Coventor Ware Tutorial

Lab #1 A General Introduction to Coventor including Fabrication & Simulation of a Comb Drive
Kevin Banovic
June 4, 2004 University of Windsor Computer and Electrical Engineering Department
Section I
Device Fabrication with CoventorWare (Process Editor)
RESEARCH CENTRE FOR INTEGRATED MICROSYSTEMS UNIVERSITY OF WINDSOR
CoventorWare Remote Access

Open a new Terminal Shell Type xhost + ssh username@remote_host.vlsi setenv DISPLAY terminal.ends.uwindsor.ca:0.0 coventorware
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MicroElectroMechanical Systems
Slide 3
Getting Started with CoventorWare

Once loaded, CoventorWare will prompt the user to select an existing project or create a new one Create a new project by clicking on the new project icon and type the project name This loads the main screen where the all the construction and simulation tools can be accessed (refer to figure on slide 5) Select Create a New Process and click the process editor icon We are now ready to begin fabrication of the combdrive
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CoventorWare Main Screen
Module Tabs
Process Editor
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Slide 5
Process Editor Main Screen
Add a sacrificial etch step Add an etch step Add a deposit step
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Slide 6
Step 0: Substrate Definition

By default, the wafer is defined as Step 0 upon entering the process editor The default material is silicon with a width of 50um and a mask name of GND The mask name refers to the layer that will represent the wafer in the layout editor, which the user will define once the process table has been completed
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Slide 7
Step 1: Deposit Silicon Nitride

Click Add a deposit step icon Choose the following properties Material: Si3N4 Type: Thickness: Conformal 1um
Silicon Nitride is used as electrical insulation between the substrate and the device shuttle to avoid the device collapsing to the substrate due to pull-in
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Slide 8
Step 2: Deposit Polysilicon

Click Add a deposit step icon Choose the following properties Material: Polysilicon Type: Conformal Thickness: 2um This layer of polysilicon will be used for the combdrive footings and will elevate the device 2um from the wafer surface
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Slide 9
Step 3: Etch Polysilicon

Click Add an etch step icon Choose the following properties Type: Front, Last Layer Mask Name/Polarity: Footings / + Depth: 2um This step will etch away all of the polysilicon except the footings (anchors)
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Slide 10
Step 4: Deposit Sacrificial Layer of PSG

Click Add a deposit step icon Choose the following properties Material: PSG Type: Planar Thickness: 2um This sacrificial layer will be used to fill the areas of polysilicon that were etched in the previous step Planar deposition is used here so that PSG molecules do not accumulate on the side walls creating shells (In practice, you would compensate this by creating another mask taking it into account)
Step 5: Etch PSG

Click Add an etch step icon Choose the following properties Type: Front, Last Layer Mask Name/Polarity: Footings / Depth: 2um This step will etch away the PSG that was deposited on top of the anchors so that the surface is flat and ready for the structure to be built on top
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Slide 12
Step 6: Deposit Polysilicon

Click Add a deposit step icon Choose the following properties Material: Polysilicon Type: Conformal Thickness: 2um This layer of polysilicon is the main structural material for the comb-drive
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Slide 13
Step 7: Etch Polysilicon

Click Add an etch step icon Choose the following properties Type: Front, Last Layer Mask Name/Polarity: Structure / + Depth: 2um This step will etch away all of the polysilicon except the comb-drive structure
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Slide 14
Step 8: Sacrificial Etch of PSG

Click Add sacrificial etch icon Choose the following properties Material: PSG This is the final step process table and is used to etch away all of the PSG used for the sacrificial layer Once all steps have been completed, save the process as a unique name
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Slide 15
Completed Process Table
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Slide 16
Section II
Device Fabrication with CoventorWare (Designer Module)
CoventorWare Designer Module

Now that the process has been defined, it is time to construct the masks and mesh the structure using the Designer module Click on the Designer tab in the main window to enter the Designer module (refer to figure on slide 19) Click on the Layout Editor icon to launch the layout editor to define the masks needed for the comb-drive
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Slide 18
Designer Module
Layout Editor Preprocessor (Meshing)
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Slide 19
Layout Editor Main Screen
Layer Select
Origin
Command Prompt
Mask Creation
The Layout Editor is similar to popular CAD tools such as AutoCAD Objects can be created by clicking the appropriate icon in the toolbar or by entering commands and coordinates using the command prompt The mask names specified in the Process Editor appear as layers here and can be selected through the drop down menu in the left-hand corner Refer to handout for comb-drive schematics
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Slide 21
Completed Comb-Drive Layout
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Slide 22
CoventorWare Preprocessor
The Preprocessor is used to mesh the structure and define surfaces/layers for simulation Here we will hide layers, define conductors, name faces/layers and create a mesh To enter the Preprocessor, click the Preprocessor icon in the Designer Module (refer to slide 19) As can be seen in the following slide, sacrificial layers are automatically hidden upon entering
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Slide 23
Preprocessor Module Main Screen

