Technische Information / Technical Information

IGBT-Module
IGBT-Modules BSM50GP60

Elektrische Eigenschaften / Electrical properties

Höchstzulässige Werte / Maximum rated values
Diode Gleichrichter/ Diode Rectifier
Periodische Rückw. Spitzensperrspannung
VRRM 1600 V
repetitive peak reverse voltage
Durchlaßstrom Grenzeffektivwert
IFRMSM 40 A
RMS forward current per chip
Dauergleichstrom
TC = 80°C Id 50 A
DC forward current
Stoßstrom Grenzwert tP = 10 ms, T vj = 25°C IFSM 315 A
surge forward current tP = 10 ms, T vj = 150°C 260 A
2
Grenzlastintegral tP = 10 ms, T vj = 25°C It 500 A2s
2 2
I t - value tP = 10 ms, T vj = 150°C 340 As

Transistor Wechselrichter/ Transistor Inverter

Kollektor-Emitter-Sperrspannung
VCES 600 V
collector-emitter voltage
Kollektor-Dauergleichstrom Tc = 80 °C IC,nom. 50 A
DC-collector current TC = 25 °C IC 70 A
Periodischer Kollektor Spitzenstrom
tP = 1 ms, T C = 80 °C ICRM 100 A
repetitive peak collector current
Gesamt-Verlustleistung
TC = 25°C Ptot 250 W
total power dissipation
Gate-Emitter-Spitzenspannung
VGES +/- 20V V
gate-emitter peak voltage

Diode Wechselrichter/ Diode Inverter

Dauergleichstrom
Tc = 80 °C IF 50 A
DC forward current
Periodischer Spitzenstrom
tP = 1 ms IFRM 100 A
repetitive peak forw. current
Grenzlastintegral 2
2 VR = 0V, tp = 10ms, Tvj = 125°C It 760 A2s
I t - value

Transistor Brems-Chopper/ Transistor Brake-Chopper

Kollektor-Emitter-Sperrspannung
VCES 600 V
collector-emitter voltage
Kollektor-Dauergleichstrom TC = 80 °C IC,nom. 25 A
DC-collector current TC = 25 °C IC 35 A
Periodischer Kollektor Spitzenstrom
tP = 1 ms, TC = 80°C ICRM 50 A
repetitive peak collector current
Gesamt-Verlustleistung
TC = 25°C Ptot 130 W
total power dissipation
Gate-Emitter-Spitzenspannung
VGES +/- 20V V
gate-emitter peak voltage

Diode Brems-Chopper/ Diode Brake-Chopper

Dauergleichstrom
Tc = 80 °C IF 12,5 A
DC forward current
Periodischer Spitzenstrom
tP = 1 ms IFRM 25 A
repetitive peak forw. current

prepared by: Andreas Schulz date of publication:17.09.1999

approved by: M.Hierholzer revision: 4

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Technische Information / Technical Information
IGBT-Module
IGBT-Modules BSM50GP60

Modul Isolation/ Module Isolation

Isolations-Prüfspannung RMS, f = 50 Hz, t = 1 min.
VISOL 2,5 kV
insulation test voltage NTC connected to Baseplate

Elektrische Eigenschaften / Electrical properties

Charakteristische Werte / Characteristic values
Diode Gleichrichter/ Diode Rectifier min. typ. max.
Durchlaßspannung
Tvj = 150°C, I F = 50 A VF - 1,3 1,35 V
forward voltage
Schleusenspannung
Tvj = 150°C V(TO) - - 0,8 V
threshold voltage
Ersatzwiderstand
Tvj = 150°C rT - - 10,5 mΩ
slope resistance
Sperrstrom
Tvj = 150°C, V R = 1600 V IR - 2 - mA
reverse current
Modul Leitungswiderstand, Anschlüsse-Chip
TC = 25°C RAA’+CC’ - 5 - mΩ
lead resistance, terminals-chip

Transistor Wechselrichter/ Transistor Inverter min. typ. max.

