Lecture 5

CMOS Devices and Models

ECE534 sp09 hrg

Intro and Background

Read Section 2.3 of Allen and Holberg (review Sedra and Smith, Chapt 4). General Approach to designing with CMOS devices. ECE331/332 uses long-channel model with two 2nd order effects (output conductance and substrate bias). Another 2nd order effect is an artifact of the current-voltage derivation. The variation of the potential along the channel is not linear. For gate bias < Vt , subthreshold behavior needs to be defined. Designs need to account for 3rd order effects due to high fields. The threshold, Vt varies considerably due to processing statistics. Temperature and noise are additional effects and present in mixed-signal (digital, RF on the same chip). The reduction in the power supply has the most effect on analog design. Decreases have narrowed the design space and prompted for many new design techniques. The effects are not mitigated by using longer channel lengths. Staying with older technologies is increasingly not viable to meet cost requirements.
hrg 2/1/2009
ECE534 sp09 hrg

Historical trend of supply and margins reduction

From Vertregt, NXP, IEDM 2006

ECE534 sp09 hrg

Long Channel + 2nd Order Effects

Substrate Bias Effect

Vt = Vto + ( | 2F + VSB | | 2F )

Channel Modulation

Note: Vt = VTH

The subthreshold slope is given by :

Subthreshold

S = 2.3VT (1 + Cd / Cox )

hrg 2/1/2009
ECE534 sp09 hrg

Vertical Field (Gate-to-Channel)

eff = o /(1 + (VGS Vt ))

High Field Effects

Horizontal Field (Drain-toSource): Velocity Saturation

Horizontal Field (Drain-to-Source): Vt lowering with increasing field

Combined Effects on Output Conductance

hrg 2/1/2009
ECE534 sp09 hrg

Modified I-V Relationship

The reduction of mobilty due to vertical field and the velocity saturation of carriers is accounted for in the equation. The effects relate to defining saturation and the drive capability of the device.

Note: Vt = VTH

hrg 2/1/2009
ECE534 sp09 hrg

Analog Device Formulas

from Gray and Meyer, 4th edition, Wiley

hrg 2/1/2009
ECE534 sp09 hrg

Analog Device Formulas

from Gray and Meyer, 4th edition, Wiley

hrg 2/1/2009
ECE534 sp09 hrg

Models
SPICE is the most widely used model for devices. SPICE exists in many levels and various simulation programs can run some or all of the levels. What physical effects the model can account for is a combination of the level used and the extent of the characterization to determine model parameters. In total, the model becomes an algorithm which can calculate voltages and currents at each node in the circuit as a function of time and applied signals. Level 1: This the most basic model. It replicates the gradual channel approximation and takes into account simple channel length modulation and substrate bias effects with a single, constant parameters. The most glaring issue compared to actual, long channel devices is that Vdsat is much less than VGS Vt and sub threshold (VGS < Vt) is not modeled. Capacitance and resistance internal to the device is represented. Level 2 and Level 3: These models take into account the non-linear potential along the channel and some of the vertical and horizontal fields affecting mobility and pinchoff. The sub threshold mode of operation is also covered. Temperature effects on some parameters is also included. The models fall short for a good representation of output conductance (ro). BSIM Models: These are the models used by industry today. The BSIM series employs many parameters (180 for BSIM3) to gain an relatively accurate portrayal of devices. BSIM4 is the model used for 90nm processes, which are at the forefront of analog design. BSIM models continue to have difficulties in accurate representation of the sub threshold region due to high fields and the multiple sources of leakage current. An accurate portray of output conductance which is continuous through the three regions of operation is still a goal.

hrg 2/1/2009
ECE534 sp09 hrg

Level 1 Model
The Level 1 model replicates the long channel derivation of the MOSFET device. Note the quadratic relationship between VGS and ID . The subthreshold region is not modeled as depicted by the log (ID) versus VGS.

hrg 2/1/2009
ECE534 sp09 hrg

10

BSIM3 Model
The behavior shows a number of deviations from the long channel model. The channel saturates before VGS Vt The relationship between ID and VGS is linear. Subtrhreshold region is modeled.

hrg 2/1/2009
ECE534 sp09 hrg

11