Face Selection Icon
Expanded Solid Model Directory
Sacrificial PSG layer is automatically hidden
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Slide 24
Preprocessor
After expanding the solid model directory, hide the substrate and silicon nitride layers by right-clicking on the layer and selecting Hide Selection This allows the user to remove unnecessary layers for simulation purposes To add layers to the mesh model (initially empty), right-click on the appropriate layer and select Add to mesh model The user will notice that the layers are now added to the mesh model and to conductors
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Slide 25
Preprocessor (Cont.)
To set more descriptive names for each conductor, right-click on the appropriate conductor and choose Set name (use Rotor/Stator) Now we need to name individual faces in the mesh model in order to apply loads during simulation This can be done by using the Face selection mode icon and clicking the individual faces and then rightclicking and choosing Set name Name the three footing bottoms (anchor#), the top of the rotor and the top of the stator (rotate structure)
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Slide 26
Mesher Settings
Now, the mesher settings can be chosen by rightclicking the appropriate region in the mesh model directory and selecting Mesher settings Change the mesh type to Manhattan Bricks and use 10um for each dimension (refer to figures on slide 29) To generate the mesh, click MeshGenerate Mesh
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Slide 27
Mesher Settings (Cont.)
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Slide 28
Completed Meshed Structure
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Slide 29
Section III
Finite Element Simulations (Analyzer)
Electrostatic Analysis
Now that the device has been meshed, the structure is ready for finite element analysis (FEA) Click on the Analyzer tab in the main window to enter the Analyzer module (refer to figure on slide #32) Select the MemElectro solver to perform electrostatic analysis Choose Start a new analysis Click on the Solver Setup icon to launch the MemElectro settings menu
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Slide 31
Analyzer Menu
Analysis Type
Solver Setup & Result Selection

MemElectro Solver Setup

Use the default settings and click next in order to set the boundary conditions and/or loads (static analysis just apply loads) Click ConductorBCs to apply voltage loads to rotor & stator shown in the figure below Click run to start simulation
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Slide 33
Electrostatic Analysis Capacitance

Electrostatic results include capacitance and ElectroBCs tables as well as 3D charge density plots Charge density plots can be viewed by clicking View 3D plots in the analysis result window and capacitance results can be viewed by choosing capacitance and clicking the table icon
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Slide 34
Electrostatic Analysis Charge Density
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Slide 35
Mechanical Analysis (Modal Analysis)

Modal Analysis will now be performed to determine the natural frequency and modes of operation of the comb-actuator Select the MemMech solver to perform mechanical analysis Choose Start a new analysis Click on the Solver Setup icon to launch the MemMech settings menu
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Slide 36
MemMech Solver Setup

In the MemMech settings, add Modal to Additional Analysis Choose to specify Number of modes and set the number of modes to 6 Click on next and select SurfaceBCs Here we need to specify boundary conditions but do not apply any voltage loads as we are looking for natural frequency
MemMech Solver Setup (Cont.)

Use the following patches to fix the anchors
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Slide 38
Mechanical Results Frequency Modes

Mechanical results include mechDomain, modeDomain and rxnForces tables as well as modal displacement and modal shape animations The following modeDomain table shows modal frequencies for the specified number of modes
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Slide 39
Mechanical Results Modal Displacement

To view modal displacement, click View 3D results and choose Modal Shapes from the Coventor menu Choose the 4th mode and set exaggeration to 15 Click Apply and then Play to view animation
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Slide 40
Mechanical Results Modal Displacement
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Slide 41
Electromechanical Analysis
Electromechanical analysis will now be performed using the CoSolveEM solver so that we can apply a voltage load to the comb-actuator to obtain combined mechanical and electrostatic results Select the CoSolveEM solver to perform electromechanical analysis Choose Start a new analysis Click on the Solver Setup icon to launch the CoSolveEM settings menu
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Slide 42
CoSolveEM Settings
Choose Relation as the iteration method and Voltage as the independent variable Click Next and then choose ConductorBCs Fix the anchors as in the mechanical analysis and apply a 50V to the stator using a LoadPatch Click next to begin simulation
CoSolveEM Settings Patches
Change to 50V
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Slide 44
Electromechanical Results
All of the electrostatic and mechanical tables are available as well as an additional displacement table within the CoSolveEM results Click View 3D results to view charge density and displacement plots (toggle plots in main window)
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Slide 45
Electromechanical Results Displacement
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Slide 46

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Lab #1 A General Introduction to Coventor including Fabrication & Simulation of a Comb Drive

Device Fabrication with CoventorWare (Process Editor)

