Source Voltage [V]

VDS = 30 V
Capacitance [pF]

C oss VDS = 48 V
2100

1400 5
@ Notes :
1. VGS = 0 V
C rss
2. f = 1 MHz
700

@ Notes : ID = 50.0 A
00 1
0
10 10 0 10 20 30 40 50 60 70
VDS , Drain-Source Voltage [V] QG , Total Gate Charge [nC]
 1&+$11(/
IRFZ44 32:(5 026)(7

Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature

1.2 2.5

Drain-Source Breakdown Voltage

Drain-Source On-Resistance
BVDSS , (Normalized)

RDS(on) , (Normalized)
1.1 2.0

1.0 1.5

0.9 @ Notes : 1.0 @ Notes :

1. VGS = 0 V 1. VGS = 10 V
2. ID = 250 µA 2. ID =25 A

0.8 0.5
-75 -50 -25 0 25 50 75 100 125 150 175 200 -75 -50 -25 0 25 50 75 100 125 150 175 200
o
TJ , Junction Temperature [ C] TJ , Junction Temperature [oC]

Fig 9. Max. Safe Operating Area Fig 10. Max. Drain Current vs. Case Temperature
60
103 Operation in This Area
is Limited by R DS(on)
50
ID , Drain Current [A]

ID , Drain Current [A]

10 µs
2
10 100 µs 40
1 ms
10 ms
30
101 DC

20
@ Notes :
100 1. TC = 25 oC
2. TJ = 175 oC 10
3. Single Pulse
10-1 0 0
10 101 102 25 50 75 100 125 150 175
VDS , Drain-Source Voltage [V] Tc , Case Temperature [oC]

Fig 11. Thermal Response

Thermal Response

100
D=0.5
@ Notes :
0.2 1. Zθ J C (t)=1.19 o C/W Max.
2. Duty Factor, D=t1 /t2
0.1 3. TJ M -TC =PD M *Zθ J C (t)
10- 1
0.05
Z JC(t) ,

PDM
0.02
0.01 t1
single pulse
t2
θ

10- 2 - 5
10 10- 4 10- 3 10- 2 10- 1 100 101
t1 , Square Wave Pulse Duration [sec]
 1&+$11(/
32:(5 026)(7 IRFZ44
Fig 12. Gate Charge Test Circuit & Waveform

Current Regulator
VGS
Same Type
50kΩ as DUT Qg
12V 200nF
300nF 10V

VDS
VGS Qgs Qgd

DUT
3mA
R1 R2

Current Sampling (IG) Current Sampling (ID)

Charge
Resistor Resistor

Fig 13. Resistive Switching Test Circuit & Waveforms

RL
Vout Vout
90%
Vin VDD
( 0.5 rated VDS )
RG
DUT 10%
Vin
10V
td(on) tr td(off)
tf
t on t off

Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms

BVDSS
LL 1
EAS = ---- LL IAS2 --------------------
VDS 2 BVDSS -- VDD
Vary tp to obtain ID BVDSS
required peak ID IAS

RG C VDD ID (t)
DUT
VDD VDS (t)
10V
tp tp Time
 1&+$11(/
IRFZ44 32:(5 026)(7

Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT +

VDS

--

IS
L

Driver
VGS
RG Same Type
as DUT VDD

VGS dv/dt controlled by RG

IS controlled by Duty Factor D

Gate Pulse Width

VGS D = --------------------------
Gate Pulse Period 10V
( Driver )

IFM , Body Diode Forward Current

IS
( DUT ) di/dt

IRM

Body Diode Reverse Current

VDS
( DUT ) Body Diode Recovery dv/dt

Vf VDD

Body Diode
Forward Voltage Drop
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™ ISOPLANAR™
CoolFET™ MICROWIRE™
CROSSVOLT™ POP™
E2CMOSTM PowerTrench™
FACT™ QS™
FACT Quiet Series™ Quiet Series™
FAST® SuperSOT™-3
FASTr™ SuperSOT™-6
GTO™ SuperSOT™-8
HiSeC™ TinyLogic™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or 2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be effectiveness.
reasonably expected to result in significant injury to the
user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.