ESE319 Introduction to Microelectronics

Miller Effect
Cascode BJT Amplifier

2008 Kenneth R. Laker (based on P. V. Lopresti 2006) update 15Oct08 KRL 1

 ESE319 Introduction to Microelectronics

Prototype Common Emitter Circuit

Ignore “low frequency” High frequency model

capacitors

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 ESE319 Introduction to Microelectronics

Multisim Simulation

Mid-band gain
∣Av∣= g m RC = 40 mS∗5.1 k =20446.2 dB

Half-gain point

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 ESE319 Introduction to Microelectronics

Introducing the Miller Effect

The feedback connection of C  between base and collector

causes it to appear to the amplifier like a large capacitor 1− K  C 
has been inserted between the base and emitter terminals. This
phenomenon is called the “Miller effect” and the capacitive multiplier
“1 – K ” acting on C  equals the common emitter amplifier mid-band
gain, i.e. K =− g m RC .

Common base and common collector amplifiers do not suffer

from the Miller effect, since in these amplifiers, one side of C 
is connected directly to ground.
2008 Kenneth R. Laker (based on P. V. Lopresti 2006) update 15Oct08 KRL 4
 ESE319 Introduction to Microelectronics

High Frequency CC and CB Models

ground
B C B C

E E

Common Collector Common Base

C  is in parallel with R . C  is in parallel with R .
B C
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 ESE319 Introduction to Microelectronics

Miller's Theorem
I Z I 1= I I 2= I
+ + + +
V1 V 2= K V1 V1 i c2 V 2 = K V1
<=>
- - - -

V 1− V 2 V 1− K V 1 V1 V1 V1 Z
I= = = => Z 1= = =
Z Z Z I 1 I 1− K
1− K
V2 V2 Z Z
=> Z 2= = =− = ≈Z
−I 2 −I 1 1
−1 1−
K K if K >> 1

Let's examine Miller's Theorem as it applies to the HF model

for the BJT CE amplifier.
2008 Kenneth R. Laker (based on P. V. Lopresti 2006) update 15Oct08 KRL 6
 ESE319 Introduction to Microelectronics

Common Emitter Miller Effect Analysis

IC 
Determine effect of C :
B V C V Using phasor notation:
o
IR I R =− g m V  I C
C 
C

or
g mV  V o= − g m V  I C  RC 

where
E
I C =  V − V o  s C 


Note: The current through C 

depends only on V  !
I C = V   g m V  RC − I C RC  s C 
 

2008 Kenneth R. Laker (based on P. V. Lopresti 2006) update 15Oct08 KRL 7

 ESE319 Introduction to Microelectronics

Common Emitter Miller Effect Analysis II

From slide 7:
I C = V   g m V  RC − I C RC  s C 
 

Collect terms for I C and V  : 

 1 s RC C   I C =  1 g m RC  s C  V


 1 g m RC  s C  s  1 g m RC  C 
IC = V = V

 1 s RC C    1 s RC C  

Miller Capacitance Ceq: C eq =1− K  C =1 g m RC 

2008 Kenneth R. Laker (based on P. V. Lopresti 2006) update 15Oct08 KRL 8

 ESE319 Introduction to Microelectronics

Common Emitter Miller Effect Analysis III

C eq = 1 g m RC  C 

For our example circuit:

1 g m RC =10.040⋅5100=205

C eq =205⋅2 pF ≈410 pF

2008 Kenneth R. Laker (based on P. V. Lopresti 2006) update 15Oct08 KRL 9

 ESE319 Introduction to Microelectronics

Apply Miller's Theorem to BJT CE Amplifier

Z Z
Z 1= Z 2=
1− K 1
1−
K
1
For the BJT CE Amplifier: Z = and K =− g m RC
j C
1 1 1
=> Z 1=
j 1 g m RC  C 
and Z 2= ≈
1 j C
j 1 C
g m RC 
C eq =1 g m RC  C 

