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3) Assembly of every integrated circuit on the wafer into a substrate to have an electrical connection. (front line processes)
Assembly Flow
The process of putting the semicon chip inside a package to make it reliable and convenient to use is known as semiconductor package assembly, or simply 'assembly'. In general, an assembly process would consist of the following steps: Die preparation sawing.
Wafer cut into individual chip by means of
Die attach
Attaching chip unto the support structure using conductive epoxy or through Eutectic process.
Wire Bonding
Connecting the Silicon chip unto its external leads to form a complete circuit using Au wire.
Encapsulation
Serves as the body of the package which serves as protection from Chemical and Physical damages.
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Die preparation is the process by which the wafer is singulated into individual dice in preparation for assembly.
2. Wafer sawing
3. Cleaning
Wafer mounting
is the process of providing support to the wafer to facilitate the processing of the wafer from Wafer Saw through Die Attach.
During wafer mounting, the wafer and a wafer frame are simultaneously attached on a wafer or dicing tape.
Wafer sawing
is the process of cutting the wafer into individual dice for assembly.
Hubtype Blade
4.Saw-through cutting
5.Saw dust accumulation
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Die Attach
Also known as Die Mount or Die Bond, is the process of attaching the silicon chip to the die pad or die cavity of the support structure (e.g., the leadframe, pcb) of the semiconductor package. There are two common die attach processes, i.e., adhesive die attach and eutectic die attach. Both of these processes use special die attach equipment and die attach tools to mount the die.
Eutectic D/A
-a process in which the chip backside itself has lead (Pb) which serves to bind chip unto the support structure.
Adhesive D/A
-a process in which conductive epoxy (e.g., Silver) used to attach chip unto the support structure.
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DIE
FILLET
BLT
Die Basic building block of the circuit or semicon package.
Silicon chip is the most commonly used semiconductor.
DIE PAD
Fillet the mass of epoxy climbing the edges of the die. BLT ( Bond Line Thickness ) thickness of the epoxy material between
the die and die pad. Serves as contact mostly cathode side of the chip to the die pad & cushion to prevent die stress.
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Support Structure
Is the skeleton of the package, providing mechanical support to the die or chip during its assembly into a finished product. It consists of a die paddle, to which the die is attached, and leads which serve as the means for external connections to the outside world. Types of support structure
Lead frame
PCB
Metal Header
Ceramic Header
Epoxy Application
Chip PRS
Chip Ejection
Epoxy Cure
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Epoxy Application
Epoxy dispensing
Upon epoxy alignment, epoxy is adjusted per machine X/Y/Z location. Volume however is by adjusting dispensing delays or air pressure.
Epoxy Stamping
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Rubber tips and Collet Machine will perform Chip PRS then bond arm will go to pre-pick position and will apply its actual force as per set-up done. BF can be obtained by adjusting spring tensioner located on bond arm.
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Epoxy Cure
Chip Attach Oven curing
Chip sensor Bond arm will pass thru a light source to detect if chip is present on Rubber tip, once machine detects chip presence, it will directly go to die pad to attach. Force is applied on the chip depending on spring tensioner actual BF. Curing will take place after completing die attach.
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Die Cracking - occurrence of fracture anywhere in the die. Common Causes in the context of Die Attach: excessive die attach voids, die overhang or insufficient die attach coverage, insufficient bond line thickness, excessive die ejection force on the wafer tape, absence of die attach voids.
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Bond Lifting - lifting of the first or second bond from the die or leadfinger, respectively. From the DA process point of view, this is often due to resin bleeding of the die attach material into the bond pads or leadfingers, inhibiting good intermetallic formation. Lifted bond/ball N material P material Bond pad
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DST/DFT tool should be equal or greater than chip size There should be 50% of Silicon left on die pad after DFT Epoxy on chip perimeter should cover at least 75% Chip alignment should be follow device requirement Maximum Epoxy Fillet
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WIRE BONDING
is a process of providing electrical connection between the chip and the external leads of the device using very fine bonding wires and a combination of heat, pressure and/or ultrasonic energy at specified time. Wire bonding is a solid phase welding process, where the two metallic materials (wire and pad surface) are brought into intimate contact. Once the surfaces are in intimate contact, electron sharing or inter-atomic diffusion takes place, resulting in the formation of wire bond.
