FGA25N120ANTD 1200V NPT Trench IGBT

August 2005

FGA25N120ANTD
1200V NPT Trench IGBT
Features Description
• NPT Trench Technology, Positive temperature coefficient Using Fairchild's proprietary trench design and advanced NPT
technology, the 1200V NPT IGBT offers superior conduction
• Low saturation voltage: VCE(sat), typ = 2.0V
and switching performances, high avalanche ruggedness and
@ IC = 25A and TC = 25°C
easy parallel operation.
• Low switching loss: Eoff, typ = 0.96mJ
This device is well suited for the resonant or soft switching
@ IC = 25A and TC = 25°C
application such as induction heating, microwave oven, etc.
• Extremely enhanced avalanche capability

TO-3P
G C E E

Absolute Maximum Ratings

Symbol Description FGA25N120ANTD Units
VCES Collector-Emitter Voltage 1200 V
VGES Gate-Emitter Voltage ± 20 V
IC Collector Current @ TC = 25°C 50 A
Collector Current @ TC = 100°C 25 A
ICM Pulsed Collector Current (Note 1) 75 A
IF Diode Continuous Forward Current @ TC = 100°C 25 A
IFM Diode Maximum Forward Current 150 A
PD Maximum Power Dissipation @ TC = 25°C 312 W
Maximum Power Dissipation @ TC = 100°C 125 W
TJ Operating Junction Temperature -55 to +150 °C
Tstg Storage Temperature Range -55 to +150 °C
TL Maximum Lead Temp. for soldering 300 °C
Purposes, 1/8” from case for 5 seconds

Thermal Characteristics
Symbol Parameter Typ. Max. Units
RθJC Thermal Resistance, Junction-to-Case for IGBT -- 0.4 °C/W
RθJC Thermal Resistance, Junction-to-Case for Diode -- 2.0 °C/W
RθJA Thermal Resistance, Junction-to-Ambient -- 40 °C/W

©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FGA25N120ANTD Rev. B
 FGA25N120ANTD 1200V NPT Trench IGBT
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FGA25N120ANTD FGA25N120ANTD TO-3P -- -- 30

Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics
ICES Collector Cut-Off Current VCE = VCES, VGE = 0V -- -- 3 mA
IGES G-E Leakage Current VGE = VGES, VCE = 0V -- -- ± 250 nA

On Characteristics
VGE(th) G-E Threshold Voltage IC = 25mA, VCE = VGE 3.5 5.5 7.5 V
VCE(sat) Collector to Emitter IC = 25A, VGE = 15V -- 2.0 2.5 V
Saturation Voltage
IC = 25A, VGE = 15V, -- 2.15 -- V
TC = 125°C
IC = 50A, VGE = 15V -- 2.65 -- V

Dynamic Characteristics
Cies Input Capacitance VCE = 30V, VGE = 0V, -- 3700 -- pF
f = 1MHz
Coes Output Capacitance -- 130 -- pF
Cres Reverse Transfer Capacitance -- 80 -- pF

Switching Characteristics
td(on) Turn-On Delay Time VCC = 600 V, IC = 25A, -- 50 -- ns
tr Rise Time RG = 10Ω, VGE = 15V, -- 60 90 ns
Inductive Load, TC = 25°C
td(off) Turn-Off Delay Time -- 190 -- ns
tf Fall Time -- 100 180 ns
Eon Turn-On Switching Loss -- 4.1 6.2 mJ
Eoff Turn-Off Switching Loss -- 0.96 1.5 mJ
Ets Total Switching Loss -- 5.06 7.7 mJ
td(on) Turn-On Delay Time VCC = 600 V, IC = 25A, -- 50 -- ns
RG = 10Ω, VGE = 15V,
tr Rise Time -- 60 -- ns
Inductive Load, TC = 125°C
td(off) Turn-Off Delay Time -- 200 -- ns
tf Fall Time -- 154 -- ns
Eon Turn-On Switching Loss -- 4.3 6.9 mJ
Eoff Turn-Off Switching Loss -- 1.5 2.4 mJ
Ets Total Switching Loss -- 5.8 9.3 mJ
Qg Total Gate Charge VCE = 600 V, IC = 25A, -- 200 300 nC
VGE = 15V
Qge Gate-Emitter Charge -- 15 23 nC
Qgc Gate-Collector Charge -- 100 150 nC
Notes:
(1) Repetitive rating: Pulse width limited by max. junction temperature