Miller's Theorem => important simplification to the HF BJT CE Model

2008 Kenneth R. Laker (based on P. V. Lopresti 2006) update 15Oct08 KRL 10
 ESE319 Introduction to Microelectronics

Simplified HF Model
R'sig B' I C  C

.≈0 '
++ + R'L= r o∥ RC∥ RL
C V sig V C R'L Vo
Rsig B rx B' C - gmV -
++ +
V sig RB r V C ro RC RL V'sig (b)
gmV RB∥r 
- - V'sig = V sig
E R B∥r  Rsig
R'L
(a) R'sig = r ∥ RB∥Rsig  V o − g m R'L
Thevenin ≈ '
|Vo/Vsig| (dB) V sig 1 j  C in Rsig
R'sig B' I C  C -6 dB/octave
++ + -20 dB/decade
' −3 dB
V sig V C C eq '
R Vo
- gmV
L
- 20 log 10 AM
1
f = '
C in H 2  C in Rsig
C in= C C eq =C  C  1 g m R'L 0
f  f (Hz log scale)
H
(c) (d)

2008 Kenneth R. Laker (based on P. V. Lopresti 2006) update 15Oct08 KRL 11

 ESE319 Introduction to Microelectronics

The Cascode Amplifier

A two transistor amplifier used to obtain simultaneously:
1. Reasonably high input impedance.
2. Reasonable voltage gain.
3. Wide bandwidth.

None of the conventional single transistor designs will meet

all of the criteria above. The cascode amplifier will meet all
of these criteria. a cascode is a combination of a common
emitter stage cascaded with a common base stage. (In “olden
days” the cascode amplifier was a cascade of grounded
cathode and grounded grid vacuum tube stages – hence the
name “cascode,” which has persisted in modern terminology.

2008 Kenneth R. Laker (based on P. V. Lopresti 2006) update 15Oct08 KRL 12

 ESE319 Introduction to Microelectronics

The Cascode Circuit

CE Stage CB Stage
i C1
i c2
i B1 v-out i b2
i e1 i c1
i E1
i C2 i e2 i b1
i B2
Rb
i E2
veg1 vcg2
RB= R2∥ R3 Rin1 = = = low
i e1 i c2
ac equivalent circuit
Comments:
1. R1, R2, R3, and RC set the bias levels for both Q1 and Q2.
2. Determine RE for the desired voltage gain.
3. Cb and Cbyp are to act as “open circuits” at dc and act as “short circuits”
at all operating frequencies of interest, i.e. min.
2008 Kenneth R. Laker (based on P. V. Lopresti 2006) update 15Oct08 KRL 13
 ESE319 Introduction to Microelectronics

Cascode Mid-Band Small Signal Model

i c1 1. Show reduction in Miller effect
Vout
2. Evaluate small-signal voltage gain
i b1
OBSERVATIONS
i e1 a. The emitter current of the CB stage is
i c2 Rin1= low the collector current of the CE stage. (This
i b2
also holds for the dc bias current.)
i e1=i c2
Rb i e2 b. The base current of the CB stage is:
i e1 i c2
i b1= =
1 1
c. Hence, both stages have about same
collector current i c1≈ ic2 and same gm.
g m1= g m2= g m
2008 Kenneth R. Laker (based on P. V. Lopresti 2006) update 15Oct08 KRL 14
 ESE319 Introduction to Microelectronics

Cascode Small Signal Analysis cont.

The input resistance Rin1 to the CB stage
i c1
Vout is the small-signal “RC” for the CE stage
i b1 i e1 ic2
i b1= =
1 1
i e1 Rin1= low
The CE output voltage, the voltage drop
i b2 i c2 from Q2 collector to ground, is:
Rc
r 1 r 1
vcg2 = veg1=−r 1 i b1=− i c2=− i e1
1 1
Rb i e2 Therefore, the CB Stage input resistance is:
veg1 r  1
Rin1= = =r e1
−i e1 1
vcg2 Rin1 r e1 r
AvCE− Stage = ≈− =− 1 => C eq =1 e1  C  2 C 
vsig RE RE RE
2008 Kenneth R. Laker (based on P. V. Lopresti 2006) update 15Oct08 KRL 15
 ESE319 Introduction to Microelectronics

