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INTERNATIONAL ISLAMIC UNIVERSITY MALAYSIA

MID TERM EXAMINATION

SEMISTER 2, 2009/2010 SESSION

KULLIYYAH OF ENGINEERING

Program : ENGINEERING Level of Study : UG1

Time : 10 am – 12:00 pm Date : 06/02/2009

Duration : 2 hours

Course Code : ECE 1231 Section(s) : 1 – 20

Course Title : Electronics

This Question Paper Consist of Four (5) Printed Pages (Including Cover Page) With Four (4)
Questions.

INSTRUCTION(S) TO CANDIDATES

DO NOT OPEN UNTIL YOU ARE ASKED TO DO SO

● Total mark of this examination is 100

● This examination is worth 30% of the total final assessment.

● Answer all 4 (Four) questions.

Any form of cheating or attempt to cheat is a serious offence which may lead to
dismissal.
Electronics ECE 1231

Q.1 [25 marks]

a) An n-type GaAs is doped to a concentration of Nd = 1011 cm-3. Assume that the electron
and hole mobilities are given as n = 6800 cm2/V-s and p = 220 cm2/V-s . Calculate the
intrinsic carrier concentration of GaAs given that Eg = 1.4 eV, B = 2.10 x 1014 cm-3 K-
3/2
and T = 300K. Also calculate the electric field that will induce a drift current
density of 250 A/cm2. (8 marks)

Solution:

the conductivity:

the electric field:

b) A silicon pn junction at T = 300 K is doped at Nd = 1015 cm-3 and Na = 1018 cm-3. The zero-
bias junction capacitance is Cjo = 0.25 pF. Find the junction capacitance, Cj. When an
inductance of 2.5 mH is placed across the pn junction, resonance occurs at
1
f r=
2 π √ LC . Calculate the resonance frequency, fr if VR = 1V. (8 marks)

Solution:

The built-in potential:


Electronics ECE 1231

c) Assume each diode in the circuit shown in Fig. 1(c)(i) and (ii) has Vγ = 0.65 V. Find V O
for both cases. (9 marks)

Fig. 1 (c)(i) and (ii)

Solution:

(i)

(ii)

Q.2 [25 marks]

a) Describe and draw the diode piecewise equivalent circuit. Also sketch the I D versus VD of
the diode. (6 marks)

Solution:
Diode piecewise equivalent circuit in the “on” condition when VD ≥ Vγ
Electronics ECE 1231

Diode piecewise equivalent circuit in the “off” condition when VD < Vγ

The piecewise linear diode characteristics ID versus VD

b) Calculate the concentration of holes and electrons in a silicon semiconductor given B = 5.23 x
1015 cm-3 K-3/2, Eg = 1.1 eV, k = 86 x 10 -6, T = 300 K and the sample’s concentration of electrons
no = 7.5 x 1015 cm-3. Is the semiconductor p-type or n-type? (6 marks)

Solution:

The intrinsic carrier concentration is

The concentration of electrons is


Electronics ECE 1231

no = 7.5 x 1015 cm-3


The concentration of holes is

Since , electrons are the majority carriers,


Therefore, this material is n-type semiconductor.

4 15 p(−x / L )
c) The hole concentration in silicon is given by p( x )=10 +10 e x>0
Assume Lp = 10 m. The hole diffusion coefficient is Dp = 15 cm /s. Determine the hole
2

diffusion current density at x = 30 m. (6 marks)

Solution:

d) Consider the circuit shown in Fig. 2(d). The reverse saturation current is IS = 2 x 10-13 A.
Determine the voltage VI required to produce an output voltage of VO = 0.60 V.
(7 marks)

Fig. 2(d)

Solution:
Electronics ECE 1231

Q.3 [25 marks]

a) Describe the difference between a clipper and a clamper circuit using sketches of the
circuit and their output. (6 marks)
Solution:
A clipper circuit and its output response:

A clamper circuit and its output response:

So, from the output response we can see, clipper circuit is used to eliminate portion of a signal
that are above or below a specified level, while clamper circuit shifts the entire signal voltage by
a dc level.

b) A voltage regulator consists of a 6.8 V Zener diode in series with a 250  resistor and a
12 V power supply. Assume rz = 0, draw the schematic and calculate the diode current
and power dissipation. If the power supply is increased to 15 V, calculate the percentage
of increase in diode current and power dissipation. (7 marks)

Solution:
The schematic of a voltage regulator circuit is following.
Electronics ECE 1231

If the power supply is increased to 15V,

The percentage of increase in diode current is

The percentage of increase in diode power dissipation is

c) Assume the input signal of a full-wave rectifier circuit has a peak value of V M = 20 V and
has frequency of 50 Hz. The output load resistance, R = 1.5 kand the ripple voltage, Vr
= 0.3 V. Determine the capacitance to yield this specification. (5 marks)
Solution:

d) Consider the half-wave rectifier circuit shown in Fig. 3(d) below. The input voltage is vI
= 10 sin [2(60)t] V and the transformer turns ratio is N1/N2 = 4. Assume V =0 and rf =
0. Determine the diode current and sketch the output voltage, vO. (7 marks)

Fig. 3(d)
Solution:

The output voltage graph is bellowing


Electronics ECE 1231

Q.4 [25 marks]

a) Describe Zener and avalanche breakdowns. (4 marks)


Solution:
Avalanche breakdown is the most common breakdown mechanism, it occurs when carriers
crossing the space-charge region gain sufficient kinetic energy from the high electric field to be
able to break covalent bonds during a collision process.
Zener breakdown is a second breakdown mechanism, it is a result of tunneling of carriers
across the junction.

b) Plot the output voltage vo from the input voltage vI shown in Fig. 4(b) if V =0.
(6
marks)

Fig. 4(b)
Solution:
When , diode is off, .
When , diode is on, .

0 t

-18V

c) Consider the circuit shown in Fig. 4(c). Assume VB = 10 V, R = 150  and V = 0.7 V.
Assume vs(t) = 40 sin t. Determine the peak diode current, iD(peak), maximum reverse-
bias diode voltage and the fraction of the cycle which the diode is conducting.
Electronics ECE 1231

(8 marks)

Fig. 4(c)

Solution:

The maximum reverse-bias diode voltage is

The diode conduction cycle:

The fraction of the cycle which the diode is conducting:


Electronics ECE 1231

Fig. 4(d)

d) Consider the circuit shown in Fig. 4(d) above. Assume V= 0.7 V and rf = 0. Write the
truth table and determine the output voltage, VO for the following conditions: i) V1 = V2 =
0; ii) V1 = 5 V, V2 = 0; iii) V1 = 0, V2 =5 V; iv) V1 = V2 = 5 V. What logic function does
this diode circuit perform? (8 marks)

Solution:

The truth table:

1 0 1
0 1 1
0 0 0
1 1 1
i) V1 = V2 =0

ii) V1 = 5 V, V2 = 0

iii) V1 = 0, V2 =5 V

iv) V1 = V2 = 5 V

The logic function this diode circuit perform is OR logic circuit.

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