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FGA25N120ANTD Rev. B
 FGA25N120ANTD 1200V NPT Trench IGBT
Electrical Characteristics of DIODE T C = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Units

VFM Diode Forward Voltage IF = 25A TC = 25°C -- 2.0 3.0 V
TC = 125°C -- 2.1 --
trr Diode Reverse Recovery Time IF = 25A TC = 25°C -- 235 350 ns
dI/dt = 200 A/µs
TC = 125°C -- 300 --
Irr Diode Peak Reverse Recovery Cur- TC = 25°C -- 27 40 A
rent
TC = 125°C -- 31 --
Qrr Diode Reverse Recovery Charge TC = 25°C -- 3130 4700 nC
TC = 125°C -- 4650 --

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FGA25N120ANTD Rev. B
 FGA25N120ANTD 1200V NPT Trench IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics Figure 2. Typical Saturation Voltage
Characteristics
180 20V 120
TC = 25°C 15V 12V
17V Common Emitter
160 VGE = 15V
10V
100
TC = 25°C
140
TC = 125°C
Collector Current, IC [A]

Collector Current, IC [A]

120 80
9V
100
60
80

60 8V 40

40
7V 20
20
VGE = 6V
0 0
0 2 4 6 8 10 0 1 2 3 4 5

Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V]

Figure 3. Saturation Voltage vs. Case Figure 4. Saturation Voltage vs. VGE
Temperature at Variant Current Level
3.0 20
Common Emitter Common Emitter
VGE = 15V TC = -40°C
Collector-Emitter Voltage, VCE [V]

Collector-Emitter Voltage, VCE [V]

16

2.5
40A
12

8
IC = 25A
2.0
40A
4 25A
IC = 12.5A

1.5 0
25 50 75 100 125 0 4 8 12 16 20

Case Temperature, TC [°C] Gate-Emitter Voltage, VGE [V]

Figure 5. Saturation Voltage vs. VGE Figure 6. Saturation Voltage vs. VGE
20 20
Common Emitter Common Emitter
TC = 25°C TC = 125°C
Collector-Emitter Voltage, VCE [V]

16
Collector-Emitter Voltage, VCE [V]

16

12 12

8 8

40A 40A
25A 25A
4 4
IC = 12.5A
IC = 12.5A
0 0
0 4 8 12 16 20 0 4 8 12 16 20
Gate-Emitter Voltage, VGE [V] Gate-Emitter Voltage, VGE [V]

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FGA25N120ANTD Rev. B
 FGA25N120ANTD 1200V NPT Trench IGBT
Typical Performance Characteristics (Continued)

Figure 7. Capacitance Characteristics Figure 8. Turn-On Characteristics vs. Gate

Resistance
5000
Common Emitter
4500 VGE = 0V, f = 1MHz
Ciss
TC = 25°C
4000
100
3500

Switching Time [ns]

Capacitance [pF]

3000 tr

2500
td(on)
2000

1500 Common Emitter

VCC = 600V, VGE = ±15V
1000 IC = 25A
Coss TC = 25°C
500
TC = 125°C
Crss
0 10
1 10 0 10 20 30 40 50 60 70

Collector-Emitter Voltage, VCE [V] Gate Resistance, RG [Ω ]

Figure 9. Turn-Off Characteristics vs. Figure 10. Switching Loss vs. Gate Resistance
Gate Resistance
1000
Common Emitter
VCC = 600V, VGE = ±15V
IC = 25A
td(off) TC = 25°C
10
TC = 125°C
Switching Loss [mJ]
Switching Time [ns]

Eon

100
tf

Common Emitter
VCC = 600V, VGE = ±15V Eoff
IC = 25A
1
TC = 25°C
TC = 125°C
10
0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70

Gate Resistance, RG [Ω ] Gate Resistance, RG [Ω ]

Figure 11. Turn-On Characteristics vs. Figure 12. Turn-Off Characteristics vs.
Collector Current Collector Current

Common Emitter
VGE = ±15V, RG = 10Ω
TC = 25°C
TC = 125°C
td(off)
tr
Switching Time [ns]

Switching Time [ns]

100

100
tf

td(on)

Common Emitter
VGE = ±15V, RG = 10Ω
TC = 25°C
TC = 125°C

10 20 30 40 50 10 20 30 40 50

Collector Current, IC [A] Collector Current, IC [A]

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FGA25N120ANTD Rev. B
 FGA25N120ANTD 1200V NPT Trench IGBT
Typical Performance Characteristics (Continued)

