ITS 4880 R

Smart Power High-Side-Switch for Industrial Applications Eight Channels: 8 x 200 m

Features Output current 0,625 A per channel Short circuit protection Maximum current internally limited Overload protection Input protection Overvoltage protection (including load dump) Undervoltage shutdown with autorestart and hysteresis Switching inductive loads Thermal shutdown with restart Thermal independence of separate channels ESD - Protection Loss of GND and loss of Vbb protection Very low standby current Reverse battery protection Programmable input for CMOS or Vbb /2 Common diagnostic output ( current output ) for overtemperature Product Summary Overvoltage protection Operating voltage On-state resistance Operating temperature Vbb(AZ) Vbb(on) RON Ta 47 11...45 200 V V m

-30...+85 C

PG-DSO-36

Application

Output driver for industrial applications ( PLC ) All types of resistive, inductive and capacitive loads C or optocoupler compatible power switch for 24 V DC industrial applications Replaces electromechanical relays and discrete circuits

General Description
N channel vertical power FET with charge pump, ground referenced CMOS or Vbb/2 compatible input and common diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.
2006-03-09

Page 1

ITS 4880 R

Block Diagram
D IA G V bb LS U ndervoltage shutdow n w ith restart

Input Level S hifter

C om m on D iagnostic

V oltage source

O vervoltage protection

Logic each channel

Logic each channel

Logic each channel

C urrent lim it

G ate protection Tem perature sensor O U T1

C harge pum p Level shifter

Logic each channel

Lim it for unclam ped ind. loads

R ectifier O U T2 ESD Logic OUT3

IN 1 R IN IN 2

O U T4 IN 3 C hannel 2...7 IN 4 IN 5 IN 6 IN 7 C urrent lim it G ate protection T em perature sensor OUT8 O U T6 O U T5

O U T7

C harge pum p Level shifter R ectifier IN 8 ESD R IN

GND

Lim it for unclam ped ind. loads

Logic

m iniP R O FET

S ignal G N D

Page 2

2006-03-09

ITS 4880 R

Pin

Symbol

Function

1,2,4,5 3 6 7 8 9 10 11 12 13 14-18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 TAB

NC LS IN1 IN2 IN3 IN4 IN5 IN6 IN7 IN8 NC GND DIAG OUT8 OUT8 OUT7 OUT7 OUT6 OUT6 OUT5 OUT5 OUT4 OUT4 OUT3 OUT3 OUT2 OUT2 OUT1 OUT1 Vbb

not connected Enable pin for switching the input-levels to V bb/2 Input, activates channel 1 in case of logic high signal Input, activates channel 2 in case of logic high signal Input, activates channel 3 in case of logic high signal Input, activates channel 4 in case of logic high signal Input, activates channel 5 in case of logic high signal Input, activates channel 6 in case of logic high signal Input, activates channel 7 in case of logic high signal Input, activates channel 8 in case of logic high signal not connected Logic ground Common diagnostic output for overtemperature High-side output of channel 8 High-side output of channel 8 High-side output of channel 7 High-side output of channel 7 High-side output of channel 6 High-side output of channel 6 High-side output of channel 5 High-side output of channel 5 High-side output of channel 4 High-side output of channel 4 High-side output of channel 3 High-side output of channel 3 High-side output of channel 2 High-side output of channel 2 High-side output of channel 1 High-side output of channel 1 Positive power supply voltage

Page 3

2006-03-09

ITS 4880 R Maximum Ratings Parameter at Tj = -40...135 C, unless otherwise specified Symbol Vbb VIN VLS IL IIN Value Unit

Supply voltage Continuous input voltage2) Continuous voltage at LS-pin Load current (Short - circuit current, see page 6) Current through input pin (DC), each channel Reverse current through GND-pin 1)
Junction temperature Operating temperature Storage temperature

-1 1)...45 -10...V bb -1...Vbb self limited

5

A mA A C C C W J

-IGND
Tj Ta Tstg Ptot EAS

1.6 internal limited -30...+85 -40 ... +105 3.3

Power dissipation 3) Inductive load switch-off energy dissipation 4) single pulse, Tj = 125 C, IL = 0.625 A one channel active all channels simultaneously active ( each channel ) Load dump protection 4) VLoadDump5)= VA + VS
VIN= low or high

