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1 main terminal 1
T2 T1
2 main terminal 2
3 gate
1 23 G
tab main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/µs.
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-mb Thermal resistance full cycle - - 3.0 K/W
junction to mounting base half cycle - - 3.7 K/W
Rth j-a Thermal resistance in free air - 60 - K/W
junction to ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
BT136- ... ...F
IGT Gate trigger current VD = 12 V; IT = 0.1 A
T2+ G+ - 5 35 25 mA
T2+ G- - 8 35 25 mA
T2- G- - 11 35 25 mA
T2- G+ - 30 70 70 mA
IL Latching current VD = 12 V; IGT = 0.1 A
T2+ G+ - 7 20 20 mA
T2+ G- - 16 30 30 mA
T2- G- - 5 20 20 mA
T2- G+ - 7 30 30 mA
IH Holding current VD = 12 V; IGT = 0.1 A - 5 15 15 mA
VT On-state voltage IT = 5 A - 1.4 1.70 V
VGT Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
VD = 400 V; IT = 0.1 A; 0.25 0.4 - V
Tj = 125 ˚C
ID Off-state leakage current VD = VDRM(max); - 0.1 0.5 mA
Tj = 125 ˚C
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
BT136- ... ...F
dVD/dt Critical rate of rise of VDM = 67% VDRM(max); 100 50 250 - V/µs
off-state voltage Tj = 125 ˚C; exponential
waveform; gate open
circuit
dVcom/dt Critical rate of change of VDM = 400 V; Tj = 95 ˚C; - - 50 - V/µs
commutating voltage IT(RMS) = 4 A;
dIcom/dt = 1.8 A/ms; gate
open circuit
tgt Gate controlled turn-on ITM = 6 A; VD = VDRM(max); - - 2 - µs
time IG = 0.1 A; dIG/dt = 5 A/µs
7 104
107 C
= 180 4
6 1
107
120
5 110
90 3
60
4 113
30
3 116 2
2 119
1
1 122
0 125 0
0 1 2 3 4 5 -50 0 50 100 150
IT(RMS) / A Tmb / C
Fig.1. Maximum on-state dissipation, Ptot, versus rms Fig.4. Maximum permissible rms current IT(RMS) ,
on-state current, IT(RMS), where α = conduction angle. versus mounting base temperature Tmb.
ITSM / A IT(RMS) / A
1000 12
IT ITSM
10
T time
8
Tj initial = 25 C max
100 6
dIT /dt limit
4
T2- G+ quadrant
10 0
10us 100us 1ms 10ms 100ms 0.01 0.1 1 10
T/s surge duration / s
Fig.2. Maximum permissible non-repetitive peak Fig.5. Maximum permissible repetitive rms on-state
on-state current ITSM, versus pulse width tp, for current IT(RMS), versus surge duration, for sinusoidal
sinusoidal currents, tp ≤ 20ms. currents, f = 50 Hz; Tmb ≤ 107˚C.
15
1
10 0.8
5 0.6
0 0.4
1 10 100 1000 -50 0 50 100 150
Number of cycles at 50Hz Tj / C
Fig.3. Maximum permissible non-repetitive peak Fig.6. Normalised gate trigger voltage
on-state current ITSM, versus number of cycles, for VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
sinusoidal currents, f = 50 Hz.
IGT(Tj) IT / A
12
IGT(25 C) Tj = 125 C
3
T2+ G+ Tj = 25 C typ max
10
2.5 T2+ G-
Vo = 1.27 V
T2- G- Rs = 0.091 ohms
T2- G+ 8
2
6
1.5
1 4
0.5 2
0 0
-50 0 50 100 150 0 0.5 1 1.5 2 2.5 3
Tj / C VT / V
Fig.7. Normalised gate trigger current Fig.10. Typical and maximum on-state characteristic.
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
2.5 bidirectional
1
2
1.5
0.1 P tp
D
1
t
0.5
0.01
0 10us 0.1ms 1ms 10ms 0.1s 1s 10s
-50 0 50 100 150
Tj / C tp / s
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), Fig.11. Transient thermal impedance Zth j-mb, versus
versus junction temperature Tj. pulse width tp.
1.5
1 10
0.5
dIcom/dt = 5.1 3.9 3 2.3 1.8 1.4
A/ms
0 1
-50 0 50 100 150 100 150
0 50
Tj / C Tj / C
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), Fig.12. Typical commutation dV/dt versus junction
versus junction temperature Tj. temperature, parameter commutation dIT/dt. The triac
should commutate when the dV/dt is below the value
on the appropriate curve for pre-commutation dIT/dt.
MECHANICAL DATA
Dimensions in mm
4,5
Net Mass: 2 g max
10,3
max
1,3
3,7
2,8 5,9
min
15,8
max
3,0 max
3,0
not tinned
13,5
min
1,3
max 1 2 3
(2x) 0,9 max (3x)
0,6
2,54 2,54 2,4
Notes
1. Refer to mounting instructions for SOT78 (TO220) envelopes.
2. Epoxy meets UL94 V0 at 1/8".
DEFINITIONS
DATA SHEET STATUS
DATA SHEET PRODUCT DEFINITIONS
STATUS2 STATUS3
Objective data Development This data sheet contains data from the objective specification for
product development. Philips Semiconductors reserves the right to
change the specification in any manner without notice
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in ordere to improve the design and supply the best possible
product
Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in
order to improve the design, manufacturing and supply. Changes will
be communicated according to the Customer Product/Process
Change Notification (CPCN) procedure SNW-SQ-650A
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
2 Please consult the most recently issued datasheet before initiating or completing a design.
3 The product status of the device(s) described in this datasheet may have changed since this datasheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.