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FAST RECOVERY DIODE

DFG1E
FEATURES OUTLINE DRAWING
• For high speed switching.

φ 3.5 MAX
Unit in mm(inch)

(0.14)
• Diffused-junction. Glass passivated and
encapsulated. Direction of polarity

Cathode band
29MIN.
φ 0.8

(1.14)
(0.03)

62MIN. (2.44)

5MAX
(0.2)

Symbol(Purple)
Color of
Type cathode band

29MIN.
(1.14)
DFG1E6 (600V) Red
DFG1E8 (800V) Green
DFG1E10 (1000V) Yellow

Weight: 0.35 (g)

ABSOLUTE MAXIMUM RATINGS


Items Type DFG1E6 DFG1E8 DFG1E10
Repetitive Peak Reverse Voltage VRRM V 600 800 1000
Single-phase half sine wave 180° conduction
Average Forward Current IF(AV) A (
0.3 TL = 100°C, Lead length = 10mm )
Surge(Non-Repetitive) Forward Current IFSM A 5( Without PIV, 10ms conduction, Tj = 150°C start )
I2t Limit Value I2t A2s 0.1( Time = 2 ~ 10ms, I = RMS value )
Operating Junction Temperature Tj °C -65 ~ +150
Storage Temperature Tstg °C -65 ~ +150
Notes (1) Lead mounting : Lead temperature 300°C max. to 3.2mm from body for 5sec. max..
(2) Mechanical strength : Bending 90°×2 cycles or 180°×1 cycle, Tensile 2kg, Twist 90°×1 cycle.

CHARACTERISTICS(TL=25°C)
Items Symbols Units Min. Typ. Max. Test Conditions

Peak Reverse Current IRRM µA - - 10 Rated VRRM

IFM=0.3 Ap, Single-phase half sine


Peak Forward Voltage VFM V - - 5.0
wave 1 cycle

Reverse Recovery Time trr ns - - 35 IF=0.1A, Irp=0.2A, 25% Recovery

Rth(j-a) 80
Steady State Thermal Impedance °C/W - - Lead length = 10 mm
Rth(j-l) 50

PDE-DFG1E-0
DFG1E
Forward characteristics Max. average forward power dissipation
(Resistive or inductive load)

MAX. AVERAGE FORWARD POWER DISSIPATION (W)


10 1.2
Single-phase half sine wave
Conduction : 10ms 1 Cycle DC

TL=150˚C 1.0 Single-phase


PEAK FORWARD CURRENT (A)

( 50Hz )

TL=25˚C
1 0.8

0.6

0.1 0.4

0.2

0.01 0
0 5 10 15 20 25 30 0 0.1 0.2 0.3 0.4 0.5
PEAK FORWARD VOLTAGE DROP (V) AVERAGE FORWARD CURRENT (A)

Max. allowable ambient temperature Max. allowable lead temperature


(Resistive or inductive load) (Resistive or inductive load)
160 160
MAX. ALLOWABLE AMBIENT TEMPERATURE (˚C)

Single-phase half sine wave Single-phase half sine wave


MAX. ALLOWABLE LEAD TEMPERATURE (˚C)

180˚ conduction (50Hz) 180˚ conduction (50Hz)


140 140

120 120

100 100

80 80

60 60
L L
L L
40 40

Lead temp PC board


20 PC board (100x180x1.6t) 20
(100x180x1.6t)
Copper foil ( 5.5) Copper foil ( 5.5)
0 0
0 0.1 0.2 0.3 0 0.1 0.2 0.3
AVERAGE FORWARD CURRENT (A) AVERAGE FORWARD CURRENT (A)

Surge forward current characteristic Steady state thermal impedance


( Non-repetitive )
6 140
Surge current
STEADY STATE THERMAL IMPEDANCE (˚C/W)

peak value
10ms 120
5
SURGE FORWARD CURRENT (A)

1 cycle
100 Rth(j - a)
4

80
3 Rth(j - l)

60
Without PIV
2 Ambient temp. measured point
40 Lead temp.
Lead
20

length measured point


2
(φ0.5 thermocouple)
1
15

20 Copper foil ( 5.5)


Lead PC board
length
(100×180×1.6t)
0 0
1 10 100 0 10 20 30
CYCLES LEAD LENGTH (mm)

PDE-DFG1E-0
DFG1E
Transient thermal impedance Reverse recovery time (trr) test circuit

200 10Ω 50Ω


Lead length = 10 mm
100 Rth(j - a)
TRANSIENT THERMAL IMPEDANCE (˚C/W)

D.U.T

Rth(j - l) 22µs
1Ω 8V
SCOPE
220µs (approx.)
10

trr
IF=0.1A
1 0 t
0.25 Irp
Irp=0.2A
Note : PC. board mounted
PC. board( 100 × 180 × 1.6t)
Copper foil ( 5.5 )
0.1
0.001 0.01 0.1 1 10 100
TIME (s)

PDE-DFG1E-0
HITACHI POWER SEMICONDUCTORS
Notices
1. The information given herein, including the specifications and dimensions, is subject to
change without prior notice to improve product characteristics. Before ordering,
purchasers are advised to contact Hitachi sales department for the latest version of this
data sheets.
2. Please be sure to read "Precautions for Safe Use and Notices" in the individual
brochure before use.
3. In cases where extremely high reliability is required (such as use in nuclear power
control, aerospace and aviation, traffic equipment, life-support-related medical
equipment, fuel control equipment and various kinds of safety equipment), safety should
be ensured by using semiconductor devices that feature assured safety or by means of
users’ fail-safe precautions or other arrangement. Or consult Hitachi’s sales department
staff.
4. In no event shall Hitachi be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to this data sheets.
Hitachi assumes no responsibility for any intellectual property claims or any other
problems that may result from applications of information, products or circuits described
in this data sheets.
5. In no event shall Hitachi be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum
rating.
6. No license is granted by this data sheets under any patents or other rights of any third
party or Hitachi, Ltd.
7. This data sheets may not be reproduced or duplicated, in any form, in whole or in part ,
without the expressed written permission of Hitachi, Ltd.
8. The products (technologies) described in this data sheets are not to be provided to any
party whose purpose in their application will hinder maintenance of international peace
and safety not are they to be applied to that purpose by their direct purchasers or any
third party. When exporting these products (technologies), the necessary procedures
are to be taken in accordance with related laws and regulations.

„ For inquiries relating to the products, please contact nearest overseas representatives which is located

“Inquiry” portion on the top page of a home page.

Hitachi power semiconductor home page address http://www.hitachi.co.jp/products/power/pse/

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