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SEMICONDUCTOR TECHNICAL DATA

 

 

  


. . . designed for generalpurpose switching and amplifier applications.
DC Current Gain hFE = 20 70 @ IC = 4.0 Adc
CollectorEmitter Saturation Voltage VCE(sat) = 1.1 Vdc (Max) @ IC = 4.0 Adc
Excellent Safe Operating Area

15 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
60 VOLTS
90 WATTS

MAXIMUM RATINGS

Symbol

Value

Unit

CollectorEmitter Voltage

Rating

VCEO

60

Vdc

CollectorEmitter Voltage

VCER

70

Vdc

CollectorBase Voltage

VCB

100

Vdc

EmitterBase Voltage

VEB

7.0

Vdc

IC

15

Adc

Base Current

IB

7.0

Adc

Total Power Dissipation @ TC = 25_C

Derate above 25_C

PD

90
0.72

Watts
W/_C

TJ, Tstg

65 to + 150

_C

Collector Current Continuous

Operating and Storage Junction

Temperature Range

CASE 340D02

THERMAL CHARACTERISTICS
Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

RJC

1.39

_C/W

Thermal Resistance, Junction to Ambient

RJA

35.7

_C/W

hFE , DC CURRENT GAIN

1000

VCE = 4.0 V
TJ = 25C
100

10
0.1

TIP3055
TIP2955

0.2

0.3
2.0 3.0
0.5 0.7 1.0
IC, COLLECTOR CURRENT (AMP)

5.0 7.0

10

Figure 1. DC Current Gain

REV 1

Motorola, Inc. 1996

Motorola Bipolar Power Transistor Device Data

v
 

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

VCEO(sus)

60

Vdc

Collector Cutoff Current

(VCE = 70 Vdc, RBE = 100 Ohms)

ICER

1.0

mAdc

Collector Cutoff Current

(VCE = 30 Vdc, IB = 0)

ICEO

0.7

mAdc

Collector Cutoff Current

(VCE = 100 Vdc, VBE(off) = 1.5 Vdc)

ICEV

5.0

mAdc

Emitter Cutoff Current

(VBE = 7.0 Vdc, IC = 0)

IEBO

5.0

mAdc

20
5.0

70

1.1
3.0

OFF CHARACTERISTICS

CollectorEmitter Sustaining Voltage (1)

(IC = 30 mAdc, IB = 0)

ON CHARACTERISTICS (1)

DC Current Gain
(IC = 4.0 Adc, VCE = 4.0 Vdc)
(IC = 10 Adc, VCE = 4.0 Vdc)

hFE

CollectorEmitter Saturation Voltage

(IC = 4.0 Adc, IB = 400 mAdc)
(IC = 10 Adc, IB = 3.3 Adc)

VCE(sat)

Vdc

BaseEmitter On Voltage
(IC = 4.0 Adc, VCE = 4.0 Vdc)

VBE(on)

1.8

Vdc

Is/b

3.0

Adc

Current Gain Bandwidth Product

(IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz)

fT

2.5

MHz

SmallSignal Current Gain

(VCE = 4.0 Vdc, IC = 1.0 Adc, f = 1.0 kHz)

hfe

15

kHz

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased

(VCE = 30 Vdc, t = 1.0 s; Nonrepetitive)

DYNAMIC CHARACTERISTICS

(1) Pulse Test: Pulse Width = 300 s, Duty Cycle

2.0%.
NOTE: For additional design curves, refer to electrical characteristics curves of 2N3055.

IC, COLLECTOR CURRENT (AMPS)

100
50
30
20
1.0 ms

10
5.0
3.0
2.0
1.0
0.5
0.3
0.2
0.1
1.0

300 s

dc
10 ms
SECONDARY BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMIT @ TC = 25C
TJ = 150C

There are two limitations on the power handling ability of a

transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 2 is based on TC = 25_C; T J(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated for
temperature.

40 60
2.0
4.0 6.0
10
20
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)

Figure 2. Maximum Rated Forward Bias

Safe Operating Area

Motorola Bipolar Power Transistor Device Data

  
PACKAGE DIMENSIONS

C
Q

U
S

L
1

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.

J
H

DIM
A
B
C
D
E
G
H
J
K
L
Q
S
U
V

MILLIMETERS
MIN
MAX

20.35
14.70
15.20
4.70
4.90
1.10
1.30
1.17
1.37
5.40
5.55
2.00
3.00
0.50
0.78
31.00 REF

16.20
4.00
4.10
17.80
18.20
4.00 REF
1.75 REF

INCHES
MIN
MAX

0.801
0.579
0.598
0.185
0.193
0.043
0.051
0.046
0.054
0.213
0.219
0.079
0.118
0.020
0.031
1.220 REF

0.638
0.158
0.161
0.701
0.717
0.157 REF
0.069

V
G

STYLE 1:
PIN 1.
2.
3.
4.

BASE
COLLECTOR
EMITTER
COLLECTOR

CASE 340D02
ISSUE B

Motorola Bipolar Power Transistor Device Data

  

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*TIP3055/D*

Motorola Bipolar Power Transistor Device TIP3055/D

Data