CGH40006P: 6 W, RF Power Gan Hemt

CGH40006P
6 W, RF Power GaN HEMT

Crees CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40006P ideal for linear and compressed amplifier circuits. The transistor is available in a solder-down, pill package.
Package Type s: 440109 PNs: CGH40 006P
FEATURES
Up to 6 GHz Operation 13 dB Small Signal Gain at 2.0 GHz 11 dB Small Signal Gain at 6.0 GHz 8 W typical at PIN = 32 dBm 65 % Efficiency at PIN = 32 dBm 28 V Operation
APPLICATIONS
2-Way Private Radio Broadband Amplifiers Cellular Infrastructure Test Instrumentation Class A, AB, Linear amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms
Y PRELIMINAR ch 2011 Rev 2.0 Mar
Subject to change without notice. www.cree.com/wireless
Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature
Parameter Drain-Source Voltage Gate-to-Source Voltage Storage Temperature Operating Junction Temperature Maximum Forward Gate Current Soldering Temperature1 Thermal Resistance, Junction to Case2 Case Operating Temperature2
Symbol VDSS VGS TSTG TJ IGMAX TS RJC TC
Rating 84 -10, +2 -65, +150 225 2.1 245 9.5 -40, +150
Units Volts Volts C C mA C C/W C
Note: 1 Refer to the Application Note on soldering at www.cree.com/products/wireless_appnotes.asp 2 Measured for the CGH40006P at PDISS = 8 W.
Electrical Characteristics (TC = 25C)

Characteristics DC Characteristics1 Gate Threshold Voltage Gate Quiescent Voltage Saturated Drain Current Drain-Source Breakdown Voltage
2
Symbol
Min.
Typ.
Max.
Units
Conditions
VGS(th) VGS(Q) IDS VBR
-3.8 1.7 120
-3.3 -3.0 2.1
-2.3
VDC VDC A VDC
VDS = 10 V, ID = 2.1 mA VDS = 28 V, ID = 100 mA VDS = 6.0 V, VGS = 2.0 V VGS = -8 V, ID = 2.1 mA
RF Characteristics (TC = 25C, F0 = 2.0 GHz unless otherwise noted) Small Signal Gain Power Output at PIN = 32 dBm Drain Efficiency3 Output Mismatch Stress Dynamic Characteristics Input Capacitance Output Capacitance Feedback Capacitance CGS CDS CGD 3.0 1.1 0.1 pF pF pF VDS = 28 V, Vgs = -8 V, f = 1 MHz VDS = 28 V, Vgs = -8 V, f = 1 MHz VDS = 28 V, Vgs = -8 V, f = 1 MHz GSS POUT
11.5 7.0 53
13 9 65
10 : 1
dB W % Y
VDD = 28 V, IDQ = 100 mA VDD = 28 V, IDQ = 100 mA VDD = 28 V, IDQ = 100 mA, PIN = 32 dBm No damage at all phase angles, VDD = 28 V, IDQ = 100 mA, PIN = 32 dBm
VSWR
Notes: 1 Measured on wafer prior to packaging. 2 Measured in CGH40006P-TB. 3 Drain Efficiency = POUT / PDC
Copyright 2009-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc.
CGH40006P Rev 2.0 Preliminary
Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/wireless
Typical Performance
Small Signal Gain vs Frequency at 28 V of the CGH40006P in the CGH40006P-TB

S-parameter 28 V
20 18 16 14 12
Input & Output Return Losses vs Frequency at 28 V of the CGH40006P in the CGH40006P-TB
S-parameter 28 V
0 -2 -4 -6 -8
Gain (dB)
Gain (dB)
10 8 6 4 2 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0
-10 -12 -14 -16 -18 -20 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 S11 S22
Frequency (GHz)
Frequency (GHz)
Small Signal Gain vs Frequency at 20 V of the CGH40006P in the CGH40006P-TB