10 1
VLoaddump

V 90 117

td = 400 ms, RI = 2 , RL = 27 , VA = 13.5 V td = 350 ms, RI = 2 , RL = 47 , VA = 27 V

Electrostatic discharge voltage (Human Body Model)
according to ANSI EOS/ESD - S5.1 - 1993, ESD STM5.1 - 1998

VESD 1 5 IS

kV

Input pin, LS pin, Common diagnostic pin all other pins Continuous reverse drain current1)4), each channel
1defined by P tot 2At V > Vbb, the input current is not allowed to exceed 5 mA. IN

3 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for drain connection. PCB is vertical without blown air. 4not subject to production test, specified by design 5V Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 . Supply voltages higher than Vbb(AZ) require an external current limit for the GND pin, e.g. with a 150 resistor in GND connection. A resistor for the protection of the input is integrated.

Page 4

2006-03-09

ITS 4880 R Electrical Characteristics Parameter at Tj = -25...125C, Vbb=15...30V, unless otherwise specified Thermal Characteristics Symbol min. RthJC Rth(JA) Rth(JA) Values typ. max. Unit

Thermal resistance junction - case Thermal resistance @ min. footprint Thermal resistance @ 6 cm 2 cooling area 1)
Load Switching Capabilities and Characteristics

1.5 50 38

K/W

On-state resistance
Tj = 25 C, IL = 0.5 A Tj = 125 C

RON

m 150 270 50 75 1 1 200 320 100 150 2 2 V/s s

Turn-on time Turn-off time Slew rate on Slew rate off

to 90% VOUT to 10% VOUT 10 to 30% VOUT , 70 to 40% V OUT,

ton toff dV/dton -dV/dtoff

RL = 47 , V IN = 0 to 10 V RL = 47 , V IN = 10 to 0 V RL = 47 , V bb = 15 V RL = 47 , V bb = 15 V

1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for drain connection. PCB is vertical without blown air.

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2006-03-09

ITS 4880 R Electrical Characteristics Parameter at Tj = -25...125C, Vbb=15...30V, unless otherwise specified Operating Parameters Symbol min. Vbb(on) Vbb(under) Vbb(u rst) Vbb(under) Ibb(off) IGND IL(off) Values typ. max. Unit

Operating voltage Undervoltage shutdown Undervoltage restart Undervoltage hysteresis

Vbb(under) = Vbb(u rst) - Vbb(under)

11 7 -

0.5 50 5 5

45 10.5 11 150 12 10

Standby current Operating current 1) Leakage output current (included in Ibb(off))

VIN = low , each channel Protection Functions2)

A mA A

Initial peak short circuit current limit

Tj = -25 C, Vbb = 30 V, tm = 700 s Tj = 25 C Tj = 125 C

IL(SCp)

A 0.7 1.4 1.1 53 10 1.9 60 C K V

Repetitive short circuit current limit Tj = Tjt (see timing diagrams) Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL), Overvoltage protection 3) Thermal overload trip temperature 4) Thermal hysteresis

IL(SCr) VON(CL) Vbb(AZ) Tjt Tjt

47 47 135 -

1contains all input currents 2Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 3 see also V ON(CL) in circuit diagram on page 10 4 higher operating temperature at normal function for each channel available

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2006-03-09

ITS 4880 R Electrical Characteristics Parameter at Tj = -25...125C, Vbb=15...30V, unless otherwise specified Input Symbol min. VIN VIN(T+) VIN(T-) VIN(T+) VIN(T-) VIN(T) IIN(off) IIN(on) IIN(off) IIN(on) td(Vbbon) RI RLS Values typ. max. Vbb Unit