RESEARCH CENTRE FOR INTEGRATED MICROSYSTEMS UNIVERSITY OF WINDSOR

CoventorWare Remote Access

RESEARCH CENTRE FOR INTEGRATED MICROSYSTEMS UNIVERSITY OF WINDSOR

Getting Started with CoventorWare

RESEARCH CENTRE FOR INTEGRATED MICROSYSTEMS UNIVERSITY OF WINDSOR

CoventorWare Main Screen

RESEARCH CENTRE FOR INTEGRATED MICROSYSTEMS UNIVERSITY OF WINDSOR

Process Editor Main Screen

RESEARCH CENTRE FOR INTEGRATED MICROSYSTEMS UNIVERSITY OF WINDSOR

Step 0: Substrate Definition

RESEARCH CENTRE FOR INTEGRATED MICROSYSTEMS UNIVERSITY OF WINDSOR

Step 1: Deposit Silicon Nitride

RESEARCH CENTRE FOR INTEGRATED MICROSYSTEMS UNIVERSITY OF WINDSOR

Step 2: Deposit Polysilicon

RESEARCH CENTRE FOR INTEGRATED MICROSYSTEMS UNIVERSITY OF WINDSOR

Step 3: Etch Polysilicon

RESEARCH CENTRE FOR INTEGRATED MICROSYSTEMS UNIVERSITY OF WINDSOR

Step 4: Deposit Sacrificial Layer of PSG

RESEARCH CENTRE FOR INTEGRATED MICROSYSTEMS UNIVERSITY OF WINDSOR

Step 5: Etch PSG

RESEARCH CENTRE FOR INTEGRATED MICROSYSTEMS UNIVERSITY OF WINDSOR

Step 6: Deposit Polysilicon

RESEARCH CENTRE FOR INTEGRATED MICROSYSTEMS UNIVERSITY OF WINDSOR

Step 7: Etch Polysilicon

RESEARCH CENTRE FOR INTEGRATED MICROSYSTEMS UNIVERSITY OF WINDSOR

Step 8: Sacrificial Etch of PSG

RESEARCH CENTRE FOR INTEGRATED MICROSYSTEMS UNIVERSITY OF WINDSOR

Completed Process Table

Device Fabrication with CoventorWare (Designer Module)

RESEARCH CENTRE FOR INTEGRATED MICROSYSTEMS UNIVERSITY OF WINDSOR

CoventorWare Designer Module

RESEARCH CENTRE FOR INTEGRATED MICROSYSTEMS UNIVERSITY OF WINDSOR

Layout Editor Preprocessor (Meshing)

RESEARCH CENTRE FOR INTEGRATED MICROSYSTEMS UNIVERSITY OF WINDSOR

Layout Editor Main Screen

RESEARCH CENTRE FOR INTEGRATED MICROSYSTEMS UNIVERSITY OF WINDSOR

RESEARCH CENTRE FOR INTEGRATED MICROSYSTEMS UNIVERSITY OF WINDSOR

Completed Comb-Drive Layout

RESEARCH CENTRE FOR INTEGRATED MICROSYSTEMS UNIVERSITY OF WINDSOR

RESEARCH CENTRE FOR INTEGRATED MICROSYSTEMS UNIVERSITY OF WINDSOR

Preprocessor Module Main Screen

Expanded Solid Model Directory

Sacrificial PSG layer is automatically hidden

RESEARCH CENTRE FOR INTEGRATED MICROSYSTEMS UNIVERSITY OF WINDSOR

RESEARCH CENTRE FOR INTEGRATED MICROSYSTEMS UNIVERSITY OF WINDSOR

RESEARCH CENTRE FOR INTEGRATED MICROSYSTEMS UNIVERSITY OF WINDSOR

RESEARCH CENTRE FOR INTEGRATED MICROSYSTEMS UNIVERSITY OF WINDSOR

Mesher Settings (Cont.)

RESEARCH CENTRE FOR INTEGRATED MICROSYSTEMS UNIVERSITY OF WINDSOR

Completed Meshed Structure

Finite Element Simulations (Analyzer)

RESEARCH CENTRE FOR INTEGRATED MICROSYSTEMS UNIVERSITY OF WINDSOR

RESEARCH CENTRE FOR INTEGRATED MICROSYSTEMS UNIVERSITY OF WINDSOR

Solver Setup & Result Selection

RESEARCH CENTRE FOR INTEGRATED MICROSYSTEMS UNIVERSITY OF WINDSOR

MemElectro Solver Setup

RESEARCH CENTRE FOR INTEGRATED MICROSYSTEMS UNIVERSITY OF WINDSOR

Electrostatic Analysis Capacitance

RESEARCH CENTRE FOR INTEGRATED MICROSYSTEMS UNIVERSITY OF WINDSOR

Electrostatic Analysis Charge Density