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SFH 506

IR-Empfnger/Demodulator-Baustein IR-Receiver/Demodulator Device


31.1 30.1 16.3 15.9 12.9 12.1 Surface not flat 0.3 B 0.5

SFH 506

0.5 X 3x 2.54 = 7.62

V OUT VS
2.54 1.5 0.65 0.50 0.50 GND

10.3 9.7

9.2

0.8 max. 0.4

1.7 1.1

6.1 5.5

R 2.75

GEX06841

Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

Wesentliche Merkmale q Fotodiode mit integriertem Verstrker q Angepat an verschiedene Trgerfrequenzen q Gehuse schwarz eingefrbt: Vergu optimiert fr eine Wellenlnge von 950 nm q Hohe Strsicherheit q Geringe Stromaufnahme q 5 V Betriebsspannung q Hohe Empfindlichkeit q TTL und CMOS kompatibel q Verwendbar bis zu einem Tastverhltnis 40 % Anwendungen q Empfnger fr IR-Fernsteuerungen Typ Type Trgerfrequ. Carrier Frequency kHz 30 33 36 Bestellnr. Ordering Code

Features q Photodiode with hybride integrated circuit q Available for several carrier frequencies q Black epoxy resin, daylight filter optimized for 950 nm q High immunity against ambient light q Low power consumption q 5 V supply voltage q High sensitivity (internal shield case) q TTL and CMOS compatibility q Continuous transmission possible (tpi/T 0.4) Applications q IR-remote control preamplifier modules Typ Type Trgerfrequ. Carrier Frequency kHz 38 40 56 Bestellnr. Ordering Code

SFH 506-30 SFH 506-33 SFH 506-36

Q62702-P1196 Q62702-P1197 Q62702-P1198

SFH 506-38 SFH 506-40 SFH 506-56

Q62702-P1199 Q62702-P1200 Q62702-P1201

Semiconductor Group

05.97

fex06841

4.3 3.7

SFH 506

2 Input Control Circuit 100 k PIN AGC Bandpass Demodulator 1 3

VS

OUT

GND

OHF02198

Blockschaltbild Block Diagram Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operation and storage temperature range Sperrschichttemperatur Junction temperature range Lttemperatur Ltstelle 2 mm vom Gehuse; Ltzeit t 5 s Soldering temperature soldering joint 2 mm distance from package, soldering time t 5 s Betriebsspannung Supply voltage Betriebsstrom Supply current Ausgangsspannung Output voltage Ausgangsstrom Output current Verlustleistung Total power dissipation TA 85 C Pin 2 Pin 2 Pin 3 Pin 3 Symbol Symbol Wert Value 25 ... + 85 100 260 Einheit Unit C C C

TA, Tstg Tj TS

VS ICC VOUT IOUT Ptot

0.3 ... + 6.0 5 0.3 ... + 6.0 5 50

V mA V mA mW

Semiconductor Group

SFH 506

Kennwerte (TA = 25 C) Characteristics Bezeichnung Description Betriebsspannung Supply voltage Bestrahlungsstrke (Testsignal, s. Figure 2) Threshold irradiance (test signal, see Fig. 2) Wellenlnge der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit Range of spectral sensitivity S = 10 % of Smax Halbwinkel Half angle Stromaufnahme Current consumption Vs = 5 V, Ev = 0 Vs = 5 V, Ev = 40 000 Ix, sunlight Pin 2 Symbol Symbol Wert Value typ. 5.0 (4.5 ... 5.5) typ. 0.35 (< 0.5) typ. 0.4 (< 0.6) 30 950 830 ... 1100 Einheit Unit V mW/m2 W/m2 nm nm

VS Ee min(30-40 kHz)1) Ee min(56 kHZ)1) Ee max1)


s max

45

deg.

ICC ICC

0.6 (< 0.8) 1.0 < 250

mA mA mV

Ausgangsspannung Pin 3 VOUT low Output voltage IOUT = 0.5 mA, Ee = 0.7 mW/m2, f = f0, Tp/T = 0.4
1) 1)

In Verbindung mit einer typ. SFH 415 bei Betrieb mit IF = 0.5 A wird eine Reichweite von ca. 35 m erreicht. Together with an IRED SFH 415 under operation conditions of IF = 0.5 A a distance of 35 m is possible.

Semiconductor Group

SFH 506

330 2

*)

+5V 4.7 F
*)

SFH 506/507

>10 k optional

1
*)

GND
OHF02197

only necessary to suppress power supply disturbances

Figure 1 Externe Beschaltung External circuit

Ee

t pi

*)

t
T
*)

VO VOH

_ t pi < 400 s is recommended for optimal function

VOL t po

t po = t pi 160 s
OHF02195

Figure 2 Testsignal Test signal

Semiconductor Group

SFH 506

Relative sensitivity Ee min/Ee = f (f / f 0)


1.0
OHF02187

Sensitivity vs. dark ambient Tp out = f (Ee) = 950 nm, optical test signal
1200
OHF02189

Sensitivity vs. supply voltage disturbances, Ee min = f (VS RMS)


10 2 mW/m E e min
2 OHF02192

E e min / E e
0.8

T p out

s
1000 input burst duration

f =f0

10 kHz 100 Hz

800

10 1

0.6
600

0.4
400

10 0

0.2

200

0.0 0.7

0.8

0.9

1.0

1.1

1.2

1.3

0 -1 10

10 0

10 1 mW/m 2 10 2

10 -1 -1 10

10 0

10 1

10 2 mV 10 3
Vs RMS

f /f

Ee

Sensitivity vs. electric field disturbance Ee min = f (E), field strength of disturbance, f = f0
2.2 mW/m 2
OHF02191

Sensitivity vs. duty cycle Ee = f (tp / T)


9.0 mW/m 2 8.0
OHF02188

Vertical directivity y

-10

0
1.6 1.4 1.2

10

OHF00246

-20

20

E e min

E e min
7.0
1.6

6.0 5.0 4.0

-30

1.0 0.8

30

-40
0.8

3.0

0.6 0.4 0.2

40 50 60 70 80 90 0.6

-50
2.0 1.0
0.0 0.0 0.4 0.8 1.2 kV/m 2.0

-60 -70 -80 -90 -0.6

0.0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.40 0.45

-0.4

-0.2

0.2

0.4

tp / T

Relative luminous intensity Srel = f (), TA = 25 oC


1.0
OHF02193

Sensitivity vs. bright ambient Ee min = f (E), = 950 nm, ambient


10 2 mW/m 2 E e min
OHF02190

Horizontal directivity x
-10

0
1.6 1.4

10

OHF00247

-20

20

S rel
0.8

10 1
0.6

1.2

-30

1.0 0.8

30

0.4

-40
10 0

0.6 0.4 0.2

40 50 60 70 80 90 0.6

-50
0.2

-60 -70 -80 -90 -0.6

0.0 800 850 900 950 1000 1050 nm 1150

10 -1 -2 10

10 -1

10 0

10 1 W/m 2 10 2

-0.4

-0.2

0.2

0.4

Semiconductor Group

SFH 506

Output pulse Ton, Toff = f(Ee)


1.0 ms
OHF00341

Ton , Toff
0.8

Ton
0.6

Toff

0.4

0.2

= 950 nm

0 -1 10 10 0

10 1

10 2

10 3 mW/m 2 10 5 Ee

Semiconductor Group