Continuous input voltage1) Input turn-on threshold voltage CMOS 2) Input turn-off threshold voltage CMOS 2) Input turn-on threshold voltage V bb/2 2) Input turn-off threshold voltage Vbb/22) Input threshold hysteresis Off state input current CMOS ( each channel ) On state input current CMOS ( each channel ) Off state input current V bb/2 ( each channel ) On state input current Vbb/2 ( each channel ) Input delay time at switch on Vbb Input resistance (see page 10) Internal pull down resistor at LS-pin 3)
Diagnostic Characteristics

-10 0.8 V bb/2-1

0.3 340 3 800

2.2 V bb/2+1

70 260 4 s
k

8 80 150 2 300

Common diagnostic output current 4) ( overtemperature of any channel )

Tj = 135 C

I diag

mA

Common diagnostic output leakage current

I diag(high)

1At V > Vbb, the input current is not allowed to exceed 5 mA. IN 2see page 9 3LS-pin is connected to V bb 4see page 10

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2006-03-09

ITS 4880 R Electrical Characteristics Parameter at Tj = -25...125C, Vbb=15...30V, unless otherwise specified Reverse Battery Symbol min. Values typ. max. Unit

Reverse battery voltage1)

RGND = 0 RGND = 150

-Vbb -VON 1 45 1.2

Diode forward on voltage

IF = 1.25 A, VIN = low , each channel

1defined by P tot

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2006-03-09

ITS 4880 R Truth table for common diagnostic pin ( LED-driver ):

Input level Normal operation Short circuit to GND Undervoltage Overtemperature L H L H L H L H

Output level L H L L L L L L

Diagnostic L L L L L L L H1)

L = no diagnostic output current H = diagnostic output current typ. 2 mA (see page 7)

Programmable input:

IN
V bb

Logic

LS
GND

Input Level Shifter

typ . 800 k

Functional description LS-Pin:

With using the LS-pin it is possible to change the input turn-on and -off threshold voltage between CMOS and half supply voltage level. Therefore you have either to connect the LS-pin to GND ( state 1 ) or to supply voltage ( state 2 ). If the LS-pin is not connected the input threshold voltages are automatically at CMOS level, caused by an internal pull down to GND with typ. 800k ( see circuit ). State 1: LS-Pin to GND State 2: LS-Pin to supply voltage
1toggeling with restart

CMOS - Input level Vbb/2 - Input level

Page 9

2006-03-09

ITS 4880 R Terms each channel

Ibb LS I IN V bb V IN1...8 Vbb PROFET I DIAG DIAG IL OUT1...8
OUT GND

Inductive and overvoltage output clamp each channel

+ Vbb V Z V ON

VON

IN

GND I GND VOUT

VON clamped to 47 V min.

Input circuit (ESD protection) each channel

V bb R IN I

Overvoltage protection of logic part

+ Vbb V IN

Z2

L o g ic
ST

I GND

I
GND

R GND
o p tio n a l

The use of ESD zener diodes as voltage clamp at DC conditions is not recommended

S ig n a l G N D

VZ2=Vbb(AZ)=47 V min., RI =3 k typ., RGND=150

Reverse battery protection each channel

- Vbb RI

Common diagnostic output

Vbb

IN

OUT L o g ic
Power In v e r s e D io d e

Logic

DIAG
GND RGND
o p ti o n a l S ig n a l G N D

RL
Power GND

ESD

RGND=150, RI=3k typ., Temperature protection is not active during inverse current Output current typ. 2 mA

Page 10

2006-03-09

ITS 4880 R GND disconnect Inductive Load switch-off energy dissipation, each channel
E bb

LS IN1...8

Vbb PROFET

DIAG OUT1...8
IN Vbb PROFET GND OUT

E AS E Load

GND V bb V IN V GND

=
ZL

{
RL

EL

ER

GND disconnect with GND pull up

Energy stored in load inductance: EL = * L * IL2
LS IN1...8 Vbb PROFET GND DIAG OUT1...8

While demagnetizing load inductance, the enrgy dissipated in PROFET is E AS = E bb + EL - ER = VON(CL) * iL(t) dt, with an approximate solution for RL > 0:

E AS =
V bb V IN V ST V GND

IL * R L IL * L ) * ( V b b + | V O U T ( C L )| ) * ln (1 + | V O U T ( C L )| 2 * RL

Vbb disconnect with charged inductive load

LS high IN1...8

Vbb PROFET GND

DIAG OUT1...8

bb

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2006-03-09

ITS 4880 R Typ. on-state resistance RON = f(Tj) ; Vbb = 15V ; V in = high
0.3

Typ. on-state resistance RON = f(Vbb ); IL = 0.5A ; Vin = high

0.3
125C

RON

0.2

RON

0.2
25C

0.15

0.15

0.1

0.1

-25C

0.05

0.05

0 -25

25

50

75

C Tj

125

0 10

15

20

25

30

35

40

V Vbb

50

Typ. initial peak short circuit current limit IL(SCp) = f(Tj) ; Vbb = 24V
2

Typ. input delay time at switch on V bb td(Vbbon) = f(Vbb); Tj = -25...125 C

0.5

A
1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -25 0 10 0.1 0.2

ms

td(Vbbon)
0 25 50 75

IL(SCp)

0.3

C Tj

125

15

20

25

30

35

40

V Vbb

50

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2006-03-09

ITS 4880 R Typ. turn on time ton = f(Tj ); RL = 47

100

Typ. turn off time toff = f(Tj); RL = 47

100

s
80 70

s
80 70

ton

60 50 40 30 20 10 0 -25

toff
0 25 50 75 125

60 50 40 30 20 10 0 -25

C Tj

25

50

75

C Tj

125

Typ. slew rate on dV/dton = f(T j) ; RL = 47 , Vbb = 15 V

1

Typ. slew rate off dV/dtoff = f(Tj); R L = 47 , V bb = 15 V

1.4

V/s V/s dV dton -dV dtoff

0.6 0.4 0.2 0.2 0 -25 0 25 50 75 125 1

0.8

0.6

0.4

C Tj

0 -25

25

50

75

C Tj

125

Page 13

2006-03-09

ITS 4880 R Typ. standby current Ibb(off) = f(Tj ) ; Vbb = 30V ; VIN = low
50

Typ. leakage current I L(off) = f(Tj) ; Vbb = 30V ; VIN = low

4

A
A
3

Ibb(off)

I L(off)

30

2.5

2 20

1.5

1 10 0.5

0 -25

25

50

75

C Tj

125

0 -25

25

50

75

C Tj

125

Typ. common diagnostic output current Idiag = f(Vbb ) ; Tj = 135C

3

Typ. internal pull down resistor at LS-pin RLS = f(Vbb ); VLS = Vbb
1.5

mA

125C

I diag

RLS

2.8

25C

0.75 2.7 0.5

-25C

2.6

0.25

2.5 10

15

20

25

30

35

45 V Vbb

0 10

15

20

25

30

35

40

V Vbb

50

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2006-03-09

ITS 4880 R Typ. input current @ CMOS level IIN(on/off) = f(Tj); Vbb = 15V; VIN = low/high VINlow 0,8V; VINhigh = 2,2V
50 50
-25C

Typ. input current @ CMOS level I IN = f(VIN); V bb = 15V

on

A
25C

IIN

IIN

30

off

30

125C

20

20

10

10

0 -25

25

50

75

C Tj

125

0 0

2.5

7.5

10

V VIN

15

Typ. input current @ Vbb/2 level IIN(on/off) = f(Tj); Vbb = 30V; VIN = low/high
180

Typ. input current @ V bb/2 level I IN = f(VIN); V bb = 30 V

200

A
on

-25C

140 120 100

off

150

25C

I IN

I IN

125

125C

100 80 75 60 40 20 0 -25 50

25

25

50

75

C Tj

125

0 0

10

15

20

V VIN

30

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2006-03-09

ITS 4880 R Typ. input threshold voltage @ CMOS level VIN(th) = f(Tj ) ; Vbb = 15V
2

Typ. input threshold voltage @ CMOS level VIN(th) = f(Vbb) ; Tj = 25C

2

V
on

on

1.6 1.5

VIN(th)