S-parameter 20 V
20 18 16 14 12
Input & Output Return Losses vs Frequency at 20 V of the CGH40006P in the CGH40006P-TB
S-parameter 20 V
0 -2 -4 -6 -8
Gain (dB)
10 8 6 4 2 0 0.0 1.0 2.0
Gain (dB)
-10 -12 -14 -16 -18 -20 0.0 1.0 2.0 S22 S11
Frequency (GHz)
3.0
4.0
5.0
6.0
7.0
Frequency (GHz)
3.0
4.0
5.0
6.0
7.0
Typical Performance
Power Gain vs Output Power as a Function of Frequency of the CGH40006P in the CGH40006P-TB Gain vs Output I VDD = 28 V,power, 2,3,4,5 & mA = 100 6 GHz DQ
20 18 16 14 12 2.0 GHz 3.0 GHz 4.0 GHz 5.0 GHz 6.0 GHz
Gain (dB)
10 8 6 4 2 0 20 25 30 35 40
Output Power (dBm)
Drain Efficiency vs Output Power as a Function of Frequency of the CGH40006P in the CGH40006P-TB Eff vs V, 2,3,4,5 100 VDD = 28Pout,IDQ = 7 6 GHzmA
70% 2.0 GHz 3.0 GHz 4.0 GHz 5.0 GHz 6.0 GHz
60%
50%
Drain Efficiency
40%
30%
20%
10%
0% 20 25 30 Output Power (dBm) 35 40
Typical Performance
Power Gain vs Frequency of the CGH40006P in the CGH40006P-TB at32PIN = 32 dBm, VDD = 28 V Gain @ Pin dBm
10 9 8 7 6 5 4 3 2 1 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Power Gain vs Frequency of the CGH40006P in the CGH40006P-TBGain 20V-Pin30dBm dBm, VDD = 20 V at PIN = 30 Power
10 9 8 7 6 5 4 3 2 1 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Gain (dB)
Frequency (GHz)
Gain (dB)
Frequency (GHz)
Output Power vs Frequency of the CGH40006P in the CGH40006P-TB @ PinPIN = 32 dBm, VDD = 28 V Power (w) at 32 dBm
12
Output Power vs Frequency of the CGH40006P in the CGH40006P-TB Pout @ 20V = 30 dBm, VDD = 20 V at PIN
12
10
10
Output Power (W)
Output Power (W)

2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Frequency (GHz)
Frequency (GHz)
Drain Efficiency vs Frequency of the CGH40006P in the CGH40006P-TBPin 32 PIN = 32 dBm, VDD = 28 V at dBm EFF @
70% 60%
Drain Efficiency vs Frequency of the CGH40006P in the CGH40006P-TB 20V, PinIN = 30 dBm, VDD = 20 V EFF @ at P =30 dBm
70% 60%
50%
50%
Drain Efficiency
Drain Efficiency
40%
40%
30%
30%
20%
20%
10%
10%
0% 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
0% 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Frequency (GHz)
Frequency (GHz)
Typical Performance
Third Order Intermodulation Distortion vs Average Output Power as a Function of Frequency of the CGH40006P in the CGH40006P-TB VDD IM 3 vs. V, IDQ = 60 mA = 28 total output power
0.0
-10.0
2.0 GHz 3.0 GHz 4.0 GHz 5.0 GHz 6.0 GHz
-20.0
IM3 (dBc)
-30.0
-40.0
-50.0
-60.0 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37
Output Power (dBm)
Simulated Maximum Available Gain and K Factor of the CGH40006P VDD = 28 V, IDQ = 100 mA
MAG (dB)
K Factor
Typical Noise Performance
Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH40006P VDD = 28 V, IDQ = 100 mA
Minimum Noise Figure (dB)
Electrostatic Discharge (ESD) Classifications
Parameter Human Body Model Charge Device Model
Symbol HBM CDM
Class 1A > 250 V 1 < 200 V
Test Methodology JEDEC JESD22 A114-D JEDEC JESD22 C101-C
Noise Resistance (Ohms)
Source and Load Impedances

D Z Source G Z Load
S
Frequency (MHz) 1000 2000 3000 4000 5000 6000 Z Source 13.78 + j6.9 4.78 + j1.78 2.57 - j6.94 3.54 - j14.86 4.42 - j25.8 7.1 - j42.7 Z Load 61.5 + j47.4 19.4 + j39.9 12.57 + j23.1 9.44 + j11.68 9.78 + j4.85 9.96 - j4.38
Note 1. VDD = 28V, IDQ = 100mA in the 440109 package. Note 2. Optimized for power gain, PSAT and PAE. Note 3. When using this device at low frequency, series resistors should be used to maintain amplifier stability.
CGH40006P Power Dissipation De-rating Curve