Cascode Small Signal Analysis - cont.

i c1 Now, find the CE collector current in terms of
Vout
i b1 the input voltage Vsig: Recall i c1≈ ic2
vsig
i b2≈
i e1 Rsig∥RBr  21 RE
i c2
i b2  vsig  vsig
i c2= i b2 ≈ ≈
Rsig∥RB r  2 1 RE 1 RE
Rb i e2 for bias insensitivity: 1 RE ≫ Rsig∥RBr  2
vsig
i c2≈ , =>
RE
OBSERVATIONS:
1. Voltage gain Av is about the same as a stand-along CE Amplifier.
2. HF cutoff is much higher then a CE Amplifier due to the reduced Ceq.

2008 Kenneth R. Laker (based on P. V. Lopresti 2006) update 15Oct08 KRL 16

 ESE319 Introduction to Microelectronics

Approximate Cascode HF Voltage Gain

RC
−
V out RE
Av = ≈
V sig '
1 j  C in Rsig

where
r e1
C in =C  C eq =C 1  C C 2 C 
'
RE
Rsig = Rsig∥RB≈ Rsig

2008 Kenneth R. Laker (based on P. V. Lopresti 2006) update 15Oct08 KRL 17

 ESE319 Introduction to Microelectronics

Cascode Biasing
1. Choose IE1 – make it relatively large to
I1 IC1
reduce Rin 1 = r e1=V T / I E1 to push out HF
v-out break frequencies.
IE1 Rin1= low 2. Choose RC for suitable voltage swing
IC2 VC1G and RE for desired gain.
IE2
3. Choose bias resistor string such that
its current I1 is about 0.1 of the collector
current IC1.

4. Given RE, IE2 and VBE2 = 0.7 V calculate

R3.

2008 Kenneth R. Laker (based on P. V. Lopresti 2006) update 15Oct08 KRL 18

 ESE319 Introduction to Microelectronics

Cascode Biasing - cont.

I1 Since the CE-Stage gain is very small:
a. The collector swing of Q2 will be small.
VB1G v-out b. The Q2 collector bias VC2G= VB1G - 0.7 V.
5. Set V B1G−V B2G ≈1 V ⇒ VCE2≈1 V
VC2G
VB2G
This will limit VCB2 VCB2=V CE2−V BE2=0.3 V
which will keep Q2 forward active.

6. Next determine R2. Its drop VR2 = 1 V

VCE2 =V C2G −V Re= V C2G−V B2G−0.7 V  with the known current. V B1G −V B2G
. =V B1G −V BE1−V B2G V BE2 R2 =
I1
.≈ V B1G−0.7 V −V B2G0.7 V VCC −V B1G
. =V B1G −V B2G 7. Then calculate R1. R1 =
I1
2008 Kenneth R. Laker (based on P. V. Lopresti 2006) update 15Oct08 KRL 19
 ESE319 Introduction to Microelectronics

Cascode Bias Example

VCC-ICRE-1.7 ICRC
v-out
VCE1=ICRC–1–ICRE
1.0
=12 V
=12 V VCE2=1

ICRE+0.7
ICRE

I E2≈ I C2= I E1≈ I C1 ⇒ I C1≈ I E2

Cascode circuit Typical Bias Conditions

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 ESE319 Introduction to Microelectronics

Cascode Bias Example cont.

ICRC
1. Choose IE1 – make it a bit high to lower re1
VCC-ICRE-1.7
or r  1. Try IE1 = 5 mA => r e1 =0.025 V / I E =5  .
VCE1=ICRC–1–ICRE
1.0 2. Set desired gain magnitude. For example
VCE2=1
=12 V if |AV| = 10, then RC/RE = 10.

ICRE+0.7
3. Since the CE stage gain is very small,
ICRE
VCE2 can be small. Use VCE2 = VB1G – VB2G = 1 V.

2008 Kenneth R. Laker (based on P. V. Lopresti 2006) update 15Oct08 KRL 21

 ESE319 Introduction to Microelectronics

Cascode Bias Example cont.