1.4 1.2 1 0.8 0.6

off

VIN(th)

off

1.25

0.75

0.5 0.4 0.2 0 -25 0.25

25

50

75

C Tj

125

0 10

15

20

25

30

35

40

V Vbb

50

Typ. input threshold voltage @ Vbb/2 level VIN(th) = f(Tj ) ; Vbb = 30V
16

Typ. input threshold voltage @ Vbb/2 level: LS-pin connected to V bb VIN(th) = f(V bb) ; Tj = 25C
25

V
on

15

20
off

VIN(th)

14.5

VIN(th)

on

17.5
off

14

15

13.5

12.5

13

10

12.5

7.5

12 -25

25

50

75

C Tj

125

5 10

15

20

25

30

35

40

V Vbb

50

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2006-03-09

ITS 4880 R Maximum allowable load inductance for a single switch off , calculated L = f(IL); Tjstart =125C, Vbb=24V, RL=0
45

Maximum allowable inductive switch-off energy, single pulse EAS = f(IL ); Tjstart = 125C, Vbb = 24V
3.5
all channels simultaneously active

H
35

all channels simultaneously active

2.5

EAS
2 1.5 1 0.5 300 400 500 600

30 25 20 15 10 5 0 200

mA IL

800

0 200

300

400

500

600

mA IL

800

Typ. transient thermal impedance Z thJA=f(tp) @ min. footprint

Typ. transient thermal impedance Z thJA=f(tp) @ 6cm 2 heatsink area

Parameter: D=tp/T
10
2

Parameter: D=tp/T
10 2

K/W

D = 0.5 D = 0.2

K/W
D = 0.5

10 1

10 1

D = 0.2 D = 0.1 D = 0.05

Z thJA

D = 0.05 D = 0.02 D = 0.01

10 0

Z thJA

D = 0.1

10 0 D = 0.02
D = 0.01

10 -1
D=0

10 -1
D=0

10 -2 -7 -6 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 10 10

10

10 -2 -7 -6 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 10 10

10

tp
Page 17

tp

2006-03-09

ITS 4880 R

Timing diagrams
Figure 1a: Vbb turn on:
IN

Figure 2b: Switching a lamp

IN

Vb b

OUT

D IA G t

DIAG
t d (V b b o n )

Figure 2a: Switching a resistive load, turn-on/off time and slew rate definition
IN

Figure 2c: Switching an inductive load

IN

O U T

90% t on d V /d to n 10% t d V / d to ff

VO U T

o ff

IL

IL

D IA G

D IAG

Page 18

2006-03-09

ITS 4880 R

Figure 3a: Turn on into short circuit, shut down by overtemperature, restart by cooling
IN

Figure 3b: Short circuit in on-state shut down by overtemperature, restart by cooling
IN

OUT

V
O u tp u t s h o r t to G N D

OUT

n o rm a l o p e r a tio n

O u tp u t s h o r t to G N D

L (S C p )

I
I L (S C r)

L (S C r)

D IA G t

D IA G t

Heating up of the chip may require several milliseconds, depending on external conditions.

Figure 4: Overtemperature: Reset if Tj < Tjt

IN

Figure 5: Undervoltage shutdown and restart

IN

V OUT
10,5V

Vbb

Vout

TJ
DIAG t

D IA G t
t d(Vbbon)

Page 19

2006-03-09

ITS 4880 R

Package and ordering code

all dimensions in mm

Ordering code: ITS 4880 R

A 15.9 0.1 1)

SP000219527
C
+0.07 0.25 -0.02

1.3

3.5 max.

1.10.1

110.15 1) 2.8

0.1

15.74 0.1 (Heatslug)

6.3 0.95 0.15 14.2 0.3

0.25 B

13.7 -0.2

0.1 C 36x Seating Plane

3.2 0.1

36
CODE

19

Index Marking

1 0.65 1 45

18 +0.13 0.25

5.9 0.1

0.25 M C A B

17 0.65 = 11.05
1)

Does not include plastic or metal protrusion of 0.15 max. per side

Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81669 Mnchen Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 20

5 0.3

+0.1

2006-03-09