From,

Yuben Joseph
MBA IB
Roll No: 31
To,

2009
Yuben
YJ Enterprises
10/9/2009 Jagathy Raj V. P.
School of Management Studies
CUSAT, Kochi - 22

MS Word Assignment
SPECTRAL ANALYSIS OF QUANTUM
DOT LASERS

S
ince the early eighties, predictions have indicated that quantum-
dot lasers should have superior characteristics to other higher
dimensional structures such as quantum well devices and, with the
advent of the self-organized growth technique, progress towards this goal
has been made—at the present time, the best results being for lasers
incorporating InGaAs or InAs dots.

O
ne unexpected feature of InGaAs/GaAs quantum-dot lasers is the
nature of the longitudinal mode distribution. It has been observed
that the laser emission spectra are broad and consist of peaks at
regularly spaced intervals (approx 1–5 nm) superimposed on the normal
longitudinal Fabry–Perot modes.

Such behavior has been attributed to the discrete nature of the dots and the
resulting inhomogeneous broadening (lack of a global Fermi function) leading
to either spatial or spectral hole burning.
Further hypotheses have been advanced to account for the periodic
nature of the spectra where different subsets of dot sizes contribute to different
groups of modes, the groups of longitudinal modes do not necessarily have a
regular spacing .
The effects due to the leaky mode have previously been reported in
quantum well lasers operating at the same wavelength. They lead to an optical
mode loss and an optical confinement factor that vary as a function of
wavelength with a period that is inversely proportional to the device thickness.
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The suggested mechanisms include intracavity photon scattering a

nonu()niform distribution of dot electronic states (due perhaps to some
preferred dot sizes), a gain that is dot size or shape dependent (due to size
and shape dependence of either the oscillator strength or the efficiency with
which dots capture carriers) and a modulation of the losses by constructive
interference with the reflection of a transverse leaky mode propagating in the
transparent substrate.
The laser structure we have examined is represented in Fig. 1 and
consists of three layers of InGaAs quantum dots each of which is grown in a
matrix of GaAs (10 nm thick). These are themselves grown in Al0.3Ga0.7As, and
together comprise the waveguide core of the device. Atomic force microscopy
(AFM) studies indicate the dots are lens like in shape, are 2.2 nm high and 36
nm in diameter with a dot density of 4.5x1010 cm -2.

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Figure 1

http://www.google.com/

MODEL 1 2 3 4 5 6
A
B BRANDE
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D
C
D COLOUM
N
E TOTAL ROW

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The Greek alphabet

Letter name Uppercase Lowercase Letter name Uppercase Lowercase
Alpha Α α Nu Ν ν
Beta Β β Xi Ξ ξ
Gamma Γ γ Omicron Ο ο
Delta Δ δ Pi Π π
Epsilon Ε ε Rho Ρ ρ
Zeta Ζ ζ Sigma Σ σ
Eta Η η Tau Τ τ
Theta Θ θ Upsilon Υ υ
Iota Ι ι Phi Φ φ
Kappa Κ κ Chi Χ χ
Lambda Λ λ Psi Ψ ψ
Mu Μ μ Omega Ω ω

Enrollment in local colleges, 2005

College New students Graduating students Change
Undergraduate
Cedar University 110 103 +7

Elm College 223 214 +9

Maple Academy 197 120 +77

Pine College 134 121 +13

Oak Institute 202 210 -8

Graduate
Cedar University 24 20 +4

Elm College 43 53 -10

Maple Academy 3 11 -8

Pine College 9 4 +5

Oak Institute 53 52 +1

Total 998 908 90

Source: Fictitious data, for illustration purposes only

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Equations:
fx=a0+n=1∞ancosnπxL+bnsinnπxL

Symbols can be inserted: ™₭€©αµ

➢ Bulleting
➢ Points
➢

1) Numbering
2) Points
3) Can
4) Be
5) Done

1) Creating
a) Sub
i) points
(1) is
(a) also
(i) done

Sample.pdf

Book1.xlsx

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Hello Tunes.accdb

YJ Enterprises | Confidential