RC
ICRC
V CC =12 I C =5 mA. ∣Av∣= R =10
VCC-ICRE-1.7 E

VCE1=ICRC–1–ICRE
Determine RC for a 5 V drop across RC.
1.0 5V
RC = −3
=1000 
VCE2=1 5⋅10 A
ICRE+0.7
RC RC
RE = = =100 
ICRE
∣Av∣ 10

2008 Kenneth R. Laker (based on P. V. Lopresti 2006) update 15Oct08 KRL 22

 ESE319 Introduction to Microelectronics

Cascode Bias Example cont.

I1
V CC =12 RC =1 k  I C =5 mA. RE =100

VCC-ICRE-1.7
ICRC Make current through the string of bias
resistors I1 = 1 mA.
VCE1=ICRC–1–ICRE
1.0
VCC 12
R1  R2 R3= = =12 k 
VCE2=1
I 1 1⋅10 −3

ICRE+0.7 We now calculate the bias voltages:

ICRE V CC − I C RE −1.7 V =12 V −0.5 V −1.7 V =9.8 V
V B1B2=1.0 V
V B2G= I C RE 0.7=5⋅10−3⋅1000.7=1.2 V
2008 Kenneth R. Laker (based on P. V. Lopresti 2006) update 15Oct08 KRL 23
 ESE319 Introduction to Microelectronics

Cascode Bias Example cont.

V B2G=10−3 R3=1.2 V
v-out
R3=1.2 k 
V B1G−V B2G=1⋅10−3 R2=1.0 V
R2=1 k 
R1 =12000−1200−1000=9.8 k 
R1 =10 k 
V CC =12 RC =1 k  V B2G=1.2 V
I C =5 mA. RE =100 V B1G−V B2G=1.0 V
2008 Kenneth R. Laker (based on P. V. Lopresti 2006) update 15Oct08 KRL 24
 ESE319 Introduction to Microelectronics

Multisim Results – Bias Example

IC1

V CC −7.3290.9710.339 12 V −8.639 V
Check IC1: I C1= = =3.36 mA
RC 1000 
IC1 about 3.4 mA. That's a little low.
Increase R3 to 1.5 k Ohms and re-simulate.
2008 Kenneth R. Laker (based on P. V. Lopresti 2006) update 15Oct08 KRL 25
 ESE319 Introduction to Microelectronics

Improved Biasing

10 uF

10 uF

V CC −5.0480.9410.551 12 V −6.540 V
Check IC1: I C1= = =5.46 mA
RC 1000 
That's better! Now measure the gain at a mid-band frequency
with some “large” coupling capacitors, say 10 µF inserted.
2008 Kenneth R. Laker (based on P. V. Lopresti 2006) update 15Oct08 KRL 26
 ESE319 Introduction to Microelectronics

Single Frequency Gain

10 uF v-out

10 uF

Gain |Av| of about 8.75 at 100 kHz. - OK for rough calculations. Some atten-
uation from low CB input impedance (RB = R2||R3)and some from 5 Ohm re.

2008 Kenneth R. Laker (based on P. V. Lopresti 2006) update 15Oct08 KRL 27

 ESE319 Introduction to Microelectronics

Bode Plot for the Amplifier

18.84 dB

Low frequency break point with 10 µF. capacitors

18.84 dB

High frequency break point – internal capacitances only

2008 Kenneth R. Laker (based on P. V. Lopresti 2006) update 15Oct08 KRL 28
 ESE319 Introduction to Microelectronics

Scope Plot – Near 5 V Swing on Output

2008 Kenneth R. Laker (based on P. V. Lopresti 2006) update 15Oct08 KRL 29

 ESE319 Introduction to Microelectronics

Determine Bypass Capacitors

Low Frequency f ≤ fmin
v-out
From CE stage determine Cb
10 10
Cb ≥ ≈ F
2  f min RB∥r bg 2 f min RB∥1 RE
RB= R2∥R3

From CB stage determine Cbyp

10
C byp≥ F
2  f min  1 RE  r 1 
where RS -> RE

2008 Kenneth R. Laker (based on P. V. Lopresti 2006) update 15Oct08 KRL 30