Bonding Theory
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Intermetallics
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Gold atom
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Aluminum atom
HEAT
ULTRASONIC SCRUB
ULTRASONIC SCRUB
Are very thin wires of high purity (99.99% or 4N) used as interconnect between the chip and lead frame leads. Typical wires used as interconnects are Gold (Au), Silver (Ag), Copper (Cu) and Aluminum (Al). Consideration in choosing bonding wires Package type e.g. plastic package, hermetic Diameter e.g. 0.8 mil, 1.0 mil Tensile strength e.g. 15 17 grams, 31-34 grams Elongation property e.g. 2 8%, 9 13% Heat Affected Zone e.g. 1.5 2.0 mils, 3.0 3.5 mils
Capillary Dimensions
Tip Diameter Hole Diameter or Size Chamfer Diameter Inside Chamfer Inside Chamfer Angle Face Angle Outside Radius
Free Air Ball (FAB) - A resultant formation on tip of the wire which is achieved after EFO firing.
EFO (Electronic Flame Off) - A spark coming from a EFO Torch/Wand which is a capacitance discharge to
form FAB.
Ball Bond (1st Bond)- The bond formed after the Free Air Ball is squashed onto the bonding
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Bond force - The amount of force exerted on the wire while the Ultrasonic Energy is being applied.
Time - The duration that the ultrasonic energy and force are applied to the bond.
Heater Block Temperature (HBT) - The temperature of the work holder that serves as surface softener' to
First Bond
First bond or ball bond is the bonding on the bond pad of the device.
Second Bond Second bond or wedge bond is the bonding done most of the time on leads of leadframe.
Power 2 Force 2 Time 2 Temperature
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Reverse height - Sets the amount of wire fed out above first bond before reverse motion starts.
Reverse distance/Angle - movement of unit usually up / down in motion caused by improper set-up of
Reverse Angle Reverse Angle
Clamp or Insert
Horizontal Distance Reverse Distance
WIRE CLAMP
GOLD WIRE
CAPILLARY
LEAD/POST
CHIP HEAT
Ultrasonic Scrub
Force
HEAT
REVERSE HEIGHT
Ultrasonic Scrub
Force
HEAT
The purpose of this test is to measure bond strengths, evaluate bond strength distributions, or determine compliance with specified bond strength requirements of a semiconductor device
A Ball lift B Stitch lift C Metal lift at pad D Metal lift at post E Span break F Ball neck break G Stitch heel break
Wedge heel Wedge Ball bond Loop VHE / Neck
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Tight loop is called if the wire exit is less than 2mils long vertically before starting to arc for the wedge bond.
Sagged wire is a defect when wire touches the chip edge or near chip edge by less than one wirebond diameter.
1.5 to 5X wire
1.2 to 5X wire
Small/insufficient wedge is the term when the length of wedge bond is less than 1.5times the wire diameter or when the width is less than 1.2times the wire diameter. When a wirebond is misplaced on top of another wirebond or bond over bond, it is called stacked bond.
D = wire diameter
Minimum height is 1/2X wire diameter
Wrong bond placement occurs if the ball bond is less than 75% inside the bond pad. But if bond pad is equal or smaller than the ball, the criteria is 50% inside.
Smashed ball is reject if the ball bond height falls below one-half of wire diameter.
Smashed ball
Lifted wedge
Camera Clamp Fingers Clamp Pre-heater Main heater Wire tensioner Clamp Transducer horn Transducer screw Capillary EFO Torch
Leads PRS
Chip PRS
FAB Formation
Reverse Distance
Reverse Heig5ht
Pre-bond position 1
Reverse Angle
Pre-bond position 2
Tail formation