Matched N Channel JFET Pairs

Product Summary
Part Number
U440 U441

Siliconix

U440/441

VGS(off) (V)
-1 to -6 -1 to -6

V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA)

-25 -25 4.5 4.5 -1 -1

nt s
G2 6 5 D2 4 S2

Features
D D D D D D Two Chip Design High Slew Rate Low Offset/Drift Voltage Low Gate Leakage: 1 pA Low Noise High CMRR: 85 dB.

Benefits

Description

The U440/441 are matched pairs of JFETs mounted in a single TO 71 package. This two chip design reduces parasitics and gives better performance at very high frequencies while ensuring extremely tight matching. These devices are an excellent choice for use as wideband differential amplifiers in demanding test and measurement applications.

Ad ro nic C

Absolute Maximum Ratings

Gate Drain, Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . -25 V Gate Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "50 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . 300_C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 200_C P-37405Rev. C (07/04/94) Operating Junction Temperature . . . . . . . . . . . . . . . . . . -55 to 150_C Power Dissipation : Per Sidea . . . . . . . . . . . . . . . . . . . . . . . 250 mW Totalb . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW Notes a. Derate 2 mW/_C above 25_C b. Derate 4 mW/_C above 25_C

om po ne
TO 71 S1 1 2 3 G1 Top View D1

D Minimum Parasitics Ensuring Maximum High Frequency Performance D Improved Op Amp Speed, Settling Time Accuracy D Minimum Input Error/Trimming Requirement D Insignificant Signal Loss/Error Voltage D High System Sensitivity D Minimum Error with Large Input Signal

The hermetically sealed TO 71 package is available with full military screening per MIL S 19500 (see Military Information). For similar products in SO 8 packaging see the SST440/SST441 data sheet. For low noise opions, see the SST/U401 series data sheet. For low leakage alternatives, see the U421/423 data sheet.

Gm bH

jVGS1 - VGS2j Typ (mV)

10 20

Applications

D Wideband Differential Amps D High Speed, Temp Compensated, Single Ended Input Amps D High Speed Comparators D Impedance Converters

U440/441
Specificationsa
Parameter Static
Gate Source Breakdown Voltage Gate Source Cutoff Voltage Saturation Drain Currentc Gate Reverse Current Gate Operating Current Gate Source Forward Voltage V(BR)GSS VGS(off) IDSS IGSS IG VGS(F) IG = -1 mA, VDS = 0 V VDS = 10 V, ID = 1 nA VDS = 10 V, VGS = 0 V VGS = -15 V, VDS = 0 V TA = 125_C VDG = 10 V, ID = 5 mA TA = 125_C IG = 1 mA , VDS = 0 V

Siliconix
Limits

Symbol

Test Conditions

Typb

Gm bH
U440 U441

Min

Max

Min

Max

Unit

-35

-25 -1 6

-25 -1 6

V mA pA nA pA nA V

-3.5 15

-6 30

-6 30

-1 -2 -1

-500 -500

-500 -500

Dynamic
Common Source Forward Transconductance Common Source Output Conductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Equivalent Input Noise Voltage gfs gos Ciss Crss en

om po ne

nt s
-0.3 0.7 6 4.5 70 3 1 4 6 20 0.97 0.97 85

VDS = 10 V, ID = 5 mA S f = 1 kHz

9 200

4.5

9 200

mS mS

VDS = 10 V, ID = 5 mA S f = 1 MHz VDS = 10 V, ID = 5 mA f = 10 kHz

pF nV Hz

Matching
Differential Gate Source Voltage Gate Source Voltage Differential Change with Temperature Saturation Drain Current Ratiod |VGS1 VGS2|

Ad ro nic C

VDG = 10 V, ID = 5 mA

10

20

mV mV/_C

D|VGS1 VGS2| DT I DSS1 I DSS2 gfs1 gfs2

VDG = 10 V, ID = 5 mA TA = -55 to 125_C VDS = 10 V, VGS = 0 V

Transconductance Ratiod Common Mode Rejection Ratio

VDS = 10 V, ID = 5 mA f = 1 kHz

CMRR

VDG = 5 to 10 V, ID = 5 mA

dB NZFD

Notes a. TA = 25_C unless otherwise noted. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. Pulse test: PW v300 ms duty cycle v3%. d. Assumes smaller value in the numerator.

P-37405Rev. C (07/04/94)

Siliconix

U440/441
20 g fs - Forward Transconductance (mS) 100 nA 10 nA I G - Gate Leakage 1 nA 100 pA 10 pA 1 pA

Typical Characteristics
50 I DSS - Saturation Drain Current (mA) IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDS = 10 V, VGS = 0 V f = 1 kHz

40

16 12

30

Gm bH
Gate Leakage Current
IG(on) @ ID TA = 125_C ID = 10 mA IGSS @ 125_C 1 mA 10 mA TA = 25_C 0 4 8 12 VDG - Drain Gate Voltage (V)

Drain Current and Transconductance vs. Gate Source Cutoff Voltage

20

gfs

1 mA

IDSS

nt s
0.1 pA 30 I D - Drain Current (mA) 24 18 12 6 0 0 2 15 I D - Drain Current (mA) 12 9 6 3 0 0 0.2

10 0 0

4 0 -10

IGSS @ 25_C 16 20

-2

-4

-6

-8

VGS(off) - Gate Source Cutoff Voltage (V)

10

Output Characteristics
VGS(off) = -2 V

om po ne

Output Characteristics
VGS(off) = -5 V VGS = 0 V -0.5 V -1.0 V -1.5 V -2.0 V -2.5 V -3.0 V -3.5 V

I D - Drain Current (mA)