Kollektor-Emitter Sättigungsspannung VGE = 15V, Tvj = 25°C, IC = 50 A VCE sat - 1,95 2,55 V
collector-emitter saturation voltage VGE = 15V, Tvj = 125°C, IC = 50 A - 2,2 - V
Gate-Schwellenspannung
VCE = VGE, Tvj = 25°C, IC = 1,0 mA VGE(TO) 4,5 5,5 6,5 V
gate threshold voltage
Eingangskapazität f = 1MHz, Tvj = 25°C
Cies - 2,8 - nF
input capacitance VCE = 25 V, VGE = 0 V
Kollektor-Emitter Reststrom VGE = 0V, Tvj = 25°C, V CE = 600 V ICES - 1,5 500 µA
collector-emitter cut-off current VGE = 0V, Tvj =125°C, V CE = 600 V - 2,0 - mA
Gate-Emitter Reststrom
VCE = 0V, VGE =20V, Tvj =25°C IGES - - 300 nA
gate-emitter leakage current
Einschaltverzögerungszeit (ind. Last) IC = INenn, V CC = 300 V
turn on delay time (inductive load) VGE = ±15V, Tvj = 25°C, R G = 22 Ohm td,on - 50 - ns
VGE = ±15V, Tvj = 125°C, R G = 22 Ohm - 50 - ns
Anstiegszeit (induktive Last) IC = INenn, V CC = 300 V
rise time (inductive load) VGE = ±15V, Tvj = 25°C, R G = 22 Ohm tr - 55 - ns
VGE = ±15V, Tvj = 125°C, R G = 22 Ohm - 55 - ns
Abschaltverzögerungszeit (ind. Last) IC = INenn, V CC = 300 V
turn off delay time (inductive load) VGE = ±15V, Tvj = 25°C, R G = 22 Ohm td,off - 260 - ns
VGE = ±15V, Tvj = 125°C, R G = 22 Ohm - 275 - ns
Fallzeit (induktive Last) IC = INenn, V CC = 300 V
fall time (inductive load) VGE = ±15V, Tvj = 25°C, R G = 22 Ohm tf - 30 - ns
VGE = ±15V, Tvj = 125°C, R G = 22 Ohm - 40 - ns
Einschaltverlustenergie pro Puls IC = INenn, V CC = 300 V
turn-on energy loss per pulse VGE = ±15V, Tvj = 125°C, R G = 22 Ohm Eon - 2,3 - mWs
LS = 75 nH
Abschaltverlustenergie pro Puls IC = INenn, V CC = 300 V
turn-off energy loss per pulse VGE = ±15V, Tvj = 125°C, R G = 22 Ohm Eoff - 1,7 - mWs
LS = 75 nH
Kurzschlußverhalten tP ≤ 10µs, VGE ≤ 15V, RG = 22 Ohm
SC Data Tvj≤125°C, VCC = 360 V ISC - 200 - A
dI/dt = 3000 A/µs

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Technische Information / Technical Information
IGBT-Module
IGBT-Modules BSM50GP60

Elektrische Eigenschaften / Electrical properties

Charakteristische Werte / Characteristic values
min. typ. max.
Modulinduktivität
LσCE - - 100 nH
stray inductance module
Modul Leitungswiderstand, Anschlüsse-Chip
TC = 25°C RCC’+EE’ - 7 - mΩ
lead resistance, terminals-chip

Diode Wechselrichter/ Diode Inverter min. typ. max.

Durchlaßspannung VGE = 0V, Tvj = 25°C, IF = 50 A VF - 1,25 1,7 V
forward voltage VGE = 0V, Tvj = 125°C, IF = 50 A - 1,2 - V
Rückstromspitze IF=INenn, - diF/dt = 1150A/µs
peak reverse recovery current VGE = -10V, Tvj = 25°C, V R = 300 V IRM - 35 - A
VGE = -10V, Tvj = 125°C, V R = 300 V - 46 - A
Sperrverzögerungsladung IF=INenn, - diF/dt = 1150A/µs
recovered charge VGE = -10V, Tvj = 25°C, V R = 300 V Qr - 3,4 - µAs
VGE = -10V, Tvj = 125°C, V R = 300 V - 6,2 - µAs
Abschaltenergie pro Puls IF=INenn, - diF/dt = 1150A/µs
reverse recovery energy VGE = -10V, Tvj = 25°C, V R = 300 V ERQ - 0,8 - mWs
VGE = -10V, Tvj = 125°C, V R = 300 V - 1,3 - mWs

Transistor Brems-Chopper/ Transistor Brake-Chopper min. typ. max.