Power Dissipation derating Curve vs max Tcase
9 8 7
Power Dissipation (W)
6 5 Note 1 4 3 2 1 0 0 25 50 75 100 125 150 175 200 225 250
Maximum Case Temperature (C)
Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2).
CGH40006P-TB Demonstration Amplifier Circuit Bill of Materials
Designator R1 R2 R3 C1 C2 C10 C4,C11 C6,C13 C7,C14 C8 C15 C16 J3,J4 J1 Q1
Description RES, AIN, 0505, 470 Ohms (5% tolerance) RES, AIN, 0505, 10 Ohms (5% tolerance) RES, AIN, 0505, 150 Ohms (5% tolerance) CAP, 2.0 pF +/-0.1 pF, 0603, ATC 600S CAP, 4.7 pF +/-0.1 pF, 0603, ATC 600S CAP, 3.6 pF +/-0.1 pF, 0603, ATC 600S CAP, 8.2 pF +/-0.25, 0603, ATC 600S CAP, 470 pF +/-5%, 0603, 100 V CAP, 33000 pF, CER, 100V, X7R, 0805 CAP, 10 uf, 16V, SMT, TANTALUM CAP, 1.0 uF +/-10%, CER, 100V, X7R, 1210 CAP, 33 uF, 100V, ELECT, FK, SMD CONN, SMA, STR, PANEL, JACK, RECP HEADER RT>PLZ .1CEN LK 5POS PCB, RO5880, 20 MIL CGH40006P
Qty 1 1 1 1 1 1 2 2 2 1 1 1 2 1 1 1
CGH40006P-TB Demonstration Amplifier Circuit
CGH40006P-TB Demonstration Amplifier Circuit Schematic
CGH40006P-TB Demonstration Amplifier Circuit Outline
10
Typical Package S-Parameters for CGH40006P (Small Signal, VDS = 28 V, IDQ = 100 mA, angle in degrees)
Frequency 500 MHz 600 MHz 700 MHz 800 MHz 900 MHz 1.0 GHz 1.1 GHz 1.2 GHz 1.3 GHz 1.4 GHz 1.5 GHz 1.6 GHz 1.7 GHz 1.8 GHz 1.9 GHz 2.0 GHz 2.1 GHz 2.2 GHz 2.3 GHz 2.4 GHz 2.5 GHz 2.6 GHz 2.7 GHz 2.8 GHz 2.9 GHz 3.0 GHz 3.2 GHz 3.4 GHz 3.6 GHz 3.8 GHz 4.0 GHz 4.2 GHz 4.4 GHz 4.6 GHz 4.8 GHz 5.0 GHz 5.2 GHz 5.4 GHz 5.6 GHz 5.8 GHz 6.0 GHz
Mag S11 0.905 0.889 0.877 0.867 0.860 0.854 0.849 0.845 0.842 0.839 0.837 0.835 0.833 0.832 0.830 0.829 0.828 0.827 0.826 0.825 0.824 0.823 0.821 0.820 0.819 0.818 0.816 0.813 0.810 0.807 0.804 0.801 0.797 0.793 0.789 0.785 0.780 0.776 0.772 0.768 0.764
Ang S11 -96.56 -107.98 -117.55 -125.66 -132.61 -138.66 -143.98 -148.73 -153.01 -156.90 -160.49 -163.81 -166.92 -169.85 -172.62 -175.27 -177.81 179.75 177.38 175.07 172.82 170.61 168.44 166.30 164.18 162.08 157.91 153.76 149.58 145.35 141.05 136.66 132.15 127.50 122.70 117.72 112.55 107.17 101.58 95.76 89.70
Mag S21 18.30 16.39 14.76 13.37 12.19 11.18 10.31 9.56 8.90 8.33 7.82 7.37 6.96 6.60 6.27 5.98 5.71 5.46 5.24 5.03 4.84 4.67 4.51 4.36 4.22 4.09 3.85 3.65 3.47 3.31 3.18 3.05 2.94 2.85 2.76 2.68 2.62 2.55 2.50 2.44 2.40
Ang S21 120.62 113.31 106.99 101.43 96.46 91.94 87.79 83.92 80.29 76.84 73.56 70.40 67.36 64.41 61.54 58.74 56.00 53.32 50.68 48.09 45.53 43.00 40.50 38.02 35.57 33.13 28.31 23.53 18.78 14.05 9.32 4.57 -0.20 -5.01 -9.86 -14.79 -19.78 -24.86 -30.03 -35.30 -40.69
Mag S12 0.023 0.025 0.026 0.027 0.028 0.028 0.028 0.028 0.028 0.028 0.028 0.028 0.028 0.028 0.028 0.028 0.028 0.027 0.027 0.027 0.027 0.026 0.026 0.026 0.026 0.026 0.025 0.025 0.025 0.024 0.024 0.024 0.025 0.025 0.026 0.027 0.029 0.030 0.032 0.035 0.037
Ang S12 35.87 29.63 24.39 19.92 16.05 12.66 9.64 6.92 4.46 2.22 0.15 -1.75 -3.51 -5.15 -6.67 -8.08 -9.40 -10.61 -11.73 -12.77 -13.71 -14.57 -15.34 -16.02 -16.62 -17.13 -17.89 -18.30 -18.38 -18.13 -17.60 -16.82 -15.89 -14.87 -13.89 -13.04 -12.42 -12.13 -12.22 -12.75 -13.73
Mag S22 0.456 0.429 0.408 0.393 0.381 0.374 0.368 0.366 0.365 0.365 0.367 0.369 0.373 0.376 0.381 0.386 0.391 0.396 0.401 0.407 0.412 0.418 0.423 0.428 0.434 0.439 0.449 0.458 0.467 0.474 0.481 0.488 0.493 0.497 0.500 0.503 0.504 0.505 0.504 0.503 0.501
Ang S22 -52.76 -58.98 -64.31 -68.96 -73.11 -76.87 -80.34 -83.57 -86.61 -89.49 -92.24 -94.88 -97.43 -99.88 -102.27 -104.58 -106.84 -109.04 -111.19 -113.29 -115.36 -117.38 -119.36 -121.32 -123.24 -125.13 -128.84 -132.46 -136.00 -139.48 -142.91 -146.30 -149.67 -153.02 -156.37 -159.74 -163.14 -166.59 -170.10 -173.70 -177.41
Download this s-parameter file in .s2p format at http://www.cree.com/products/wireless_s-parameters.asp

