BU505

HIGH VOLTAGE NPN MULTIEPITAXIAL FAST-SWITCHING TRANSISTOR

s s s

HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED HIGH RUGGEDNESS

APPLICATIONS ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s SWITCH MODE POWER SUPPLIES
s

DESCRIPTION The BU505 is a high voltage NPN fastswitching transistor designed to be used in lighting application, like electronic ballast for fluorescent lamps. Its characteristics make it also ideal for power supplies.

TO-220

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol V CES V CEO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c 25 o C Storage Temperature Max. Operating Junction Temperature Value 1500 700 2.5 4 1 2 75 -65 to 150 150 Unit V V A A A A W
o o

C C

September 2001

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THERMAL DATA
R thj-case Thermal Resistance Junction-case Max 1.67
o

C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Symbol I CES I EBO Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 1500 V V CE = 1500 V V EB = 5 V I C = 100 mA L = 25mH 700 T case = 125 o C Min. Typ. Max. 0.15 1 1 Unit mA mA mA V

V CEO(sus) Collector-emitter Sustaining Voltage (I B = 0) V CE(sat) V BE(sat) I s/b Collector-emitter Saturation Voltage Base-emitter Saturation Voltage Second Breakdown Current INDUCTIVE LOAD Storage Time Fall Time

IC = 2 A IC = 2 A V CE = 120 V V Clamp = 250 V I B1 = 0.7 A R bb = 0

I B = 0.9 A I B = 0.9 A t = 200 s IC = 2 A V be(off) = -5V L = 200H 2

5 1.3

V V A

ts tf

2 350

s ns

Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.

Safe Operating Area

Derating Curve

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DC Current Gain Collector Emitter Saturation Voltage

Base Emitter Saturation Voltage

Inductive Fall Time

Inductive Storage Time

Reverse Biased SOA

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Inductive Load Switching Test Circuits

1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier

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TO-220 MECHANICAL DATA

DIM. A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M DIA. 3.75 13.00 2.65 15.25 6.20 3.50 2.60 3.85 0.147 mm MIN. 4.40 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 10.00 16.40 14.00 2.95 15.75 6.60 3.93 0.511 0.104 0.600 0.244 0.137 0.102 0.151 TYP. MAX. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 MIN. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.394 0.645 0.551 0.116 0.620 0.260 0.154 inch TYP. MAX. 0.181 0.052 0.107 0.027 0.034 0.067 0.067 0.202 0.106 0.409

P011CI
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2001 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com

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