Kollektor-Emitter Sättigungsspannung VGE = 15V, Tvj = 25°C, IC = 25,0 A VCE sat - 2,2 2,75 V
collector-emitter saturation voltage VGE = 15V, Tvj = 125°C, IC = 25,0 A - 2,5 - V
Gate-Schwellenspannung
VCE = VGE, Tvj = 25°C, IC = 0,5 mA VGE(TO) 4,5 5,5 6,5 V
gate threshold voltage
Eingangskapazität f = 1MHz, Tvj = 25°C
Cies - 1,1 - nF
input capacitance VCE = 25 V, VGE = 0 V
Kollektor-Emitter Reststrom VGE = 0V, Tvj = 25°C, V CE = 600 V ICES - 0,7 500 µA
collector-emitter cut-off current VGE = 0V, Tvj = 125°C, V CE = 600 V - 1,0 - mA
Gate-Emitter Reststrom
VCE = 0V, VGE = 20V, Tvj = 25°C IGES - - 300 nA
gate-emitter leakage current

Diode Brems-Chopper/ Diode Brake-Chopper min. typ. max.

Durchlaßspannung Tvj = 25°C, IF = 25,0 A VF - 1,6 2,05 V
forward voltage Tvj = 125°C, IF = 25,0 A - 1,65 - V

NTC-Widerstand/ NTC-Thermistor min. typ. max.

Nennwiderstand
rated resistance TC = 25°C R25 - 5 - kΩ

Abweichung von R100

deviation of R100 TC = 100°C, R 100 = 493 Ω ∆R/R -5 5 %

Verlustleistung TC = 25°C P25 20 mW

power dissipation
B-Wert R2 = R1 exp [B(1/T2 - 1/T1)] B25/50 3375 K
B-value

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Technische Information / Technical Information
IGBT-Module
IGBT-Modules BSM50GP60

Thermische Eigenschaften / Thermal properties

min. typ. max.
Innerer Wärmewiderstand Gleichr. Diode/ Rectif. Diode RthJC - - 1 K/W
thermal resistance, junction to case Trans. Wechsr./ Trans. Inverter - - 0,5 K/W
Diode Wechsr./ Diode Inverter - - 0,8 K/W
Trans. Bremse/ Trans. Brake - - 1 K/W
Diode Bremse/ Diode Brake - - 2,3 K/W
Übergangs-Wärmewiderstand Gleichr. Diode/ Rectif. Diode λ Paste=1W/m*K RthCK - 0,08 - K/W
thermal resistance, case to heatsink Trans. Wechsr./ Trans. Inverter λ grease=1W/m*K - 0,04 - K/W
Diode Wechsr./ Diode Inverter - 0,08 - K/W
Höchstzulässige Sperrschichttemperatur
Tvj - - 150 °C
maximum junction temperature
Betriebstemperatur
Top -40 - 125 °C
operation temperature
Lagertemperatur
Tstg -40 - 125 °C
storage temperature

Mechanische Eigenschaften / Mechanical properties

Innere Isolation
Al2O3
internal insulation
CTI
225
comperative tracking index
Anzugsdrehmoment f. mech. Befestigung M 3 Nm
mounting torque ±10%
Gewicht
G 180 g
weight

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Technische Information / Technical Information
IGBT-Module
IGBT-Modules BSM50GP60

Ausgangskennlinienfeld Wechselr. (typisch) CI = f (VCE)

Output characteristic Inverter (typical) VGE = 15 V

100

90

80
Tj = 25°C
70 Tj = 125°C

60
IC [A]

50

40

30

20

10

0
0 0,5 1 1,5 2 2,5 3 3,5 4 4,5 5

VCE [V]

Ausgangskennlinienfeld Wechselr. (typisch) CI = f (VCE)

Output characteristic Inverter (typical) Tvj = 125°C

100

90 VGE = 20V
VGE = 15V
80
VGE = 12V
70 VGE = 10V
VGE = 9V
60
IC [A]

50

40

30

20

10

0
0 0,5 1 1,5 2 2,5 3 3,5 4 4,5 5

VCE [V]