Figure 13. Switching Loss vs. Collector Current Figure 14. Gate Charge Characteristics
16
Common Emitter Common Emitter
VGE = ±15V, RG = 10Ω 14 RL = 24Ω
Eon
10 TC = 25°C TC = 25°C

Gate-Emitter Voltage, VGE [V]

TC = 125°C 12
Vcc = 200V 600V
Switching Loss [mJ]

10 400V

Eoff
8

1
6

0.1 0
10 20 30 40 50 0 20 40 60 80 100 120 140 160 180 200

Collector Current, IC [A] Gate Charge, Qg [nC]

Figure 15. SOA Characteristics Figure 16. Turn-Off SOA

100
100 Ic MAX (Pulsed)
50µs
Ic MAX (Continuous)
100µs
Collector Current, Ic [A]

10
Collector Current, IC [A]

1ms

DC Operation
10
1

Single Nonrepetitive
0.1 Pulse TC = 25°C
Curves must be derated
linearly with increase Safe Operating Area
in temperature VGE = 15V, TC = 125°C
0.01 1
0.1 1 10 100 1000 1 10 100 1000
Collector - Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V]

Figure 17. Transient Thermal Impedance of IGBT

1
0

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1

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t
Z
[
e 0.5
s
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0
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1

o 0.2
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s 0.1
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R 0.05 Pdm
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a
0
.
0
1

m 0.02 t1
r
e t2
h
T 0.01
Duty factor D = t1 / t2
single pulse Peak Tj = Pdm × Zthjc + TC
1
E
-
31
E
-
5

1
E
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4

1
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3

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6 www.fairchildsemi.com
FGA25N120ANTD Rev. B
 FGA25N120ANTD 1200V NPT Trench IGBT
Typical Performance Characteristics (Continued)

Figure 18. Forward Characteristics Figure 19. Reverse Recovery Current

50 30

25 di/dt = 200A/µs

Reverse Recovery Currnet , Irr [A]

10
Forward Current , IF [A]

20

TJ = 125° C
15
di/dt = 100A/µs
1 T J = 25° C
10

5
T C = 125°C
T C = 25°C
0.1 0
0.0 0.4 0.8 1.2 1.6 2.0 5 10 15 20 25

Forward Voltage , VF [V] Forward Current , IF [A]

Figure 20. Stored Charge Figure 21. Reverse Recovery Time

4000 300
Stored Recovery Charge , Qrr [nC]

di/dt = 100A/µs
3000 Reverse Recovery Time , trr [ns]
di/dt = 200A/µs 200

2000 di/dt = 200A/µs

di/dt = 100A/µs
100
1000

0 0
5 10 15 20 25 5 10 15 20 25

Forward Current , IF [A] Forward Current , IF [A]

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FGA25N120ANTD Rev. B
 FGA25N120ANTD 1200V NPT Trench IGBT
Mechanical Dimensions

TO-3P
15.60 ±0.20
4.80 ±0.20
13.60 ±0.20

3.80 ±0.20
ø3.20 ±0.10 +0.15
9.60 ±0.20 1.50 –0.05

18.70 ±0.20
12.76 ±0.20

19.90 ±0.20

23.40 ±0.20
13.90 ±0.20

2.00 ±0.20
3.50 ±0.20

3.00 ±0.20
16.50 ±0.30

1.00 ±0.20 1.40 ±0.20

+0.15
0.60 –0.05
5.45TYP 5.45TYP
[5.45 ±0.30] [5.45 ±0.30]

Dimensions in Millimeters

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FGA25N120ANTD Rev. B
 FGA25N120ANTD 1200V NPT Trench IGBT
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to
be an exhaustive list of all such trademarks.
ACEx™ FAST® ISOPLANAR™ PowerSaver™ SuperSOT™-8
ActiveArray™ FASTr™ LittleFET™ PowerTrench® SyncFET™
Bottomless™ FPS™ MICROCOUPLER™ QFET® TinyLogic®
Build it Now™ FRFET™ MicroFET™ QS™ TINYOPTO™
CoolFET™ GlobalOptoisolator™ MicroPak™ QT Optoelectronics™ TruTranslation™
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DOME™ HiSeC™ MSX™ RapidConfigure™ UltraFET®
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EnSigna™ ImpliedDisconnect™ OCXPro™ SILENT SWITCHER® Wire™
FACT™ IntelliMAX™ OPTOLOGIC® SMART START™
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Across the board. Around the world.™
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PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. I16

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FGA25N120ANTD Rev. B