11
Product Dimensions CGH40006P (Package Type 440109)
12
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Typical parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customers technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, NC 27703 www.cree.com/wireless Ryan Baker Marketing Cree, Wireless Devices 919.287.7816 Tom Dekker Sales Director Cree, Wireless Devices 919.313.5639
13

CGH40006P: 6 W, RF Power Gan Hemt

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CGH40006P

6 W, RF Power GaN HEMT

Package Type s: 440109 PNs: CGH40 006P

Y PRELIMINAR ch 2011 Rev 2.0 Mar

Subject to change without notice. www.cree.com/wireless

Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature

Symbol VDSS VGS TSTG TJ IGMAX TS RJC TC

Units Volts Volts C C mA C C/W C

Electrical Characteristics (TC = 25C)

VGS(th) VGS(Q) IDS VBR

-3.8 1.7 120

-3.3 -3.0 2.1

VDC VDC A VDC

CGH40006P Rev 2.0 Preliminary

Small Signal Gain vs Frequency at 28 V of the CGH40006P in the CGH40006P-TB

10 8 6 4 2 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0

Small Signal Gain vs Frequency at 20 V of the CGH40006P in the CGH40006P-TB

10 8 6 4 2 0 0.0 1.0 2.0

CGH40006P Rev 2.0 Preliminary

Output Power (dBm)

0% 20 25 30 Output Power (dBm) 35 40

CGH40006P Rev 2.0 Preliminary

Output Power (W)

Output Power (W)

0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0

0% 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0

0% 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0

CGH40006P Rev 2.0 Preliminary

Output Power (dBm)

CGH40006P Rev 2.0 Preliminary

Typical Noise Performance

Minimum Noise Figure (dB)

Electrostatic Discharge (ESD) Classifications

Parameter Human Body Model Charge Device Model

Symbol HBM CDM

Class 1A > 250 V 1 < 200 V

Test Methodology JEDEC JESD22 A114-D JEDEC JESD22 C101-C

CGH40006P Rev 2.0 Preliminary

Noise Resistance (Ohms)

Source and Load Impedances

CGH40006P Power Dissipation De-rating Curve

Power Dissipation (W)

6 5 Note 1 4 3 2 1 0 0 25 50 75 100 125 150 175 200 225 250

Maximum Case Temperature (C)

CGH40006P Rev 2.0 Preliminary

CGH40006P-TB Demonstration Amplifier Circuit Bill of Materials

Designator R1 R2 R3 C1 C2 C10 C4,C11 C6,C13 C7,C14 C8 C15 C16 J3,J4 J1 Q1

CGH40006P-TB Demonstration Amplifier Circuit

CGH40006P Rev 2.0 Preliminary

CGH40006P-TB Demonstration Amplifier Circuit Schematic

CGH40006P-TB Demonstration Amplifier Circuit Outline

CGH40006P Rev 2.0 Preliminary

Download this s-parameter file in .s2p format at http://www.cree.com/products/wireless_s-parameters.asp

CGH40006P Rev 2.0 Preliminary

Product Dimensions CGH40006P (Package Type 440109)

CGH40006P Rev 2.0 Preliminary

CGH40006P Rev 2.0 Preliminary

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