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IGBT-Module
IGBT-Modules BSM50GP60

Übertragungscharakteristik Wechselr. (typisch) I

C = f (VGE)
Transfer characteristic Inverter (typical) VCE = 20 V

100

90

80

70 Tj = 25°C
Tj = 125°C
60
IC [A]

50

40

30

20

10

0
0 2 4 6 8 10 12 14

VGE [V]

Durchlaßkennlinie der Freilaufdiode Wechselr. (typisch) FI = f (VF)

Forward characteristic of FWD Inverter (typical)

100

90

80

70 Tj = 25°C
Tj = 125°C
60
IF [A]

50

40

30

20

10

0
0 0,2 0,4 0,6 0,8 1 1,2 1,4 1,6

VF [V]

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IGBT-Module
IGBT-Modules BSM50GP60

Schaltverluste Wechselr. (typisch) Eon = f (IC), Eoff = f (IC), Erec = f (IC) VCC = 300 V
Switching losses Inverter (typical) Tj = 125°C, V GE = ±15 V, RGon = RGoff = 22 Ohm

7
Eon
Eoff
6
Erec

5
E [mWs]

0
0 20 40 60 80 100 120

IC [A]

Schaltverluste Wechselr. (typisch) Eon = f (RG), Eoff = f (RG), Erec = f (RG)

Switching losses Inverter (typical) Tj = 125°C, V GE = +-15 V , I c = Inenn , VCC = 300 V

3,5 Eon
Eoff
Erec
3

2,5
E [mWs]

1,5

0,5

0
0 5 10 15 20 25 30 35 40 45 50

RG [Ω]

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IGBT-Module
IGBT-Modules BSM50GP60

Transienter Wärmewiderstand Wechselr. ZthJC = f (t)

Transient thermal impedance Inverter

Zth-IGBT
Zth-FWD
ZthJC [K/W]

0,1

0,01
0,001 0,01 0,1 1 10

t [s]

Sicherer Arbeitsbereich Wechselr. (RBSOA) I

C = f (VCE)
Reverse bias save operating area Inverter (RBSOA)Tvj = 125°C, VGE = ±15V, RG = 22 Ohm

120

100

80
IC,Modul
IC,Chip
IC [A]

60

40

20

0
0 100 200 300 400 500 600 700

VCE [V]

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IGBT-Module
IGBT-Modules BSM50GP60

Ausgangskennlinienfeld Brems-Chopper-IGBT (typisch) CI = f (VCE)

Output characteristic brake-chopper-IGBT (typical) VGE = 15 V

50

45

40 Tj = 25°C
Tj = 125°C
35

30
IC [A]

25

20

15

10

0
0 0,5 1 1,5 2 2,5 3 3,5 4 4,5

VCE [V]

Durchlaßkennlinie der Brems-Chopper-Diode (typisch) FI = f (VF)

Forward characteristic of brake-chopper-FWD (typical)
50

45

40

35
Tj = 25°C
30 Tj = 125°C
IF [A]

25

20

15

10

0
0 0,5 1 1,5 2 2,5

VF [V]

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IGBT-Module
IGBT-Modules BSM50GP60

Durchlaßkennlinie der Gleichrichterdiode (typisch) FI = f (VF)

Forward characteristic of Rectifier Diode (typical)

100

90

80

70
Tj = 25°C
60 Tj = 150°C
IF [A]

50

40

30

20

10

0
0 0,2 0,4 0,6 0,8 1 1,2 1,4 1,6 1,8 2

VF [V]

NTC- Temperaturkennlinie (typisch) R = f (T)

NTC- temperature characteristic (typical)

100000
Rtyp

10000
R[Ω]

1000

100
0 20 40 60 80 100 120 140 160

TC [°C]

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IGBT-Module
IGBT-Modules BSM50GP60

Schaltplan/ Circuit diagram

21 22 8 9

20 18 16
19 17 15 NTC
1 2 3 7 4 5 6

14 13 12 11
23 24 10

Gehäuseabmessungen/ Package outlines

Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine

Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.

This technical information specifies semiconductor devices but promises no characteristics. It is

valid in combination with the belonging technical notes.

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