VGS = 0 V -0.2 V -0.4 V -0.6 V -0.8 V -1.0 V -1.2 V

2 0

Ad ro nic C
0 2 4 6 8

10

10

VDS - Drain Source Voltage (V)

VDS - Drain Source Voltage (V)

Output Characteristics

Output Characteristics
VGS(off) = -5 V -0.5 V -1.0 V -1.5 V -2.0 V -2.5 V -3.0 V -3.5 V VGS = 0 V

VGS(off) = -2 V

VGS = 0 V

I D - Drain Current (mA)

-0.2 V -0.4 V -0.6 V -0.8 V -1.0 V -1.2 V

3 2

1 0

0.2

0.4

0.6

0.8

0.4

0.6

0.8

VDS - Drain Source Voltage (V) P-37405Rev. C (07/04/94)

VDS - Drain Source Voltage (V)

U440/441
Typical Characteristics (Cont'd)
10

Siliconix

Transfer Characteristics
VGS(off) = -2 V VDS = 10 V I D - Drain Current (mA)

30

Transfer Characteristics
VGS(off) = -5 V

I D - Drain Current (mA)

8 TA = -55_C 6 25_C

24

18

125_C

12

125_C

0 0 -0.4 -0.8 -1.2 -1.6 -2 VGS - Gate Source Voltage (V)

nt s
0 0 -1 -2 10 g fs - Forward Transconductance (mS) 8 6 25_C 4 2 0 0 -1 -2 VDS = 10 V f = 1 kHz rDS(on) - Drain Source On Resistance ( W ) 200 160 120 VGS(off) = -5 V 80 40 0 1

Gm bH
VDS = 10 V TA = -55_C 25_C -3 -4 -5 VGS(off) = -5 V TA = -55_C 125_C -3 -4 -5 TA = 25_C 10 ID - Drain Current (mA) P-37405Rev. C (07/04/94) 100

VGS - Gate Source Voltage (V)

10 g fs - Forward Transconductance (mS)

Transconductance vs. Gate Source Voltage

VGS(off) = -2 V VDS = 10 V f = 1 kHz

TA = -55_C 25_C 125_C

2 0

Ad ro nic C
-0.4 -0.8 -1.2 -1.6 -2 VGS - Gate Source Voltage (V)

50

Circuit Voltage Gain vs. Drain Current

g fs RL AV + 1 ) R g L os + 10 V ID

40 A V - Voltage Gain

Assume VDD = 15 V, VDS = 5 V RL

om po ne
10

Transconductance vs. Gate Source Voltage

VGS - Gate Source Voltage (V)

On Resistance vs. Drain Current

VGS(off) = -2 V

30

20

VGS(off) = -5 V

VGS(off) = -2 V

10 0

0.1

1 ID - Drain Current (mA)

Siliconix

U440/441
Crss - Reverse Feedback Capacitance (pF) 5

Typical Characteristics (Cont'd)

10 Ciss - Input Capacitance (pF) f = 1 MHz 8 f = 1 MHz 4

6 VDS = 5 V 4 2 VDS = 0 V VDS = 10 V

-4

-8

-12

-16

-20

nt s
0 0 -4 100 TA = 25_C VDS = 10 V ID = 10 mA 10 (mS) -bfs bfg 1 0.1 100 100 10 (mS) bog, bos 1 gog, gos 0.1 100

Gm bH
VDS = 5 V VDS = 0 V VDS = 10 V -8 -12

Common Source Input Capacitance vs. Gate Source Voltage

Common Source Reverse Feedback Capacitance vs. Gate Source Voltage

-16

-20

VGS - Gate Source Voltage (V)

VGS - Gate Source Voltage (V)

100

Input Admittance
TA = 25_C VDS = 10 V ID = 10 mA gig bis

om po ne

Forward Admittance

10 (mS)

-gfg

gfs

big

Ad ro nic C
0.1 100

gis

200

500

1000

200

500

1000

f - Frequency (MHz)

f - Frequency (MHz)

10

Reverse Admittance

Output Admittance
TA = 25_C VDS = 10 V ID = 10 mA

TA = 25_C VDS = 10 V ID = 10 mA

-brs

(mS)

-brg

0.1

-grs

-grg

grg

0.01 100 200 500 1000 f - Frequency (MHz) P-37405Rev. C (07/04/94)

200

500

1000

f - Frequency (MHz)

U440/441
Typical Characteristics (Cont'd)
50 en - Noise Voltage (nV Hz)

Siliconix

Equivalent Input Noise Voltage vs. Frequency

VDS = 10 V g os - Output Conductance (mS)

150

Output Conductance vs. Drain Current

VGS(off) = -5 V VDS = 10 V f = 1 kHz

40 30 20 ID = 10 mA

120

ID = 1 mA

90

60

nt s
0 0.1 VGS(off) = -5 V 8 6 25_C 4 2 0 0.1

10 0

30

10

100

1k f - Frequency (Hz)

10 k

100 k

Gm bH
TA = -55_C 25_C 125_C 1 10 VDS = 10 V f = 1 kHz TA = -55_C 125_C 1 ID - Drain Current (mA) 10 P-37405Rev. C (07/04/94)

ID - Drain Current (mA)

rDS(on) - Drain Source On Resistance ( W )

200

On Resistance and Output Conductance vs. Gate Source Cutoff Voltage

gos

160

160

120

120

80

rDS

80

40 0

Ad ro nic C
-2 -4 -6 -8 VGS(off) - Gate Source Cutoff Voltage (V)

rDS @ ID = 1 mA, VGS = 0 V gos @ VDS = 10 V, VGS = 0 V f = 1 kHz

40

0 -10

g fs - Forward Transconductance (mS)

om po ne
200 10 g os - Output Conductance (mS)

Common Source Forward Transconductance vs. Drain Current

This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.