Section 8: Metallization Jaeger Chapter 7

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Multilevel Metallization

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Multilevel Metallization Components

FOX

Si substrate

( InteMetal Oxide e.g. BPSG. Low-K dieletric) (e.g. PECVD Si Nitride)

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Interconnect RC Time Delay

Interconnect Resistance RI =R/L = / (WAlTAl)

Interconnect-Substrate Capacitance CV C/L = WAl ox / Tox Interconnect-Interconnect Capacitance CL C/L = TAl ox / SAl

* Values per unit length L

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Interconnect Requirements low ohmic resistance

interconnects material has low resistivity

low contact resistance to semiconductor device reliable long-term operation

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Resistivity of Metals
Commonly Used Metals Aluminum Titanium Tungsten Copper Less Frequently Utilized Nickel Platinum Paladium

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Ohmic Contact Formation

Aluminum to p-type silicon forms an ohmic contact [Remember Al is ptype dopant] Aluminum to n-type silicon can form a rectifying contact (Schottky barrier diode) Aluminum to n+ silicon yields a tunneling contact

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Contact Resistance Rc
Heavily doped Semiconductor surface Metal Contact Area For a uniform current density flowing across the contact area

Rc = c / (contact area )

c c

of Metal-Si contacts ~ 1E-5 to 1E-7 -cm2 of Metal-Metal contacts < 1E-8

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-cm2

Contact Resistivity
Specific contact resistivity J c V at V~0
1

2 m * s c = exp h

B N

B is the Schottky barrier height N = surface doping concentration c = specfic contact resistivity in ohm-cm2

m = electron mass h =Plancks constant = Si dielectric constant Approaches to lowering of contact resistance: 1) Use highly doped Si as contact semicodnuctor 2) Choose metal with lower Schottky barrier height
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Aluminum Spiking and Junction Penetration

Silicon absorption into the aluminum results in aluminum spikes Spikes can short junctions or cause excess leakage Barrier metal deposited prior to metallization Sputter deposition of Al - 1% Si

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Alloying of Contacts
Alloy to Obtain Very Low Contact Resistivity Specific Contact Resistivity

c = 1.2 x10 6 cm 2
Contact Resistance RC RC =

c
A

A = contact area

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Electromigration

High current density causes voids to form in interconnections Electron wind causes movement of metal atoms
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Electromigration
Copper added to aluminum to improve lifetime (Al, 4% Cu, 1% Si)
E 1 exp A kT J2 J = current density E A = activation energy MTF = mean time to failure MTF

Heavier metals (e. g. Cu) have lower activation energy

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Metal Deposition Techniques

Sputtering has been the technique of choice
high deposition rate capability to deposit complex alloy compositions capability to deposit refractory metals uniform deposition on large wafers capability to clean contact before depositing metal

CVD processes have recently been developed

(e.g. for W, TiN, Cu) better step coverage selective deposition is possible plasma enhanced deposition is possible for lower deposition temperature

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Metal CVD Processes

TiN
used as barrier-metal layer deposition processes:

6TiCl 4 + 8NH 3 6TiN + 24HCl + N 2 2TiCl 4 + 2 NH 3 + H 2 2TiN + 8 HCl

2TiCl 4 + N 2 + 4 H 2 2TiN + 8 HCl
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Electroplating

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Dual Damascene Process

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Salicides
Self-Aligned Silicide on silicon and polysilicon Often termed Salicide

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Low-K Dielectrics

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Porous low-k dielectric examples

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