BD233/235/237

BD233/235/237
Medium Power Linear and Switching Applications
Complement to BD 234/236/238 respectively

TO-126 2.Collector 3.Base

1. Emitter

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings TC=25C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : BD233 : BD235 : BD237 : BD233 : BD235 : BD237 : BD233 : BD235 : BD237 Value 45 60 100 45 60 80 45 60 100 5 2 6 25 150 - 65 ~ 150 Units V V V V V V V V V V A A W C C

VCEO

Collector-Emitter Voltage

VCER

Collector-Emitter Voltage

VEBO IC ICP PC TJ TSTG

Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Collector Dissipation (TC=25C) Junction Temperature Storage Temperature

Electrical Characteristics TC=25C unless otherwise noted

Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage : BD233 : BD235 : BD237 Collector Cut-off Current : BD233 : BD235 : BD237 IEBO hFE VCE(sat) VBE(on) fT Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter ON Voltage Current Gain Bandwidth Product VCB = 45V, IE = 0 VCB = 60V, IE = 0 VCB = 100V, IE = 0 VEB = 5V, IC = 0 VCE = 2V, IC = 150mA VCE = 2V, IC = 1A IC = 1A, IB = 0.1A VCE = 2V, IC = 1A VCE = 10V, IC = 250mA 3 40 25 0.6 1.3 V V MHz 100 100 100 1 A A A mA Test Condition IC = 100mA, IB = 0 Min. 45 60 80 Typ. Max. Units V V V

ICBO

* Pulse Test: PW=300s, duty Cycle=1.5% Pulsed

2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001

BD233/235/237

Typical Characteristics
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

1000

10

V CE = 2V

IC = 10 IB

hFE, DC CURRENT GAIN

100

V BE(sat)

V CE(sat)
0.1

10

1 0.01

0.01 0.1

10

0.1

10

IC [A], COLLECTOR CURRENT

I C[A], COLLECTOR CURRENT

Figure 1. DC current Gain

Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage

10

40

IC MAX. (Pulsed)

10 s
35

0 10

IC[A], COLLECTOR CURRENT

PC[W], POWER DISSIPATION

100

30

1m

IC MAX. (Continuous)
DC
1

BD233

BD235

BD237

25

20

15

10

0.1 1 10

0 0 25 50
o

75

100

125

150

175

VCE [V], COLLECTOR-EMITTER VOLTAGE

TC[ C], CASE TEMPERATURE

Figure 3. Safe Operating Area

Figure 4. Power Derating

2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001

BD233/235/237

Package Demensions

TO-126
0.10

3.90

8.00 0.30

3.25 0.20

14.20MAX

3.20 0.10

11.00

0.20

(1.00) 0.75 0.10 1.60 0.10 0.75 0.10

0.30

(0.50) 1.75 0.20

#1 2.28TYP [2.280.20] 2.28TYP [2.280.20]

13.06

16.10

0.20

0.50 0.05

+0.10

Dimensions in Millimeters
2001 Fairchild Semiconductor Corporation Rev. A1, June 2001

TRADEMARKS
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PACMAN POP Power247 PowerTrench QFET QS QT Optoelectronics Quiet Series SLIENT SWITCHER SMART START

Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TruTranslation TinyLogic UHC UltraFET VCX

STAR*POWER is used under license

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Preliminary

No Identification Needed

Full Production

Obsolete

Not In Production

2001 Fairchild Semiconductor Corporation

Rev. H3